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"During my service in the United States Congress, I took the initiative in creating the Internet."
Al Gore ; The basis for the later misquote by US Republicans that Gore had "invented" the Internet. Gore was the leading political champion of the modern-day Internet.
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| Number | Title | Issue Date |
| 5723988 | CMOS with parasitic bipolar transistor A device is disclosed which combines the advantages of CMOS and bipolar using an existing parasitic bipolar device. As such high on-chip density is attainable with the device along with high speed capability while maintaining low power advantages.... | 03/03/1998 |
| 5508637 | Logic module for a field programmable gate array An 8-input, 1-output mux-based logic module for an FPGA is disclosed. The logic module comprises five separate multiplexers connected differently in the various embodiments of the present invention. The 8-input logic module can realize a total of 2390 uni... | 04/16/1996 |
| 5502402 | FPGA architecture based on a single configurable logic module A logic module uses a multiplexer which can be used to configure the logic module as combinational or sequential. A sequential block comprises a flip-flop with preset and clear, and can be SR or D-type. The multiplexer is used in the feedback loop of the ... | 03/26/1996 |
| 5458732 | Method and system for identifying process conditions A plasma processing system 10 for fabricating a semiconductor wafer 24 is disclosed. The system includes a plasma processing tool 12 and an RF energy source 20 coupled to the plasma processing tool 12. An optional matching network 22 may be included betwe... | 10/17/1995 |
| 5451909 | Feedback amplifier for regulated cascode gain enhancement A regulated cascode circuit with enhanced gain includes a cascode section including a common source MOS transistor (m1) of a first polarity and a cascode device (m2) wherein the drain of the common-source MOS transistor (m1 | 09/19/1995 |
| 5441902 | Method for making channel stop structure for CMOS devices In a semiconductor device having two N type regions separated by a P type region, a channel stop is needed to prevent shorting between the two N type regions. The channel stop of the invention has oxide isolators over the two N type regions and a P+ type ... | 08/15/1995 |
| 5435379 | Method and apparatus for low-temperature semiconductor processing A chilling system (12) has a container (20) filled with a coolant (22). A pipe (16) traverses within the container (20) and the coolant (22) to a housing (18). Fluid flows within the pipe (16) and becomes chilled through the pipe (16) upon entering the co... | 07/25/1995 |
| 5429955 | Method for constructing semiconductor-on-insulator A method for constructing a semiconductor-on-insulator is provided. A sacrificial layer (12) of a predetermined thickness is first formed on a semiconductor wafer (10) surface. The wafer (10) is then subjected to an ion implantation process to place the i... | 07/04/1995 |
| 5422723 | Diffraction gratings for submicron linewidth measurement A test structure and a method of using it for measuring submicron linewidths. Diffraction gratings are made with lines having an unknown linewidth. The grating has a pitch comprises of multiple lines and multiple spaces. This permits a wider "effective pi... | 06/06/1995 |
| 5414310 | Analog voltage maximizer and minimizer circuits Voltage minimizer and maximizer circuits are provided for both single-ended and fully-differential analog input voltages. A single-ended analog voltage maximizer circuit includes a plurality of operational amplifiers (OP1, OP2 . . . ... | 05/09/1995 |
| 5404327 | Memory device with end of cycle precharge utilizing write signal and data transition detectors A memory device (10) having a precharge and timing control circuit (24) is configured so that a precharge state occurs at the end of memory cycles. A precharge signal remains active until a change of address is detected by an address transition detector (... | 04/04/1995 |
| 5397962 | Source and method for generating high-density plasma with inductive power coupling A source and method for generating high density plasma with inductive radio-frequency power coupling is provided in which coil antenna sections (34) within a plasma source (12) are used to generate a high-density uniform plasma. This plasma is then guided... | 03/14/1995 |
| 5397909 | High-performance insulated-gate field-effect transistor An improved device fabrication method and transistor structure 36 provide shallow, heavily doped, source/drain junction regions 64 and a uniformly doped lower gate region 50 having a high concentration of dopants efficiently distributed near the gate elec... | 03/14/1995 |
| 5338969 | Unerasable programmable read-only memory An unerasable memory cell (10) is formed in the face of a layer (22) of semiconductor of a first conductivity type and includes an erasable read-only memory cell (12) having a first source/drain region (16) and a second source/drain region (18) of a secon... | 08/16/1994 |
| 5294801 | Extended source e-beam mask imaging system including a light source and a photoemissive source An electron beam imaging system (10) includes a photoemitter plate (12). An optical image beam (15) is directed through a pattern mask (18), which is imaged onto the photoemitter (12). The photoemitter (12) emits electrons from those unmasked regions illu... | 03/15/1994 |
| 5287304 | Memory cell circuit and array An improved memory cell (118) is provided which may be incorporated into an array (202) of memory cells. Array (202) includes a first gate conductor region (224) and a second gate conductor region (238), wherein the first and second gate conductor regions... | 02/15/1994 |
| 5274588 | Split-gate cell for an EEPROM A non-volatile memory cell includes heavily doped source 12 and drain 14 regions separated by a channel region 16. The source 12 and drain 14 are isolated from floating gate 18 and control gate 22 by thick oxide 36. A floating gate 18 is formed over and i... | 12/28/1993 |
