Bizarre Patents
Crispy Chip Sandwich and Process of Producing a Sandwich Product
A food product comprising a multilayer cookie or snack having outer layers formed from a crispy type edible food product such as a potato chip or corn chip, etc. with an intermediate marshmallow layer being in contact with the inner surface of each crispy chip and one or more filler substances.
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| Number | Title | Issue Date |
| 6689646 | Plasma method for fabricating oxide thin films A method is provided for fabricating a thin film oxide. The method include forming a first silicon layer, applying a second silicon layer overlying the first silicon layer, oxidizing the second silicon layer at a temperature of less than 400° C. using an... | 02/10/2004 |
| 6184157 | Stress-loaded film and method for same A method has been provided to counteract the inherent tension in a deposited film. A wafer substrate is fixed to a wafer chuck having a curved surface. When the chuck surface is convex, a tensile stress is implanted in a deposited film. Upon release from ... | 02/06/2001 |
| 6169013 | Method of optimizing crystal grain size in polycrystalline silicon films A method is provided for optimizing the crystal drain size in polycrystalline silicon films deposited on transparent substrates suitable for the manufacture of liquid crystal displays. A film of microcrystalline silicon is deposited on a transparent subst... | 01/02/2001 |
| 6169011 | Trench isolation structure and method for same A method of forming an improved trench isolation structure between transistors on an IC is disclosed. The isolation trench is formed without significantly degrading, or thinning the previously deposited gate oxide layer. The gate oxide layer is deposited ... | 01/02/2001 |
| 6117691 | Method of making a single transistor ferroelectric memory cell with asymmetrical ferroelectric polarization A method of forming a semiconductor structure having a ferroelectric memory (FEM) gate unit on a silicon substrate includes implanting doping impurities of a first type into the substrate to form a conductive channel of a first type, implanting doping imp... | 09/12/2000 |
| 6111619 | Method of forming polycrystalline silicon TFTs with TiN/Cu/TiN interconnections for a liquid crystal display pixel array The invention provides a TFT LCD structure and method for using copper conductors on polycrystalline silicon TFTs. A top gate TFT architecture is employed with the copper sandwiched between layers of TiN. Conventional photolithographic and wet etch patter... | 08/29/2000 |
| 6085104 | Pilot aided, time-varying finite impulse response, adaptive channel matching receiving system and method A wideband receiver, including a time-varying finite impulse response (FIR) filter, has been provided to combine multipath communications of data in response to pilot channel timing information. The time-varying FIR processes the multipath communications ... | 07/04/2000 |
| 6080612 | Method of forming an ultra-thin SOI electrostatic discharge protection device A method of forming, on an ultra-thin SOI substrate, an ESD protected device, includes: preparing a single crystal silicon substrate, including forming insulated areas thereon and forming selectively conductive areas thereon; doping the selectively conduc... | 06/27/2000 |
| 6071782 | Partial silicidation method to form shallow source/drain junctions A process of forming silicide at uniform rates across the entire source/drain region is provided. A two-step annealing method permits the thickness of the silicide formed on the edge of a silicon electrode to be substantially the same as it is in the cent... | 06/06/2000 |
| 6066547 | Thin-film transistor polycrystalline film formation by nickel induced, rapid thermal annealing method A method for annealing amorphous silicon film to produce polycrystalline film suitable for thin-film transistors fabricated on glass substrates is provided. The method involves using nickel to help induce the crystallization. The method also uses a high t... | 05/23/2000 |
| 6060755 | Aluminum-doped zirconium dielectric film transistor structure and deposition method for same A high-k dielectric film is provided which remains amorphous at relatively high annealing temperatures. The high-k dielectric film is a metal oxide of either Zr or Hf, doped with a trivalent metal, such as Al. Because the film resists the formation of a c... | 05/09/2000 |
| 6048738 | Method of making ferroelectric memory cell for VLSI RAM array A method of forming a semiconductor memory device on a silicon substrate includes implanting doping impurities of a first type in the silicon substrate to form a conductive channel of a first type for use as a gate junction region, forming a MOS capacitor... | 04/11/2000 |
| 6044282 | Dual clock power conservation system and method for timing synchronous communications A system is provided to time the periods of known inactivity in a synchronous communications system in such a manner as to allow the high speed oscillator, used in the various timing, modulation, and demodulation operations of a portable communications un... | 03/28/2000 |
