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| Number | Title | Issue Date |
| 7422653 | Single-sided inflatable vertical slit valve A vacuum chamber having a gate valve including a chamber housing defining an internal vacuum region and first and second openings through the chamber housing and a gate valve secured to the chamber housing. The gate valve includes a sealing door located in the proce... | 09/09/2008 |
| 7232761 | Method of chemical mechanical polishing with high throughput and low dishing Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material ... | 06/19/2007 |
| 7229911 | Adhesion improvement for low k dielectrics to conductive materials Methods are provided for processing a substrate for depositing an adhesion layer between a conductive material and a dielectric layer. In one aspect, the invention provides a method for processing a substrate including positioning a substrate having a conductive mat... | 06/12/2007 |
| 7226876 | Method of modifying interlayer adhesion Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on t... | 06/05/2007 |
| 7223526 | Method of depositing an amorphous carbon layer A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit f... | 05/29/2007 |
| 7210991 | Detachable retaining ring The present invention relates to an apparatus and method for polishing semiconductor substrates with improved throughput. Embodiments of the present invention eliminate load cups from a polishing system, hence improve throughput by reducing system footprint and subs... | 05/01/2007 |
| 7210988 | Method and apparatus for reduced wear polishing pad conditioning Embodiments of a conditioning head for in-situ conditioning and/or cleaning a processing pad of a CMP, ECMP, or other processing system are provided. In one embodiment, the conditioning head includes a brush disposed in a central cavity. A cleaning fluid is provided... | 05/01/2007 |
| 7210981 | Smart conditioner rinse station A method and apparatus for monitoring polishing pad conditioning mechanisms is provided. In one embodiment, a semiconductor substrate polishing system includes a rinse station, a polishing surface, a conditioning element, and a conditioning mechanism. The conditioni... | 05/01/2007 |
| 7207878 | Conductive polishing article for electrochemical mechanical polishing Embodiments of a polishing article for processing a substrate are provided. In one embodiment, a polishing article for processing a substrate comprises a fabric layer having a conductive layer disposed thereover. The conductive layer has an exposed surface adapted t... | 04/24/2007 |
| 7205224 | Very low dielectric constant plasma-enhanced CVD films The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liab... | 04/17/2007 |
| 7199056 | Low cost and low dishing slurry for polysilicon CMP Methods and compositions are provided for planarizing substrate surfaces with low dishing. Aspects of the invention provide methods of using compositions comprising an abrasive selected from the group consisting of alumina and ceria and a surfactant for chemical mec... | 04/03/2007 |
| 7189658 | Strengthening the interface between dielectric layers and barrier layers with an oxide layer of varying composition profile A method of processing a substrate including depositing a transition layer and a dielectric layer on a substrate in a processing chamber are provided. The transition layer is deposited from a processing gas including an organosilicon compound and an oxidizing gas. T... | 03/13/2007 |
| 7183201 | Selective etching of organosilicate films over silicon oxide stop etch layers A method of selectively etching organosilicate layers in integrated circuit fabrication processes is disclosed. The organosilicate layers are selectively etched using a hydrogen-containing fluorocarbon gas. The hydrogen-containing fluorocarbon gas may be used to sel... | 02/27/2007 |
| 7182680 | Apparatus for conditioning processing pads Embodiments of a flexible pad conditioner for conditioning a processing pad are provided. The pad conditioner includes an arc-shaped member having an abrasive bottom surface configured for conditioning the processing pad. Means are provided to apply a downward force... | 02/27/2007 |
| 7179159 | Materials for chemical mechanical polishing A polishing article and method for manufacturing a polishing article for use in a chemical mechanical polishing process is disclosed. The polishing article has a plurality of polishing material tiles separated by grooves formed in or through a polishing material and... | 02/20/2007 |
| 7175505 | Method for adjusting substrate processing times in a substrate polishing system Aspects of the present invention include a method and an apparatus that may be utilized to adjust processing times in a substrate processing system. In one embodiment of the present invention, a pre-processing thickness measurement of a substrate while the substrate... | 02/13/2007 |
| 7166016 | Six headed carousel The present invention relates to an apparatus and method for polishing semiconductor substrates with improved throughput and reduced foot print. One embodiment of the present invention provides an apparatus for polishing a substrate. The apparatus comprises a base, ... | 01/23/2007 |
| 7160821 | Method of depositing low k films A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate le... | 01/09/2007 |
| 7160432 | Method and composition for polishing a substrate Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a method is provided for processing a substrate to remove conductive material disposed over narrow feature definitions formed in a substrate at... | 01/09/2007 |
| 7157384 | Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD) Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon ca... | 01/02/2007 |
| 7153787 | CVD plasma assisted lower dielectric constant SICOH film A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilic... | 12/26/2006 |
| 7151053 | Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing ... | 12/19/2006 |
| 7148156 | Removable amorphous carbon CMP stop A method is provided for processing a substrate including removing amorphous carbon material disposed on a low k dielectric material with minimal or reduced defect formation and minimal dielectric constant change of the low k dielectric material. In one aspect, the ... | 12/12/2006 |
| 7144606 | Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers The present invention generally provides improved adhesion and oxidation resistance of carbon-containing layers without the need for an additional deposited layer. In one aspect, the invention treats an exposed surface of carbon-containing material, such as silicon ... | 12/05/2006 |
| 7137879 | Conductive polishing article for electrochemical mechanical polishing An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adap... | 11/21/2006 |
| 7137868 | Pad assembly for electrochemical mechanical processing Embodiments of a pad assembly for processing a substrate are provided. The pad assembly includes a processing layer having a working surface adapted to process a substrate, a lower layer coupled to and disposed below the processing layer, and an electrode having an ... | 11/21/2006 |
| 7128825 | Method and composition for polishing a substrate Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition includes an acid based electrolyte system, one or more chelating agents, one or more corrosion inhibitors, one or more inorganic ... | 10/31/2006 |
| 7125813 | Method of depositing low K barrier layers A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as ... | 10/24/2006 |
| 7125477 | Contacts for electrochemical processing Systems and methods for electrochemically processing. A contact element defines a substrate contact surface positionable in contact a substrate during processing. In one embodiment, the contact element comprises a wire element. In another embodiment the contact elem... | 10/24/2006 |
| 7117064 | Method of depositing dielectric films A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field... | 10/03/2006 |
| 7115534 | Dielectric materials to prevent photoresist poisoning Methods are provided for depositing a dielectric material for use as an anti-reflective coating and sacrificial dielectric material in damascene formation. In one aspect, a process is provided for processing a substrate including depositing an acidic dielectric laye... | 10/03/2006 |
| 7115516 | Method of depositing a material layer A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species. The one or more process gases react to deposit a material layer on the ... | 10/03/2006 |
| 7115508 | Oxide-like seasoning for dielectric low k films A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more ox... | 10/03/2006 |
| 7112541 | In-situ oxide capping after CVD low k deposition A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is depos... | 09/26/2006 |
| 7112270 | Algorithm for real-time process control of electro-polishing Method and apparatus for process control of electro-processes. The method includes electro-processing a wafer by the application of two or more biases and determining an amount of charge removed as a result of each bias, separately. In one embodiment, an endpoint is... | 09/26/2006 |
| 7107125 | Method and apparatus for monitoring the position of a semiconductor processing robot A robotic positioning system that cooperates with a sensing system to correct robot motion is provided. The sensing system is decoupled from the sensors used conventionally to control the robot's motion, thereby providing repeatable detection of the robot's true pos... | 09/12/2006 |
| 7104869 | Barrier removal at low polish pressure The invention generally provides methods and compositions for planarizing a substrate surface having underlying dielectric materials. Aspects of the invention provide compositions and methods using a combination of low polishing pressures, polishing compositions, va... | 09/12/2006 |
| 7094710 | Very low dielectric constant plasma-enhanced CVD films The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liab... | 08/22/2006 |
| 7094442 | Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon A method is provided for forming an amorphous carbon layer, deposited on a dielectric material such as oxide, nitride, silicon carbide, carbon doped oxide, etc., or a metal layer such as tungsten, aluminum or poly-silicon. The method includes the use of chamber seas... | 08/22/2006 |
| 7091137 | Bi-layer approach for a hermetic low dielectric constant layer for barrier applications Methods and apparatus are provided for processing a substrate with a bilayer barrier layer. In one aspect, the invention provides a method for processing a substrate including depositing a nitrogen containing barrier layer on a substrate surface and then depositing ... | 08/15/2006 |
