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| Number | Title | Issue Date |
| 7951730 | Decreasing the etch rate of silicon nitride by carbon addition Methods for forming silicon nitride hard masks are provided. The silicon nitride hard masks include carbon-doped silicon nitride layers and undoped silicon nitride layers. Carbon-doped silicon nitride layers that are deposited from a mixture comprising a carbon sour... | 05/31/2011 |
| 7947611 | Method of improving initiation layer for low-k dielectric film by digital liquid flow meter A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection... | 05/24/2011 |
| 7947131 | Copper deposition chamber having integrated bevel clean with edge bevel removal detection Embodiments of the invention generally provide apparatus and method for detecting and controlling edge bevel removal of a semiconductor substrate. One embodiment of the present invention provides an apparatus for inspecting a rotating substrate. The apparatus compri... | 05/24/2011 |
| 7837851 | In-situ profile measurement in an electroplating process A method and apparatus for measuring differential voltages in an electrolyte of an electrochemical plating cell. Current densities are calculated from the measured differential voltages and correlated to thickness values of plated materials. A real time thickness pr... | 11/23/2010 |
| 7752542 | Dynamic external entity resolution in an XML-based content management system Embodiments of the invention provide a method, system, and article of manufacture for dynamically resolving external entity references in a document managed by a content management system (CMS). In one embodiment, a wrapper transform may be applied to a source trans... | 07/06/2010 |
| 7752215 | System and method for protecting sensitive data A method, system and article of manufacture for protecting sensitive data in databases and, more particularly, for managing access to sensitive data in a database. One embodiment comprises receiving a query against the data in the database comprising at least (i) a ... | 07/06/2010 |
| 7752197 | SQL query construction using durable query components The present invention generally is directed to a system, method and article of manufacture for generating a reusable query component. The reusable query component may include one or more query conditions and may be used to facilitate building a database query includ... | 07/06/2010 |
| 7749917 | Dry cleaning of silicon surface for solar cell applications A method and apparatus for cleaning layers of solar cell substrates is disclosed. The substrate is exposed to a reactive gas that may comprise neutral radicals comprising nitrogen and fluorine, or that may comprise anhydrous HF and water, alcohol, or a mixture of wa... | 07/06/2010 |
| 7749815 | Methods for depositing tungsten after surface treatment In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate containing a metal nitride barrier layer within a process chamber and exposing the substrate to a reagent gas containing diborane... | 07/06/2010 |
| 7749574 | Low temperature ALD SiO The present invention generally comprises a silicon dioxide atomic layer deposition method. By providing pyridine as a catalyst, water may be utilized as the oxidization source while depositing at a low temperature. Prior to exposing the substrate to the water, the ... | 07/06/2010 |
| 7748542 | Batch deposition tool and compressed boat Aspects of the invention include methods and apparatus for processing a batch of substrates. In one embodiment, a compressed substrate boat is configured to reduce pumping volume in a batch processing chamber. The compressed substrate boat comprises a stationary sub... | 07/06/2010 |
| 7748400 | Chemical delivery apparatus for CVD or ALD Embodiments are related to ampoule assemblies containing bypass lines and valves. In one embodiment, ampoule assembly is provided which includes inlet and outlet lines coupled with and in fluid communication to an ampoule body, a bypass line connected between the in... | 07/06/2010 |
| 7745333 | Methods for depositing tungsten layers employing atomic layer deposition techniques In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process fo... | 06/29/2010 |
| 7745329 | Tungsten nitride atomic layer deposition processes In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen ... | 06/29/2010 |
| 7745309 | Methods for surface activation by plasma immersion ion implantation process utilized in silicon-on-insulator structure Methods for promoting interface bonding energy utilized in SOI technology are provided. In one embodiment, the method for promoting interface bonding energy includes providing a first substrate and a second substrate, wherein the first substrate has a silicon oxide ... | 06/29/2010 |
| 7737028 | Selective ruthenium deposition on copper materials Embodiments of the invention provide processes for selectively forming a ruthenium-containing film on a copper surface over exposed dielectric surfaces. Thereafter, a copper bulk layer may be deposited on the ruthenium-containing film. In one embodiment, a method fo... | 06/15/2010 |
| 7737007 | Methods to fabricate MOSFET devices using a selective deposition process In one embodiment, a method for forming a silicon-based material on a substrate having dielectric materials and source/drain regions thereon within a process chamber is provided which includes exposing the substrate to a first process gas comprising silane, methylsi... | 06/15/2010 |
| 7736928 | Precision printing electroplating through plating mask on a solar cell substrate Embodiments of the invention contemplate the formation of a low cost solar cell using a novel electroplating apparatus and method to form a metal contact structure having metal lines formed using an electrochemical plating process. The apparatus and methods describe... | 06/15/2010 |
| 7732327 | Vapor deposition of tungsten materials Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes to provide tungsten films having significantly improved surface uniformity while increasing the ... | 06/08/2010 |
| 7732325 | Plasma-enhanced cyclic layer deposition process for barrier layers In one embodiment, a method for depositing materials on a substrate is provided which includes forming a titanium nitride barrier layer on the substrate by sequentially exposing the substrate to a titanium precursor containing a titanium organic compound and a nitro... | 06/08/2010 |
| 7732309 | Plasma immersed ion implantation process Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing... | 06/08/2010 |
| 7732269 | Method of ultra-shallow junction formation using Si film alloyed with carbon A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the sub... | 06/08/2010 |
| 7727364 | Auxiliary electrode encased in cation exchange membrane tube for electroplating cell A method and apparatus for plating a metal onto a substrate. One embodiment of the invention provides an apparatus for electrochemically plating a substrate. The apparatus comprises a fluid basin configured to retain a plating solution therein, an anode assembly dis... | 06/01/2010 |
| 7718081 | Techniques for the use of amorphous carbon (APF) for various etch and litho integration schemes A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the... | 05/18/2010 |
| 7709382 | Electroprocessing profile control Embodiments of the present invention provide methods of electroprocessing a substrate. One embodiment of the present invention provides a method comprises pressing a substrate against a polishing pad with a force less than about two pounds per square inch, the subst... | 05/04/2010 |
| 7704816 | Boron derived materials deposition method Methods of forming boron-containing films are provided. The methods include introducing a boron-containing precursor into a chamber and depositing a network comprising boron-boron bonds on a substrate by thermal decomposition or a plasma process. The network may be ... | 04/27/2010 |
| 7700486 | Oxide-like seasoning for dielectric low k films A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more ox... | 04/20/2010 |
| 7699972 | Method and apparatus for evaluating polishing pad conditioning A method and apparatus for evaluating a conditioned electrochemical mechanical polishing pad are provided. A polishing pad is conditioned using a first set of process conditions. A sheet wafer and a residue wafer are polished on the polishing pad. The removal rates ... | 04/20/2010 |
| 7699935 | Method and system for supplying a cleaning gas into a process chamber A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate suppor... | 04/20/2010 |
| 7694647 | Cluster tool architecture for processing a substrate Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more... | 04/13/2010 |
| 7678245 | Method and apparatus for electrochemical mechanical processing Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical planarizing system. In one embodiment, a cell for polishing a substrate includes a processing pad disposed on a top surface of a platen ... | 03/16/2010 |
| 7674662 | Process for making thin film field effect transistors using zinc oxide The present invention comprises a method of forming a zinc oxide based thin film transistor by blanket depositing the zinc oxide layer and the source-drain metal layer and then wet etching through the zinc oxide while etching through the source-drain electrode layer... | 03/09/2010 |
| 7674338 | Heated substrate support and method of fabricating same A method and apparatus for forming a substrate support is provided herein. In one embodiment, the substrate support includes a body having a support surface and at least one groove. A heater element surrounded with a malleable heat sink is disposed in the groove. Th... | 03/09/2010 |
| 7670945 | In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application The present invention provides a SiC material, formed according to certain process regimes, useful as a barrier layer, etch stop, and/or an ARC, in multiple levels, including the pre-metal dielectric (PMD) level, in IC applications and provides a dielectric layer de... | 03/02/2010 |
| 7670924 | Air gap integration scheme Methods are provided for forming a structure that includes an air gap. In one embodiment, a method is provided for forming a damascene structure comprises depositing a porous low dielectric constant layer by a method including reacting an organosilicon compound and ... | 03/02/2010 |
| 7670468 | Contact assembly and method for electrochemical mechanical processing Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical planarizing system. In one embodiment, a contact assembly for electrochemically processing a substrate includes a housing having a ball ... | 03/02/2010 |
| 7670465 | Anolyte for copper plating Embodiments of the invention provide a method for plating copper into features formed on a semiconductor substrate. The method includes positioning the substrate in a plating cell, wherein the plating cell includes a catholyte volume containing a catholyte solution,... | 03/02/2010 |
| 7666061 | Method for conditioning processing pads Embodiments of a flexible pad conditioner for conditioning a processing pad are provided. The pad conditioner includes an arc-shaped member having an abrasive bottom surface configured for conditioning the processing pad. Means are provided to apply a downward force... | 02/23/2010 |
| 7665951 | Multiple slot load lock chamber and method of operation Embodiments of the invention include a load lock chamber, a processing system having a load lock chamber and a method for transferring substrates between atmospheric and vacuum environments. In one embodiment, the method includes maintaining a processed substrate wi... | 02/23/2010 |
| 7663121 | High efficiency UV curing system An ultraviolet (UV) cure chamber enables curing a dielectric material disposed on a substrate and in situ cleaning thereof. A tandem process chamber provides two separate and adjacent process regions defined by a body covered with a lid having windows aligned respec... | 02/16/2010 |
