Celebrity Inventors
Actor Zeppo Marx patented a "Cardiac Pulse Rate Monitor" in 1969.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8148758 | High voltage semiconductor device with JFET regions containing dielectrically isolated junctions and method of fabricating the same A high-voltage field-effect device contains an extended drain or “drift” region including an embedded stack of JFET regions separated by intervening layers of the drift region. Each of the JFET regions is filled with material of an opposite conductivity type to ... | 04/03/2012 |
| 8138570 | Isolated junction field-effect transistor An isolation structure for a semiconductor device comprises a floor isolation region, a dielectric filled trench above the floor isolation region and a sidewall isolation region extending downward from the bottom of the trench to the floor isolation region. This str... | 03/20/2012 |
| 8129229 | Method of manufacturing semiconductor package containing flip-chip arrangement A metal leadframe to be used in manufacturing a “flip-chip” type semiconductor package is treated to form a metal plated layer in an area to be contacted by a solder ball or bump on the chip. The leadframe is then process further to form an oxide or organometall... | 03/06/2012 |
| 8127369 | Knee-mounted air deflector for motorcyclist An air deflector is mounted to the area of the knee of a motorcyclist to prevent a stream of air from striking the motorcyclist's face. In one embodiment, the deflector is in the form of a cap visor. ... | 03/06/2012 |
| 8097522 | Modular methods of forming isolation structures for integrated circuits A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be ... | 01/17/2012 |
| 8089129 | Isolated CMOS transistors Isolated CMOS transistors formed in a P-type semiconductor substrate include an N-type submerged floor isolation region and a filled trench extending downward from the surface of the substrate to the floor isolation region. Together the floor isolation region and th... | 01/03/2012 |
| 8071462 | Isolation structures for integrated circuits and modular methods of forming the same A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be ... | 12/06/2011 |
| 8035364 | Step-down switching regulator with freewheeling diode A freewheeling DC/DC step-down converter includes a high-side MOSFET, an inductor and an output capacitor connected between the input voltage and ground. A freewheeling clamp, which includes a freewheeling MOSFET and diode, is connected across the inductor. When the... | 10/11/2011 |
| 8032004 | Multimedia presentation format A format for accessing content such as a full-length move from an optical disc uses an XML description file stored on the disc to generate one or more screens that a user employs to access the content. The decoding requirements of a hardware or software player are r... | 10/04/2011 |
| 8030731 | Isolated rectifier diode An isolated diode comprises a floor isolation region, a dielectric-filled trench and a sidewall region extending from a bottom of the trench at least to the floor isolation region. The floor isolation region, dielectric-filled trench and a sidewall region are compri... | 10/04/2011 |
| 8030152 | Method of fabricating trench-constrained isolation diffusion for semiconductor devices A semiconductor substrate includes a pair of trenches filled with a dielectric material. Dopant introduced into the mesa between the trenches is limited from diffusing laterally when the substrate is subjected to thermal processing. Therefore, semiconductor devices ... | 10/04/2011 |
| 7994827 | MOSFET gate drive with reduced power loss A gate driver for a power MOSFET in, for example, a DC-DC converter switches the MOSFET between a fully-on condition and a low-current condition instead of switching the MOSFET between fully-on and fully-off conditions. The amount of charge that must be transferred ... | 08/09/2011 |
| 7994605 | Isolation structure for semiconductor integrated circuit substrate Isolation regions for semiconductor substrates include dielectric-filled trenches and field oxide regions. Protective caps of dielectric materials dissimilar from the dielectric materials in the main portions of the trenches and field oxide regions may be used to pr... | 08/09/2011 |
| 7994578 | ESD protection for bipolar-CMOS-DMOS integrated circuit devices An Electro-Static Discharge (ESD) protection device is formed in an isolated region of a semiconductor substrate. The ESD protection device may be in the form of a MOS or bipolar transistor or a diode. The isolation structure may include a deep implanted floor layer... | 08/09/2011 |
| 7983139 | Small form factor optical data storage disc and cartridge An optical data storage disc measuring 32 mm in diameter contains 1 GB of data per layer. The data is designed to be readable by a disc drive that contains a blue wavelength laser, an objective lens having a numerical aperture of 0.72 and conventional DVD controller... | 07/19/2011 |
| 7977927 | Step-up DC/DC voltage converter with improved transient current capability A DC/DC voltage converter includes an inductive switching voltage regulator and a capacitive charge pump connected in series between the input and output terminals of the converter. The charge pump has a second input terminal connected to the input terminal of the c... | 07/12/2011 |
| 7977926 | Boost and up-down switching regulator with synchronous freewheeling MOSFET A freewheeling MOSFET is connected in parallel with the inductor in a switched DC/DC converter. When the freewheeling MOSFET is turned on during the switching operation of the converter, while the low-side and energy transfer MOSFETs are turned off, the inductor cur... | 07/12/2011 |
| 7960997 | Cascode current sensor for discrete power semiconductor devices A cascode current sensor includes a main MOSFET and a sense MOSFET. The drain terminal of the main MOSFET is connected to a power device whose current is to be monitored, and the source and gate terminals of the main MOSFET are connected to the source and gate termi... | 06/14/2011 |
| 7956437 | Isolation structures for integrated circuits A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be ... | 06/07/2011 |
| 7956391 | Isolated junction field-effect transistor Various integrated circuit devices, in particular a junction field-effect transistor (JFET), are formed inside an isolation structure which includes a floor isolation region and a trench extending from the surface of the substrate to the floor isolation region. The ... | 06/07/2011 |
| 7955947 | Method of forming isolation structure for semiconductor integrated circuit substrate Isolation regions for semiconductor substrates include dielectric-filled trenches and field oxide regions. Protective caps of dielectric materials dissimilar from the dielectric materials in the main portions of the trenches and field oxide regions may be used to pr... | 06/07/2011 |
| 7939420 | Processes for forming isolation structures for integrated circuit devices Processes for forming isolation structures for semiconductor devices include forming a submerged floor isolation region and a filed trench which together enclose an isolated pocket of the substrate. One process aligns the trench to the floor isolation region. In ano... | 05/10/2011 |
| 7923821 | Semiconductor integrated circuit substrate containing isolation structures Isolation regions for semiconductor substrates include dielectric-filled trenches and field oxide regions. Protective caps of dielectric materials dissimilar from the dielectric materials in the main portions of the trenches and field oxide regions may be used to pr... | 04/12/2011 |
| 7915137 | Method of forming isolation structure for semiconductor integrated circuit substrate Isolation regions for semiconductor substrates include dielectric-filled trenches and field oxide regions. Protective caps of dielectric materials dissimilar from the dielectric materials in the main portions of the trenches and field oxide regions may be used to pr... | 03/29/2011 |
| 7902630 | Isolated bipolar transistor An isolated bipolar transistor formed in a P-type semiconductor substrate includes an N-type submerged floor isolation region and a filled trench extending downward from the surface of the substrate to the floor isolation region. Together the floor isolation region ... | 03/08/2011 |
| 7898060 | Isolation structures for integrated circuits A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be ... | 03/01/2011 |
| 7868414 | Isolated bipolar transistor A bipolar transistor is formed in an isolation structure comprising a floor isolation region, a dielectric filled trench above the floor isolation region and a sidewall isolation region extending downward from the bottom of the trench to the floor isolation region. ... | 01/11/2011 |
| 7834421 | Isolated diode Various integrated circuit devices, in particular a diode, are formed inside an isolation structure which includes a floor isolation region and a trench extending from the surface of the substrate to the floor isolation region. The trench may be filled with a dielec... | 11/16/2010 |
| 7834416 | Trench-constrained isolation diffusion for integrated circuit die A semiconductor substrate includes a pair of trenches filled with a dielectric material. Dopant introduced into the mesa between the trenches is limited from diffusing laterally when the substrate is subjected to thermal processing. Therefore, semiconductor devices ... | 11/16/2010 |
| 7825488 | Isolation structures for integrated circuits and modular methods of forming the same A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be ... | 11/02/2010 |
| 7812647 | MOSFET gate drive with reduced power loss A gate driver for a power MOSFET in, for example, a DC-DC converter switches the MOSFET between a fully-on condition and a low-current condition instead of switching the MOSFET between fully-on and fully-off conditions. The amount of charge that must be transferred ... | 10/12/2010 |
| 7812579 | High-efficiency DC/DC voltage converter including capacitive switching pre-converter and up inductive switching post-regulator A DC/DC converter includes a pre-converter stage, which may include a charge pump, and a post-regulator stage, which may include a boost converter. The duty factor of the post-regulator stage is controlled by a feedback path that extends from the output terminal of ... | 10/12/2010 |
| 7812403 | Isolation structures for integrated circuit devices An isolated CMOS pair of transistors formed in a P-type semiconductor substrate includes an N-type submerged floor isolation region and a filled trench extending downward from the surface of the substrate to the floor isolation region. Together the floor isolation r... | 10/12/2010 |
| 7812393 | High-voltage extended drain MOSFET All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a non-isolated extended drain or drifted MOS device, a lateral trench DMOS... | 10/12/2010 |
| 7800198 | Isolation structures for integrated circuits A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be ... | 09/21/2010 |
| 7795681 | Isolated lateral MOSFET in epi-less substrate A lateral MOSFET formed in a substrate of a first conductivity type includes a gate formed atop a gate dielectric layer over a surface of the substrate, a drain region of a second conductivity type, a source region of a second conductivity type, and a body region of... | 09/14/2010 |
| 7795675 | Termination for trench MIS device A trench MIS device is formed in a P-epitaxial layer that overlies an N-epitaxial layer and an N+ substrate. In one embodiment, the device includes an N-type drain-drift region that extends from the bottom of the trench to the N-epitaxial layer. Preferably, the drai... | 09/14/2010 |
| 7786712 | High-efficiency DC/DC voltage converter including up inductive switching pre-regulator and capacitive switching post-converter A DC/DC converter includes a pre-regulator stage, which may include a boost converter, and a post-converter stage, which may include a charge pump. The duty factor of the pre-regulator stage is controlled by a feedback path that extends from the output terminal of t... | 08/31/2010 |
| 7782027 | High-efficiency DC/DC voltage converter including down inductive switching pre-regulator and capacitive switching post-converter A DC/DC converter includes a pre-regulator stage, which may include a Buck converter, and a post-converter stage, which may include a charge pump. The duty factor of the pre-regulator stage is controlled by a feedback path that extends from the output terminal of th... | 08/24/2010 |
| 7777459 | High-efficiency DC/DC voltage converter including capacitive switching pre-converter and down inductive switching post-regulator A DC/DC converter includes a pre-converter stage, which may include a charge pump, and a post-regulator stage, which may include a Buck converter. The duty factor of the post-regulator stage is controlled by a feedback path that extends from the output terminal of t... | 08/17/2010 |
