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...When G.G. Hubbard learned of his future son-in-law's invention, he called it "only a toy." His daughter was engaged to a young man named Alexander Graham Bell.
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| Number | Title | Issue Date |
| 4923564 | Selective etching process An etching process is described for etching aluminum containing III-V semiconductor compounds. The etch solution contains dichromate ion in acid aqueous solution in which the acid is either phosphoric acid or sulfuric acid. The etch solution is highly sel... | 05/08/1990 |
| 4914081 | Process for making metallized structure and article comprising structure Processes are described for electroplating metal or alloy on superconducting oxides using either a nonaqueous bath or aqueous bath with suitably applied potential. Articles made in accordance with the electroplating process are also described.... | 04/03/1990 |
| 4914177 | Polyquinoxaline polymers, and articles comprising same A polyquinoxaline polymer is prepared by self condensation of a monomer having both a 1,2-diketone and a 1,2-primary diamine in the molecule. The resultant polymers can be used as dielectric films, adhesions, varnishes and membranes.... | 04/03/1990 |
| 4911798 | Palladium alloy plating process A process is described for electroplating palladium and palladium alloys. The process involves the use of an alkyl hydroxyamine as complexing agent and is particularly good for palladium alloys such as palladium-nickel and palladium-cobalt.... | 03/27/1990 |
| 4911799 | Electrodeposition of palladium films A process for electroplating palladium containing deposits from baths comprising a combination of a surfactant and a brightener combination. The surfactant is an alkyl, ammonium-type salt containing 4 to 35 carbon atoms. The brightener is 0-benzaldehydesu... | 03/27/1990 |
| 4894583 | Display devices with yttrium orthosilicate phosphors Certain yttrium orthosillicate phosphors doped with various rare-earths are particularly suitable for use in various display devices including cathode ray tubes. Included are single crystal phosphors which exhibit high brightness and long life under high ... | 01/16/1990 |
| 4892795 | Non-aqueous cell comprising niobium triselenide A process of making a lithium cell with a positive electrode that comprises a niobium chalcogenide (e.g., NbSe3) active material. The process comprises forming the active material by a procedure that comprises forming a layer of Nb powder on an... | 01/09/1990 |
| 4870032 | Method of fabricating single crystal films of cubic group II fluorides on semiconductor componds by molecular beam epitaxy Certain semiconductor device structures are described in which single crystal layers of cubic Group II fluorides cover at least part of the surface of III-V semiconductor compound. The Fluoride crystal has a cubic structure and may be lattice matched or l... | 09/26/1989 |
| 4844608 | Solution monitoring procedure Processes are described in which solution composition is monitored by extremely accurate measurements of index of refraction involving measurement of reflectivity from a glass-solution interface. A particularly useful application is the swelling operation... | 07/04/1989 |
| 4829347 | Process for making indium gallium arsenide devices Junction field effect transistors are described with unusually short gates and a self-aligned structure which permits close approach of the source and drain electrodes to the p-n junction. Such devices have high speed, high gain and are usefully combined ... | 05/09/1989 |
| 4773750 | Deep-UV lithography A deep-UV step-and-repeat photolithography system includes a narrow-bandwidth pulsed excimer laser illumination source and an all-fused-silica lens assembly. The system is capable of line definition at the 0.5-micrometer level. One significant feature of ... | 09/27/1988 |
| 4753859 | Nonaqueous cell A nonaqueous, lithium cell is described which exhibits excellent safety characteristics when exposed to abusive testing, as well as high energy density, good charge and discharge rates, and long recycle life. Particularly unique is the composition of the ... | 06/28/1988 |
| 4745447 | Gallium arsenide on gallium indium arsenide Schottky barrier device Useful field effect transistors can be made with gallium indium arsenide as the electron conducting layer (channel layer) by incorporating a layer of gallium arsenide for the Schottky barrier. Relatively thick gallium arsenide layers are used to achieve l... | 05/17/1988 |
| 4745446 | Photodetector and amplifier integration Various integrated device structures are described which incorporate novel substrate materials and channel confinement schemes. For example, devices are described for p-type substrates and novel buffer layers. Such substrates are easier to grow and provid... | 05/17/1988 |
| 4740430 | Magneto-optic memory Certain magnetic alloys are useful for a variety of applications including for magneto-optic memory storage media (optical disks). These magnetic alloys are difficult to protect against composition alteration through such processes as corrosion, oxidation... | 04/26/1988 |
| 4740433 | Nonaqueous battery with special separator Lithium nonaqueous rechargeable batteries are described in which the separators in the cells have been exposed to a radiation grafting process to increase wettability. This increases charging and discharging rates without use of a wetting agent or additio... | 04/26/1988 |
| 4738934 | Method of making indium phosphide devices Epitaxial layers of semi-insulating InP grown by MOCVD on conducting InP wafers make excellent substrates for III-V semiconductor devices. Particularly appealing is the low defect density obtained because of the conducting InP wafers and excellent insulat... | 04/19/1988 |
| 4731293 | Fabrication of devices using phosphorus glasses A fabrication technique is described for making various devices in which a type of glass is used as a surface protection layer. The glass layers are put down by particle bombardment (generally sputtering or e-beam bombardment) of a phosphorus-containing s... | 03/15/1988 |
| 4725330 | Equilibration of lithium niobate crystals A process is described for producing optical integrated circuits on lithium niobate substrates in which the composition of the lithium niobate substrates is adjusted by a powder bed equilibration procedure. This procedure involved exposure of the lithium ... | 02/16/1988 |
| 4689115 | Gaseous etching process A process is described for preparing III-V compound semiconductor devices (e.g., gallium arsenide devices) in which gaseous bromine or chlorine is used as an etch. This etch procedure provides highly uniform etching. High selectivity for etching gallium a... | 08/25/1987 |
| 4689125 | Fabrication of cleaved semiconductor lasers A process is described for making semiconductor lasers with cleaved facets for end mirrors. The process involves electrochemically photoetching slots with deep, narrow cross-sections in a wafer and applying stress to cleave the wafer in the desired place.... | 08/25/1987 |
| 4622114 | Process of producing devices with photoelectrochemically produced gratings A photoelectrochemical etching process is described for producing gratings in various semiconductors. Because this is a direct, single step process, extreme uniformity is obtained over a wide area. The procedure is particularly useful for mode reflection ... | 11/11/1986 |
| 4617192 | Process for making optical INP devices The invention is a process for putting down coatings of aluminum oxide on optical surfaces using electron-beam deposition in an oxygen-enriched atmosphere. Particularly good results are obtained when oxygen is flowed over or directed at the surface to be ... | 10/14/1986 |
| 4613417 | Semiconductor etching process A photoelectrochemical etching process is described for n-type and semi-insulating III-V semiconductor compounds that contain aluminum or indium (AlGaAs, InGaAs) in which a non-aqueous electrolyte is used. High etch rates are achieved without harm to expo... | 09/23/1986 |
| 4610731 | Shallow impurity neutralization A process is described for fabricating semiconductor devices in which atomic hydrogen is used to neutralize shallow donors in III-V semiconductor compounds so as to make certain areas exhibit high resistance. Also described is reverse neutralization in wh... | 09/09/1986 |
| 4605605 | Lead-acid battery having positive posts of lead-tin alloy Many post seals for lead-acid batteries make use of compression seals. These seals, when used on the positive post, are often subject to abnormal anodic corrosion. The invention is a lead-acid battery in which the positive post is made of a tin-lead alloy... | 08/12/1986 |
| 4597638 | Nonlinear optical apparatus A nonlinear optical apparatus is provided with a multiple layer heterostructure made from alternate layers of a charge carrier semiconductor material having a narrow bandgap energy, and a charge barrier material having a wider bandgap energy than the char... | 07/01/1986 |
| 4589110 | Signal processor (system) for reducing bandwidth and for multiplexing a plurality of signals onto a single communications link The bandwidth required for a regularly occurring signal, such as a television signal, as received from a signal source can be substantially reduced by not transmitting each and every one of the horizontal scan lines. Rather, firstly, one or more selected ... | 05/13/1986 |
| 4576691 | Etching optical surfaces on GaAs Photoelectrochemical etching of gallium arsenide in highly alkaline aqueous solution yields optically smooth etched surfaces suitable for many optical devices. Higher optical quality is obtained for lower irradiation energy provided sufficient energy is a... | 03/18/1986 |
| 4573030 | Sealed relay structure Sealed relays often contain organic matter which reduce the conductivity of the electrical contacts. The invention is a sealed relay with a catalytic metal (Pd, Pt, Ni, Rh, Ir, Co, Fe, Os and Ru) on a rubbing surface which polymerizes the organic matter i... | 02/25/1986 |
| 4563661 | Dielectric for microwave applications Devices are described which incorporate dielectric material with unusually low (and sometimes negative) temperature coefficient of dielectric constant. Such materials make possible the fabrication of microwave devices which remain stable with changing tem... | 01/07/1986 |
| 4540476 | Procedure for making nickel electrodes A process is described for electrolytically producing nickel electrodes by subjecting a porous nickel structure (generally a nickel plaque) to alternating anodic and cathodic pulses in an aqueous halide (generally chloride) solution. The alternating pulse... | 09/10/1985 |
| 4512963 | Palladium compound synthesis procedure The invention is a process for electroplating palladium in which at least part of the palladium in the electroplating bath is added as a palladium ammine hydroxide. Both the solid form and solution form of palladium ammine hydroxide are useful in supplyin... | 04/23/1985 |
| 4502898 | Diffusion procedure for semiconductor compound A process is described for doping compound semiconductors using a metal fluoride (e.g., ZnF2) as the source of dopant. The anhydrous metal fluoride is put down on the surface of the compound semiconductor, capped with a suitable encapsulant and... | 03/05/1985 |
| 4493754 | Electrodes for palladium electroplating process A palladium electroplating process is described in which certain unique anode structures are used. These anodes have surfaces made of conducting ferrites such as nickel ferrite. Such anodes have low oxygen overvoltage, high chemical stability and minimum ... | 01/15/1985 |
| 4486274 | Palladium plating prodedure A palladium electroplating procedure is disclosed which permits rapid and efficient plating and yields ductile, adherent palladium films. The electroplating bath comprises a unique palladium complex. The procedure is also useful for electroplating a varie... | 12/04/1984 |
| 4482442 | Photoelectrochemical etching of n-type gallium arsenide A process is described for photoelectrochemically etching n-type gallium arsenide and closely related compound semiconductors such as gallium aluminum arsenide and gallium arsenide phosphide. Such a process is advantageous because the etching is confined ... | 11/13/1984 |
| 4482443 | Photoelectrochemical etching of n-type silicon Photoelectrochemical processing of semiconductors is highly desirable because of its versatility and simplicity. The invention is a photoelectrochemical etching procedure for n-type silicon in which an alcohol based solution of hydrofluoric acid is used a... | 11/13/1984 |
| 4478691 | Silver plating procedure A silver electroplating procedure is disclosed which permits rapid and efficient plating and yields ductile, adherent silver films. The electroplating bath comprises silver complexed with an aliphatic polyamine compound with 3 to 20 carbon atoms. Particul... | 10/23/1984 |
| 4470894 | Nickel electrodes for water electrolyzers Disclosed is a water electrolysis process for producing hydrogen in which a nickel anode is prepared by an electrolytic corrosion procedure. This procedure reduces the anode overpotential by about 0.2 volts at commercially used current densities which lea... | 09/11/1984 |
