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| Number | Title | Issue Date |
| 7390709 | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode A method for making a semiconductor device is described. That method comprises forming a first dielectric layer on a substrate, a trench within the first dielectric layer, and a second dielectric layer on the substrate. The second dielectric layer has a first part t... | 06/24/2008 |