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| Number | Title | Issue Date |
| 8057865 | Polysilane compositions, methods for their synthesis and films formed therefrom Polysilanes, inks containing the same, and methods for their preparation are disclosed. The polysilane generally has the formula H—[(AHR)n(c—AmHpm−2)q]—H, where each instance of A is independently Si or Ge; R is H,... | 11/15/2011 |
| 8048307 | Dynamic filtration device using centrifugal force The present invention generally relates to a filtration system having one or more apparatuses for filtering gases, liquids, or fluids (e.g., water) to remove particulate matter, and methods of making and using the apparatus. More particularly, embodiments relate to ... | 11/01/2011 |
| 7981482 | Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA a... | 07/19/2011 |
| 7973347 | Complementary metal oxide silicon image sensor and method of fabricating the same Disclosed is a method of fabricating a CMOS (Complementary Metal Oxide Silicon) image sensor. The method includes the steps of: forming a device protective layer and a metal interconnection on a substrate formed with a light receiving device; forming an inner micro-... | 07/05/2011 |
| 7960839 | Semiconductor interconnection line and method of forming the same An interconnection line of a semiconductor device and a method of forming the same using a dual damascene process are disclosed. An example interconnection line of a semiconductor device includes a semiconductor substrate, a first interconnection line formed on the ... | 06/14/2011 |
| 7943721 | Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions Methods are disclosed of making linear and cross-linked, HMW (high molecular weight) polysilanes and polygermanes, polyperhydrosilanes and polyperhydrogermanes, functional liquids containing the same, and methods of using the liquids in a range of desirable applicat... | 05/17/2011 |
| 7923326 | Memory device and method for manufacturing the same A split gate (flash) EEPROM cell and a method for manufacturing the same is disclosed, in which a control gate and a floating gate are formed in a vertical structure, to minimize a size of the cell, to obtain a high coupling ratio, and to lower a programming voltage... | 04/12/2011 |
| 7919796 | Image sensor and method of manufacturing the same Provided is an image sensor. The image sensor includes a semiconductor substrate, an interlayer dielectric, metal interconnections, a first electrode, a lower electrode, a second electrode, and a photodiode. The semiconductor substrate has at least one transistor th... | 04/05/2011 |
| 7849238 | Multiple-apparatus connection system and the method thereof The present invention is a multiple-apparatus connection system; the multiple-apparatus connection system comprises a USB port, a controller, and a voltage determining device. The USB port connects to a peripheral device. The voltage determining device connects to t... | 12/07/2010 |
| 7879696 | Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which ... | 02/01/2011 |
| 7811928 | Semiconductor devices and fabrication methods thereof Semiconductor devices and methods of fabricating semiconductor devices are disclosed. A disclosed semiconductor device includes a silicon substrate, a source region and a drain region. A gate electrode is formed on the silicon substrate. Also, a metal silicide layer... | 10/12/2010 |
| 7732246 | Method for fabricating vertical CMOS image sensor A method of fabricating a vertical CMOS image sensor is disclosed, to improve the integration with the decrease in size of pixel by minimizing the lateral diffusion, in which phosphorous and arsenic ions are implanted while controlling the dose and energy, the metho... | 06/08/2010 |
| 7723148 | Method for manufacturing image sensor Provided is a method for manufacturing an image sensor. The method includes the following. A color filter layer is formed on a semiconductor substrate having a photodiode and a transistor formed thereon. A planarization layer is formed on the color filter layer. An ... | 05/25/2010 |
| 7704818 | Semiconductor device and method for manufacturing semiconductor device A method for manufacturing a semiconductor device, including etching exposed areas of a substrate using patterned nitride and insulating layers as an etch mask to form a trench in the substrate; forming a buffer layer in the trench; forming a stress-inducing layer b... | 04/27/2010 |
| 7704814 | Method for manufacturing MOS transistor of semiconductor device Disclosed is a method for manufacturing a semiconductor device including a low-voltage MOS transistor and a high-voltage MOS transistor. The present method includes a low-voltage well implantation process on a semiconductor substrate to form a first well in a first ... | 04/27/2010 |
| 7687345 | Flash memory device and method of manufacturing the same Disclosed are a flash memory device having a silicon-oxide-nitride-oxide-silicon (SONOS) structure and a method of manufacturing the same. The flash memory device includes source and drain diffusion regions separated from each other on opposite sides of a trench in ... | 03/30/2010 |
| 7674681 | Semiconductor device and method for manufacturing the same Disclosed are a semiconductor device and a method for manufacturing the same. The semiconductor device includes a semiconductor substrate including first and second well areas doped with second conductive ions, a third well area in the first well and doped with the ... | 03/09/2010 |
| 7612395 | CMOS image sensors CMOS image sensors and methods for fabricating the same are disclosed. A disclosed CMOS image sensor comprises: a semiconductor substrate; a photo diode; a microlens located over the photo diode; and a color filter layer located over the microlens. ... | 11/03/2009 |
| 7604797 | Compositions and methods for treating burns The present invention provides compositions and methods for treating burns comprising administering to a burn area of a subject in need thereof of a therapeutically effective amount of a composition comprising an anti-cytokine or anti-inflammatory agent or a functio... | 10/20/2009 |
| 7588986 | Method of manufacturing a semiconductor device According to an exemplary embodiment of the present invention, a method of manufacturing a semiconductor device having active regions including a SONOS device region, a high voltage device region, and a logic device region, includes defining the active regions by fo... | 09/15/2009 |
| 7566612 | Method of fabricating capacitor in semiconductor device and semiconductor device using the same A method of fabricating a capacitor in a semiconductor device is provided. The method includes steps of depositing a metal layer for forming a lower electrode on a semiconductor substrate; forming, using an oxidation rate differential, an uneven structure in corresp... | 07/28/2009 |
| 7560369 | Method of forming metal line in semiconductor device The present invention provides a method of forming metal lines in a semiconductor device having advantages of preventing an “explosion” phenomenon during a dual damascene process so as to improve the yield of the device. An exemplary embodiment of the present in... | 07/14/2009 |
| 7550373 | Method of forming a salicide layer for a semiconductor device Methods of fabricating semiconductor devices are disclosed. An illustrated example method protects spacers and active areas by performing impurity ion implantation on an oxide layer prior to etching the oxide layer. The illustrated method includes forming a gate on ... | 06/23/2009 |
| 7544582 | Semiconductor device and method for fabricating the same A semiconductor device and a method for fabricating the same may improve the isolation characteristics without deterioration of the junction diode characteristics and an increase in a threshold voltage of a MOS transistor. The device includes a semiconductor substra... | 06/09/2009 |