Bizarre Patents
Decorative Jeweled Wheel Cover
An improved wheel is provided wherein decorative items such as gem stones are embedded in either the wheel surface, a special mounting section attached to the wheel surface, or to a spoke strap that wraps around each spoke and positions embedded gem stones on the outside surface of the spoke.
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| Number | Title | Issue Date |
| 6709749 | Method for the reduction of lateral shrinkage in multilayer circuit boards on a substrate A method of controlling shrinkage in aligned green tape stacks during firing comprises providing a topmost layer of a ceramic material having a sintering temperature higher than that of the ceramic used to make the green tapes and firing above the sintering temperat... | 03/23/2004 |
| 6619302 | Cleaning composition and apparatus for removing biofilm and debris from lines and tubing and method therefor Biofilm and debris can be removed from the interior and exterior surfaces of small bore tubing by passing an aqueous cleaning solution of water, one or more surfactants and preferably a source of hydrogen peroxide, optionally including small inert solid p... | 09/16/2003 |
| 6607640 | Temperature control of a substrate A method of improving the temperature control of a clamped substrate mounted on a substrate support that is biased, the substrate support having a passage therethrough to permit a flow of backside gas for heating or cooling the substrate, whereby the pres... | 08/19/2003 |
| 6518502 | Ceramic multilayer circuit boards mounted on a patterned metal support substrate A package for an electronic component includes a metal support substrate having a pattern of openings therethrough and a body of an insulating material, such as glass or ceramic, on and bonded to the surface of the support substrate. The body is formed fr... | 02/11/2003 |
| 6509274 | Method for forming aluminum lines over aluminum-filled vias in a semiconductor substrate A method for forming aluminum lines over aluminum-filled vias in a semiconductor substrate that can compensate for some misalignment between the filled vias and the lines. By alternately depositing liner-barrier layers and aluminum layers on the substrate... | 01/21/2003 |
| 6468601 | Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial... | 10/22/2002 |
| 6444277 | Method for depositing amorphous silicon thin films onto large area glass substrates by chemical vapor deposition at high deposition rates Amorphous silicon thin films can be deposited onto large area glass substrates at high deposition rates by chemical vapor deposition using pressure of at least 0.8 Torr and temperatures of about 270-350° C. and fairly high gas flow rates of silane in a h... | 09/03/2002 |
| 6402850 | Depositing polysilicon films having improved uniformity and apparatus therefor A barrier to prevent reactant gases from reaching the surfaces of a susceptor support for a substrate upon which polysilicon films are to be deposited provides improved uniformity of the depositing film across the substrate, and prevents substrate-to-subs... | 06/11/2002 |
| 6338874 | Method for multilayer CVD processing in a single chamber Multilayer deposition of thin films onto glass substrates to form thin film transistors can be carried out in the same chamber under similar reaction conditions at high deposition rates. We have found that sequential thin layers of silicon nitride and amo... | 01/15/2002 |
| 6326340 | Cleaning composition and apparatus for removing biofilm and debris from lines and tubing and method therefor Biofilm and debris can be removed from the interior and exterior surfaces of small bore tubing by passing an aqueous cleaning solution of water, one or more surfactants and preferably a source of hydrogen peroxide, optionally including small inert solid p... | 12/04/2001 |
| 6270621 | Etch chamber A conventional plasma etch chamber is modified to reduce particulate generation in the chamber that contaminates the chamber and substrates mounted on a pedestal support being processed therein. A clamping ring cover in the chamber is made of ceramic. Gro... | 08/07/2001 |
| 6245653 | Method of filling an opening in an insulating layer The present invention is about a method for filling an opening in an insulating layer in a fast and highly reliable way and can be used to fill openings such as trenches and via holes simultaneously. This method is based on the principle of reaction enhan... | 06/12/2001 |
| 6238803 | Titanium nitride barrier layers Improved titanium nitride barrier layers are formed by depositing a first titanium layer; treating this layer with an oxygen plasma to form an oxygen-containing titanium layer thereover; depositing a titanium nitride layer over the oxygen-containing titan... | 05/29/2001 |
| 6207304 | Method of forming silicon oxy-nitride films by plasma-enhanced chemical vapor deposition An improved method of producing silicon oxy-nitride films is provided by utilizing a reactant gas mixture of silane, nitrous oxide and nitrogen at a low deposition temperature of less than 250° C. by flowing the reactant gas mixture through a gas inlet m... | 03/27/2001 |
| 6172322 | Annealing an amorphous film using microwave energy A system and method for annealing a film on a substrate in a processing chamber, including a microwave generator disposed to provide microwaves to an area within the interior of the chamber. The microwaves have a frequency such that the film is substantia... | 01/09/2001 |
| 6123864 | Etch chamber A conventional plasma etch chamber is modified to reduce particulate generation in the chamber that contaminates the chamber and substrates mounted on a pedestal support being processed therein. A clamping ring cover in the chamber is made of ceramic. Gro... | 09/26/2000 |
| 6110530 | CVD method of depositing copper films by using improved organocopper precursor blend Copper films having improved properties are deposited by chemical vapor deposition from an organocopper precursor of a blend of copper hexafluoroacetylacetonate trimethylvinylsilane and from about 1.0 to 5.0 percent by weight of trimethylvinylsilane that ... | 08/29/2000 |
| 6110836 | Reactive plasma etch cleaning of high aspect ratio openings Native oxides can be removed from a substrate having high aspect ratio openings therein by using a plasma gas precursor mixture of a reactive halogen-containing gas and a carrier gas such as helium. The lightweight ions generated in the plasma react with ... | 08/29/2000 |
| 6110821 | Method for forming titanium silicide in situ Titanium is sputtered in an ionized metal plasma sputtering chamber to form titanium silicide in situ in the bottom of openings onto silicon in a series of steps that change the temperature and deposition conditions of sputtering. Ionized titanium is sput... | 08/29/2000 |
| 6071811 | Deposition of titanium nitride films having improved uniformity I have found that in order to improve sheet resistance uniformity of metal nitride films, such as titanium nitride, the chamber must be operated at low pressure. The nitrogen gas flow rates required to deposit metal nitride is determined, and the pumping ... | 06/06/2000 |
| 6055927 | Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial... | 05/02/2000 |
| 6057237 | Tantalum-containing barrier layers for copper An improved barrier layer of tantalum to prevent diffusion of copper into a dielectric layer or silicon substrate is made by alternately sputter depositing thin amorphous tantalum layers and tantalum nitride layers. The resultant wholly amorphous tantalum... | 05/02/2000 |
| 6027572 | Cleaning method for removing biofilm and debris from lines and tubing Biofilm and debris can be removed from the interior and exterior surfaces of small bore tubing by passing an aqueous cleaning solution of water, one or more surfactants and preferably a source of hydrogen peroxide, optionally including small inert solid p... | 02/22/2000 |
| 5980686 | System and method for gas distribution in a dry etch process A system and method for distributing gas to a substrate in a dry etch chamber make use of different flow channels to distribute the gas to different portions of a substrate. A first flow channel can be oriented to distribute gas to an inner portion of the... | 11/09/1999 |
| 5943600 | Treatment of a titanium nitride layer to improve resistance to elevated temperatures A method of stabilizing chemical vapor deposited titanium nitride layers so that they can withstand a subsequent high temperature deposition of aluminum which comprises heating said film in nitrogen containing from about 3-15% by volume of oxygen. When al... | 08/24/1999 |
| 5932286 | Deposition of silicon nitride thin films Thin, uniform films of silicon nitride can be deposited onto a single substrate in a low pressure chemical vapor deposition process at a practicable rate from a gas mixture including a silane precursor gas and ammonia by maintaining the pressure at betwee... | 08/03/1999 |
| 5928732 | Method of forming silicon oxy-nitride films by plasma-enhanced chemical vapor deposition A method of producing silicon oxy-nitride films is provided by utilizing a reactant gas mixture of silane, nitrous oxide and nitrogen at a low deposition temperature of less than 250° C. by flowing the reactant gas mixture through a gas inlet manifold wh... | 07/27/1999 |
| 5919342 | Method for depositing golden titanium nitride Golden TiN films having uniform sheet resistance are deposited from a plasma sputtering chamber by initially saturating the chamber with nitrogen using high nitrogen gas flow rates and then reducing the nitrogen gas flow rates and reducing the pressure in... | 07/06/1999 |
| 5895266 | Titanium nitride barrier layers Improved titanium nitride barrier layers are formed by depositing a first titanium layer; treating this layer with an oxygen plasma to form an oxygen-containing titanium layer thereover; depositing a titanium nitride layer over the oxygen-containing titan... | 04/20/1999 |
| 5876797 | Low temperature high pressure silicon deposition method A method of producing doped and undoped silicon layers on a substrate by chemical vapor deposition at elevated pressures of from about 10 to about 350 Torr whereby deposition occurs at practicable rates. A substrate is loaded in a vacuum chamber, the temp... | 03/02/1999 |
| 5876574 | Magnet design for a sputtering chamber In order to improve the uniformity of erosion of a sputtering chamber target during sputtering, and to prevent re-deposition of target material onto the target surface, the size and shape of the magnet pair above the target is chosen to maximize uniform e... | 03/02/1999 |
| 5517077 | Ion implantation having increased source lifetime Ion implantation equipment is modified so as to provide filament reflectors to a filament inside of an arc chamber, and to remove the electrical insulators for the filament outside of the arc chamber and providing a means of shielding, thereby reducing th... | 05/14/1996 |
| 5487127 | Rapid thermal heating apparatus and method utilizing plurality of light pipes A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps i... | 01/23/1996 |
| 5484011 | Method of heating and cooling a wafer during semiconductor processing A clamping ring and temperature regulated platen for clamping a wafer to the platen and regulating the temperature of the wafer. The force of the clamping ring against the wafer is produced by the weight of the clamping ring. A roof shields all but a few ... | 01/16/1996 |
| 5483138 | System and method for automated positioning of a substrate in a processing chamber An improved position control means for robotic handling systems; particularly, a system and method for determining the centerpoint of a moving object, such as a semiconductor wafer, and calibration of the object support, using an array of sensors position... | 01/09/1996 |
| 5476359 | Robotically loaded epitaxial deposition apparatus A susceptor carrying semiconductor wafers for processing is suspended from a compliant attachment at its upper end and is lowered into a reaction chamber for processing. At the completion of processing, the susceptor is withdrawn vertically to permit a ro... | 12/19/1995 |
| 5476520 | Shield assembly for semiconductor wafer supports A method for preventing cross-contamination of semiconductor wafers during processing comprising covering a surface portion of a support assembly with a process compatible material, engaging a semiconductor wafer with the support assembly, processing the ... | 12/19/1995 |
| 5455070 | Variable rate distribution gas flow reaction chamber A wafer processing reactor having an input manifold to enable control of a process gas flow profile over a wafer that is being processed. Both process gas relative concentrations and flow rates can be controlled, thereby enabling an increased uniformity o... | 10/03/1995 |
| 5443997 | Method for transferring heat to or from a semiconductor wafer using a portion of a process gas A method for heating or cooling a semiconductor wafer in semiconductor processing apparatus is described which comprises directing into contact with a surface of the wafer at least a portion of one or more components of the process gas to transfer heat be... | 08/22/1995 |
| 5403459 | Cleaning of a PVD chamber containing a collimator When a collimator is employed between the target and a substrate support in a physical vapor deposition chamber, since the collimator is grounded to the chamber walls, the chamber becomes divided electrically, because the collimator acts as a barrier to t... | 04/04/1995 |
