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| Number | Title | Issue Date |
| 8163619 | Fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone An asymmetric insulated-gate field effect transistor (100U or 102U) is provided along an upper surface of a semiconductor body so as to have first and second source/drain zones (240 and 242 or 280 and 282) laterally separate... | 04/24/2012 |
| 8148777 | Structure and fabrication of insulated-gate field-effect transistor with hypoabrupt change in body dopant concentration below source/drain zone An insulated-gate field-effect transistor (100, 100V, 140, 150, 150V, 160, 170, 170V, 180, 180V, 190, 210, 210W, 500, 510, or 530; or 220, 220W, or 540) is provided with a hypoabrupt vertical dopant profile below one (104; or 264 or 564) of its source/drain zones fo... | 04/03/2012 |
| 8129262 | Fabrication of field-effect transistor with vertical body-material dopant profile tailored to alleviate punchthrough and reduce current leakage Fabrication of an insulated-gate field-effect transistor (110) entails separately introducing three body-material dopants, typically through an opening in a mask, into body material (50) of a semiconductor body so as to reach respective maximum dopant ... | 03/06/2012 |
| 8118715 | Multi-function excercise machine suitable for home use An exercise machine suitable for exercising a person's muscles contains a frame (100Y), a seat (102) situated over the frame, a seatback (104), a connection mechanism (106Y) for flexibly and adjustably connecting the seatback to the frame... | 02/21/2012 |
| 8101479 | Fabrication of asymmetric field-effect transistors using L-shaped spacers A gate electrode (302) of a field-effect transistor (102) is defined above, and vertically separated by a gate dielectric layer (300) from, a channel-zone portion (284) of body material of a semiconductor body. Semiconductor dopant is int... | 01/24/2012 |
| 8034679 | Fabrication of field-effect transistor having hypoabrupt body dopant distribution below source/drain zone An insulated-gate field-effect transistor (100, 100V, 140, 150, 150V, 160, 170, 170V, 180, 180V, 190, 210, 210W, 220, 220U, 220V, 220W, 380, or 480) is fabricated so as to have a hypoabrupt... | 10/11/2011 |
| 8030151 | Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length A bipolar transistor (101) has a base (243) formed with an intrinsic base portion (2431), a base contact portion (245C), and a base link portion (243L) that extends between the intrinsic base portion and the base contact portion. An isolating dielectric layer (267-1... | 10/04/2011 |
| 8013390 | Semiconductor architecture having field-effect transistors especially suitable for analog applications An insulated-gate field-effect transistor (100, 100V, 140, 150, 150V, 160, 170, 170V, 180, 180V, 190, 210, 210W, 220, 220U, 220V, 220W, 380, or 480) has a hypoabrupt vertical dopant profile below ... | 09/06/2011 |
| 8005135 | Receiver system with interdependent adaptive analog and digital signal equalization An analog equalizer (613 and 614) adaptively equalizes an input analog signal affected with intersymbol interference (“ISI”), or an intermediate analog signal generated therefrom, to produce a filtered partially equalized analog signal with reduced... | 08/23/2011 |
| 7973372 | Semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopants An insulated-gate field-effect transistor (100) provided along an upper surface of a semiconductor body contains a pair of source/drain zones (240 and 242) laterally separated by a channel zone (244). A gate electrode (262) overlie... | 07/05/2011 |
| 7972918 | Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applications A semiconductor structure is provided with (i) an empty well having relatively little well dopant near the top of the well and (ii) a filled well having considerably more well dopant near the top of the well. Each well is defined by a corresponding body-material reg... | 07/05/2011 |
| 7968921 | Asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions An asymmetric insulated-gate field-effect transistor (100) has a source (240) and a drain (242) laterally separated by a channel zone (244) of body material (180) of a semiconductor body. A gate electrode (262) overlies a ga... | 06/28/2011 |
| 7936020 | Dual-directional electrostatic discharge protection device A two-terminal ESD protection structure formed by an arrangement of five adjacent semiconductor regions (112, 114, 116, 118, and 120) of alternating conductivity type provides protection against both positive and negative ESD voltages. The middle semic... | 05/03/2011 |
| 7879669 | Fabrication of field-effect transistor with reduced junction capacitance and threshold voltage of magnitude that decreases with increasing channel length At least one source/drain zone (140, 142, 160, or 162) of an enhancement-mode insulated-gate field-effect transistor (120 or 122) is provided with graded junction characteristics to reduce junction capacitance, thereby increasing switchin... | 02/01/2011 |
| 7863681 | Semiconductor structure utilizing empty and filled wells An insulated-gate field-effect transistor (100, 100V, 140, 150, 150V, 160, 170, 170V, 180, 180V, 190, 210, 210W, 220, 220U, 220V, 220W, 380, or 480) has a hypoabrupt vertical dopant profile below ... | 01/04/2011 |
| 7838930 | Insulated-gate field-effect transistor with hypoabrupt step change in body dopant concentration below source/drain zone An insulated-gate field-effect transistor (500, 510, 530, or 540) has a hypoabrupt step-change vertical dopant profile below one (104 or 564) of its source/drain zones for reducing the parasitic capacitance along the pn junction between t... | 11/23/2010 |
| 7838369 | Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applications An insulated-gate field-effect transistor (100, 100V, 140, 150, 150V, 160, 170, 170V, 180, 180V, 190, 210, 210W, 220, 220U, 220V, 220W, 380, or 480) is fabricated so as to have a hypoabrupt vertic... | 11/23/2010 |
| 7785971 | Fabrication of complementary field-effect transistors with vertical body-material dopant profiles tailored to alleviate punchthrough and reduce current leakage Fabrication of complementary first and second insulated-gate field-effect transistors (110 or 112 and 120 or 122) from a semiconductor body entails separately introducing (i) three body-material dopants into the body material (50) ... | 08/31/2010 |
| 7756228 | Transceiver system with analog and digital signal echo cancellation having adaptably adjustable filter characteristics Analog echo-cancelling circuitry (611 and 627) operates on an input analog signal that includes an echo of an output signal, or on an analog signal generated from the input signal, to produce an analog signal with reduced echo. An analog-to-digital con... | 07/13/2010 |
| 7719862 | Power factor correction by measurement and removal of overtones A power factor correction circuit (42/44) responsive to an input power supply signal at an input supply voltage (VAC) that varies largely sinusoidally with time at a fundamental supply frequency contains regulator/control circuitry (60, 62, ... | 05/18/2010 |
| 7701005 | Semiconductor structure in which like-polarity insulated-gate field-effect transistors have multiple vertical body dopant concentration maxima and different halo pocket characteristics Each of a pair of differently configured like-polarity insulated-gate field-effect transistors (40 or 42 and 240 or 242) in a semiconductor structure has a channel zone of semiconductor body material, a gate dielectric layer overlying the... | 04/20/2010 |
| 7700980 | Structure and fabrication of field-effect transistor for alleviating short-channel effects Each of a pair of like-polarity IGFETs (40 or 42 and 240 or 242) has a channel zone (64 or 84) situated in body material (50). Short-channel effects are alleviated by arranging for the net dopant concentration in the ... | 04/20/2010 |
| 7664172 | Receiver system having analog pre-filter and digital equalizer A receiver system contains an analog pre-filter (207 or 619), an analog-to-digital converter (210), a digital equalizer (212), and a decoder (605) arranged sequentially for processing an input analog signal (yk). The pre-filter produces a filtered analog ... | 02/16/2010 |
| 7646807 | Receiver system with interdependent adaptive analog and digital signal equalization An analog equalizer (613 and 614) adaptively equalizes an input analog signal affected with intersymbol interference (“ISI”), or an intermediate analog signal generated therefrom, to produce a filtered partially equalized analog signal with reduced... | 01/12/2010 |
| 7642574 | Semiconductor architecture having field-effect transistors especially suitable for analog applications An insulated-gate field-effect transistor (100, 100V, 140, 150, 150V, 160, 170, 170V, 180, 180V, 190, 210, 210W, 220, 220U, 220V, 220W, 380, or 480) has a hypoabrupt vertical dopant profile below ... | 01/05/2010 |
| 7595244 | Fabrication of like-polarity insulated-gate field-effect transistors having multiple vertical body dopant concentration maxima and different halo pocket characteristics Fabrication of two differently configured like-polarity insulated-gate field-effect transistors (40 or 42 and 240 or 242) entails introducing multiple body-material semiconductor dopants of the same conductivity type into a semiconductor ... | 09/29/2009 |
| 7595243 | Fabrication of semiconductor structure having N-channel channel-junction field-effect transistor A semiconductor technology combines a normally off n-channel channel-junction insulated-gate field-effect transistor (“IGFET”) (104) and an n-channel surface-channel IGFET (100 or 160) to reduce low-frequency 1/f noise. The channel-junction ... | 09/29/2009 |
| 7579642 | Gate-enhanced junction varactor A semiconductor junction varactor utilizes gate enhancement for enabling the varactor to achieve a high ratio of maximum capacitance to minimum capacitance. ... | 08/25/2009 |
| 7526053 | Sequence detector using viterbi algorithm with soft output error correction A sequence detector (1400-w) operating generally according to the Viterbi algorithm contains a branch metric generator (1402-w), comparison circuitry (1403-w), and symbol generation circuitry (1404, 1405, and 1406 | 04/28/2009 |
| 7473152 | Sealing of flat-panel device A flat-panel display is hermetically sealed by a process in which a first plate structure (30) is positioned generally opposite a second plate structure (32) such that sealing material (34) provided over the second plate structure lies between t... | 01/06/2009 |
| 7443936 | Sequence detector using Viterbi algorithm with reduced complexity sequence detection via state reduction using symbol families A sequence detector (1600-w) operating generally according to the Viterbi algorithm uses state reduction via division into symbol families to reduce the complexity of sequence detection. The sequence detector contains a branch metric generator (1402-w)... | 10/28/2008 |
| 7419863 | Fabrication of semiconductor structure in which complementary field-effect transistors each have hypoabrupt body dopant distribution below at least one source/drain zone Complementary IGFETs (210W and 220W or 530 and 540) are fabricated so that the body dopant concentration in each IGFET decreases by at least 10 in moving from a subsurface location in the body material of that IGFET up to one of it... | 09/02/2008 |
| 7381638 | Fabrication technique using sputter etch and vacuum transfer First material (106) is situated on the surface of a substructure (100 and 102) and in an opening (104), such as a Wench, that extends partway through the substructure. Second material (108) is situated on the first material in the... | 06/03/2008 |
| 7327541 | Operation of dual-directional electrostatic discharge protection device A two-terminal ESD protection structure formed by an arrangement of five adjacent semiconductor regions (112, 114, 116, 118, and 120) of alternating conductivity type provides protection against both positive and negative ESD voltages. The middle semic... | 02/05/2008 |
| 7301388 | Charge pump with ensured pumping capability An n-stage charge pump contains n primary capacitive elements (CC1-CCn or CD1-CDn), n+1 charge-transfer cells (601-60n+1, 1101-110n+1, 1201-120n+1, or 130 | 11/27/2007 |
| 7254198 | Receiver system having analog pre-filter and digital equalizer A receiver system suitable for a local area network contains an analog pre-filter (207 or 619), an analog-to-digital converter (210), a digital equalizer (212), and a decoder (605). A symbol-information-carrying input analog signal... | 08/07/2007 |
| 7235862 | Gate-enhanced junction varactor A semiconductor junction varactor utilizes gate enhancement for enabling the varactor to achieve a high ratio of maximum capacitance to minimum capacitance. ... | 06/26/2007 |
| 7184450 | System and method for decoding audio/video data such as DVD or/and DVB data A system (20) for decoding a data stream allocated into data packets contains a control unit (54), a stream demultiplexer (26), audio and video decoders (38 and 40), a memory management unit (60), and audio and video input a... | 02/27/2007 |
| 7176530 | Configuration and fabrication of semiconductor structure having n-channel channel-junction field-effect transistor A semiconductor technology combines a normally off n-channel channel-junction insulated-gate field-effect transistor (“IGFET”) (104) and an n-channel surface-channel IGFET (100 or 160) to reduce low-frequency 1/f noise. The channel-junction ... | 02/13/2007 |
| 7145191 | P-channel field-effect transistor with reduced junction capacitance The source/drain zones (140 and 142 or 160 and 162) of a p-channel IGFET (120 or 122) are provided with graded-junction characteristics to reduce junction capacitance, thereby increasing switching speed. Each source/drain zo... | 12/05/2006 |
