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Attorney: McGlynn; Daniel R.


Number of patents: 166
Last date: April 05, 1988

1          
NumberTitleIssue Date
4735913Self-aligned fabrication process for GaAs MESFET devices
A self-aligned process for fabricating a GaAs semiconductor MESFET by depositing a layer of tungsten over the GaAs substrate, and ion implanting the substrate to provide channel doping. A gate composed of a conductive refractory material is deposited and ...
04/05/1988
4734910Self mode locked semiconductor laser diode
A semiconductor laser diode which operates in an extended optical cavity in conjunction with a negative resistance device such as a Gunn diode for sustained mode-locked operation. The circuit is capable of generating high repetition rate picosecond optica...
03/29/1988
4729963Fabrication method for modified planar semiconductor structures
A process for fabricating a semiconductor device or a semiconductor substrate having a first major surface on which active semiconductor devices are to be formed, and a second major surface. An etch stop layer is provided on the first major surface. A lay...
03/08/1988
4672405Multiple quantum well frequency multiplier circuit
A frequency multiplier circuit for producing higher order harmonics of an input frequency is disclosed. The frequency multiplier circuit comprises a multiple quantum well semiconductor device which is used to couple energy from an input circuit tuned to t...
06/09/1987
4593281Local area network interframe delay controller
In a data communications network having a plurality of information processing sytems coupled to a communication channel which serially transmits data in the form of information packets, a network controller is provided between the communication channel an...
06/03/1986
4590467Local area network interface controller
A network controller includes an interface unit connected to a communication network channel for transferring data in the form of information packets to and from the channel; a receive buffer connected for storing in parallel form the data packets transfe...
05/20/1986
4573133Signal processor for compensating detector non-uniformities
A signal processing device for the correction of signal amplitude distortion occurring in a plurality of signalling channels such as obtained from a detector array in which each detector has a different non-uniform response. Compensatory amplitude adjustm...
02/25/1986
4571538Mask alignment measurement structure for semiconductor fabrication
A method of quantitatively measuring the relative alignment of elements on a surface of a semiconductor body formed by two sequential masking steps during processing is provided. A fixed pattern of rectangular images are formed on a first mask; and a fixe...
02/18/1986
4547792Selective access array integrated circuit
A semiconductor integrated circuit is described which includes an array of electronic devices and a plurality of electronic access devices. The access devices consist of sets of MOSFETs which may be turned on by the joint action of X and Y address lines t...
10/15/1985
4536882Embedded absorber X-ray mask and method for making same
A mask which is especially useful in X-ray lithography wherein the X-ray absorber material is embedded in the mask membrane....
08/20/1985
4507852Method for making a reliable ohmic contact between two layers of integrated circuit metallizations
A method of fabricating a semiconductor integrated circuit by providing a semiconductor body having a major surface; depositing a first layer of a conductive material on the major surface of the semiconductor body, and depositing a layer of a refractory s...
04/02/1985
4507741Computing device
A digital data processor adapted to be responsive to an applied signal input (xn) for generating an output signal indicative of a preselected function of the signal input, and comprising signal sampling memory means adapted to be responsive to ...
03/26/1985
4484143CCD Demodulator circuit
A semiconductor integrated circuit using charged coupled device (CCD) technology for performing demodulation of time-varying signals which have been phase or amplitude modulated. The CCD circuit performs a sampling of the time-varying signal at a suitable...
11/20/1984
4473834Light emitting transistor array
A light emitting bipolar transistor, adapted to produce light from cathodoluminescence, upon being biased into conduction, the light emitting bipolar transistor being formed on the top surface of a relatively flat semiconductor substrate and having active...
09/25/1984
4464586Squaring circuit bypass
A digital signal bypass circuit including a two terminal clock input for supplying a clock input signal with a predetermined first frequency. A divide-by-two squaring circuit is also provided which is input for synchronously translating the clock input si...
08/07/1984
4453800Selectable field-of-view infrared lens
An infrared lens system for projecting an image from object space onto a flat image plane, the lens system being corrected over the spectral region of 3.3 to 4.2 microns and having a selectable narrow field of view comprising: an objective lens system hav...
06/12/1984
4454481Shielded amplifier
A shielded amplifier adapted for use with an infrared detector array mounted on a focal plane and operating in a cryogenically cooled environment and adapted to receive a signal output from a high impedance signal source, the shielded amplifier being requ...
06/12/1984
4450368AC Coupled chopper stabilized differential comparator
An ac coupled, chopper stabilized differential comparator circuit characterized receiving a differential signal voltage applied between a signal input terminal and a reference signal input terminal, providing differential outputs at a first and second dif...
05/22/1984
4447497CVD Process for producing monocrystalline silicon-on-cubic zirconia and article produced thereby
A method for producing monocrystalline semiconductor-on-insulator structures and article produced thereby, by the steps of heat treating a polished substrate of cubic zirconia to approximately 1150°-1400° C. for time to remove sufficient oxygen from the...
05/08/1984
4444617Reactive ion etching of molybdenum silicide and N+ polysilicon
An anisotropic etching processing for fabricating a solid state device which consists of the steps of providing a layer of silicon on the substrate and depositing a layer of molysilicide on the silicon layer. The molysilicide layer is then masked to defin...
04/24/1984
4435784Multi-replicator stretcher detector
A detector for magnetic bubble domain devices including an input path for receiving and propagating magnetic bubble domains, an expander device which intersects the input path and functions to expand the bubble domain in a first direction, and a replicati...
03/06/1984
4432612Phthalocyanine electrochromic display with improved cycle life
An electrochromic display cell including a pair of enclosure plates, at least one of which is transparent, and a counter electrode and a display electrode disposed between the enclosure plates. A layer of electrochromic material is disposed on the display...
02/21/1984
4432134Process for in-situ formation of niobium-insulator-niobium Josephson tunnel junction devices
A method of forming a superconductor-barrier-superconductor junction device by the steps of depositing a first superconductive layer on a substrate, forming a barrier layer on the first superconductive layer and depositing a second superconductive layer o...
02/21/1984
4430587MOS Fixed delay circuit
A MOS time delay circuit including a MOS regulated voltage supply circuit for supplying a voltage proportional to a predetermined trigger voltage and a RC delay circuit having a first input connected to the regulated voltage supply circuit, and a second i...
02/07/1984
4427259Selectable field-of-view infrared lens
A selectable field-of-view infrared lens is disclosed for projecting an image from object space onto a flat image plane, the selectable field-of-view infrared lens being corrected over the spectral region of 3.3 to 4.2 microns and having a selectable wide...
01/24/1984
4424577Conductorless bubble domain switch
A magnetic bubble domain system including a planar layer of magnetic material in which magnetic bubble domains can be propagated; and first and second bubble domain guide structure coupled to the layer and defining respective first and second bubble propa...
01/03/1984
4423489Replicator for ion-implanted bubble domain devices using stretching action of charged wall
A replicator for an ion-implanted magnetic bubble domain device including a single level conductor bubble cutting element disposed between first and second spaced apart bubble domain guide structures. The charged wall movement in response to the rotating ...
12/27/1983
4416050Method of fabrication of dielectrically isolated CMOS devices
A method of fabricating an integrated circuit on a body of semiconductor material of a first conductivity type and a first dopant concentration by depositing a layer of semiconductor material of first conductivity type and a second dopant concentration on...
11/22/1983
4415990Complementary bi-level magnetic bubble propagation circuit
A bi-level magnetic bubble domain propagation structure in which the domain guide structure is formed by a spatially periodic pattern of permalloy implemented on two discrete levels separated by a substantially vertical gap. The structure forms a pattern ...
11/15/1983
4414507Copper embedded ferrite coil arrangement for supplying uniform rotating field in full frequency range for testing magnetic bubble devices
A coil arrangement for testing magnetically operative devices comprising means for mounting a magnetically operative device to be tested by an external magnetic field; first and second coil means disposed symmetrically with respect to the place of the dev...
11/08/1983
4403304Replicator for ion-implanted bubble domain devices
A replicator for a magnetic bubble domain device including a hairpin loop conductor element traversing first and second spaced apart bubble domain guide structures. The replicator functions to replicate a bubble domain travelling along the first bubble pr...
09/06/1983
4389615CCD Demodulator circuit
A semiconductor integrated circuit using charged coupled device (CCD) technology for performing demodulation of time-varying signals which have been phase or amplitude modulated. The CCD circuit performs a sampling of the time-varying signal at a suitable...
06/21/1983
4388700Nucleation bubble generator for bubble domain devices
A magnetic bubble domain device nucleation source for producing magnetic bubble domains is disclosed, in which bubble domains along with possibly unwanted duplicate bubble domains are produced in response to a current pulse. A first bubble domain guide st...
06/14/1983
4378410Compliant glass for solid state devices
A solid state device including glass containing SiO2, consisting essentially of the composition, in percent by weight, in the range of:...
03/29/1983
4376137Method of fabricating a bi-level magnetic bubble propagation circuit
A bi-level magnetic bubble domain propagation structure in which the domain guide structure is formed by a spatially periodic pattern of permalloy implemented on two discrete levels separated by a substantially vertical gap. The structure forms a compleme...
03/08/1983
4372985Ion implantation for hard bubble suppression
A method for processing a magnetic bubble domain device for hard bubble suppression comprising the steps of providing a non-magnetic substrate; providing a thin layer of magnetic material capable of supporting magnetic bubble domains on a first major surf...
02/08/1983
4371236Electrochromic display using rare-earth diphthalocyanines and a low freezing-point electrolyte
An electrochromic display utilizing a rare-earth diphthalocyanine complex as the electrochromic material and a low-freezing-point aqueous solution of a metal chloride as the electrolyte is disclosed. Displayed information can be switched in less than 50 m...
02/01/1983
4369406Semiconductor magneto-transistor device
A device for reading information representing magnetization patterns on a medium by means of a time-of-flight magnetotransistor detector. The time-of-flight magnetotransistor detector consists of a bipolar transistor implemented on a semiconductor surface...
01/18/1983
4368085SOS island edge passivation structure
A silicon-on-sapphire semiconductor structure, and method of fabricating such structure, in which a silicone nitride layer is provided over the oxide layer. The silicon nitride layer is disposed over the upper edge of the silicon island, and acts to preve...
01/11/1983
4361814Distributed optical parametric amplifier
A parametric amplifier including a semiconductor body portion (10) comprising a plurality of zones (11,13,15, . . . ) of a first conductivity type, each of the zones having a thickness less than or equal to the Debye length in the semiconductor body porti...
11/30/1982
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