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A self defense weapon formed as a memo pad and which is easily held by a person's fingers, therefore making it possible to provide protection from a mugger and also to quickly and easily write a record or a message without failure of missing or forgetting significant information under a stressful situation.
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| Number | Title | Issue Date |
| 7235493 | Low-k dielectric process for multilevel interconnection using mircocavity engineering during electric circuit manufacture One embodiment of a method for forming a low-k dielectric for a semiconductor device assembly comprises forming a silicon dioxide layer, then forming a patterned masking layer such as silicon nitride on the silicon dioxide. Using the patterned nitride layer as a pat... | 06/26/2007 |
| 7199449 | Wafer backside removal to complete through-holes and provide wafer singulation during the formation of a semiconductor device A method used to form a semiconductor device comprises processing a semiconductor wafer to include one or more vias or through-holes only partially etched into the wafer, and scribe marks only partially etched into the wafer which define a plurality of semiconductor... | 04/03/2007 |
| 7199050 | Pass through via technology for use during the manufacture of a semiconductor device A method for forming vias which pass through a semiconductor wafer substrate assembly such as a semiconductor die or wafer allows two different types of connections to be formed during a single formation process. One connection passes through the wafer without being... | 04/03/2007 |
| 7187047 | Method and structure for reducing resistance of a semiconductor device feature A method used to form a semiconductor device comprises forming a polysilicon layer, forming a conductive barrier layer on the polysilicon layer, then forming a conductive nitride layer on the conductive barrier layer. Next, a conductive amorphous layer is formed on ... | 03/06/2007 |
| 7163017 | Polysilicon etch useful during the manufacture of a semiconductor device A method for etching a polysilicon layer comprises the steps of providing a semiconductor wafer substrate assembly having at least first and second features therein in spaced relation to each other which define an opening therebetween. A blanket polysilicon is forme... | 01/16/2007 |
| 7153788 | Method and apparatus for attaching a workpiece to a workpiece support A method for attaching a workpiece, for example a semiconductor die, to a workpiece holder, for example a lead frame die support, comprises the steps of interposing an uncured adhesive between the semiconductor die and the die support and preheating the adhesive fro... | 12/26/2006 |
| 7119024 | Method and structure for a self-aligned silicided word line and polysilicon plug during the formation of a semiconductor device A method used to form a semiconductor device provides a silicide layer on a plurality of transistor word lines and on a plurality of conductive plugs. In one embodiment, the word lines, one or more sacrificial dielectric layers on the word lines, conductive plugs, a... | 10/10/2006 |
| 7105403 | Double sided container capacitor for a semiconductor device and method for forming same A method for forming a double sided container capacitor comprises forming a first capacitor top plate layer within a recess in a dielectric layer, then forming a first cell dielectric on the first top plate layer. Next, first and second bottom plate layers are forme... | 09/12/2006 |
| 7101814 | Masking without photolithography during the formation of a semiconductor device A method for forming a semiconductor device comprises forming a dielectric layer over a semiconductor wafer substrate assembly having closely-spaced regions, such as a memory transistor array, and widely-spaced regions, such as a periphery. Under conditions specifie... | 09/05/2006 |
| 7094699 | Etch aided by electrically shorting upper and lower sidewall portions during the formation of a semiconductor device A method used to fabricate a semiconductor device comprises etching a dielectric which results in an undesirable charge buildup along a sidewall formed in the dielectric during the etch. The charge buildup along a top and a bottom of the sidewall can reduce the etch... | 08/22/2006 |
| 7087949 | Selective hemispherical silicon grain (HSG) conversion inhibitor for use during the manufacture of a semiconductor device A method used to form a semiconductor device comprises forming a layer such as a container capacitor layer having a bottom plate layer. The bottom plate layer is formed to define a receptacle, and a rim which defines an opening to an interior of the receptacle. The ... | 08/08/2006 |
| 7084448 | Double sided container process used during the manufacture of a semiconductor device A method used during the formation of a semiconductor device comprises providing a wafer substrate assembly comprising a plurality of digit line plug contact pads and capacitor storage cell contact pads which contact a semiconductor wafer. A dielectric layer is prov... | 08/01/2006 |
| 7078326 | Nucleation method for atomic layer deposition of cobalt on bare silicon during the formation of a semiconductor device A method used to form a cobalt metal layer on a silicon surface using an atomic layer deposition (ALD) process comprises a treatment of the silicon surface prior to cobalt formation. Treatment includes serial exposure to one or more cycles comprising a titanium nitr... | 07/18/2006 |
| 7060629 | Etch of silicon nitride selective to silicon and silicon dioxide useful during the formation of a semiconductor device A method for etching silicon nitride selective to silicon dioxide and silicon (polycrystalline silicon or monocrystalline silicon) comprises the use of oxygen along with an additional etchant of either CHF3 or CH2F2. Flow rates, powe... | 06/13/2006 |
| 7053444 | Method and apparatus for a flash memory device comprising a source local interconnect A method for forming a flash memory device having a local interconnect connecting source regions of a plurality of transistors within a sector allows for a highly selective wet etch of a dielectric region overlying the source region. An embodiment of the method comp... | 05/30/2006 |
| 7052972 | Method for forming sublithographic features during the manufacture of a semiconductor device and a resulting in-process apparatus A method for forming a semiconductor device comprises forming a layer to be etched, then forming a hard mask layer over the layer to be etched. The hard mask is etched to form an opening defined by first and second cross-sectional sidewalls in the hard mask layer. I... | 05/30/2006 |
| 7046339 | Optimized optical lithography illumination source for use during the manufacture of a semiconductor device A method and structure for optimizing an optical lithography illumination source comprises a shaped diffractive optical element (DOE) interposed between the illuminator and a lens during the exposure of a photoresist layer over a semiconductor wafer. The DOE may, in... | 05/16/2006 |
| 7018675 | Method for forming a ruthenium metal layer A method for forming a ruthenium metal layer comprises combining a ruthenium precursor with a measured amount of oxygen to form a ruthenium oxide layer. The ruthenium oxide is annealed in the presence of a hydrogen-rich gas to react the oxygen in the ruthenium oxide... | 03/28/2006 |
| 7015528 | Reduced aspect ratio digit line contact process flow used during the formation of a semiconductor device A method used during the formation of a semiconductor device comprises forming a first portion of a digit line contact plug before forming storage capacitors. Subsequent to forming storage capacitors, a second portion of the digit line plug is formed to contact the ... | 03/21/2006 |
| 7015111 | Use of selective oxidation to form asymmetrical oxide features during the manufacture of a semiconductor device A sidewall oxidation process for use during the formation of a transistor such as a flash memory cell allows for improved control of a gate oxide profile. The method comprises doping transistor source and drain regions to different doping levels, then performing a t... | 03/21/2006 |
| 6991970 | Method and apparatus for circuit completion through the use of ball bonds or other connections during the formation of semiconductor device A method used to form a semiconductor device comprises providing first and second circuit portions having first and second pad portions respectively. The second circuit portion is electrically isolated from the first circuit portion. The first and second pad portion... | 01/31/2006 |
| 6977418 | Low resistance semiconductor process and structures A process for forming a semiconductor device comprises the steps of providing a semiconductor substrate assembly comprising a semiconductor wafer having an active area formed therein, a plurality of transistor gates each having a TEOS cap thereon and a pair of nitri... | 12/20/2005 |
| 6974725 | Interconnections for a semiconductor device A method for forming an electrical contact for a semiconductor device comprises the steps of providing a semiconductor wafer section having a major surface with a plurality of conductive pads thereon and electrically coupling each pad with an elongated electrical in... | 12/13/2005 |
| 6974993 | Double-sided capacitor structure for a semiconductor device and a method for forming the structure A method used to manufacture a semiconductor device comprises providing a first conductive container capacitor top plate layer and etching the first conductive container capacitor top plate layer to form a plurality of openings therein. Subsequently, a container cap... | 12/13/2005 |
| 6943416 | Method and structure for reducing resistance of a semiconductor device feature A method used to form a semiconductor device comprises forming a polysilicon layer, forming a conductive barrier layer on the polysilicon layer, then forming a conductive nitride layer on the conductive barrier layer. Next, a conductive amorphous layer is formed on ... | 09/13/2005 |
| 6939794 | Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device A hard mask comprising boron-doped amorphous carbon, and a method for forming the hard mask, provides improved resistance to etches of a variety of materials compared with previous amorphous carbon hard mask layers. ... | 09/06/2005 |
| 6936539 | Antireflective coating for use during the manufacture of a semiconductor device An antireflective layer formed from boron-doped amorphous carbon can be removed using a process which is less likely to over etch a dielectric layer than conventional technology. This layer can be removed by exposing the layer to an oxygen plasma (i.e. an “ashingâ... | 08/30/2005 |
| 6921318 | Semiconductor die de-processing using a die holder and chemical mechanical polishing A method and apparatus for removing layers from a circuit side of a semiconductor die includes the use of a holder, for example a semiconductor wafer having an opening therein for receiving the semiconductor die. Additionally the holder can include one or more layer... | 07/26/2005 |
| 6909128 | Capacitance reduction by tunnel formation for use with a semiconductor device A method used during the manufacture of a semiconductor device comprises providing at least first, second, and third spaced conductive structures, where the second conductive structure is interposed between the first and third conductive structures. A first dielectr... | 06/21/2005 |
| 6882003 | Method and apparatus for a flash memory device comprising a source local interconnect A method for forming a flash memory device having a local interconnect connecting source regions of a plurality of transistors within a sector allows for a highly-selective wet etch of a dielectric region overlying the source region. An embodiment of the method comp... | 04/19/2005 |
| 6862202 | Low power memory module using restricted device activation A memory module for an electronic device provides means for reducing the amount of power necessary to access a desired number of data bits. This provides a design of memory modules which requires fewer DRAMs to be turned on during a read or write cycle than present ... | 03/01/2005 |
| 6797596 | Sacrificial deposition layer as screening material for implants into a wafer during the manufacture of a semiconductor device A method used during the formation of a semiconductor device reduces ion channeling during implantation of the wafer. The method comprises providing a semiconductor wafer and an unetched transistor gate stack assembly over the wafer. The unetched transistor gate sta... | 09/28/2004 |
| 6790725 | Double-sided capacitor structure for a semiconductor device and a method for forming the structure A method used to manufacture a semiconductor device comprises providing a first conductive container capacitor top plate layer and etching the first conductive container capacitor top plate layer to form a plurality of openings therein. Subsequently, a container cap... | 09/14/2004 |
| 6777351 | Masking without photolithography during the formation of a semiconductor device A method for forming a semiconductor device comprises forming a dielectric layer over a semiconductor wafer substrate assembly having closely-spaced regions, such as a memory transistor array, and widely-spaced regions, such as a periphery. Under conditions specifie... | 08/17/2004 |
| 6759320 | Method of reducing overetch during the formation of a semiconductor device A method of forming a transistor for a semiconductor device from a semiconductor wafer comprises forming a first nitride layer over the front and back of the wafer, and forming a second nitride layer over the front and back of the wafer and over the first nitride la... | 07/06/2004 |
| 6737313 | Surface treatment of an oxide layer to enhance adhesion of a ruthenium metal layer A method for forming a ruthenium metal layer on a dielectric layer comprises forming a silicon dioxide layer, then treating the silicon dioxide with a silicon-containing gas, for example silicon hydrides such as silane, disilane, or methylated silanes. Subsequently,... | 05/18/2004 |
| 6730609 | Etch aided by electrically shorting upper and lower sidewall portions during the formation of a semiconductor device A method used to fabricate a semiconductor device comprises etching a dielectric which results in an undesirable charge buildup along a sidewall formed in the dielectric during the etch. The charge buildup along a top and a bottom of the sidewall can reduce the etch... | 05/04/2004 |
| 6722376 | Polysilicon etch useful during the manufacture of a semiconductor device A method for etching a polysilicon layer comprises the steps of providing a semiconductor wafer substrate assembly having at least first and second features therein in spaced relation to each other which define an opening therebetween. A blanket polysilicon is forme... | 04/20/2004 |
| 6713348 | Method for forming an etch mask during the manufacture of a semiconductor device A method used during the formation of a semiconductor device comprises the steps of forming a polycrystalline silicon layer over a semiconductor substrate assembly and forming a silicon nitride layer over the polycrystalline silicon layer. A silicon dioxide layer is... | 03/30/2004 |
| 6709945 | Reduced aspect ratio digit line contact process flow used during the formation of a semiconductor device A method used during the formation of a semiconductor device comprises forming a first portion of a digit line contact plug before forming storage capacitors. Subsequent to forming storage capacitors, a second portion of the digit line plug is formed to contact the ... | 03/23/2004 |
