Crispy Chip Sandwich and Process of Producing a Sandwich Product
A food product comprising a multilayer cookie or snack having outer layers formed from a crispy type edible food product such as a potato chip or corn chip, etc. with an intermediate marshmallow layer being in contact with the inner surface of each crispy chip and one or more filler substances.
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| Number | Title | Issue Date |
| 7961306 | Optimizing sensitivity of optical metrology measurements Provided is a method of optimizing sensitivity of measurements of an optical metrology tool using two or more illumination beams directed to a structure on a workpiece comprising selecting target structures for measurement, obtaining diffraction signals off the sele... | 06/14/2011 |
| 7949618 | Training a machine learning system to determine photoresist parameters To train a machine learning system, a set of different values of one or more photoresist parameters, which characterize behavior of photoresist when the photoresist undergoes processing steps in a wafer application, is obtained. A set of diffraction signals is obtai... | 05/24/2011 |
| 7949490 | Determining profile parameters of a structure using approximation and fine diffraction models in optical metrology Provided is a method for determining one or more profile parameters of a structure using an optical metrology model, the optical metrology model including a profile model, an approximation diffraction model, and a fine diffraction model. A simulated approximation di... | 05/24/2011 |
| 7948630 | Auto focus of a workpiece using two or more focus parameters Provided is a method for focusing a workpiece in the Z-axis for optical metrology. The auto focusing subsystem includes a focus detector having a tilt angle, a capture range, and a plurality of sensors. A processor coupled to the focus detector is configured to util... | 05/24/2011 |
| 7912679 | Determining profile parameters of a structure formed on a semiconductor wafer using a dispersion function relating process parameter to dispersion An optical metrology model is created for a structure formed on a semiconductor wafer. The optical metrology model comprises one or more profile parameters, one or more process parameters, and dispersion. A dispersion function is obtained that relates the dispersion... | 03/22/2011 |
| 7831528 | Optical metrology of structures formed on semiconductor wafers using machine learning systems A structure formed on a semiconductor wafer is examined by obtaining a first diffraction signal measured using a metrology device. A second diffraction signal is generated using a machine learning system, where the machine learning system receives as an input one or... | 11/09/2010 |
| 7765076 | Allocating processing units to processing clusters to generate simulated diffraction signals In allocating processing units, first and second requests for jobs are obtained. First and second numbers of processing units requested are determined. First and second numbers of available processing units are determined. When the first number of available processi... | 07/27/2010 |
| 7761250 | Optical metrology system optimized with design goals Provided is a method of designing an optical metrology system for measuring structures on a workpiece where the optical metrology system is configured to meet two or more design goals. The design of the optical metrology system is optimized by using collected design... | 07/20/2010 |
| 7761178 | Automated process control using an optical metrology system optimized with design goals Provided is a method of designing an optical metrology system for measuring structures on a workpiece wherein the optical metrology system is configured to meet a plurality of design goals. The design of the optical metrology system is optimized by using collected d... | 07/20/2010 |
| 7742889 | Designing an optical metrology system optimized with signal criteria Provided is a method of designing an optical metrology system for measuring structures on a workpiece wherein the optical metrology system is configured to meet one or more signal criteria. The design of the optical metrology system is optimized by using collected s... | 06/22/2010 |
| 7742888 | Allocating processing units to generate simulated diffraction signals used in optical metrology In allocating processing units of a computer system to generate simulated diffraction signals used in optical metrology, a request for a job to generate simulated diffraction signals using multiple processing units is obtained. A number of processing units requested... | 06/22/2010 |
| 7734437 | Apparatus for designing an optical metrology system optimized with signal criteria Provided is an apparatus for designing an optical metrology system for measuring structures on a workpiece wherein the optical metrology system is configured to meet one or more signal criteria. The design of the optical metrology system is optimized by using collec... | 06/08/2010 |
| 7729873 | Determining profile parameters of a structure using approximation and fine diffraction models in optical metrology Provided is a method for determining one or more profile parameters of a structure using an optical metrology model, the optical metrology model comprising a profile model, an approximation diffraction model, and a fine diffraction model. A simulated approximation d... | 06/01/2010 |
| 7728976 | Determining photoresist parameters using optical metrology To generate a simulated diffraction signal, one or more values of one or more photoresist parameters, which characterize behavior of photoresist when the photoresist undergoes processing steps in a wafer application, are obtained. One or more values of one or more p... | 06/01/2010 |
| 7702471 | Determining one or more profile parameters of a photomask covered by a pellicle Provided is a method of determining one or more profile parameters of a photomask covered with a pellicle, the method comprising developing an optical metrology model of a pellicle covering a photomask, developing an optical metrology model of the photomask, the pho... | 04/20/2010 |
| 7667858 | Automated process control using optical metrology and a correlation between profile models and key profile shape variables A process step in fabricating a structure on a wafer in a wafer application having one or more process steps and one or more process parameters is controlled by determining a correlation between a set of profile models and one or more key profile shape variables. Ea... | 02/23/2010 |
| 7660696 | Apparatus for auto focusing a workpiece using two or more focus parameters Provided is an apparatus for auto focusing a workpiece for optical metrology measurements using an optical metrology system. The auto focusing subsystem includes a focus detector having a tilt angle, a capture range, and a plurality of sensors. A processor coupled t... | 02/09/2010 |
| 7639375 | Determining transmittance of a photomask using optical metrology Transmittance of a photomask is determined using optical metrology. In particular, reflectance of a portion of the photomask is determined by directing an incident beam of light at the portion of the photomask. The reflectance is determined by measuring light diffra... | 12/29/2009 |
| 7639370 | Apparatus for deriving an iso-dense bias Embodiments of an apparatus for deriving an iso-dense bias are generally described herein. Other embodiments may be described and claimed. ... | 12/29/2009 |
| 7639351 | Automated process control using optical metrology with a photonic nanojet A fabrication cluster can be controlled using optical metrology. A fabrication process is performed on a wafer using a fabrication cluster. A photonic nanojet, an optical intensity pattern induced at a shadow-side surface of a dielectric microsphere, is generated. A... | 12/29/2009 |
| 7636649 | Automated process control of a fabrication tool using a dispersion function relating process parameter to dispersion An optical metrology model for the structure is obtained. The optical metrology model comprising one or more profile parameters, one or more process parameters, and a dispersion. A dispersion function that relates the dispersion to at least one of the one or more pr... | 12/22/2009 |
| 7630873 | Approximating eigensolutions for use in determining the profile of a structure formed on a semiconductor wafer Eigensolutions for use in determining the profile of a structure formed on a semiconductor wafer can be approximated by obtaining a known set of eigenvectors associated with a first section of a hypothetical profile of the structure, where the known set of eigenvect... | 12/08/2009 |
| 7627392 | Automated process control using parameters determined with approximation and fine diffraction models Provided is a method of controlling a fabrication cluster using a machine learning system, the machine learning system trained developed using an optical metrology model. A simulated approximation diffraction signal is generated based on an approximation diffraction... | 12/01/2009 |
| 7617075 | Library accuracy enhancment and evaluation The accuracy of a library of simulated-diffraction signals for use in optical metrology of a structure formed on a wafer is evaluated by utilizing an identity relationship inherent to simulated diffraction signals. Each simulated diffraction signal contains at least... | 11/10/2009 |
| 7616325 | Optical metrology optimization for repetitive structures An optical metrology model for a structure to be formed on a wafer is developed by characterizing a top-view profile and a cross-sectional view profile of the structure using profile parameters. The profile parameters of the top-view profile and the cross-sectional ... | 11/10/2009 |
| 7598099 | Method of controlling a fabrication process using an iso-dense bias Embodiments of controlling a fabrication process using an iso-dense bias are generally described herein. Other embodiments may be described and claimed. ... | 10/06/2009 |
| 7596422 | Determining one or more profile parameters of a structure using optical metrology and a correlation between profile models and key profile shape variables One or more profile parameters of a structure fabricated on a wafer in a wafer application are determined by developing a correlation between a set of profile models and one or more key profile shape variables. The wafer application has one or more process steps and... | 09/29/2009 |
| 7595869 | Optical metrology system optimized with a plurality of design goals Provided is a method of designing an optical metrology system for measuring structures on a workpiece where the optical metrology system is configured to meet a plurality of design goals. Primary components of the optical metrology system affecting the design goals ... | 09/29/2009 |
| 7595471 | Auto focusing of a workpiece using an array detector each with a detector identification Provided is a method and system for auto focusing a workpiece in the Z-axis using a position sensitive focus detector. A focus detection beam is measured using a focus detector, the focus detector having an array of sensors, each sensor of the array of sensors havin... | 09/29/2009 |
| 7588949 | Optical metrology model optimization based on goals The optimization of an optical metrology model for use in measuring a wafer structure is evaluated. An optical metrology model having metrology model variables, which includes profile model parameters of a profile model, is developed. One or more goals for metrology... | 09/15/2009 |
| 7586623 | Optical metrology of single features The profile of a single feature formed on a wafer can be determined by obtaining an optical signature of the single feature using a beam of light focused on the single feature. The obtained optical signature can then be compared to a set of simulated optical signatu... | 09/08/2009 |
| 7480062 | Automated process control using parameters determined from a photomask covered by a pellicle Provided is a method of controlling a photolithography cluster or a subsequent fabrication cluster using optical metrology to determine profile parameters of a photomask structure covered with a pellicle. An optical metrology model of the pellicle is developed and i... | 01/20/2009 |