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Attorney: Lueck; Gary D.


Number of patents: 3
Last date: March 10, 2009

NumberTitleIssue Date
7501023Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10 microns is provided. These layers can be grown on large area substrates...
03/10/2009
7310053Compressed standardized keyboard
A keyboard of reduced size is provided in which multiple characters are assigned to each of the primary keys. The selection of the characters to be assigned to each specific primary key is based on the touch typing rules associated with a specific standardized keybo...
12/18/2007
7279047Reactor for extended duration growth of gallium containing single crystals
An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If de...
10/09/2007
 
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