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"What, sir, would you make a ship sail against the wind and currents by lighting a bonfire under her deck? I pray you, excuse me, I have not the time to listen to such nonsense."
Napoleon Bonaparte ; When told of the Robert Fulton steamboat
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| Number | Title | Issue Date |
| 6091256 | Contact device for making connection to an electronic circuit device A contact device having a plurality of nominally coplanar first contact elements makes electrical contact with corresponding nominally coplanar second contact elements of an electronic device when the contact device and the electronic device are positione... | 07/18/2000 |
| 6046599 | Method and device for making connection A contact device having a plurality of nominally coplanar first contact elements makes electrical contact with corresponding nominally coplanar second contact elements of an electronic device when the contact device and the electronic device are positione... | 04/04/2000 |
| 6047354 | Data processor for implementing virtual pages using a cache and register A data processor capable of supporting a plurality of page sizes without increasing the chip occupation area or the power consumption. This data processor for supporting a virtual memory is constructed of a set associative type cache memory having a plura... | 04/04/2000 |
| 6038016 | Method and apparatus for detecting and preventing counterfeiting Optical characteristic measuring systems and methods such as for determining the color or other optical characteristics of an object are disclosed. Perimeter receiver fiber optics are spaced apart from a source fiber optic and receive light from the surfa... | 03/14/2000 |
| 5796978 | Data processor having an address translation buffer operable with variable page sizes A data processor capable of supporting a plurality of page sizes without increasing the chip occupation area or the power consumption. This data processor for supporting a virtual memory is constructed of a set associative type cache memory having a plura... | 08/18/1998 |
| 5728604 | Method for making thin film transistors A method for making semiconductor thin film transistors (TFTs) having a bottom gate such that the gate electrode is formed in a furrow of an insulating layer, with a gate oxide and body polysilicon formed thereon, thereby allowing the source and drain lev... | 03/17/1998 |
| 5728491 | Phase shift mask and method of manufacture A phase shift mask and method of manufacture are disclosed in which a light shielding layer is formed on a substrate and patterned to produce parallel areas of predetermined intervals and spacings of the desired shape. A phase shift film is formed on the ... | 03/17/1998 |
| 5729034 | Semiconductor DRAM cell having a capacitor A DRAM cell and a process for formation of a capacitor of a DRAM cell. The present invention provides a lower plate electrode consisting of a first conductive layer formed upon a first inter-layer insulating layer, the first inter-layer insulating layer c... | 03/17/1998 |
| 5718990 | Semiconductor mask and method of manufacturing the same A mask and method of manufacturing is disclosed. The mask may include a transparent quartz substrate having light-transmitting regions and light-shielding regions, a light-control layer formed on the substrate excluding a portion corresponding to a light-... | 02/17/1998 |
| 5716879 | Method of making a thin film transistor A structure and fabricating method of a thin film transistor which is suitable for an SRAM memory cell. The thin film transistor structure includes: an insulation substrate; a gate electrode formed on the insulation substrate; a gate insulation film forme... | 02/10/1998 |
| 5660955 | Phase shift mask and manufacturing method thereof A phase shift mask is disclosed, which includes a substrate, a plurality of first light shading film pairs formed at an interval on the substrate, a plurality of phase shift layers formed on the first light shading film pairs, and a plurality of second li... | 08/26/1997 |
| 5652169 | Method for fabricating a programmable semiconductor element having an antifuse structure A programmable semiconductor element having an antifuse structure and a method for fabricating the same is disclosed. The fabrication method for a programmable semiconductor element having an antifuse structure includes processes for forming a first insul... | 07/29/1997 |
| 5650957 | Semiconductor memory cell and process for formation thereof A semiconductor memory cell and a process for formation thereof is disclosed. A capacitor is disposed below a transistor, so that a DRAM cell that may be suitable for a high density semiconductor device is produced. A semiconductor device according to the... | 07/22/1997 |
| 5639678 | Method of making semiconductor device with metal silicide nitride layer and metal silicide A MOSFET in accordance with this invention includes: a metal silicide layer formed on a impurity region and on the upper surface of a gate electrode; a metal silicide nitride layer formed on the metal silicide layer; and a metal nitride layer formed on th... | 06/17/1997 |
| 5632024 | Microcomputer executing compressed program and generating compressed branch addresses An executable program is stored in compressed form in a ROM, from which compressed program data is fetched to be expanded by an expandor to a pre-compression form. The expanded data is then decoded by an instruction decoder for execution. This novel setup... | 05/20/1997 |
| 5629540 | Semiconductor device having overlapped storage electrodes The capacitor area is increased with a cylinder-shaped first storage electrode overlapped with a second electrode in an area which covers two adjacent cells. Included in a semiconductor device using the invention may be: a semiconductor substrate; a word ... | 05/13/1997 |
| 5627828 | Method and circuit for detecting data collisions in communication network The circuit and method for detecting data collisions in a communication network, the circuit including: a data transition detecting section for receiving Manchester encoded data signals RXD, and detecting a transition at the center of the bit cell of the ... | 05/06/1997 |
| 5625594 | Digital video memory A digital video memory circuit. The circuit includes a DRAM for storing thereto and reading data therefrom, a register group having registers for holding data to be written to and read from the DRAM, a selector having switching transistors connecting regi... | 04/29/1997 |
| 5622873 | Process for manufacturing a resin molded image pick-up semiconductor chip having a window A process for packaging a solid type image pick-up device and a device produced by the packaging process. The process includes the steps of: forming a protecting layer on a light receiving region of an image pick-up chip formed on a semiconductor wafer; s... | 04/22/1997 |
| 5621333 | Contact device for making connection to an electronic circuit device A contact device having a plurality of nominally coplanar first contact elements makes electrical contact with corresponding nominally coplanar second contact elements of an electronic device when the contact device and the electronic device are positione... | 04/15/1997 |
| 5610870 | Circuit and method for controlling the impedance of a serial access memory A circuit for controlling a serial access memory is disclosed. A memory cell array is accessed through a pair of bit lines. One or more registers are provided for receiving and storing data through the bit lines. Sequential transmission switches connect t... | 03/11/1997 |
| 5604138 | Process for making a semiconductor MOS transistor A process for forming an MOS semiconductor device having an LDD structure is disclosed, which may include the steps of: forming a first insulating layer on a semiconductor substrate; forming a conductive layer on the first insulating layer; forming a seco... | 02/18/1997 |
| 5604140 | Method for forming fine titanium nitride film and method for fabricating semiconductor element using the same A method for forming a fine titanium nitride film and a method for fabricating a semiconductor element using this method. The method for forming a fine titanium nitride film includes the steps of depositing a titanium nitride film on a semiconductor subst... | 02/18/1997 |
| 5597745 | Method for forming TiN film and TiN film/thin TiSi2 film, and method for fabricating semiconductor element utilizing the same A method for forming a fine-textured titanium nitride film and fine-textured titanium nitride/thin titanium silicide films, and methods for fabricating semiconductor elements utilizing the same are disclosed. A thin titanium silicide film and a fine-textu... | 01/28/1997 |
| 5591550 | Phase shift mask and method for forming phase shift mask A halftone phase shift mask and a method for forming a halftone phase shift mask. The method includes: forming a halftone pattern material layer on a substrate; defining positions for forming more than one open region of a desired pattern and defining pos... | 01/07/1997 |
| 5591316 | Electrocoat painting method using guarded tubular membrane electrode cells A method of electrocoat painting using tubular guarded membrane electrode cells. An object-to-be-electrocoat painted, or counter-electrode, is positioned or moved into a paint bath. Electrical current flow is induced between the membrane electrode cells a... | 01/07/1997 |
| 5583064 | Semiconductor device and process for formation thereof A recess is formed (dug) into the surface of a substrate to form a gate channel in the recess, so that a monocrystalline source/drain region can be formed at a level higher than that of the channel. The process includes the steps of: (a) forming an insula... | 12/10/1996 |
| 5578838 | Structure of and fabricating method for a thin film transistor A thin film transistor and a fabricating method for a thin film transistor is disclosed which may be suitable for memory cells of a static random access memory (SRAM) or other devices. A thin film transistor according to this invention may include an insu... | 11/26/1996 |
| 5569619 | Method for forming a capacitor of a semiconductor memory cell A method for forming a capacitor of a memory cell is disclosed. Steps of the present invention may include: forming a first conductive layer on a substrate; forming a tantalum oxide layer on the first conductive layer; forming a silicon nitride layer on t... | 10/29/1996 |
| 5567244 | Process for cleaning semiconductor devices The present invention provides a process for cleaning semiconductor devices which enables the contamination of copper to maintained under a level of about 109 atoms/cm2 to meet the qualification of DRAMs of equal to or greater than 6... | 10/22/1996 |
| 5567656 | Process for packaging semiconductor device The process of the present invention is simplified by skipping the die bonding step, the wire bonding step and the trim-forming step of the conventional techniques. A semiconductor device may include: a plurality of bonding pads formed on the surface of t... | 10/22/1996 |
| 5565811 | Reference voltage generating circuit having a power conserving start-up circuit A power conserving circuit is disclosed which has a start-up circuit for initiating operation of a reference voltage generator. Included are a sensing circuit for producing a pulse signal in response to initial application of an external power source; a r... | 10/15/1996 |
| 5563091 | Method for isolating semiconductor elements A method for isolating semiconductor regions so that unit elements may be electrically insulated. A disclosed method includes the steps of: forming a pad oxide layer and a nitride layer on a silicon substrate, and forming an active region pattern; exposin... | 10/08/1996 |
| 5563439 | Variable operation speed MOS transistor A variable operation speed MOS transistor having a source, a drain and a gate with a plurality of contacts formed thereon. One end of the gate of the variable operation speed MOS transistor is connected to drains/sources of first MOS transistors, while th... | 10/08/1996 |
| 5563097 | Method for fabricating semiconductor device A method for burying contact holes having different depths at the same time using selective tungsten deposition at the time of fabricating a semiconductor device. The method for fabricating a semiconductor device may include the steps of: forming a first ... | 10/08/1996 |
| 5561385 | Internal voltage generator for semiconductor device An internal voltage generator for a semiconductor device, for generating an internal voltage within the device which may include: a charge pump generating a DC voltage by rectifying clock signals; a variable frequency oscillator generating variable oscill... | 10/01/1996 |
| 5527719 | Process for making a semiconductor MOS transistor using a fluid material A process for formation of an MOS semiconductor device having an LDD structure is disclosed, which may include the steps of: forming an active region and an isolation region on a semiconductor substrate; forming a first insulating layer on the surface of ... | 06/18/1996 |
| 5519749 | Horizontal charge coupled device having a multiple reset gate A horizontal charge coupled device (HCCD) is provided with a multiple reset gate in order to establish a more stable, less noisy voltage in an output node floating diffusion. Charges are transferred from an input of the HCCD to the floating diffusion by m... | 05/21/1996 |
| 5513618 | High performance ignition apparatus and method Apparatus and method for a plasma discharge for ignition in an internal combustion engine. A digital electronic system controls ignition performance and can provide an ignition discharge throughout an entire power stroke of a piston in a cylinder. The dis... | 05/07/1996 |
| 5515519 | Data processor and method utilizing coded no-operation instructions A compiler incorporates obtained information for controlling the data-processor hardware, such as the position of the branch destination of a branch instruction and the used states of registers into object codes (NOP instruction) including a no-operation ... | 05/07/1996 |
