Superstar singer Michael Jackson co-patented a "Method and means for creating anti-gravity illusion" in 1993.
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| Number | Title | Issue Date |
| 5369294 | Field effect transistor and method of fabricating A junction field effect transistor, specifically a static induction transistor. The N-type source regions are formed as two zones. First, relatively lightly doped first zones are formed by ion-implanting doping material relatively deeply into the semicond... | 11/29/1994 |
| 5361006 | Electrical circuitry with threshold control Electrical circuitry of CMOS inverter circuits in cascade providing a compatible interface between ECL logic levels and CMOS logic levels. The ECL input is applied to the gate of the N-type transistor of the first inverter circuit. A threshold control cir... | 11/01/1994 |
| 5355386 | Monolithically integrated semiconductor structure and method of fabricating such structure A heterostructure device includes a ridge-waveguide laser monolithically integrated with a ridge-waveguide rear facet monitor (RFM). An integral V-groove etched directly into the device substrate enables passive alignment of an optical fiber to the active... | 10/11/1994 |
| 5339184 | Fiber optic antenna remoting for multi-sector cell sites A base station in a cellular communications system is connected to a plurality of remote cellular sites by a communications link having a base terminal coupled to a remote terminal by two optical fibers. The base terminal receives RF downlink channels fro... | 08/16/1994 |
| 5329185 | CMOS logic circuitry providing improved operating speed Electrical circuitry of CMOS inverter circuits in cascade providing a compatible interface between ECL logic levels and CMOS logic levels. The MOS transistors of the first inverter circuit of the series are approximately three times larger than the MOS tr... | 07/12/1994 |
| 5304294 | Method and apparatus for sensing nox Apparatus and method for determining the concentration of NOx in a gas mixture. The gas mixture is supplied to two electrodes at which different NOx decomposition conditions are present. The electrodes may be of different materials or sizes or may be posi... | 04/19/1994 |
| 5300794 | Method of fabricating highly lattice mismatched quantum well structures A method of fabricating a semiconductor heterostructure includes the growth of a quantum well active region that is highly lattice-mismatched relative to a substrate. A buffer layer having a thickness above a critical value is grown on the substrate where... | 04/05/1994 |
| 5285090 | Contacts to rod shaped Schottky gate fets Electrical ohmic contacts are made to a matrix of silicon having conductive rods embedded therein without making contact to any of the rods. Those rods which extend to the surface in the selected area of the matrix to be contacted are etched to form holes... | 02/08/1994 |
| 5285202 | Broadband switch using deactivated crosspoints for establishing switching paths A broadband space switch matrix constructed from a plurality of NAND gates arranged into a set of cascaded stages to form a tree-switch multiplexing configuration. A plurality of input digital signals are applied to input ports coupled to the NAND gates i... | 02/08/1994 |
| 5272105 | Method of manufacturing an heteroepitaxial semiconductor structure Heteroepitaxial semiconductor structures of, for example, GaAs on InP or Si. The epitaxially grown GaAs is in the form of individual spaced-apart islands having maximum dimensions in the plane of the surface of the substrate of no greater than 10 micromet... | 12/21/1993 |
| 5268066 | Method of fabricating waferboard structure A waferboard assembly incorporates mechanical registration features into a substrate platform to facilitate the passive alignment of lasers integrated on a chip to fibers in integral contact with the substrate. The waferboard includes two front pedestal s... | 12/07/1993 |
| 5243652 | Location-sensitive remote database access control A communication system includes a remote mobile node which acquires time-correlated data of its actual position from a global positional system (GPS), and securely transmits the information as a position history to a central facility. The mobile node incl... | 09/07/1993 |
| 5238868 | Bandgap tuning of semiconductor quantum well structures A method of selectively tuning the bandedge of a semi-conductor heterostructure includes forming a disordered region which is spatially separated from a quantum well active region, and subsequently annealing the heterostructure so that vacancies/defects i... | 08/24/1993 |
| 5235219 | Electrical circuitry with threshold control Electrical circuitry for changing the operating voltage conditions of CMOS inverter circuitry so as to shift its threshold voltage in a direction to cause the duty cycle of the output signals to equal the duty cycle of the input signals. An average filter... | 08/10/1993 |
| 5228050 | Integrated multiple-wavelength laser array A monolithically integrated multiple-wavelength laser structure includes an array of lasing structures each having a cavity length chosen to correspond to a desired lasing wavelength. The array is suitable for use as a transmitter in a wavelength division... | 07/13/1993 |
| 5222091 | Structure for indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor A semiconductor laser having a high modulation bandwidth is made by utilizing an InGaAsP cap layer and an InGaAsP active layer of different crystal structure. Channels are anisotropically etched through the cap, cladding and active layers and partially th... | 06/22/1993 |
| 5192696 | Field effect transistor and method of fabricating A junction field effect transistor, specifically a static induction transistor. The N-type source regions are formed as two zones. First, relatively lightly doped first zones are formed by ion-implanting doping material relatively deeply into the semicond... | 03/09/1993 |
| 5192699 | Method of fabricating field effect transistors Method of fabricating a junction field effect transistor employing self-alignment techniques. The active regions of the device are defined by a relatively thin thermally-grown isolating silicon oxide layer at the surface of a silicon body. After the activ... | 03/09/1993 |
| 5182782 | Waferboard structure and method of fabricating A waferboard assembly incorporates mechanical registration features into a substrate platform to facilitate the passive alignment of lasers integrated on a chip to fibers in integral contact with the substrate. The waferboard includes two front pedestal s... | 01/26/1993 |
| 5175740 | Semiconductor laser and method of fabricating same A ridge-waveguide laser is fabricated by epitaxially growing a GaAs-based heterostructure, disposing an AlAs etch stop layer on the heterostructure, disposing epitaxial layers on the etch stop layer, and etching the heterostructure to form the laser where... | 12/29/1992 |
| 5173959 | Method and apparatus for assembling a fiber array A method and apparatus is disclosed for assembling an array of optical fibers in a substrate. The method comprises forming a series of parallel V-shaped grooves in the top surface of the substrate placing the substrate on a base plate positioning an upper... | 12/22/1992 |
| 5170160 | Broadband tree switch architecture for reducing pulse width narrowing and power dissipation A broadband space tree-switch matrix establishes a desired switching path by sensitizing only the sequence of logic gates defined by the desired path such that only these sensitized logic gates are operable to undergo switching and thereby permit transmis... | 12/08/1992 |
| 5163113 | Laser-to-fiber coupling apparatus An apparatus for coupling light from a laser chip into an untreated, unetched optical fiber includes a mounting block to which is attached the chip, and a substrate carrier attached to the block and having a channel space extending axially through the sub... | 11/10/1992 |
| 5163108 | Method and device for passive alignment of diode lasers and optical fibers A method of passively aligning optical receiving elements such as fibers to the active elements of a light generating chip includes the steps of forming two front and one side pedestal structures on the surface of a substrate body, defining a vertical sid... | 11/10/1992 |
| 5144671 | Method for reducing the search complexity in analysis-by-synthesis coding A method of encoding speech includes a limited search of a tree-code excitation codebook with a closed loop gain calculation for each test path under consideration. The gain calculation occurs when minimizing an error distance measurement between a synthe... | 09/01/1992 |
| 5126805 | Junction field effect transistor with SiGe contact regions A junction field effect transistor, specifically a static induction transistor. Prior to metallization a thin layer of germanium is placed over the exposed silicon of the source and gate regions. The germanium is intermixed with the underlying silicon to ... | 06/30/1992 |
| 5121457 | Method for coupling laser array to optical fiber array A method for coupling light from one or more light-emitting devices into corresponding optical fibers includes placing the light-emitting devices on the top surface of a substrate and forming, by photolithographical means, on the top surface of said subst... | 06/09/1992 |
| 5111254 | Floating gate array transistors A junction field effect transistor having an array of electrically floating gate elements located between the control gate and the drain in the path of current flow from the source to the drain. As the drain voltage increases the depletion zone of the con... | 05/05/1992 |
| 5106770 | Method of manufacturing semiconductor devices In the fabrication of a junction field effect transistor, specifically a static induction transistor, an epitaxial layer of high resistivity N-type silicon is grown on a substrate of low resistivity N-type silicon. A plurality of elongated parallel groove... | 04/21/1992 |
| 5098862 | Method of making ohmic electrical contact to a matrix of semiconductor material Electrical ohmic contacts are made to a matrix of silicon having conductive rods embedded therein without making contact to any of the rods. Those rods which extend to the surface in the selected area of the matrix to be contacted are etched to form holes... | 03/24/1992 |
| 5093225 | Processing method for fabricating electrical contacts to mesa structures in semiconductor devices A semiconductor mesa structure is covered with a photoresist material in a localized flooding manner such that the photoresist material is thinner on the top of the mesas and also at the upper most portion of the sidewalls than at the base of the mesa and... | 03/03/1992 |
| 5082799 | Method for fabricating indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor lasers A semiconductor laser having a high modulation bandwidth is made by utilizing an InGaAsP cap layer and an InGaAsP active layer of different crystal structure. Channels are anisotropically etched through the cap, cladding and active layers and partially th... | 01/21/1992 |
| 5077878 | Method and device for passive alignment of diode lasers and optical fibers A method of passively aligning optical receiving elements such as fibers to the active elements of a light generating chip includes the steps of forming two front and one side pedestal structures on the surface of a substrate body, defining a vertical sid... | 01/07/1992 |
| 5079616 | Semiconductor structure Heteroepitaxial semiconductor structures of, for example, GaAs on InP or Si. The epitaxially grown GaAs is in the form of individual spaced-apart islands having maximum dimensions in the plane of the surface of the substrate of no greater than 10 micromet... | 01/07/1992 |
| 5069561 | Monolithically integrated ridge waveguide semiconductor optical preamplifier A monolithically integrated optical preamplifier comprises an amplifying region, an optical detection region for detecting amplified light, and an optically transparent and electrically insulating isolation region interposed between the amplifying and opt... | 12/03/1991 |
| 5068723 | Frame or sub-frame rate adaptive vector quantizer for moving images An adaptive vector quantization scheme suitable for packet video adapts to the varying characteristics of the actual images sequence being compressed. A large code book is divided into two sections, having higher and lower priority, representing common ch... | 11/26/1991 |
| 5060285 | Hierarchical variable block size address-vector quantization using inter-block correlation A vector quantization based image compression technique which exploits inter-block correlation and layered addressing structure to form variable block sizes. Without introducing any quality degradation, when compared to the traditional vector quantization... | 10/22/1991 |
| 5058060 | Optical memory cell An optical memory cell constructed from an optical combiner, a 1×2 optical swtich and optical fibers. One input port of the optical combiner serves as the input to the memory cell. The output port of the optical combiner is connected to the input of the ... | 10/15/1991 |
| 5053843 | Thermally-stable structure for IMSM photodetectors on GaAs substrates An IMSM photodetector structure comprises a GaAs substrate, a buffer region grown on the substrate, an optically active absorbing layer of In0.42 Ga0.58 As grown on the absorbing layer. The buffer region includes in sequence a first ... | 10/01/1991 |
| 5049877 | Broadband switch matrix with non-linear cascading A broadband switching matrix having M×N crosspoint switches is arranged into a selected number of groups of vertically cascaded stages in which adjacent groups are interconnected with expansion stages. An input signal switched from row to column in a par... | 09/17/1991 |