Lockhart; H. W. - US Patent Attorneys and Agents

Attorney: Lockhart; H. W.

Number of patents: 31
Last date: April 10, 1984

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Number	Title	Issue Date
4441249	Semiconductor integrated circuit capacitor Polyoxide capacitors for semiconductor integrated circuits having oxide dielectric films of 500 Angstroms or less are fabricated using in-situ doped polysilicon layers to have electrical field breakdowns of from 6 to 9 MV/cm. The first polysilicon layer i...	04/10/1984
4384398	Elimination of silicon pyramids from epitaxial crystals of GaAs and GaAlAs The occurrence of pyramidal protrusions on the surface of GaAs and GaAlAs p-n junction wafers produced by a multislice liquid phase epitaxy process is avoided by slow cooling to a specified quenching temperature or below. The pyramidal protrusions are con...	05/24/1983
4336792	Solar heating freeze protection system A solar energy system for heating water is disclosed. The system comprises a closed piping circuit in which water is pumped through a heat exchanger and storage tank which are not exposed to freezing temperatures up through a solar collector which may be ...	06/29/1982
4331831	Package for semiconductor integrated circuits A plastic encapsulation of the chip carrier type for a semiconductor integrated circuit is described. The package includes a lead frame member formed from a continuous metal tape which permits reel-to-reel automatic processing. The lead frame member provi...	05/25/1982
4330683	Encapsulation for semiconductor device A semiconductor encapsulation of the chip carrier type has a collar-like protective housing member which encompasses the periphery of the chip carrier from which external lead members protrude. The protective housing member has a mating surface with a por...	05/18/1982
4323797	Reciprocal current circuit A circuit is provided in which the output current is the inverse, that is, the reciprocal, of the input current. The circuit comprises an input current branch and an output current branch, each branch including the emitter-collector electrodes of one of matchi...	04/06/1982
4296998	Encapsulated light source with coupled fiberguide A laser is coupled to an optical fiber in an hermetic encapsulation by locking a portion of the fiber near the laser in a body of solder. With the laser energized, the position of the optical fiber is adjusted within an aperture through the solder body to...	10/27/1981
4288841	Double cavity semiconductor chip carrier A semiconductor device including a double cavity semiconductor chip carrier 100 which comprises a multilayer ceramic sandwich structure having a pair of semiconductor chip receiving cavities in the opposite faces thereof. The package enables mounting and ...	09/08/1981
4251621	Selective metal etching of two gold alloys on common surface for semiconductor contacts Low resistance or ohmic contacts to p and n-type conductivity semiconductor material sometimes requires a different metal for each contact. Intermixing of these metals is undesirable so that special measures are necessary to form such contacts in close pr...	02/17/1981
4232440	Contact structure for light emitting device A contact structure to the light emitting surface 19 of a light emitting device 10 having an array of small distributed contacts 14 is made by selectively depositing a larger area bonding pad 15 over a portion of the distributed contacts. The small contac...	11/11/1980
4231809	Method of removing impurity metals from semiconductor devices A process is disclosed for gettering deleterious metal impurities, particularly the transition metals such as Cu, Fe, Co, Ni and Cr from silicon wafers by high temperature treatment for a comparatively short time in a hydrogen chloride vapor at low oxygen...	11/04/1980
4232328	Dielectrically-isolated integrated circuit complementary transistors for high voltage use Integrated circuit complementary transistors for high voltage switching applications are fabricated in separate dielectrically-isolated pockets (12), (14) of high resistivity silicon, supported in a conductive medium (11) such as polycrystalline silicon, ...	11/04/1980
4226648	Method of making a hyperabrupt varactor diode utilizing molecular beam epitaxy A semiconductor varactor diode of the hyperabrupt junction type, typically having a PNN+ configuration, is disclosed. The impurity concentration in the intermediate N-type portion is grown in by the molecular beam epitaxy process to provide the hyperabrup...	10/07/1980
4214359	MOS Devices having buried terminal zones under local oxide regions A method of making MOS devices, primarily in integrated circuit form, is disclosed. Device areas first are defined on a silicon semiconductor chip, typically by means of a silicon nitride pattern 13A-13B. This pattern then is used to locate impurity intro...	07/29/1980
4204218	Support structure for thin semiconductor wafer Semiconductor chips for certain types of devices must be extremely thin, typically less than two mils in thickness. They are therefore extremely fragile and difficult to handle. Such chips are provided with increased strength and rigidity by the addition ...	05/20/1980
4167031	Heat dissipating assembly for semiconductor devices A heat conducting and radiating arrangement for an electronic assembly, which includes heat generating semiconductor devices, comprises a thermally conductive holder member 20 for the semiconductor device 13 which is conveniently clamped to a large area, ...	09/04/1979
4156246	Combined ohmic and Schottky output transistors for logic circuit A silicon semiconductor integrated logic circuit of the injection or merged transistor logic type has output contacts in which ohmic and Schottky barrier portions are combined. A portion of the surface region of each output transistor collector is convert...	05/22/1979
4132907	Full wave rectifier circuit A single-ended input full wave rectifier circuit is disclosed comprising a complementary common emitter amplifier configuration. An input signal comprising complementary pulses, such as a sine wave, causes conduction alternately in the collector circuits ...	01/02/1979
4113547	Formation of epitaxial layers on substrate wafers utilizing an inert heat radiation ring to promote uniform heating A method is described for growing epitaxial layers of material on monocrystalline substrates, chiefly silicon, which are substantially free of slip dislocations. The method involves placing an encircling ring of inert, heat resistant material around the r...	09/12/1978
4111783	Triode sputtering system A triode sputtering system comprises a plasma confining enclosure including a cathode at one end, an anode at the other, and a central plasma supporting portion. Contamination caused by unwanted sputtering of the surfaces of the confining apparatus is sub...	09/05/1978
4087900	Fabrication of semiconductor integrated circuit structure including injection logic configuration compatible with complementary bipolar transistors utilizing simultaneous formation of device regions A version of integrated injection logic is disclosed in which both the switching transistor and the current source transistor are of the vertical type and in which the logic gates are fabricated in the same semiconductor integrated chip with linear circui...	05/09/1978
4087647	Circuit for supplying direct current to telephone station sets A local battery feed circuit for telephone station sets comprises two half circuit portions substantially symmetric about an imaginary line midway between the TIP and RING telephone lines. Each half circuit includes a current drive amplifier including a p...	05/02/1978
4033027	Dividing metal plated semiconductor wafers A process for fabricating semiconductor devices is disclosed. In particular, a method for separating semiconductor wafers into device chips includes the step of forming a photoresist grid pattern underlying the metallization layer on the back face of the ...	07/05/1977
4007384	Noninverting current-mode logic gate A high speed bipolar noninverting current-mode logic AND gate is the basic building block for a current-mode logic family. The AND gate comprises a current steering differential pair of transistors, a pair of dual emitter input transistors, a dual emitter...	02/08/1977
3990925	Removal of projections on epitaxial layers A method for removing projections from the surface of epitaxially-deposited semiconductor layers is described. These projections can adversely affect the results of photolithographic processing. The method comprises forming an oxide layer on the surface a...	11/09/1976
3977566	Semiconductor wafer handling apparatus Semiconductor wafer handling apparatus comprising a wafer feed machine, a dispensing adapter, and a collecting adapter is disclosed. The wafer feed machine is adapted for the transfer of a plurality of semiconductor wafers from or to a wafer cassette and ...	08/31/1976
3977955	Method for cathodic sputtering including suppressing temperature rise In a vacuum system for subjecting a workpiece such as a semiconductor wafer to a beam of energy, for example as in cathodic sputtering, temperature rise of the workpiece is inhibited by mounting the workpiece in minimal thermal contact with the support st...	08/31/1976
3974518	Encapsulation for high frequency semiconductor device An hermetic sealed microwave diode package having high thermal conductivity and very low parasitic impedances. The diode chip is mounted upon a diamond member embedded in a copper base member so that the diamond mounting surface and the copper base member...	08/10/1976
3947952	Method of encapsulating beam lead semiconductor devices Plastic encapsulation in the form of a thin film of silicone resin is provided on the active surface of beam lead semiconductor chips by a multistep process. An etchable organic film, for example, of silicone resin, is applied to the chips while they are ...	04/06/1976
3943047	Selective removal of material by sputter etching During the removal of material selectively, by the sputter etching of the surface of a semiconductor wafer, the wafer is moved so as to produce a continuously varying angle of incidence between the ion beam and the wafer surface. There is also provided a ...	03/09/1976
3932232	Suppression of X-ray radiation during sputter-etching An attenuating member comprising a plurality of passages like a tube nest, is positioned between the electrodes of a diode sputter-etching system and close or next to the anode. The passages of the attenuating member are parallel to the direct path betwee...	01/13/1976

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Attorney: Lockhart; H. W.