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Patent No. 6351867

Body squeegee

A hand wearable body squeegee comprising a glove portion, a concave squeegee band, and a linear squeegee band.

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Attorney: Lin; Chih-Sheng (Jason)


Number of patents: 7
Last date: June 15, 2010

NumberTitleIssue Date
7736405Chemical mechanical polishing compositions for copper and associated materials and method of using same
A CMP composition containing a rheology agent, e.g., in combination with oxidizing agent, chelating agent, inhibiting agent, abrasive and solvent. Such CMP composition advantageously increases the materials selectivity in the CMP process and is useful for polishing ...
06/15/2010
7605113Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The fo...
10/20/2009
7534752Post plasma ashing wafer cleaning formulation
A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising at least one organic chelating agent and at least one polar solvent, wherein the chelating agent and polar solvent are in sufficient amounts to effectively ...
05/19/2009
7365045Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
A cleaning solution is provided for cleaning metal-containing microelectronic substrates, particularly for post etch, via formation and post CMP cleaning. The cleaning solution consists of a quaternary ammonium hydroxide, an organic amine, and water. A preferred cle...
04/29/2008
7361603Passivative chemical mechanical polishing composition for copper film planarization
A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent and a method of use. Such CMP composition may be diluted during the CMP polish to minimize the occurrence of dishing or other adverse plan...
04/22/2008
7335239Chemical mechanical planarization pad
A Chemical Mechanical Planarization (CMP) Pad. The CMP pad may be hydrophobic due to the incorporation of metal complexing agents. The CMP pad substantially retaining planarazation characteristics throughout planarization applications. Shearing, hardness, wearing, w...
02/26/2008
7326673Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
Chemical formulations and methods for removing unwanted material, such as unexposed photoresist, metal oxides, CMP residue, and the like, from semiconductor wafers or other substrates. The formulations utilize a supercritical fluid-based cleaning composition, which ...
02/05/2008
 
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