Law Offices of Charles Guenzer - US Patent Attorneys and Agents

Attorney: Law Offices of Charles Guenzer

Number of patents: 25
Last date: March 15, 2011

Number	Title	Issue Date
7906348	Method of feed forward control of scanned rapid thermal processing A thermal processing system and method including scanning a line beam of intense radiation in a direction transverse to the line direction for thermally processing a wafer with a localized effectively pulsed beam of radiant energy. The thickness of the wafer is two-...	03/15/2011
7846310	Encapsulated and water cooled electromagnet array A electromagnet array structure including multiple electromagnetic coils captured in a rigid encapsulant, for example, of cured epoxy resin, to form a unitary free-standing structure which can be placed around the walls of a plasma processing chamber. A liquid cooli...	12/07/2010
7807579	Hydrogen ashing enhanced with water vapor and diluent gas An oxygen-free hydrogen plasma ashing process particularly useful for low-k dielectric materials based on hydrogenated silicon oxycarbide materials. The main ashing step includes exposing a previously etched dielectric layer to a plasma of hydrogen and optional nitr...	10/05/2010
7807030	Small scanned magentron A small magnet assembly having a magnet assembly of area less than 10% of the target area, is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and ...	10/05/2010
7790604	Krypton sputtering of thin tungsten layer for integrated circuits A method of depositing a bilayer of tungsten over tungsten nitride by a plasma sputtering process in which krypton is used as the sputter working gas during the tungsten deposition. Argon may be used as the sputtering working gas during the reactive sputtering depos...	09/07/2010
7789331	Jet mill producing fine silicon powder A method of jet milling silicon powder in which silicon pellets are fed into a jet mill producing a gas vortex in which the pellets are entrained and pulverized by collisions with each other or walls of the milling chamber. The chamber walls are advantageously forme...	09/07/2010
7772134	Method of annealing using two wavelengths of continuous wave laser radiation A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the...	08/10/2010
7767064	Position controlled dual magnetron A dual magnetron for plasma sputtering including a source magnetron and an auxiliary magnetron, each of which rotate about the center of the target at respective radii. The positions of the magnetron can be moved in complementary radial directions between sputter de...	08/03/2010
7754610	Process for etching tungsten silicide overlying polysilicon particularly in a flash memory A method of plasma etching tungsten silicide over polysilicon particularly useful in fabricating flash memory having both a densely packed area and an open (iso) area requiring a long over etch due to microloading. Wafer biasing is decreased in the over etch. The pr...	07/13/2010
7749361	Multi-component doping of copper seed layer A method of sputtering a copper seed layer and the target used therewith. The copper included in the sputtering target includes a first dopant reactive with copper and a second dopant unreactive with copper. Examples of the first dopant include Ti, Mg, and Al. Examp...	07/06/2010
7700376	Edge temperature compensation in thermal processing particularly useful for SOI wafers A retuning process particularly useful with an Ar/H2 smoothing anneal by rapid thermal processing (RTP) of a silicon-on-insulator (SOI) wafer performed after cleavage. The smoothing anneal or other process is optimized including a radial temperature profi...	04/20/2010
7695567	Water vapor passivation of a wall facing a plasma A chamber passivation method particularly useful for hydrogen plasma cleaning of low-k dielectrics prior to coating a barrier layer into a via hole with hydrogen radicals are provided from a remote plasma source. For each wafer, the chamber is passivated with water ...	04/13/2010
7686928	Pressure switched dual magnetron A dual magnetron for plasma sputtering in which two distinctly different magnetrons are mounted on a common plate rotating about a central axis in back of a target. At least one of the magnetrons is switched on and off by changes in chamber pressure or target power ...	03/30/2010
7686926	Multi-step process for forming a metal barrier in a sputter reactor A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber ...	03/30/2010
7674360	Mechanism for varying the spacing between sputter magnetron and target A lift mechanism for and a corresponding use of a magnetron in a plasma sputter reactor. A magnetron rotating about the target axis is controllably lifted away from the back of the target to compensate for sputter erosion, thereby maintaining a constant magnetic fie...	03/09/2010
7618521	Split magnet ring on a magnetron sputter chamber A split magnet ring, particularly useful in a magnetron plasma reactor sputter depositing tantalum or tungsten or other barrier metal into a via and also resputter etching the deposited material from the bottom of the via onto the via sidewalls. The magnet ring incl...	11/17/2009
7595208	Method of laser annealing using two wavelengths of radiation A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the...	09/29/2009
7569125	Shields usable with an inductively coupled plasma reactor A one-piece inner shield usable in a plasma sputter reactor and extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil used in exciting...	08/04/2009
7561015	Magnet secured in a two part shell A magnet encapsulated within a canister formed from two cans into a laminated structure particularly useful in plasma processing reactors. Each can includes an end wall and a cylindrical sidewall. One can additionally includes an annular lip that slidably fits outsi...	07/14/2009
7432210	Process to open carbon based hardmask A method of opening a carbon-based hardmask layer composed of amorphous carbon containing preferably at least 60% carbon and between 10 and 40% hydrogen. The hardmask is opened by plasma etching using an etching gas composed of H2, N2, and CO. ...	10/07/2008
7378002	Aluminum sputtering while biasing wafer An aluminum sputtering process including RF biasing the wafer and a two-step aluminum fill process and apparatus used therefor to fill aluminum into a narrow via hole by sputtering under two distinctly different conditions, preferably in two different plasma sputter...	05/27/2008
7321140	Magnetron sputtered metallization of a nickel silicon alloy, especially useful as solder bump barrier A nickel silicon alloy barrier layer formed between a metal bonding pad on an integrated circuit and a tin-based solder ball, for example, a lead-free solder. The nickel silicon alloy contains at least 2 wt % silicon and preferably less than 20 wt %. An adhesion lay...	01/22/2008
7294245	Cover ring and shield supporting a wafer ring in a plasma reactor A magnetic dipole ring assembly positioned inside a vacuum chamber and around a wafer being sputter deposited with a ferromagnetic material such as NiFe or other magnetic materials so that the material is deposited with a predetermined magnetization direction in the...	11/13/2007
7122125	Controlled polymerization on plasma reactor wall An integrated etch process, for example as used for etching an anti-reflection layer and an underlying aluminum layer, in which the chamber wall polymerization is controlled by coating polymer onto the sidewall by a plasma deposition process prior to inserting the w...	10/17/2006
6398929	Plasma reactor and shields generating self-ionized plasma for sputtering A DC magnetron sputter reactor for sputtering copper, its method of use, and shields and other parts promoting self-ionized plasma (SIP) sputtering, preferably at pressures below 5 milliTorr, preferably below 1 milliTorr. Also, a method of coating copper ...	06/04/2002

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Attorney: Law Offices of Charles Guenzer