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| Number | Title | Issue Date |
| 8162723 | Method of polishing a tungsten carbide surface The invention is directed to a method for polishing a surface comprising tungsten carbide, comprising contacting a surface comprising tungsten carbide with an oxidizing agent, a polishing component, and a liquid carrier, and abrading at least a portion of the surfac... | 04/24/2012 |
| 8062096 | Use of CMP for aluminum mirror and solar cell fabrication The invention is directed to a method of polishing a surface of a substrate comprising aluminum, comprising contacting a surface of the substrate with a polishing pad and a polishing composition comprising an abrasive, an agent that oxidizes aluminum, and a liquid c... | 11/22/2011 |
| 7922926 | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks The invention provides a chemical-mechanical polishing composition consisting essentially of flumed alumina, alpha alumina, silica, a nonionic surfactant, an additive compound selected from the group consisting of glycine, alanine, iminodiacetic acid, and maleic aci... | 04/12/2011 |
| 7846842 | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned poli... | 12/07/2010 |
| 7875469 | Method of operating and process for fabricating an electron source A method of operating and process for fabricating an electron source. A conductive rod is covered by an insulating layer, by dipping the rod in an insulation solution, for example. The rod is then covered by a field emitter material to form a layered conductive rod.... | 01/25/2011 |
| 7837888 | Composition and method for damascene CMP The invention provides a method of chemically-mechanically polishing a substrate having at least one feature defined thereon, wherein the feature has at least one dimension with a size W, with a chemical-mechanical polishing composition. The polishing composition co... | 11/23/2010 |
| 7803711 | Low pH barrier slurry based on titanium dioxide The invention provides a method of chemically-mechanically polishing a substrate. A substrate is contacted with a polishing pad and a polishing composition comprising an abrasive consisting of (A) particles consisting of titanium dioxide having a rutile structure an... | 09/28/2010 |
| 7686994 | Method of preparing a conductive film The invention provides a method for producing a conductive film that generates an electric current via field emission of electrons, which method comprises incorporating an electrically conductive material into a thermoplastic polymer. The invention also provides a c... | 03/30/2010 |
| 7582127 | Polishing composition for a tungsten-containing substrate The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, co... | 09/01/2009 |
| 7563383 | CMP composition with a polymer additive for polishing noble metals The invention provides a method of polishing a substrate comprising contacting a substrate comprising a noble metal on a surface of the substrate with a chemical-mechanical polishing system comprising (a) a polishing component selected from the group consisting of a... | 07/21/2009 |
| 7504044 | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned poli... | 03/17/2009 |
| 7501346 | Gallium and chromium ions for oxide rate enhancement The invention provides a chemical-mechanical polishing composition comprising silica, a compound in an amount sufficient to provide about 0.2 mM to about 10 mM of a metal cation selected from the group consisting of gallium (III), chromium (II), and chromium (III), ... | 03/10/2009 |
| 7497938 | Tribo-chronoamperometry as a tool for CMP application The invention provides a method of determining at least one electrochemical characteristic of a chemical-mechanical or electrochemical-mechanical polishing system comprising application of a potential between a polishing substrate and an electrode to generate a curr... | 03/03/2009 |
| 7485241 | Chemical-mechanical polishing composition and method for using the same The invention provides a chemical-mechanical polishing composition comprising: (a) fumed silica particles, (b) about 5×10−3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontiu... | 02/03/2009 |
| 7435165 | Transparent microporous materials for CMP The invention is directed to a chemical-mechanical polishing pad substrate comprising a porous material having an average pore size of about 0.01 microns to about 1 micron. The polishing pad substrate has a light transmittance of about 10% or more at at least one wa... | 10/14/2008 |
| 7311856 | Polymeric inhibitors for enhanced planarization The invention provides a chemical-mechanical polishing system comprising a polishing component, a surfactant, and a liquid carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the polishing system. ... | 12/25/2007 |
| 7288021 | Chemical-mechanical polishing of metals in an oxidized form The invention provides a method for polishing a substrate comprising a metal in an oxidized form, the method comprising the steps of: (a) providing a substrate comprising a metal in an oxidized form, (b) contacting a portion of the substrate with a chemical-mechanic... | 10/30/2007 |
| 7265055 | CMP of copper/ruthenium substrates The invention provides a method of chemically-mechanically polishing a substrate. A substrate comprising ruthenium and copper is contacted with a chemical-mechanical polishing system comprising a polishing component, hydrogen peroxide, an organic acid, at least one ... | 09/04/2007 |
