Did You Know...
...that one person who claimed to be the inventor of the television is Russian emigre Vladimir Zworykin? In 1929 David Sarnoff, founder of RCA, asked Zworykin what it would take to develop TV for commercial use. He said: a year and a half and $100,000. In reality, it took 20 years and $50 million! Before his death in 1982 at the age of 92, Zworykin said of his invention: "The technique is wonderful. It is beyond my expectations. But the programs! I would never let my children even come close to this thing."
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| Number | Title | Issue Date |
| 6441449 | MEMS variable capacitor with stabilized electrostatic drive and method therefor A micro electro-mechanical systems device having variable capacitance is controllable over the full dynamic range and not subject to the "snap effect" common in the prior art. The device features an electrostatic driver (120) having a driver capacitor of ... | 08/27/2002 |
| 6076149 | Programmable logic device using a two bit security scheme to prevent unauthorized access For a data processing device having a main memory comprised of a non-volatile memory and a CPU, memory protection and security are ensured for its programs and so forth. An auxiliary memory for storing security bit data is provided, for example, in an EPR... | 06/13/2000 |
| 6075409 | Demodulation method and arrangement A method for demodulating a radio frequency signal having a frequency, by oscillating a demodulator at a frequency different from the signal frequency, and measuring a DC offset value at this different frequency, the DC offset value being associated with ... | 06/13/2000 |
| 5811631 | Apparatus and method for decomposition of chemical compounds using a self-supporting member An apparatus for and method of decomposing a chemical compound, which may be an environmentally undesirable material, is accomplished by impinging a flow of the chemical compound on a heated member. Various embodiments are possible, including having the m... | 09/22/1998 |
| 5720927 | Apparatus for decomposition of chemical compounds An apparatus for decomposing a chemical compound, which may be an environmentally undesirable material, is accomplished by impinging a flow of the chemical compound on a heated member. Various embodiments are possible, including having the member have a p... | 02/24/1998 |
| 5690877 | Method of processing a semiconductor chip package A method of removing dam bars (15) from leads (17) of a semiconductor chip package (10) is performed by first breaking a bond between the dam bars (15) and excess mold compound (12) from a mold compound (11). The bond is broken by slight movement of the d... | 11/25/1997 |
| 5663476 | Apparatus and method for decomposition of chemical compounds by increasing residence time of a chemical compound in a reaction chamber An apparatus for and method of decomposing a chemical compound, which may be an environmentally undesirable material, is accomplished by impinging a flow of the chemical compound on a heated member. Various embodiments are possible, including having the m... | 09/02/1997 |
| 5631187 | Method for making semiconductor device having high energy sustaining capability and a temperature compensated sustaining voltage A semiconductor device having an improved protection scheme and a temperature compensated sustaining voltage is provided by integrating a plurality of temperature compensated voltage reference diodes between the drain and the gate of the semiconductor dev... | 05/20/1997 |
| 5619064 | III-V semiconductor gate structure and method of manufacture A manufacturable III-V semiconductor gate structure having small geometries is fabricated. A silicon nitride layer is formed on a III-V semiconductor material and a dielectric layer comprised of aluminum is formed on the silicon nitride layer. Another die... | 04/08/1997 |
| 5605615 | Method and apparatus for plating metals A method and apparatus for plating metals which delivers a voltage pulse with the possibility of a widely varying current magnitude characteristic to a plating electrode and an object having a large electrical reactance in terms of a parallel resistance a... | 02/25/1997 |
| 5563437 | Semiconductor device having a large sense voltage A large sense voltage is produced by the semiconductor device of the present invention. The semiconductor device, utilizing current mirror techniques, is comprised of a power MOSFET having a plurality of power cells and a plurality of sense cells formed i... | 10/08/1996 |
| 5541122 | Method of fabricating an insulated-gate bipolar transistor A method of fabricating a fast-switching, low-R(on) insulated-gate bipolar transistor including providing an N-type semiconductor wafer with a planar surface, forming a thin heavily-doped layer, having a concentration in the range of 3×1017 /c... | 07/30/1996 |
| 5528076 | Leadframe having metal impregnated silicon carbide mounting area A leadframe (10) formed by a method including providing a preform of silicon carbide, placing the preform in a mold, injecting a liquefied metal, such as aluminum, into the mold to fill the mold and infiltrate the preform, using heat and pressure. The mol... | 06/18/1996 |
| 5515467 | Optical fiber assembly for connecting photonic devices to a fiber optic cable A connector affixed to the end of a cable of optical fibers and having alignment pins extending axially in parallel with the cable and beyond the end thereof. A substrate with alignment holes and light transmitting openings therethrough in axial alignment... | 05/07/1996 |
| 5512518 | Method of manufacture of multilayer dielectric on a III-V substrate A manufacturable III-V semiconductor structure having small geometries is fabricated. A silicon nitride layer is formed on a III-V semiconductor material and a dielectric layer comprised of aluminum is formed on the silicon nitride layer. Another dielectr... | 04/30/1996 |
| 5512499 | Method of making symmetrical and asymmetrical MESFETS A method of fabricating a MESFET is comprised of providing a semiconductor material having a channel region formed therein, forming a gate on the semiconductor material over the channel region, forming a spacer adjacent a first portion of the gate dispose... | 04/30/1996 |
| 5510649 | Ceramic semiconductor package having varying conductive bonds A semiconductor chip package is manufactured comprising a heatsink bonded to an aluminum nitride insulative layer by a thermally conductive and electrically nonconductive epoxy. The aluminum nitride insulative layer is bonded to several portions of a lead... | 04/23/1996 |
| 5500377 | Method of making surge suppressor switching device A semiconductor device is fabricated which has reduced power dissipation when the device is turned on and runs cooler in surge suppressor applications. This result is achieved by fabricating a device where the breakdown action takes place preferentially u... | 03/19/1996 |
| 5498883 | Superluminescent edge emitting device with apparent vertical light emission and method of making A superluminescent edge emitting device is fabricated to have apparent vertical light emission. The superluminescent device is comprised of a semiconductor supporting structure having a major surface. A light emitting portion is formed above a first porti... | 03/12/1996 |
| 5484740 | Method of manufacturing a III-V semiconductor gate structure A manufacturable III-V semiconductor gate structure having small geometries is fabricated. A silicon nitride layer is formed on a III-V semiconductor material and a dielectric layer comprised of aluminum is formed on the silicon nitride layer. Another die... | 01/16/1996 |
| 5478437 | Selective processing using a hydrocarbon and hydrogen A layer is plasma etched or deposited with a gaseous mixture of a hydrocarbon, hydrogen and a noble gas. A cathode DC bias of greater than 600 V is used. This cathode DC bias allows for selectively etching a III-V material over an aluminum containing laye... | 12/26/1995 |
| 5473192 | Unitary silicon die module A semiconductor chip module is formed by providing at least one semiconductor chip and a semiconductor substrate and bonding the semiconductor chip to the semiconductor substrate without the use of an epoxy or a metallic layer to create a bond between the... | 12/05/1995 |
| 5473716 | Fiber bundle interconnect and method of making same An interconnect for coupling optical fibers and photonic devices. This interconnect is comprised of a fiber bundle formed of a plurality of optical fibers, a plurality of photonic devices, and a connector assembly. The connector assembly is comprised of a... | 12/05/1995 |
| 5449628 | Method of making semiconductor device having a short gate length A semiconductor device having a channel region having a first and a second portion. The first and second portions of the channel region are designed so that only a small portion is substantially depleted during operation. Thus, a semiconductor device havi... | 09/12/1995 |
| 5428861 | Method and apparatus for cleaning a processing tube A method for cleaning a processing tube is performed by an apparatus providing a vacuum and a flow of an inert gas. The flow of the inert gas dislodges particles from the tube surface and assists in carrying the particles to the vacuum. The vacuum is cent... | 07/04/1995 |
| 5430327 | Ohmic contact for III-V semiconductor materials An ohmic contact to a III-V semiconductor material is fabricated. First, a III-V semiconductor material is provided. Source/drain regions are then formed in the III-V semiconductor material. On the III-V semiconductor material, a contact system is formed ... | 07/04/1995 |
| 5394007 | Isolated well and method of making A junction isolated P-well is formed for high performance BiCMOS. Two dopants of opposite conductivity types are implanted and co-diffused inside an annular N-type region to form a narrow N-type buried layer positioned between two P-type regions. N-type b... | 02/28/1995 |
| 5385869 | Semiconductor chip bonded to a substrate and method of making A semiconductor chip is flip chip bonded to a substrate having a cavity or a through hole formed therein. The cavity or through hole is preferably large enough to substantially remove the narrow gap which is formed between the portion of the substrate whi... | 01/31/1995 |
| 5384273 | Method of making a semiconductor device having a short gate length A semiconductor device having a short gate length is fabricated. The short gate length is obtained by utilizing the fact that an unannealed silicon nitride can be isotropically etched while not etching an annealed silicon nitride layer. The method compris... | 01/24/1995 |
| 5376565 | Fabrication of lateral bipolar transistor A process for forming a lateral bipolar transistor wherein apertures for forming a current electrode (collector or emitter) region, a base region and an isolation region are all formed simultaneously so that they are automatically aligned. Also, a mask ar... | 12/27/1994 |
| 5358895 | Low temperature silicon epitaxy with germanium doping A non-strained epitaxial layer is formed to have a small transition width and a low amount or no amount of oxygen incorporated therein. During the formation of non-strained epitaxial layer, a germanium source gas is introduced. Germanium reacts with water... | 10/25/1994 |
| 5355306 | Alignment system and method of alignment by symmetrical and asymmetrical analysis An alignment signal is analyzed asymmetrically using any means of artificial intelligence or similar logic to apply empirical or theoretical offsets to signal position calculations based on the unique signal shapes of the different signals collected. A da... | 10/11/1994 |
| 5352926 | Flip chip package and method of making A portion of a semiconductor die is rigidly flip chip bonded to a conductive base plate and portion is bonded to a flexible dielectric material to take advantage of the benefits of flip chip packaging while at the same time allowing for heat to be dissipa... | 10/04/1994 |
| 5346848 | Method of bonding silicon and III-V semiconductor materials A silicon wafer and a III-V semiconductor wafer are bonded together through a bonding interlayer which is deposited on the III-V semiconductor wafer. By forming the bonding interlayer on the III-V semiconductor wafer, rather than the silicon wafer, the bo... | 09/13/1994 |
| 5331658 | Vertical cavity surface emitting laser and sensor A vertical cavity surface emitting laser (VCSEL) having sensing capabilities is fabricated by forming a layer having the capability to change the threshold current of the VCSEL. This can be accomplished by forming a deformable membrane or a cantilevered b... | 07/19/1994 |
| 5326453 | Method and solution for electrodeposition of a dense, reflective tin or tin-lead alloy New formulations for the electrodeposition of a dense, reflective tin or tin-lead alloy on a cathode have been developed. Such electrodeposition solutions are partially comprised of an additive which is comprised of at least one nonionic surfactant which ... | 07/05/1994 |
| 5310689 | Method of forming a SIMOX structure A SIMOX structure having a reduced number of defects is formed by performing a two step anneal. In one embodiment, a conventional anneal is followed by an H2 /Si anneal. The conventional anneal first densifies the buried oxide layer in order to... | 05/10/1994 |
| 5307981 | Method and apparatus for optimizing bond tool pressure distribution Bond tool pressure distribution is optimized by a method and apparatus having a device having a first surface which permits inclination of the first surface in at least one direction, wherein the device is in a locked position. A first bonding arrangement... | 05/03/1994 |
| 5300187 | Method of removing contaminants Contaminants are removed from a semiconductor material by heating the semiconductor material to temperature within the range of a minimum temperature where a halogen compound will decompose to halogen atoms without the use of ultraviolet irradiation and r... | 04/05/1994 |
| 5281839 | Semiconductor device having a short gate length A semiconductor device having a channel region having a first and a second portion. The first and second portions of the channel region are designed so that only a small portion is substantially depleted during operation. Thus, a semiconductor device havi... | 01/25/1994 |
