Bizarre Patents
Dining Table Having Integral Dishwasher
A space-saving dishwasher, which may be installed within a counter top or table, having a dish-carrying rack that is vertically shiftable through the open top of the dishwasher for facilitating loading and unloading of the dishes.
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| Number | Title | Issue Date |
| 6274517 | Method of fabricating an improved spacer A method of fabricating an improved spacer comprising the steps of providing a semiconductor substrate that has a gate already formed thereon. A PNO spacer is formed on a sidewall of the gate. The method of forming the PNO spacer comprises first forming a... | 08/14/2001 |
| 6274468 | Method of manufacturing borderless contact A method of manufacturing borderless contact can compensate for misalignment that occurs during formation of the contacts. First, a substrate with a gate structure on it is provided. The substrate also has source/drain regions. Spacers are formed on the s... | 08/14/2001 |
| 6271581 | Semiconductor package structure having universal lead frame and heat sink A semiconductor package structure having universal lead frame and heat sink comprises a chip, a lead frame, a heat sink, a bonding wire, and a molding compound. The leads of the lead frame approaches toward the center portion of the lead frame in order to... | 08/07/2001 |
| 6271116 | Method of fabricating interconnects A method for fabricating interconnects is described. A semiconductor substrate having metal lines is provided. A liner layer is formed over the substrate, and then a dielectric layer is formed between the metal lines, wherein the dielectric layer has a lo... | 08/07/2001 |
| 6272645 | Method and control circuit for waking up a computer system from standby mode An operation mode for waking up a system predetermined by a user is stored before the system is in standby mode. After the system is in standby mode, the peripherals and the peripheral controller are separated to prevent the peripheral controller from rec... | 08/07/2001 |
| 6268264 | Method of forming shallow trench isolation A method of fabricating a shallow trench isolation. A trench is formed in a substrate. An insulation plug is formed to fill the trench. The trench has an exposed upper portion above the substrate. A silicon spacer is formed on a side wall of the exposed u... | 07/31/2001 |
| 6269430 | Method for controlling a process of writing data sent by a central processing unit to a memory by using a central processing unit interface A method for a CPU interface to control a writing process that writes data sent from a CPU to a memory. The CPU interface controls the writing process through steps mainly including receiving a write request and data from a CPU, sending a dummy request to... | 07/31/2001 |
| 6265298 | Method for forming inter-metal dielectrics An improved method for forming inter-metal dielectrics (IMD) over a semiconductor substrate is provided, wherein a conductive line is formed thereon. A first dielectric layer is formed over the conductive line. A second dielectric layer is formed on the f... | 07/24/2001 |
| 6265892 | Low noise output buffer A low noise output buffer to simultaneously reduce switching noise and output signal ringing for output ringing and maintain DC current. A temporary and a steady-state output buffers are supplied by a buffer voltage source and an internal circuit voltage ... | 07/24/2001 |
| 6264862 | Method for manufacturing a plug An apparatus for manufacturing a plug and the manufacturing method. The method includes the following steps. A baseplate located in the bottom of a closed printing chamber is provided. A printed circuit board and a stencil are mounted on the baseplate in ... | 07/24/2001 |
| 6262475 | Lead frame with heat slug The addition of a heat slug to a lead frame establishes a heat conduction path from a silicon chip on the lead frame to the heat slug. Hence, when a semiconductor package that encloses the lead frame and the silicon chip is formed, heat produced by the si... | 07/17/2001 |
| 6261921 | Method of forming shallow trench isolation structure A method of forming a shallow trench isolation structure is described. A mask layer and a photoresist layer with an opening are formed on a substrate in sequence. The photoresist layer serves as an etching mask, and then a portion of the mask layer and a ... | 07/17/2001 |
| 6261171 | Movable multi-function maintenance apparatus A movable multi-function maintenance apparatus. A first airtight chamber is formed on the second airtight chamber. An exhaust apparatus is placed in a base under the first airtight chamber in order to exhaust first and the second airtight chambers. Thus, ... | 07/17/2001 |
| 6259797 | Metal base design for a speaker A metal base assembly for speaker that combines with a magnetic circuit to produce a fluctuating magnetic field which drives an acoustic diaphragm into vibration to produce a warning alarm. The metal base assembly comprises a top pad, a middle pad, a bott... | 07/10/2001 |
| 6258712 | Method for forming a borderless contact A method of a self-alignment process to enhance the yield of borderless contact is described. The method provides a two-step, selective etching process, using the difference in the etching selectivities of the inter-metal dielectric layer and the barrier ... | 07/10/2001 |
| 6258694 | Fabrication method of a device isolation structure A fabrication method of a device isolation structure. A patterned mask layer is formed on a silicon substrate. A dopant is doped into an exposed substrate to prevent a bird's beak silicon region from being oxidized in a first doping step. A spacer is form... | 07/10/2001 |
| 6258692 | Method forming shallow trench isolation The invention provides a method of forming shallow trench isolation. In the method, a first mask and a second mask layer are made of polysilicon and silicon oxide, respectively. Part of the first mask layer is oxidized into a protective oxide layer during... | 07/10/2001 |
| 6259371 | Power surge detection device A power surge detection device is disclosed to investigate if there is any power surge occurring to a main processor in a computer system. When the width or frequency of power surges detected jeopardize the normal operation of the computer system, an aler... | 07/10/2001 |
| 6259667 | Optical disk loader A disk loader for loading disk into a disk reader having a vertical protection panel and a retractable block structure. The vertical protection panel is used for restricting bare disk so that even if the disk reader is vertically placed, the disk cannot f... | 07/10/2001 |
| 6255689 | Flash memory structure and method of manufacture A flash memory cell structure and its method of manufacture. The flash memory cell has a vertical configuration. An opening and then a trench are formed in a substrate by etching. The trench (defined as the recessed section of the substrate) is used for f... | 07/03/2001 |
| 6252768 | Shock-absorbing device for notebook computer module A shock absorbing device for a notebook computer module. The device comprises of a notebook computer module, a cooling/protective plate, and two springs. A first spring is installed between the notebook computer module and the cooling/protective plate tha... | 06/26/2001 |
| 6251735 | Method of forming shallow trench isolation structure A method of forming a shallow trench isolation (STI) structure. A dielectric layer is formed over the interior surface of a shallow trench. Spacers are formed on the sidewalls of the shallow trench such that a portion of the dielectric layer at the bottom... | 06/26/2001 |
| 6245667 | Method of forming via A method of forming a via. A stacked structure has a barrier layer and a metal line is formed over a substrate. Spacers capable of serving as a barrier are formed over tapering sidewalls of the stacked structure before vias and plugs are formed.... | 06/12/2001 |
| 6245617 | Method of fabricating dielectric layer A method of fabricating a dielectric layer is provided. A first oxide layer is formed on a polysilicon layer. A silicon-rich nitride layer is formed on a first oxide layer. A silicon-poor nitride layer is formed on the silicon-rich nitride layer. An oxida... | 06/12/2001 |
| 6247075 | Mouse interface converter for connecting mouse to computers with different types of connecting ports A mouse interface converter is provided, which allows a mouse to be connectable to a computer system, such as a personal computer (PC), installed with either an RS-232 serial port or a PS/2 port. This mouse interface converter allows the mouse to be conne... | 06/12/2001 |
| 6245633 | Fabrication method for a double-side double-crown stacked capacitor A method for fabricating a stacked capacitor is described, which is applicable to the fabrication of a capacitor with a double-sided double crown bottom electrode. The first crown structure of the bottom electrode is established by forming a patterned mat... | 06/12/2001 |
| 6242342 | Fabrication method for a borderless via of a semiconductor device A method for fabricating a borderless via on a semiconductor device is described in which a substrate comprising a dielectric layer is provided. A conductive layer, a barrier layer and a metal layer are sequentially formed on the dielectric layer. A first... | 06/05/2001 |
| 6242283 | Wafer level packaging process of semiconductor A wafer level packaging process comprises the following steps: First of all, to bond directly a carrier's substrate to a die wherein the substrate has connecting points such as bumps formed or having solder balls planted. Thereafter, to perform wire-bondi... | 06/05/2001 |
| 6238600 | Method of manufacturing a composite optical element A method of manufacturing a composite optical element, in which method a lens material of plastic is formed on a lens. The lens has a first optical surface and a second optical surface, and a lateral edge tilted at an angle relative to the perpendicular c... | 05/29/2001 |
| 6239007 | Method of forming T-shaped gate A method of forming a T-shaped gate. Two insulation layers, each having a different etching rate, are sequentially formed over a conventional gate structure. A planarization of the insulation layer is next carried out. Utilizing the difference in etching ... | 05/29/2001 |
| 6239020 | Method for forming interlayer dielectric layer A method for fabricating an interlayer dielectric layer on a semiconductor substrate with a memory cell region and a periphery circuit region is described, wherein semiconductor devices are formed on the memory cell region and the periphery circuit region... | 05/29/2001 |
| 6238996 | Method of forming a shallow trench isolation structure This invention provides a concave shallow trench isolation structure, and a fabricating method of a shallow trench isolation structure with concave bottom corners. The concave shape of the structure prevents stress centralization, and avoids leakage curre... | 05/29/2001 |
| 6235576 | Method for manufacturing a cylindrical capacitor A method for manufacturing a cylindrical capacitor on a substrate includes the steps of providing a semiconductor substrate having a first conductive layer thereon, and then forming an insulation layer over the first conductive layer. The insulation layer... | 05/22/2001 |
| 6235595 | Method of fabricating metal oxide semiconductor This invention provides a method for fabricating a metal oxide semiconductor. A pad oxide layer, a mask layer and an insulator layer are formed in sequence on a substrate. The insulator layer and the mask layer are patterned to form an opening that expose... | 05/22/2001 |
| 6235596 | Method for manufacturing a MOS device with multiple threshold voltages A method for manufacturing a MOS device with multiple threshold voltages is provided. The method comprises providing a substrate. A shallow trench isolation structure is formed in the substrate. The top surface of the shallow trench isolation structure is... | 05/22/2001 |
| 6232175 | Method of manufacturing double-recess crown-shaped DRAM capacitor A double recess crown-shaped DRAM capacitor is formed in a simplified process. A dielectric layer is formed over a substrate. Using photolithographic and etching techniques, a contact opening is formed in the dielectric layer. A conductive layer is formed... | 05/15/2001 |
| 6232162 | Method of complementary metal-oxide semiconductor A method of fabricating a complementary metal-oxide semiconductor. A semiconductor substrate having a first conductive type region and a second conductive type region is provided. A conductive layer is formed on the substrate. A patterned insulating layer... | 05/15/2001 |
| 6232183 | Method for fabricating a flash memory A method for fabricating a flash memory is disclosed, in which a stacked gate structure comprising a floating gate and a control gate on the substrate is first formed. Ions are implanted into the substrate at one side of the stacked gate. A drain having a... | 05/15/2001 |
| 6232551 | Substrate board for semiconductor package A substrate board structure formed by stacking a plurality of circuit layers and insulation layers on top of each other. Each circuit layer has a plurality of circuit lines and every circuit layer is separated from its neighbors by an insulation layer. Th... | 05/15/2001 |
| 6232214 | Method for fabricating inter-metal dielectric layer A method for fabricating an inter-metal dielectric layer. Several conducting wires are formed on a substrate, and openings lie between the adjacent conducting wires. A first dielectric layer fills the openings, and the surface of the first dielectric laye... | 05/15/2001 |
