Did You Know...
...that the video game, Pong, was invented by a guy who graduated at the bottom of his engineering class? Nolan Bushnell spent more time running the games at a local amusement park than he did on his studies at the University of Utah. His dreams of working for Disney's amusement empire were dashed when the company wouldn't hire him. Taking a boring job, Nolan daydreamed about electronic versions of popular games. He invented Pong, the first video game, and went on to found Atari Co.
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| Number | Title | Issue Date |
| 7893741 | Multiple-stage, signal edge alignment apparatus and methods Signal edge alignment embodiments include multiple delay stages connected in series. Each delay stage includes a delay line, an interface circuit, and a tap selection circuit. The delay line applies fixed-width delays to an input signal to produce delayed versions o... | 02/22/2011 |
| 7848739 | Method for transfer of user identity between CDMA wireless communication devices A method is provided for transferring user identities between one CDMA wireless communication device (120) and another in a wireless CDMA communication system (100) having a network system controller (140). The network controller (140) re... | 12/07/2010 |
| 7869438 | Pre-authentication across an 802.11 layer-3 IP network A method for pre-authentication in a wireless network is disclosed. The method begins by receiving, from a mobile client device, an Ethernet pre-authentication frame having an Ethernet address corresponding to a destination infrastructure device in the wireless netw... | 01/11/2011 |
| 7863909 | System and method for measuring a capacitance by transferring charge from a fixed source A touch sensor device and method is provided that determines measurable capacitances for object detection. The systems and methods measure capacitance by controllably transferring charge from a storage capacitor, and determining the measurable capacitance by measuri... | 01/04/2011 |
| 7852253 | Digitally adjustable quantization circuit Apparatus and methods are provided for converting an analog input signal to a digital output value. A quantization circuit comprises an input node and a comparator array, wherein each comparator of the comparator array is coupled to the input node. A voltage divider... | 12/14/2010 |
| 7852249 | Sigma-delta modulator with digitally filtered delay compensation Apparatus are provided for continuous-time sigma-delta modulators. The sigma-delta modulator comprises an input node for an input signal and a quantizer configured to convert an analog signal to a digital value. A main feedback arrangement is coupled to the quantize... | 12/14/2010 |
| 7851889 | MOSFET device including a source with alternating P-type and N-type regions Apparatus and methods are provided for fabricating semiconductor devices with reduced bipolar effects. One apparatus includes a semiconductor body (120) including a surface and a transistor source (300) located in the semiconductor body proximate the s... | 12/14/2010 |
| 7851834 | Cascode current mirror and method Embodiments of a cascode amplifier (CA) include a bottom transistor with a relatively thin gate dielectric and higher ratio of channel length to width and a series coupled top transistor with a relatively thick gate dielectric and a lower ratio of channel length to ... | 12/14/2010 |
| 7838389 | Enclosed void cavity for low dielectric constant insulator Field effect devices and ICs (80, 82, 84) with very low gate-drain capacitance Cgd are provided by forming a substantially empty void (70, 100) between the gate (60′) and the drain (27) regions. For vertical FETS a cavity (70, 100 | 11/23/2010 |
| 7838383 | Methods for forming MOS capacitors Method (200) and apparatus (30, 50-53) are described for MOS capacitors (MOS CAPs). The apparatus (30, 50-53) comprises a substrate (31) having Ohmically coupled N and P semiconductor regions (32, 34; 54, 56; 92, 94) ... | 11/23/2010 |
| 7835705 | Integrated bidirectional junction engineered dual insulator transceiver A bi-directional transceiver (100) having reduced circuitry and that may be formed on a non-semiconductor substrate includes impedance matching and filtering circuitry (114, 116, 122, 124, 128, 132) coupled to a non-linear diode (118) for conver... | 11/16/2010 |
| 7835435 | Techniques for compressing differential samples of bandwidth-limited data to reduce bandwidth and power consumption by an interface Techniques and technologies are provided for compressing differential samples of bandwidth-limited data and coding the compressed differential samples to reduce bandwidth and power consumption when communicating bandwidth-limited data over a serial interface which c... | 11/16/2010 |
| 7834428 | Apparatus and method for reducing noise in mixed-signal circuits and digital circuits Apparatus and a method are provided for reducing noise in mixed-signal and digital circuits. One apparatus (200) includes a metal-oxide-semiconductor field-effect transistor (MOSFET) (210). MOSFET (210) includes a doped substrate (2210) w... | 11/16/2010 |
| 7834417 | Antifuse elements An antifuse element (102, 152, 252, 302, 352, 402, 602, 652, 702) includes a substrate material (101) having an active area (106) formed in an upper surface, a gate electrode (104) having at least a portion positioned above the active are... | 11/16/2010 |
| 7833858 | Superjunction trench device formation methods Methods for forming semiconductor structures are provided for a semiconductor device employing a superjunction structure and overlying trench with embedded control gate. An embodiment comprises forming interleaved first and second spaced-apart regions of first and s... | 11/16/2010 |
| 7829401 | MOSFET with asymmetrical extension implant A method for fabricating a MOSFET (e.g., a PMOS FET) includes providing a semiconductor substrate having surface characterized by a (110) surface orientation or (110) sidewall surfaces, forming a gate structure on the surface, and forming a source extension and a dr... | 11/09/2010 |
| 7825797 | Proximity sensor device and method with adjustment selection tabs A proximity sensor device and method is provided that facilitates improved usability. Specifically, the proximity sensor device and method provides the ability for a user to easily select the type of adjustment inputted by the proximity sensor device. In one embodim... | 11/02/2010 |
| 7821103 | Counter-doped varactor structure and method An improved varactor diode (40) is obtained by providing a substrate (41) having a first surface (43), in which are formed a P+ region (53, 46) proximate the first surface (43), a first N region (54, 45) located beneath the ... | 10/26/2010 |
| 7820532 | Methods for simultaneously forming doped regions having different conductivity-determining type element profiles Method for simultaneously forming doped regions having different conductivity-determining type elements profiles are provided. In one exemplary embodiment, a method comprises the steps of diffusing first conductivity-determining type elements into a first region of ... | 10/26/2010 |
| 7817135 | Capacitive mouse A pointing device some or all of whose elements are made from capacitive sensors. Such elements may include a rotary motion detector which includes a rotating member and a plurality of fixed capacitive detecting members; a rolling ball with patterned conductive surf... | 10/19/2010 |
| 7816221 | Dielectric ledge for high frequency devices High frequency performance of (e.g., silicon) bipolar devices (40, 100, 100″) is improved by reducing the capacitive coupling (Cbc) between the extrinsic base contact (46) and the collector (44, 44′, 44″). A dielectric ledge (453, 453â€... | 10/19/2010 |
| 7812829 | Object position detector with edge motion feature and gesture recognition A method of generating a signal comprising providing a capacitive touch sensor pad including a matrix of X and Y conductors, developing capacitance profiles in one of an X direction and a Y direction from the matrix of X and Y conductors, determining an occurrence o... | 10/12/2010 |
| 7805116 | Gain control methods for wireless devices and transmitters Embodiments of wireless devices and transmitters are provided, which perform embodiments of automatic gain control methods. The embodiments of wireless devices and transmitters include a ramp generator, a digital gain signal generator, a combiner, and a variable gai... | 09/28/2010 |
| 7803685 | Silicided base structure for high frequency transistors High frequency performance of (e.g., silicon) bipolar devices (100, 100″) is improved by reducing the extrinsic base resistance Rbx. Emitter (160), base (161) and collector (190) are formed in or on a semiconductor substrate (110... | 09/28/2010 |
| 7802359 | Electronic assembly manufacturing method A method is described for manufacturing electronic assemblies (52). Electronic die (36) held in a plastic matrix (43) form a partially completed panel (35) of electronic assemblies (52). The panel (35) is adhesively mounted ... | 09/28/2010 |
| 7800350 | Apparatus for optimizing diode conduction time during a deadtime interval Deadtime optimization techniques and circuits are provided which implement closed loop feedback to reduce a duration of a deadtime interval by reducing a diode conduction time (DCT) to an optimized or minimized value. Information regarding DCT is fed back to continu... | 09/21/2010 |
| 7797008 | Method and apparatus for reducing access delay in push to talk over cellular (PoC) communications A method and apparatus for reducing access delay in push-to-talk (PTT) over Cellular (PoC) communication sessions is provided in a wireless communication device (120) including a quality level controller (230) which controls the quality level at which ... | 09/14/2010 |
| 7796079 | Charge redistribution successive approximation analog-to-digital converter and related operating method The analog-to-digital converter provided herein includes a capacitor bank comprising a plurality of binary-weighted capacitors, an operational amplifier having an inverting input node, a noninverting input node coupled to analog ground, and an output node, a reset s... | 09/14/2010 |
| 7795980 | Power amplifiers having improved protection against avalanche current A power amplifier for use in a radio frequency (RF) transmitter or other device exhibits improved protection from voltage standing wave ratio (VSWR) issues emanating from avalanche currents. The amplifier circuit includes a power transistor having a base terminal, a... | 09/14/2010 |
| 7795702 | Microelectronic assemblies with improved isolation voltage performance Embodiments of microelectronic assemblies are provided. First and second semiconductor devices are formed over a substrate having a first dopant type at a first concentration. First and second buried regions having a second dopant type are formed respectively below ... | 09/14/2010 |
| 7795674 | Dual gate LDMOS devices An embodiment of an N-channel device has a lightly doped substrate in which adjacent or spaced-apart P and N wells are provided. A lateral isolation wall surrounds at least a portion of the substrate and is spaced apart from the wells. A first gate overlies the P we... | 09/14/2010 |
| 7791161 | Semiconductor devices employing poly-filled trenches Structure and method are provided for semiconductor devices. The devices include trenches filled with highly doped polycrystalline semiconductor, extending from the surface into the body of the device for, among other things: (i) reducing substrate current injection... | 09/07/2010 |
| 7786603 | Electronic assembly having graded wire bonding According to one aspect of the present invention, an electronic assembly is provided. The electronic assembly comprises a substrate with a lead connected thereto and first and second microelectronic components on the substrate. The first microelectronic component ha... | 08/31/2010 |
| 7778653 | Method and apparatus for targeted paging in a multi-cell wireless communication system A method and communication system is provided for optimizing paging of a mobile communication device in cells of a multi-cell communication system. The communication system includes the cells, a network controller, and the mobile communication device. Each of the ce... | 08/17/2010 |
| 7777503 | Methods and systems for guarding a charge transfer capacitance sensor for proximity detection Methods, systems and devices are described for determining a measurable capacitance for proximity detection in a sensor having a plurality of sensing electrodes and at least one guarding electrode. A charge transfer process is executed for at least two executions. T... | 08/17/2010 |
| 7777501 | Methods and systems for sigma delta capacitance measuring using shared component Methods, systems and devices are described for detecting a measurable capacitance using sigma-delta charge transfer techniques that can be implemented with many standard microcontrollers, and can share components to reduce device complexity and improve performance. ... | 08/17/2010 |
| 7777257 | Bipolar Schottky diode and method A low leakage bipolar Schottky diode (20, 40, 87) is formed by parallel lightly doped N (32, 52, 103) and P (22, 42, 100) regions adapted to form superjunction regions. First ends of the P regions (22, 42, 100) are terminated by P+ layers... | 08/17/2010 |
| 7776700 | LDMOS device and method An N-channel device (40, 60) is described having a very lightly doped substrate (42) in which spaced-apart P (46) and N (44) wells are provided, whose lateral edges (461, 45) extending to the surface (47). The gate (56 | 08/17/2010 |
| 7776386 | Method for forming a micro fuel cell A method is provided for fabricating an integrated micro fuel cell that derives power from a three-dimensional fuel/oxidant interchange having increased surface area and that is positioned on a second substrate that may be either porous or flexible with gas access h... | 08/17/2010 |
| 7763937 | Variable resurf semiconductor device and method Methods and apparatus are provided for semiconductor device (60, 95, 100, 106). The semiconductor device (60, 95, 100, 106), comprises a first region (64, 70) of a first conductivity type extending to a first surface (80), a second region... | 07/27/2010 |
