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Attorney: Hultquist; Steven J., Elliott; Janet R.


Number of patents: 12
Last date: February 17, 1998

NumberTitleIssue Date
5719417Ferroelectric integrated circuit structure
There is disclosed a structure of and a method for fabricating a ferroelectric film on a non-conductive substrate. An adhesion layer, e.g., a layer of silicon dioxide and a layer of zirconium oxide, is deposited over a substrate. A conductive layer, e.g.,...
02/17/1998
5707424Process system with integrated gas storage and delivery unit
A process system with an integrated gas storage and delivery unit comprising an adsorption-desorption apparatus, for storage and dispensing of a gas wherein the gas is dispensed by pressure differential desorption of the sorbate gas from the sorbent mater...
01/13/1998
5705443Etching method for refractory materials
A plasma-assisted dry etching process for etching of a metal containing material layer on a substrate to remove the metal containing material from the substrate, comprising (i) plasma etching the metal containing material and, (ii) contemporaneously with ...
01/06/1998
5704967Fluid storage and delivery system comprising high work capacity physical sorbent
An adsorption-desorption apparatus, for storage and dispensing of a sorbable gas, wherein a physical sorbent medium bearing the adsorbed gas to be selectively dispensed is delivered by pressure differential desorption and/or thermal desorption of the sorb...
01/06/1998
5704965Fluid storage and delivery system utilizing carbon sorbent medium
An adsorption-desorption apparatus, for storage and dispensing of a sorbable gas, wherein a carbon physical sorbent medium bearing the adsorbed gas to be selectively dispensed is delivered by pressure differential desorption and/or thermal desorption of t...
01/06/1998
5698022Lanthanide/phosphorus precursor compositions for MOCVD of lanthanide/phosphorus oxide films
A precursor composition useful for vapor deposition formation of lanthanide metal/phosphorus oxide films, comprising a precursor compound selected from the group consisting of: (i) adducts of the formula MA3 (L)x ; (ii) phosphido com...
12/16/1997
5686178Metal-coated substrate articles responsive to electromagnetic radiation, and method of making the same
An article comprising a non-conductive substrate, preferably of an environmentally degradeable character, having a thickness of an oxidizable metal coating thereon, and optionally an oxidation enhancingly effective amount of a salt, e.g., from about 0.005...
11/11/1997
5676712Flashback protection apparatus and method for suppressing deflagration in combustion-susceptible gas flows
A flashback protection apparatus and method for suppressing deflagration of a deflagration-susceptible gas in a flow system in which the deflagration-susceptible gas is flowed. The method of the invention comprises monitoring the combustible gas to detect...
10/14/1997
5663518Method and device for the in-flight cutting and dispensing of chaff dipoles from an aerial vehicle
A method for the self-protection of an aircraft or the like against radar-guided missiles and a self-protection device for use in aircraft and the like against radar-guided missiles, which enables in-flight cutting and dispensing of chaff dipoles of a pre...
09/02/1997
5653806Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same
An apparatus for dispersingly delivering a vapor-phase source reagent material containing a deposition species, to a substrate for deposition of such species thereon. The apparatus includes a disperser housing having a front wall with an array of discharg...
08/05/1997
5622682Method for concentration and recovery of halocarbons from effluent gas streams
A process for recovery of halocarbons from a gas mixture containing the halocarbon and acid gas components comprises the steps of contacting the gas mixture with a dry scrubber to remove the acid gas components from the gas mixture and yield a first efflu...
04/22/1997
5453494Metal complex source reagents for MOCVD
Metal organic chemical vapor deposition (MOCVD) source reagents useful for formation of metal-containing films, such as thin film copper oxide high temperature superconductor (HTSC) materials. The source reagents have the formula MAyX wherein: M is a meta...
09/26/1995
 
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