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| Number | Title | Issue Date |
| 6278337 | Integrated released beam oscillator and associated methods An integrated oscillator and associated methods are provided for providing clock signals. The integrated oscillator preferably includes a micro-mechanical oscillating circuit for providing an oscillating clock signal. The micro-mechanical oscillating circ... | 08/21/2001 |
| 6218209 | Integrated released beam sensor for sensing acceleration and associated methods An integrated circuit and method are provided for sensing activity such as acceleration in a predetermined direction. The integrated released beam sensor preferably includes a switch detecting circuit region and a sensor switching region connected to and ... | 04/17/2001 |
| 6181791 | Apparatus and method for reducing local interference in subscriber loop communication system An apparatus communicates over a communications channel and has reduced undesired local echo. The transmitter generates a transmit signal to the communications channel in a frequency band outside a voice frequency band. A receiver receives signals from th... | 01/30/2001 |
| 6171879 | Methods of forming thermo-mechanical sensor An integrated circuit and method are provided for sensing activity such as temperature variations in a surrounding environment. The integrated released beam sensor preferably includes a switch detecting circuit region and a sensor switching region connect... | 01/09/2001 |
| 6134125 | AC and DC input power supply An AC and DC input power supply includes an AC power supply circuit and an AC input for receiving a range of AC input voltages. A rectifier circuit is connected to the AC input. An isolation output transformer has first and second primary winding terminal... | 10/17/2000 |
| 6124765 | Integrated released beam oscillator and associated methods An integrated oscillator and associated methods are provided for providing clock signals. The integrated oscillator preferably includes a micro-mechanical oscillating circuit for providing an oscillating clock signal. The micro-mechanical oscillating circ... | 09/26/2000 |
| 6087709 | Method of forming an integrated circuit having spacer after shallow trench fill and integrated circuit formed thereby A method of forming an isolation region in an integrated circuit and an integrated circuit formed thereby. A method preferably includes forming at least one trench in a semiconductor substrate, forming an insulation layer of material in the at least one t... | 07/11/2000 |
| 6086244 | Low power, cost effective, temperature compensated, real time clock and method of clocking systems A temperature compensated clock and method of clocking systems are provided. The clock preferably has an oscillator for generating an oscillating waveform signal at a preselected frequency and a frequency divider responsive to the oscillator for dividing ... | 07/11/2000 |
| 6075742 | Integrated circuit for switching from power supply to battery, integrated latch lock, and associated method for same An integrated circuit and associated method for switching from a power supply to a battery are provided. The integrated circuit preferably includes a memory circuit responsive to an external power supply and to a battery for storing data therein and a sle... | 06/13/2000 |
| 6058778 | Integrated sensor having plurality of released beams for sensing acceleration An integrated circuit and method are provided for sensing activity such as acceleration in a predetermined direction of movement. The integrated released beam sensor preferably includes a switch detecting circuit region and a sensor switching region conne... | 05/09/2000 |
| 6034410 | MOSFET structure with planar surface A method is provided for a planar surface of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A conductive layer is formed over a substrate. A silicon nitride layer is formed over the conductive layer. A photores... | 03/07/2000 |
| 6028343 | Integrated released beam sensor for sensing acceleration and associated methods An integrated circuit and method are provided for sensing activity such as acceleration in a predetermined direction. The integrated released beam sensor preferably includes a switch detecting circuit region and a sensor switching region connected to and ... | 02/22/2000 |
| 6027979 | Method of forming an integrated circuit device A mask is used for lightly doped drain and halo implants in an integrated circuit device. The mask exposes only portions of the substrate adjacent to field effect transistor gate electrodes. Since the halo implant is made only near the transistor channels... | 02/22/2000 |
| 6022788 | Method of forming an integrated circuit having spacer after shallow trench fill and integrated circuit formed thereby A method of forming an isolation region in an integrated circuit and an integrated circuit formed thereby. A method preferably includes forming at least one trench in a semiconductor substrate, forming an insulation layer of material in the at least one t... | 02/08/2000 |
| 5990753 | Precision oscillator circuit having a controllable duty cycle and related methods A precision oscillator includes a capacitor, a charging current source, a discharging current source, a switch for alternatingly connecting the capacitor to the charging current source and the discharging current source, and a hysteretic comparator connec... | 11/23/1999 |
| 5969541 | Current inhibiting I/O buffer having a 5 volt tolerant input and method of inhibiting current A tri-state I/O buffer and a method of inhibiting current to an I/O buffer arranged to be powered by a supply voltage and to drive an output terminal are provided. The I/O buffer preferably has an output driving circuit connected to the supply voltage for... | 10/19/1999 |
| 5939934 | Integrated circuit passively biasing transistor effective threshold voltage and related methods An integrated circuit preferably includes a plurality of enhancement-mode MOSFETs on a substrate with each MOSFET having an initial threshold voltage, and a plurality of resistors connected to define a resistor voltage divider for passively biasing the MO... | 08/17/1999 |
| 5929695 | Integrated circuit having selective bias of transistors for low voltage and low standby current and related methods An integrated circuit includes a plurality of MOSFETs on a substrate. The plurality of MOSFETs preferably includes at least one MOSFET having a first conductivity type and at least one MOSFET having a second conductivity type. Each MOSFET has an initial t... | 07/27/1999 |
| 5917313 | DC-to-DC converter with soft-start error amplifier and associated method A DC-to-DC converter includes an error amplifier; a ramp generator for generating a ramp signal at the first input of the error amplifier independent of the output of the error amplifier and so that the output of the error amplifier ramps up at a relative... | 06/29/1999 |
| 5917226 | Integrated released beam, thermo-mechanical sensor for sensing temperature variations and associated methods An integrated circuit and method are provided for sensing activity such as temperature variations in a surrounding environment. The integrated released beam sensor preferably includes a switch detecting circuit region and a sensor switching region connect... | 06/29/1999 |
| 5894158 | Having halo regions integrated circuit device structure A mask is used for lightly doped drain and halo implants in an integrated circuit device. The mask exposes only portions of the substrate adjacent to field effect transistor gate electrodes. Since the halo implant is made only near the transistor channels... | 04/13/1999 |
| 5883507 | Low power temperature compensated, current source and associated method An integrated circuit and method are provided for generating current for low power applications. The integrated circuit preferably includes a current generating circuit responsive to a supply voltage for generating a first reference current and a temperat... | 03/16/1999 |
| 5883544 | Integrated circuit actively biasing the threshold voltage of transistors and related methods An integrated circuit includes a plurality of MOSFETs having channels of a first conductivity type, and having active control of an effective threshold voltage of the MOSFETs to be less than an absolute value of an initial threshold voltage. In this embod... | 03/16/1999 |
| 5883844 | Method of stress testing integrated circuit having memory and integrated circuit having stress tester for memory thereof An integrated circuit having enhanced testing capabilities and a method of testing an integrated circuit are provided. The integrated circuit preferably includes a substrate and a memory block on the substrate. The memory block preferably has a plurality ... | 03/16/1999 |
| 5874769 | Mosfet isolation structure with planar surface A method is provided for a planar surface of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A conductive layer is formed over a substrate. A silicon nitride layer is formed over the conductive layer. A photores... | 02/23/1999 |
| 5869388 | Method of gettering using doped SOG and a planarization technique A method is provided for a planar surface of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A gate electrode is formed over a substrate having source/drain regions adjacent to the gate electrode and in the subs... | 02/09/1999 |
| 5862301 | Motor control with clamped filter output A motor control circuit, including a filter amplifier which includes a clamping circuit to limit the maximum voltage of the filter amplifier. The filter amplifier is clamped to essentially the same level as the following error amplifier, which drives the ... | 01/19/1999 |
| 5837587 | Method of forming an integrated circuit device A mask is used for lightly doped drain and halo implants in an integrated circuit device. The mask exposes only portions of the substrate adjacent to field effect transistor gate electrodes. Since the halo implant is made only near the transistor channels... | 11/17/1998 |
| 5834966 | Integrated circuit sensing and digitally biasing the threshold voltage of transistors and related methods An integrated circuit includes a plurality of MOSFETs on a substrate. A plurality of sensing MOSFETs are used to generate a plurality of comparison signals based upon comparing signals related to the sensed initial threshold voltages to respective referen... | 11/10/1998 |
| 5793247 | Constant current source with reduced sensitivity to supply voltage and process variation A current source for generating a current that is relatively stable over variations in the power supply voltage and temperature, and over variations in process parameters is disclosed. The current source includes a bias circuit, for producing a compensati... | 08/11/1998 |
| 5770892 | Field effect device with polycrystalline silicon channel A CMOS SRAM cell has a polycrystalline silicon signal line between a common node, which is the data storage node, and the power supply. A field effect device is fabricated within this polycrystalline silicon signal line. The channel of the field effect de... | 06/23/1998 |
| 5736433 | Double mask hermetic passivation method providing enhanced resistance to moisture A passivation structure is formed using two passivation layers and a protective overcoat layer using two masking steps. The first passivation layer is formed over the wafer and openings are provided to expose portions of the pads for testing the device an... | 04/07/1998 |
| 5724728 | Method of mounting an integrated circuit to a mounting surface A system for packaging integrated circuit components including a ball grid array substrate with a plurality of solder balls coupled to the substrate. A semiconductor device is mounted on the substrate and electrically coupled to the solder balls. One or m... | 03/10/1998 |
| 5706232 | Semiconductor memory with multiple clocking for test mode entry An integrated circuit having a normal operating mode and a special operating mode, such as a special test mode, is disclosed. The special test mode is enabled by a series of signals, such as overvoltage excursions at a terminal, rather than by a single su... | 01/06/1998 |
| 5698894 | Double mask hermetic passivation structure A passivation structure is formed using two passivation layers and a protective overcoat layer using two masking steps. The first passivation layer is formed over the wafer and openings are provided to expose portions of the pads for testing the device an... | 12/16/1997 |
