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| Number | Title | Issue Date |
| 5977542 | Restoration of CD fidelity by dissipating electrostatic charge An integrated circuit manufacturing process for substantially eliminating negative electrostatic charge on a wafer surface after resist processing, comprising contacting the wafer with a dilute electrolyte solution having positive ions, restores the fidel... | 11/02/1999 |
| 5939763 | Ultrathin oxynitride structure and process for VLSI applications A process for growing an ultra-thin dielectric layer for use as a MOSFET gate oxide or a tunnel oxide for EEPROM's is described. A silicon oxynitride layer, with peaks in nitrogen concentration at the wafer-oxynitride interface and at the oxynitride surfa... | 08/17/1999 |
| 5936307 | Surface modification method for film stress reduction A method for reducing stress in a TiN layer of a metallization structure, and a silicon wafer portion made by this method. The surface of the dielectric under the TiN is roughened using a water polish with a hard pad, to provide micromounts and valleys on... | 08/10/1999 |
| 5916855 | Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films A polishing slurry composition and its method of making for planarization of silicon semiconductor wafers by chemical mechanical polishing of the wafer. A slurry formulation utilizing a ferric salt tungsten oxidizer, an ammonium persulfate titanium oxidiz... | 06/29/1999 |
| 5825066 | Control of juction depth and channel length using generated interstitial gradients to oppose dopant diffusion An improved manufacturing process and an improved device made by the process for retarding diffusion of implanted dopants during subsequent high-temperature processing. A layer of an electrically inactive species is implanted well below the active dopant ... | 10/20/1998 |
| 5807790 | Selective i-line BARL etch process A photolithographic substrate mask patterning method which enables the reduction of changes in critical dimensions which occur in prior art etching of organic photoresist and the underlying organic i-line bottom anti-reflection layer (BARL) on a non-plana... | 09/15/1998 |
| 5789318 | Use of titanium hydride in integrated circuit fabrication An improved process for forming titanium silicide layers on semiconductor device silicon regions which have native oxide thereon utilizes a reactively sputter deposited layer of TiHxࣘ2 followed by a rapid thermal anneal in a nitrogen bearing ... | 08/04/1998 |
| 5789315 | Eliminating metal extrusions by controlling the liner deposition temperature An improved integrated circuit manufacturing process for forming interlevel dielectrics in multilevel metallization structures eliminates extrusions of metal into vias following via etch. The deposition temperature of the conformal dielectric liner is con... | 08/04/1998 |
| 5789802 | Dopant profile spreading for arsenic source/drain An improved process for forming shallow arsenic-doped source/drain regions in MOS devices utilizes a two-step arsenic implant which lowers the surface arsenic concentration while maintaining sharp junction profile and desired junction depth. Minimizing th... | 08/04/1998 |
| 5761254 | Digital architecture for recovering NRZ/NRZI data A method and apparatus for generating a data signal from a transmitted data signal that has been distorted by duty cycle jitter. A locally generated symbol signal is propagated in a delay line such that taps along the delay line emit bit phase signals tha... | 06/02/1998 |
| 5670707 | Calibration method for a chromatography column A chromatography system and method employing an empirical method for determining the ratio ##EQU1## for a chromatography column with improved accuracy by establishing experimental conditions for at least one of the parameters of temperature, pre... | 09/23/1997 |
| 5645675 | Selective planarization apparatus Technique and apparatus for planarizing microsteps on a substrate by compressing the surface to be smoothed against a frozen layer of an etchant, where the compressive force is sufficient to melt the etchant at the contact edges between said microsteps an... | 07/08/1997 |
| 5627105 | Plasma etch process and TiSix layers made using the process A method for making an improved metal silicide layer on a silicon substrate by plasma bombardment of the substrate with Ne ions to remove the native oxide without damage or significant implantation of Ne atoms into said silicon, depositing a metal layer o... | 05/06/1997 |
| 5619148 | Digital variable in-lock range phase comparator A novel method and apparatus providing an all digital phase comparator of two binary signals which employs a type of cross correlation of two binary signals and provides a 2bit binary word uniquely representative of phase alignment. The method can be carr... | 04/08/1997 |
| 5572038 | Charge monitor for high potential pulse current dose measurement apparatus and method A charge measuring system for determining implantation dose in a PI3 system with means to compensate for current in the charge sensor which does not arise from positive ions arriving on the wafer.... | 11/05/1996 |
| 5511608 | Clampless vacuum heat transfer station A clampless heat exchange station for a semiconductor wafer for use in a vacuum chamber, at pressures from 2 Torr to 30 Torr using commercial grade inert gas. The heat exchange chuck has apertures therethrough in the region where the wafer is to be mounte... | 04/30/1996 |
| 5506534 | Digitally adjustable picosecond delay circuit A digitally adjustable time delay circuit which is able to precisely and selectively provide fine delay steps increments, which increments can be one nth of the delay time of one CMOS inverter, including means to adjust the total range of the delay and si... | 04/09/1996 |
| 5479022 | Electron capture detector with guard electrode An improved ECD employing an ECD cell having a third electrode, i.e. guard positioned between the ECD cell field electrodes. The guard electrode is physically interposed between said field electrodes to divert all leakage current in the support insulators... | 12/26/1995 |
| 5479649 | Method and apparatus for forming a logical combination of signals from diagnostic nodes in an IC chip for passive observation at a dedicated diagnostic pin Apparatus and method for programmably providing information on a dedicated output pin of an integrated circuit, which information is diagnostic about a plurality of nodes inside of said integrated circuit by connecting said plurality of nodes and a progra... | 12/26/1995 |
| 5459422 | Edge selective delay circuit A digital circuit for independently controlling the delay of the falling edge and the delay of the rising edge of a digital signal which consist of two serially connected circuits which contain identical synchronous delay lines connected to a logical swit... | 10/17/1995 |
| 5457315 | Method of selective ion trapping for quadrupole ion trap mass spectrometers A power efficient selective mass range trap filling process in which the RF trapping voltage connected to the ring electrode is slowly modulated simultaneously with: (1) e-beam ionization bombardment and (2) application of a broadband supplemental wavefor... | 10/10/1995 |
| 5457719 | All digital on-the-fly time delay calibrator An on-chip digital servo scheme for providing continuous calibration of integrated circuit on-chip time delay devices to provide real-time regulation against various parameter or environmental changes, such as processing, temperature and power supply vari... | 10/10/1995 |
| 5452069 | Spark sampling microparticle generator and method A spark sampling microparticle generator device and method providing means to first ionize a gap and then to switch a stabilized and controllable current into and out of said ionized gap to provide extremely high, selectable current density in a sample ma... | 09/19/1995 |
| 5451894 | Digital full range rotating phase shifter The use of three identical delay line circuits enables one of said delay circuits to be connected as a minimum delay reference and a second delay circuit to then be continuously compared to said minimum delay reference delay circuit to provide a code whic... | 09/19/1995 |
| 5452333 | Digital jitter correction method and signal preconditioner Apparatus and methods for modifying an incoming binary serial data stream to reduce the Duty Cycle Distortion jitter which involves comparing the time between adjacent transitions and correcting the jitter by inserting delay before the early transition fo... | 09/19/1995 |
| 5448169 | Pulsed FT NMR employing fast combination scaler for faster operation An improved FT NMR system capable of faster computations by eliminating the time required to operate a shift register for the scaling in signal averaging. The system employs a combinational circuit which provides the commanded various scaled outputs in 50... | 09/05/1995 |
| 5417833 | Sputtering apparatus having a rotating magnet array and fixed electromagnets A magnetron sputter apparatus is disclosed which includes a rotatable generally heart-shaped, closed-loop magnet array behind the target and in front of a pair of separately driven stationary electromagnets. The apparatus is optimized to produce a sputter... | 05/23/1995 |
| 5404011 | MSn using CID A method for using a QIT and for performing collisionally induced disassociation MSn experiments by scanning the trap potential sequentially so that the field first experiences a secular frequency of a selected parent ion and then the secular f... | 04/04/1995 |
| 5396064 | Quadrupole trap ion isolation method A method for efficiently filling a QIT which isolates an ion range by employing a sequential part of supplemental broadband waveforms where the first such supplemental broadband waveform is applied during the period that the e-beam ionization bombardment ... | 03/07/1995 |
| 5376223 | Plasma etch process Method employing low pressure plasma having high electron density for rapid oxide etching employing hydrogen and argon and specific electron clyclotron resonance (ECR) operating parameters in an ECR having a non-oxygen contributing environment in the reac... | 12/27/1994 |
| 5364492 | Method of deposing by molecular beam epitaxy A new method for accurately and sequentially growing monolayers and creating new superlattice structures employing a MBE thermal source control technique employing a quasi-double beam atomic absorption background correction measurements with the beam bloc... | 11/15/1994 |
| 5354381 | Plasma immersion ion implantation (PI3) apparatus Implantation apparatus for cold cathode plasma immersion ion implantation (C2 PI3) without a continuous plasma using very short high voltage, low duty cycle ionization pulses, in conjunction with a synchronously produced electron flo... | 10/11/1994 |
| 5329977 | Pellet veneer lathe Methods and apparatus for using a veneer type lathe of compact design for the pellitizing of a log portion directly from the log without intermediate steps. A log saddle with slide guides for the axles of the incisor rolls enables a significant reduction ... | 07/19/1994 |
| 5302826 | Quadrupole trap improved technique for collisional induced disassociation for MS/MS processes Method and apparatus for inducing collisional disassociation of isolated ions in a QIT which employs low frequency modulation of the secular frequency of oscillation of the trapped ions so as to permit sufficient frequency coincidence with the fixed frequ... | 04/12/1994 |
| 5302900 | NMR sample shaper Improved NMR sample tube shapes and inserts for standard tubes to shape the sample for greater homogeneity to provide symmetry of liquid sample and tube to a greater distance from the observe region for the same volume of sample as used in the prior art.... | 04/12/1994 |
| 5291017 | Ion trap mass spectrometer method and apparatus for improved sensitivity An ion trap mass spectrometer system providing superposition of an AC dipole and/or monopole field on the quadrupole field to provide one preferential ejection direction.... | 03/01/1994 |
| 5281320 | Wafer coating system Semiconductor wafers having patterns of steps and grooves defining microcircuit elements thereon are coated with metallic film by supporting the wafers individually adjacent a respective ring-shaped sputtering source in stationary relationship thereto. To... | 01/25/1994 |
| 5266414 | Solid solution matrix cathode An impregnated thermionic cathode includes a porous matrix of sintered tungsten-alloy particles containing less than six percent iridium and/or other platinum-group metal. The pores of the matrix are impregnated with a temporary process impregnant such as... | 11/30/1993 |
| 5262727 | NMR probe An NMR probe having RF shield means to confine the RF magnetic field to an axial region having a length less than the length of the coil form.... | 11/16/1993 |
| 5238362 | Turbomolecular pump A high vacuum pump comprising an in-line connection on a single drive shaft of an axial turbomolecular compressor and a peripheral compressor where the pump provides better than 10-7 Pascal inlet when exhausting to atmosphere. The peripheral co... | 08/24/1993 |
