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Attorney: Finnegan, Henderson, Farabow, Garrett & Dunner


Number of patents: 2
Last date: February 09, 1982

NumberTitleIssue Date
4314595Method of forming nondefective zone in silicon single crystal wafer by two stage-heat treatment
A silicon single crystal wafer is subjected to two-stage heat treatment. In the first-stage it is heated at a temperature within the range of between 500° C. and 1,000° C. Subsequently the thus heated wafer is heated at a temperature higher than that at...
02/09/1982
4217502Converter producing three output states
An output circuit is provided in which a first IG-FET of a first conductivity type is connected between a first potential supply terminal and an output terminal and having its substrate controlled by a third potential higher than the first potential of th...
08/12/1980
 
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