Bizarre Patents
Crispy Chip Sandwich and Process of Producing a Sandwich Product
A food product comprising a multilayer cookie or snack having outer layers formed from a crispy type edible food product such as a potato chip or corn chip, etc. with an intermediate marshmallow layer being in contact with the inner surface of each crispy chip and one or more filler substances.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 5665648 | Integrated circuit spring contact fabrication methods An integrated-circuit interconnect which can be formed at the wafer level is achieved by depositing an intentionally stressed contact layer over a release layer which is subsequently removed. The removal of the release layer permits a portion of the conta... | 09/09/1997 |
| 5663596 | Integrated circuit spring contacts An integrated-circuit interconnect which can be formed at the wafer level is achieved by depositing an intentionally stressed contact layer over a release layer which is subsequently removed. The removal of the release layer permits a portion of the conta... | 09/02/1997 |
| 5649507 | Corona discharge ignition system A corona source suitable for use in vehicle ignition systems uses a conductive coil that receives an RF input at one end and has a corona discharge site at the other end, with a reference electrode capacitively coupled to the coil. The pitch and the lengt... | 07/22/1997 |
| 5608833 | Focal-plane detector imaging system with improved optical damage threshold A focal-plane detector imaging system that can tolerate higher intensity optical beams than prior systems, without a reduction in the system's field-of-view, comprises an imaging lens, a fiber optic array positioned at the image plane of the imaging lens ... | 03/04/1997 |
| 5606178 | Bipolar resonant tunneling transistor Base contacts are made to one or both barrier layers of a resonant tunneling bipolar transistor, rather than to the quantum well. This is made possible with the use of a type II rather than a type I energy band alignment in the active region.... | 02/25/1997 |
| 5526501 | Variable accuracy indirect addressing scheme for SIMD multi-processors and apparatus implementing same In a parallel processing architecture following the Single Instruction stream Multiple Data stream execution paradigm where a controller element is connected to at least one processing element with a local memory having a local memory address shift regist... | 06/11/1996 |
| 5514936 | RF plasma source and method for plasma cleaning of surface in space Contaminants are cleaned from the surface of a body in space by generating a substantially space-charge neutral reactive plasma, directing the plasma onto the contaminated surface at an energy below the surface sputtering energy (typically 20 eV), and rea... | 05/07/1996 |
| 5503506 | High precision, high surface finish broaching tool A broaching tool has a plurality of cutting teeth for broaching a small, deep hole with high precision and surface finish. Three to eight teeth are engaged in the hole for cutting at any one time. For broaching sticky metals such as stainless steel, each ... | 04/02/1996 |
| 5501822 | Fabrication method for a 3-d opto-electronic system with laser inter-substrate communication A 3-dimensional opto-electronic system employs an optical communications channel between spaced circuit substrates. The beam from an in-line laser on one substrate is deflected by a turning mirror that is monolithically integrated on the substrate along w... | 03/26/1996 |
| 5492607 | Method of fabricating a surface emitting laser with large area deflecting mirror A surface-emitting laser system includes a laser that emits a vertically divergent beam generally parallel to the substrate on which it is formed, and a turning mirror in the path of the beam that extends up from the substrate to a level well above the la... | 02/20/1996 |
| 5489786 | Current-controlled resonant tunneling device A current-controlled resonant tunneling diode (RTD) having an InAs quantum well, AlGaSb barriers and InAs cladding layers is disclosed. The RTD of this invention displays an S-shaped negative differential resistance in its I-V relationship. As a result, t... | 02/06/1996 |
| 5489549 | Method of fabricating n-type antimony-based strained layer superlattice High speed Group III-Sb materials are n-doped in a molecular beam epitaxy process by forming a superlattice with n-doped strained layers of a Group III-V compound upon Group III-Sb base layers. The base layers have lower conduction band energy levels than... | 02/06/1996 |
| 5489539 | Method of making quantum well structure with self-aligned gate Quantum well structures are fabricated by use of a process employing a Focused Ion Beam (FIB) scanning in the surface of a semiconductor substrate. The quantum well structures thus fabricated include Resonant Tunneling Transistors (RRTs) and one dimension... | 02/06/1996 |
| 5488620 | Passively mode locked-laser and method for generating a pseudo random optical pulse train A passively mode-locked laser and method for generating a coherent pseudo random pulse train is disclosed. The laser comprises an optical resonant cavity that is capable of sustaining the oscillation of a plurality of resonant modes having respective phas... | 01/30/1996 |
| 5488503 | Low-power, stabilized, photonic modulator system A simple, low-power feedback control loop is arranged to set the operating point of a photonic intensity modulator. The loop includes photodetectors which are respectively illuminated with a sample of the carrier signal into the modulator and the modulate... | 01/30/1996 |
| 5487922 | Surface preparation and deposition method for titanium nitride onto carbon-containing materials Wear-resistant titanium nitride coatings onto cast iron and other carbon-containing materials is enhanced by means of a new surface preparation and deposition process. The conventional pre-deposition surface cleaning by Ar+ ion bombardment is r... | 01/30/1996 |
| 5451552 | Method for improvement of optical quality and reduction of background doping in gainSB/INAS superlattices Post-growth annealing of GaInSb/InAs superlattices at about 400° to 650° C. in an antimony flux followed by cooling results in enhanced optical properties as determined by photoluminescence and in reduced background doping levels as determined by Hall m... | 09/19/1995 |
| 5436805 | Thermally insulated distributed light network from a central light source A thermally insulated distributed light network employs an array of discrete, thermally insulative light guides that are spaced slightly away from a central light source and provide optical coupling to optical fibers that have a lower thermal capability. ... | 07/25/1995 |
| 5386426 | Narrow bandwidth laser array system A spectral narrowing of the output bandwidth from a laser array is obtained by feeding back to the array a portion of its emitted light, while outputting the remainder of the light emitted from the array. An optical system to accomplish this preferably in... | 01/31/1995 |
| 5371744 | System and method for enumerating all acyclic paths in a processing system for reconfiguration and fault tolerance A system (30) and method is provided for enumerating acyclic paths in an information processing system. The system (30) incorporates multiple processor nodes (18) or functional units interconnected by point-to-point links (20). The hardware of the informa... | 12/06/1994 |
| 5361127 | Multi-image single sensor depth recovery system A multi-image single passive sensor depth recovery system is disclosed to determine the depth of an object in a scene, and includes a passive imaging sensor which images radiation from an object at a sensor plane. A lens having a multiplicity of facets lo... | 11/01/1994 |
| 5359220 | Hybrid bipolar/field-effect power transistor in group III-V material system A hybrid power transistor (40) includes a vertical PNP bipolar transistor (42) having a floating base (46). A junction-gate type field-effect transistor (FET) (62) has a lateral N-type channel (64,66) and a vertical electron injection path (54) from the c... | 10/25/1994 |
| 5330800 | High impedance plasma ion implantation method and apparatus A high dose rate, high impedance plasma ion implantation method and apparatus to apply high voltage pulses to a target cathode within an ionization chamber to both sustain a plasma in the gas surrounding the target, and to implant ions from the plasma int... | 07/19/1994 |
| 5303574 | Evaluation of the extent of wear of articles An article (40), such as a piece of manufacturing tooling, is modified prior to use by treating a portion of its surface (38) to be worn so that the treated surface worn more than a preselected amount has a different appearance than the treated surface wo... | 04/19/1994 |
