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| Number | Title | Issue Date |
| 6314896 | Method for operating a boiler using oxygen-enriched oxidants A method for operating a boiler using oxygen-enriched oxidants includes introducing oxygen-enriched air, or oxygen and air, in which the oxygen concentration ranges from about 21% to about 100% by volume. Fuel and oxygen-enriched air are introduced into t... | 11/13/2001 |
| 6284285 | Tissue repair promoting composition A method for isolating tissue repair promoting substances from human or animal blood, which method comprises collecting the human or animal blood from a single human or animal individual in a first container of a container system comprising at least first... | 09/04/2001 |
| 6273180 | Heat exchanger for preheating an oxidizing gas A heat exchanger useful for preheating oxidizing gases in a combustion process includes a shell having an inlet and an outlet for the ingress and egress of a first heat exchange fluid, such as a flue gas or preheated air. A first tube manifold couples an ... | 08/14/2001 |
| 6263904 | Corrosion resistant gas cylinder and gas delivery system A corrosion resistant gas cylinder and gas delivery system includes an electroless nickel-phosphorous layer overlying the inner surface of a steel alloy cylinder. The nickel-phosphorous layer has a thickness of at least about 20 micrometers and a porosity... | 07/24/2001 |
| 5998738 | Electronic control module An electronic control module (40) includes a base plate (12) bent about first and second major bend axis (27, 28). The base plate includes first and second grooves (29, 30) formed at an upper surface (15a) coextensive with the first and second major bend ... | 12/07/1999 |
| 5989398 | Calorimetric hydrocarbon gas sensor A calorimetric hydrocarbon gas sensor (10) includes an electrochemical oxygen pump (18), a sensing element (12), and a multi-layered substrate (26) separating the sensing element (12) from the electrochemical oxygen pump (18). The multi-layered substrate ... | 11/23/1999 |
| 5864205 | Gridded spacer assembly for a field emission display A gridded spacer assembly (130, 230) for a field emission display (100, 200) includes a plurality of spacers (135, 235), a focusing grid (132, 232) having a plurality of spacer apertures (133) in which the spacers (135, 235) are disposed and to which the ... | 01/26/1999 |
| 5848925 | Method for fabricating an array of edge electron emitters A method for fabricating an array (300) of edge electron emitters (530) includes the steps of: forming first and second grooves (310, 320) in first and second opposing planar surfaces (101, 102), respectively, of a supporting substrate (110) to form an ar... | 12/15/1998 |
| 5847407 | Charge dissipation field emission device A charge dissipation field emission device (200, 300, 400) includes a supporting substrate (210, 310, 410), a cathode (215, 315, 415) formed thereon, a dielectric layer (240, 340, 440) formed on the cathode (215, 315, 415) and having emitter wells (260, 3... | 12/08/1998 |
| 5842340 | Method for controlling the level of oxygen stored by a catalyst within a catalytic converter The catalyst control method of the invention continuously estimates a level of oxygen stored by a catalyst within a catalytic converter. The estimated oxygen stored by the catalyst is compared to a predetermined threshold and positive or negative deviatio... | 12/01/1998 |
| 5842339 | Method for monitoring the performance of a catalytic converter A method for monitoring the performance of a catalytic converter (34) computes the oxygen storage capacity and desorption capacity of a catalyst within the catalytic converter (34). An engine control unit (10) receives mass flow rate information of air fr... | 12/01/1998 |
| 5839274 | Method for monitoring the performance of a catalytic converter using post catalyst methane measurements A method for monitoring and controlling the performance of a catalytic converter (34) includes monitoring an exhaust gas stream from an engine (16) for the presence of methane. Upon detecting methane in the exhaust gas stream an oxygen storage level of a ... | 11/24/1998 |
| 5784245 | Solenoid driver and method for determining solenoid operational status A solenoid driver (10) capable of detecting the operational status of a solenoid (12) including the position of an armature within a solenoid coil and an operational method. The solenoid driver (10) generates a first solenoid current within the solenoid (... | 07/21/1998 |
| 5741975 | Media isolated differential pressure sensor and fluid injection method A pressure sensor (10) includes a base (12) supporting a lead frame (28) having a pressure sensing element (14) electrically coupled to the lead frame (28). The molded base (12) interlocks with first and second diaphragm mounting frames (18, 20) and toget... | 04/21/1998 |
| 5732551 | Method for monitoring the performance of a catalytic converter using mass transfer coefficients A method for monitoring the performance of a catalytic converter includes the monitoring of output from a first gas sensor (16) positioned upstream from a catalytic converter (12) and a second gas sensor (18) located at a position downstream from the cata... | 03/31/1998 |
| 5708566 | Solder bonded electronic module An electronic control module (10) includes a circuit substrate (12) containing a plurality of thermal vias (36) and a heat-generating electronic device (26) attached to the thermal vias (36). The circuit substrate (12) is attached to a mounting plate (18)... | 01/13/1998 |
| 5689059 | Selective gas sensor A selective gas sensor (10) for detecting a particular compound, or group of compounds, such as non-methane hydrocarbons, within a high temperature gas stream (12) includes an oxygen generation system (14) positioned over an oxygen diffusion region (15). ... | 11/18/1997 |
| 5689089 | Electronic control module having fluid-tight seals of a polymer material which expands when wet An electronic control module (10) includes a package substrate (12) having an interior cavity (28) through which a package lead (22) traverses. The interior cavity (28) is filled with an expandable polymer material (34). The expandable polymer material (3... | 11/18/1997 |
| 5633199 | Process for fabricating a metallized interconnect structure in a semiconductor device A process for fabricating a metallized interconnect structure in a semiconductor device includes the steps of depositing a first aluminum layer (22) into a via opening (16) in a dielectric layer (18). A doping layer (24) is deposited by high density plasm... | 05/27/1997 |
| 5616948 | Semiconductor device having electrically coupled transistors with a differential current gain A semiconductor device includes a pass transistor (28) electrically coupled to a driver transistor (16) by a common drain region (52). The pass transistor (28) includes the pass gate electrode (44) having a polycrystalline silicon layer (68). The driver t... | 04/01/1997 |
| 5589423 | Process for fabricating a non-silicided region in an integrated circuit A process for the fabrication of a non-silicided region in an integrated circuit includes the fabrication of a silicide blocking layer (24, 46, 54, 92, 112). In one embodiment, a field transistor (80) is formed by depositing a silicide blocking layer (84)... | 12/31/1996 |
| 5580823 | Process for fabricating a collimated metal layer and contact structure in a semiconductor device A process for fabricating a semiconductor device which includes forming a collimated metal layer (54) on the surface of a semiconductor substrate (24), while maintaining the temperature of the substrate preferably below about 100° C., and most preferably... | 12/03/1996 |
| 5567958 | High-performance thin-film transistor and SRAM memory cell A thin-film transistor and SRAM memory cell include thin-film source and drain regions (12, 14) separated by an opening (22) and overlying and insulating layer (11). A thin-film channel layer (16) overlies the thin-film source and drain regions (12, 14) a... | 10/22/1996 |
| 5552332 | Process for fabricating a MOSFET device having reduced reverse short channel effects A process for the fabrication of an MOSFET device includes the formation of a buffer layer (28) overlying the surface of a semiconductor substrate (14) adjacent to a gate electrode (18). A defect compensating species is diffused through the buffer layer (... | 09/03/1996 |
| 5543362 | Process for fabricating refractory-metal silicide layers in a semiconductor device A process for fabricating refractory-metal silicide layers in a semiconductor device includes the formation of a composite gate electrode (54) and a buried contact structure (56). The composite gate electrode (54) includes a refractory-metal silicide laye... | 08/06/1996 |
| 5539216 | Monolithic semiconductor body with convex structure A monolithic semiconductor body (26) resides in an opening (16) formed in an insulating layer (14). The monolithic semiconductor body (26) includes an elongated region (20) filling the opening (16) in the insulating layer (14) and contacting a semiconduct... | 07/23/1996 |
| 5536962 | Semiconductor device having a buried channel transistor A semiconductor device (10) includes first and second electrically coupled MOS transistors (16, 28) in which the current gain of the second MOS transistor (16) is greater than the current gain of the first MOS transistor (28). Higher carrier mobility is o... | 07/16/1996 |
| 5531861 | Chemical-mechanical-polishing pad cleaning process for use during the fabrication of semiconductor devices A chemical-mechanical-polishing process in which energy is imparted to a polishing pad (18) dislodging particles (46), which are removed by vacuum withdrawal to continuously clean the surface of the polishing pad (14). Energy is imparted to polishing pad ... | 07/02/1996 |
| 5527739 | Process for fabricating a semiconductor device having an improved metal interconnect structure A metal interconnect structure includes copper interface layers (24, 30) located between a refractory metal via plug (28), and first and second metal interconnect layers (16, 32). The copper interface layers (24, 30) are confined to the area of a via open... | 06/18/1996 |
| 5478436 | Selective cleaning process for fabricating a semiconductor device A selective cleaning process for fabricating a semiconductor device includes the steps of processing a semiconductor substrate (10) and introducing metal contaminants (22) by contacting the semiconductor substrate (10) with a polishing slurry during a pol... | 12/26/1995 |
| 5474947 | Nonvolatile memory process A process for fabricating an improved nonvolatile memory device includes the formation of a control gate electrode (70) which overlies a floating gate electrode (42) and is separated therefrom by an inter-level-dielectric layer (62). The control gate elec... | 12/12/1995 |
| 5467308 | Cross-point eeprom memory array A cross-point EEPROM memory array includes a semiconductor substrate (10) having first and second bit-lines (32, 34) spaced apart by a channel region (36). A control gate electrode (24) is formed by a portion of a control gate line, which overlies a first... | 11/14/1995 |
| 5464711 | Process for fabricating an X-ray absorbing mask A process for the fabrication of an X-ray absorbing mask includes providing a silicon substrate (10) having a front surface (16) and a back surface (18). A membrane layer (12) is formed on the front surface (16). In one embodiment of the invention, an etc... | 11/07/1995 |
| 5459688 | Semiconductor memory cell and fabrication process A semiconductor memory cell (10) includes first and second cross-coupled driver transistors (13, 19) each having a source-drain region and a channel region formed in a first thin-film layer (36, 36'). First and second parallel opposed wordlines (20, 22) o... | 10/17/1995 |
| 5459096 | Process for fabricating a semiconductor device using dual planarization layers An improved planarization process includes the steps of forming recessed regions (38) and elevated regions (34) in a semiconductor substrate (30). The substrate is oxidized to form an oxide liner (39) overlying the recessed regions, and a fill material (4... | 10/17/1995 |
| 5455194 | Encapsulation method for localized oxidation of silicon with trench isolation A method for the fabrication of a trench isolation region (44) includes the deposition of first, second, and third oxidizable layers (28, 34, 42). The first oxidizable layer (28) is deposited to overlie the surface of a trench (12) formed in a semiconduct... | 10/03/1995 |
| 5442235 | Semiconductor device having an improved metal interconnect structure A metal interconnect structure includes copper interface layers (24, 30) located between a refractory metal via plug (28), and first and second metal interconnect layers (16, 32). The copper interface layers (24, 30) are confined to the area of a via open... | 08/15/1995 |
| 5429989 | Process for fabricating a metallization structure in a semiconductor device A process for fabricating a metallization structure includes the formation of an interlayer (20) using an MOCVD deposition process. A metal-organic precursor, having as one component tungsten, is used to deposit the interlayer (20) onto a surface region (... | 07/04/1995 |
| 5428233 | Voltage controlled resistive device A voltage controlled resistive device is provided by coupling a vertical bipolar transistor (34) with a junction field effect transistor (36) through a well region 18, which functions as both a drain region for the junction field effect transistor (36), a... | 06/27/1995 |
| 5426315 | Thin-film transistor having an inlaid thin-film channel region A thin-film transistor having a thin-film channel region (20) inlaid in a recess (29) along the wall of a multi-layered insulating structure (14), and a gate electrode (12) electrically controlling current conduction in the thin-film channel (20) and sepa... | 06/20/1995 |
