Quotables
"I watched his countenance closely, to see if he was not deranged ... and I was assured by other senators after he left the room that they had no confidence in it."
U.S. Senator Smith of Indiana ; After seeing Samuel Morse demonstrate the telegraph.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 6069084 | Method of forming a low-k layer in an Integrated circuit This is a device and method of forming such, wherein the device has an amorphous "TEFLON" (TFE AF) layer. The device comprising: a substrate; a TFE AF 44 layer on top of the substrate; and a semiconductor layer 42 on top of the TFE AF 44 layer. The device... | 05/30/2000 |
| 6045756 | Miniaturized integrated sensor platform A miniaturized integrated sensor (50) useful for indicating the presence of a sample analyte is disclosed. The sensor (50) has a platform (52) with an upper surface (53) and a detector (62), light source (60), waveguide (58), and reflective fixtures (60,6... | 04/04/2000 |
| 6037277 | Limited-volume apparatus and method for forming thin film aerogels on semiconductor substrates An apparatus and method for forming thin film aerogels on semiconductor substrates is disclosed. It has been found that in order to produce defect~free nanoporous dielectrics with a controllable high porosity, it is preferable to substantially limit evapo... | 03/14/2000 |
| 6024923 | Integrated fluorescence-based biochemical sensor An integrated biochemical sensor (200) for detecting the presence of one or more specific samples (240) having a device platform (355) with a light absorbing upper surface and input/output pins (375) is disclosed. An encapsulating housing (357) provides a... | 02/15/2000 |
| 6020243 | Zirconium and/or hafnium silicon-oxynitride gate dielectric A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) silicon-oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel... | 02/01/2000 |
| 6020247 | Method for thin film deposition on single-crystal semiconductor substrates A method of preparing a surface for and forming a thin film on a single-crystal silicon substrate is disclosed. One embodiment of his method comprises forming an oxidized silicon layer (which may be a native oxide) on at least one region of the substrate,... | 02/01/2000 |
| 6013553 | Zirconium and/or hafnium oxynitride gate dielectric A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region ... | 01/11/2000 |
| 5963881 | Method and system for enhancing the identification of causes of variations in the performance of manufactured articles In a system (12) wherein articles are manufactured by a plurality of process steps (20, 22, & 24), a method for identifying causes of variations in performance of the manufactured articles is provided. The method includes tracking orientation data (48) fo... | 10/05/1999 |
| 5955140 | Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates This invention has enabled a new, simple thin film nanoporous dielectric fabrication method. In general, this invention uses glycerol, or another low volatility compound, as a solvent. This new method allows thin film aerogels/low density xerogels to be m... | 09/21/1999 |
| 5912456 | Integrally formed surface plasmon resonance sensor A surface plasmon resonance sensor includes a light source 10 and a polarizer 18 for producing polarized light which passes through a transparent body 12 and strikes a thin conductive film 26 disposed on the exterior surface of the body 12. The film 26 ex... | 06/15/1999 |
| 5894064 | Solution routes to metal oxide films through ester elimination reactions A method of forming a thin film of a metal oxide on a substrate by coating the substrate with a solution comprising metal-organic precursors is disclosed. This method is applicable to, e.g., forming thin films of perovskite-phase titanates, zirconates, an... | 04/13/1999 |
| 5847443 | Porous dielectric material with improved pore surface properties for electronics applications This invention provides an improved porous structure for semiconductor devices and a process for making the same. This process may be applied to an existing porous structure 28, which may be deposited, for example, between patterned conductors 24. The met... | 12/08/1998 |
