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| Number | Title | Issue Date |
| 4913647 | Air fuel ratio control A method and system for regulating and maintaining a predetermined desired fuel-air mixture for a fuel of interest as represented by a desired fuel number disclosed which utilizes a known relationship between the radiation intensity ratios of selected che... | 04/03/1990 |
| 4900448 | Membrane dehumidification The instant invention provides a method and system for dehumidifying air by microphorous organic hollow fibers having a hygroscopic liquid disposed in the pores thereof for providing a concentration gradient sufficient to provide a continuous water remova... | 02/13/1990 |
| 4895616 | Method for making thin film orthogonal microsensor for air flow A microbridge air flow sensor which has a sealed etched cavity beneath the silicon nitride diaphragm so that the cavity is not susceptible to contamination from residual films or other material accumulating within the cavity. The cavity thermally isolates... | 01/23/1990 |
| 4891977 | Microbridge sensor bonding pad design for improved adhesion An improved connector pad stack structure for use in microstructure devices having a silicon nitride surface in which the sensor metal such as platinum or Ni-Fe is eliminated from the pad bonding site and only adhesion promoting metals are used on the Si | 01/09/1990 |
| 4885914 | Coefficient of performance deviation meter for vapor compression type refrigeration systems The invention relates to a coefficient of performance deviation meter for vapor compression type refrigeration systems. The measurement of the coefficient of performance of a mechanical vapor compression refrigeration system requires that the two paramete... | 12/12/1989 |
| 4885938 | Flowmeter fluid composition correction Certain relationships among the mass flow signal the thermal conductivity, specific heat and density of the fluid measured can be used to correct a mass flowmeter measurement with respect to changes in composition of the fluid.... | 12/12/1989 |
| 4814851 | High transconductance complementary (Al,Ga)As/gas heterostructure insulated gate field-effect transistor A complementary (Al,Ga)As/GaAs heterostructure insulated gate field-effect transistor (HIGFET) approach is described in which both the n-channel and p-channel transistors utilize a two-dimensional electron (hole) gas in undoped high mobility channels to f... | 03/21/1989 |
| 4810969 | High speed logic circuit having feedback to prevent current in the output stage An improved FET capacitance driver logic circuit having an inverter feedback stage 22 connected from output to input of output FET 23 to allow the output FET to have a large capacitance charging current surge followed by a reduced conduction thereafter.... | 03/07/1989 |
| 4784721 | Integrated thin-film diaphragm; backside etch A microbridge air flow sensor having a silicon nitride diaphragm formed on the surface of a single crystal silicon wafer. A rectangular 500 angstrom thick sacrificial layer was deposited on the silicon surface before the silicon nitride to define the exac... | 11/15/1988 |
| 4783591 | Color mark sensor A color mark sensor utilizing the cumulative chromatic aberration in an extended planar gradient-index (GRIN) lens to provide unambiguous primary color separation in a continuum along the lens axis. An appropriately chosen GRIN lens length provides separa... | 11/08/1988 |
| 4762382 | Optical interconnect circuit for GaAs optoelectronics and Si VLSI/VHSIC This invention discloses an optical interconnect structure for routing and distributing optical signals on silicon chip carriers to realize high-density packaged optical interconnects for discrete GaAs optoelectronic IC's.... | 08/09/1988 |
| 4762426 | Remote passive temperature sensor A remote passive condition sensor apparatus such as a temperature or humidity sensor apparatus. A corner cube reflector at a remote location, where it is not feasible to have electrical connections or batteries, receives and reflects back radiant energy t... | 08/09/1988 |
| 4752694 | Array uniformity correction A two-dimensional bolometer array having electronic array uniformity correction. The individual resistive sensors in the bolometer array are not electrically uniform and uniformity is a requirement to permit efficient electrical readout of signals. An ele... | 06/21/1988 |
| 4739657 | Resistance with linear temperature coefficient The sensors and heater of a microbridge flow sensor are each compensated for non-linear curvature of the resistance versus temperature curve by the use of a section of permalloy in series with a section of platinum thin film resistor. The platinum exhibit... | 04/26/1988 |
| 4729000 | Low power AlGaAs/GaAs complementary FETs incorporating InGaAs n-channel gates A low power complementary (Al,Ga)As/GaAs heterostructure insulated gate field-effect transistor (HIGFET) approach is described in which the n-channel transistor utilizes an Inx Ga1-x As semiconductor gate to reduce threshold voltage ... | 03/01/1988 |
| 4706604 | Wipe-off apparatus of liquid phase epitaxy of mercury cadmium telluride In a covered graphite slider apparatus for the liquid phase epitaxial growth of mercury cadmium telluride, this invention shows the addition of an improved wipe-off arrangement positioned in tandem with the CdTe substrate upon which the HgCdTe epitaxial l... | 11/17/1987 |
| 4706100 | High temperature hetero-epitaxial pressure sensor A high-temperature hetero-epitaxial piezo-resistive pressure sensor in which an epitaxial layer of a wide-bandgap semiconductor such as GaAs is grown onto a silicon wafer and the piezoresistors are implanted into the wide-bandgap layer.... | 11/10/1987 |
| 4706061 | Composition sensor with minimal non-linear thermal gradients A gaseous composition sensor which is a microstructure device comprising a heated planar thin film diaphragm sensor member suspended over a shallow flat bottomed etched pit in a single crystal silicon substrate.... | 11/10/1987 |
| 4686758 | Three-dimensional CMOS using selective epitaxial growth A three-dimensional CMOS integrated circuit structure in which two complementary field effect transistors are fabricated in vertical alignment with one another, and in which both transistors are single crystal and share a common crystal lattice structure ... | 08/18/1987 |
| 4682503 | Microscopic size, thermal conductivity type, air or gas absolute pressure sensor A microscopic size absolute pressure sensor for air or gas of the thermal conductivity type, a silicon nitride covered silicon microchip has an elongated V-groove anisotropically etched in the silicon with a heated silicon nitride bridge element extending... | 07/28/1987 |
| 4669175 | Front-to-back alignment procedure for Burrus LED's A method for accurate front-to-back alignment of patterns onto a wafer for fabrication of multiple Burrus LED's. The front surface of the wafer has on it epitaxial layers, a dielectric layer and a metallization layer. The metallization layer includes perp... | 06/02/1987 |
| 4662058 | Self-aligned gate process for ICS based on modulation doped (Al,Ga) As/GaAs FETs A self-aligned gate process for integrated circuits based on modulation doped (Al, Ga)As/GaAs field effect transistors and in which the regions on each side of the metal silicide gate are heavily ion implanted to form the low resistance regions on either ... | 05/05/1987 |
| 4654622 | Monolithic integrated dual mode IR/mm-wave focal plane sensor A monolithic integrated focal plane sensor array having elements sensitive to IR radiation and elements sensitive to mm-wave radiation. The sensor elements of the array sensitive to mm-wave have microantennas coupled to the sensors.... | 03/31/1987 |
| 4652333 | Etch process monitors for buried heterostructures This invention describes the use of etch process monitors or indicators to improve the reproducibility of etching hourglass shaped mesas for buried heterostructure laser/amplifier structures or integrated optical components in III-V compounds (e.g. GaAs/A... | 03/24/1987 |
| 4651120 | Piezoresistive pressure sensor A piezoresisitve pressure sensor having a diaphragm of silicon nitride with a stressed resistor under the edge of the diaphragm in a single crystal supporting wafer. The signal is derived from the stress in the silicon where the diaphragm attaches to the ... | 03/17/1987 |
| 4637122 | Integrated quantum well lasers for wavelength division multiplexing An integrated quantum well laser structure which has a plurality of quantum well lasers for providing a plurality of light beams each having a different wavelength for use in wavelength division multiplexing.... | 01/20/1987 |
| 4638341 | Gated transmission line model structure for characterization of field-effect transistors The gated Transmission Line Model (GTLM) structure is a novel characterization device and measurement tool for integrated circuit process monitoring. This test structure has Schottky gates between the ohmic contacts of a TLM pattern. The gate lengths are ... | 01/20/1987 |
| 4616248 | UV photocathode using negative electron affinity effect in Alx Ga1 N A high efficiency UV responsive negative electron affinity photocathode with the long wavelength cutoff tunable over the wavelength from ~200 to ~300 nm based on Alx Ga1-x N. Negative electron affinity photocathodes for sharply enhan... | 10/07/1986 |
| 4614961 | Tunable cut-off UV detector based on the aluminum gallium nitride material system A method of preparing a UV detector of Alx Ga1-x N. Metal organic chemical vapor deposition (MOCVD) is utilized to grow AlN and then Alx Ga1-x N on a sapphire substrate. A photodetector structure is fabricated o... | 09/30/1986 |
| 4593967 | 3-D active vision sensor This invention is to a three dimensional active vision sensor. This invention uses a multifacet holographic scanner to move a laser spot across an object at high speed in a raster pattern and a digital position detector to give a highly accurate, low nois... | 06/10/1986 |
| 4592304 | Apparatus for liquid phase epitaxy of mercury cadmium telluride In a covered graphite slider apparatus for the liquid phase epitaxial growth of mercury cadmium telluride this invention shows the addition of a wipe-off well into the moving part of the slider apparatus, which well contains pieces of CdTe to assist wipe-... | 06/03/1986 |
| 4587105 | Integratable oxygen sensor An O2 sensor built on a silicon chip which has a SiO2 dielectric layer bridging over a depression in the surface of the chip. A ZrO2 layer overlies the bridge and a pair of spaced apart palladium electrodes are on the surf... | 05/06/1986 |
| 4577213 | Internally matched Schottky barrier beam lead diode An improved internally matched Schottky barrier beam lead diode for use in millimeter wave frequency circuits. In this diode device which is made on a chip, a reactive shunt loop comprising a matching inductor and series connected capacitor is fabricated ... | 03/18/1986 |
| 4577321 | Integrated quantum well lasers for wavelength division multiplexing An integrated quantum well laser structure which has a plurality of quantum well lasers for providing a plurality of light beams each having a different wavelength for use in wavelength division multiplexing.... | 03/18/1986 |
| 4564494 | Encapsulant of CdTe boules for multiblade wafering A cadmium telluride boule encapsulated with an encapsulant material consisting of about 80% by volume of powdered beta-phase calcium sulfate hemihydrate, about 20% by volume of powdered alpha-phase calcium sulfate hemihydrate and water. This specially enc... | 01/14/1986 |
| 4551394 | Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs Localized epitaxial growth of GaAs from a silicon monocrystalline substrate to provide a three-dimensional Si-GaAs structure and method. The silicon has an insulating layer deposited thereover and a window is opened through the layer to expose a small are... | 11/05/1985 |
| 4550031 | Control of Si doping in GaAs, (Al,Ga)As and other compound semiconductors during MBE growth A method of modulation doping GaAs, (Al,Ga)As and related compounds with silicon ions during molecular beam epitaxy (MBE) growth.... | 10/29/1985 |
| 4547866 | Magnetic thin film memory with all dual function films A non-volatile flat film memory with a symmetrical cell design having four magnetic films and full turn word line construction. The design provides flux closure during both store and read as well as providing memory storage in all films. The structure is ... | 10/15/1985 |
| 4532694 | Method of fabricating emitter/detector-in-a-well for the integration of electronic and optoelectronic components Integration of optoelectronic component and electronic components in a planar surface of a semi-insulating substrate such as gallium arsenide. A depression is etched into the planar surface to contain the transverse junction stripe laser structure which i... | 08/06/1985 |
| 4521290 | Thin layer electrochemical cell for rapid detection of toxic chemicals A thin-layer electrochemical cell for rapid detection of toxic chemicals and chemical agents having a large area thin-film sensing electrode in contact with a very thin layer of nonaqueous aprotic organic based electrolyte solution, and having the referen... | 06/04/1985 |
