Celebrity Inventors
Glam girl Heddy Lamar may have used her good looks to good effect on the silver screen, but she put her smarts to better use as an inventor. During World War II, she co-patented a frequency-switching system for torpedo guidance that was considered years ahead of its time.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 4911535 | Rear screen projection with twisted nematic crystals for improved viewing angle The disclosure relates to a light source positioned behind a liquid crystal display, the output from the liquid crystal being projected onto a projection screen that has random polarization, thereby permitting a wide range of vision. The screen can be a p... | 03/27/1990 |
| 4870373 | Constant phase gain control circuit The disclosure relates to a dual gate FET used in variable power amplifiers wherein a gain control circuit is provided across the dual gate electrodes whereby the voltage on one of the gate electrodes is a function of the voltage on the other gate electro... | 09/26/1989 |
| 4870346 | Distributed pseudo random sequence control with universal polynomial function generator for LSI/VLSI test systems Simple polynomial function generators are used to generate pseudo random test patterns and perform signature analysis on a per pin basis in the control logic in LSI/VLSI test systems.... | 09/26/1989 |
| 4870376 | Monolithic elastic convolver output circuit The disclosure relates to a microstrip circuit which is used to combine the energy output from the convolving plate of a surface acoustic wave (SAW) monolithic elastic convolver. The convolving plate is tapped at its two ends and a Wilkinson combiner is u... | 09/26/1989 |
| 4867841 | Method for etch of polysilicon film A process for etch of polysilicon films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of Helium and a source of Fluorine with the process chamber within the process ... | 09/19/1989 |
| 4868635 | Lead frame for integrated circuit An integrated circuit lead frame is configured so that it may be die stamped to cut lead frame leads to customize it for a particular semiconductor device bar size. Lead frame leads are cut at a specified distance from the lead frame bar pad so that a sem... | 09/19/1989 |
| 4866488 | Ballistic transport filter and device An energy filter for carriers in semiconductor devices and devices with such filters are disclosed. The filter is a superlattice and the filtering action arises from the subbands and gaps in the conduction and valence bands of the superlattice. A heteroju... | 09/12/1989 |
| 4866421 | Communications circuit having an interface for external address decoding An adapter circuit for a local area network is disclosed, which contains logic external to the protocol handler for address comparison. The adapter uses random-access memory to store the data fields arriving after the address fields in the serial input da... | 09/12/1989 |
| 4865654 | Delayed reflow alloy mix solder paste A solder paste mixture for soldering surface mount devices to a circuit board using a reflow soldering process which utilize a vapor phase furnace. The solder paste mixture has a metallic content which is 63% tin and 37% lead. The metallic content of the ... | 09/12/1989 |
| 4863558 | Method for etching tungsten Tungsten is rapidly and anisotropically etched under plasma bombardment conditions by using a feed gas mixture which includes a fluorine source (such as SF6) plus a bromine source (such as HBr), plus a hydrocarbon source (e.g., an alkyl, such a... | 09/05/1989 |
| 4861452 | Fixture for plating tall contact bumps on integrated circuit A transportable bump plating fixture and method for holding a semiconductor wafer in a face up orientation in a plating bath while plating bumps on the metallized circuitry on the wafer face. The fixture includes an elastomer pad which contacts the back o... | 08/29/1989 |
| 4862373 | Method for providing a collision free path in a three-dimensional space A method for providing a collision free safe path includes storing predetermined spatial graphs representing the set of points defining the collision free paths within that region and calculating the shortest path over the region. Each of the points in th... | 08/29/1989 |
| 4861419 | Apparatus and method for production process diagnosis using dynamic time warping Operations of a plasma etch reactor (10) are monitored to detect aberrations in etching operations. A reference end point trace is defined (62) for the etch process. Regions are defined in the reference end point trace (70) with aid of a dynamic time warp... | 08/29/1989 |
| 4859277 | Method for measuring plasma properties in semiconductor processing An apparatus and method for measuring the concentration profile of an active species across the surface of a semiconductor slice in a plasma reactor is disclosed that permits uniformity of etch and deposition across the surface of the semiconductor slice.... | 08/22/1989 |
| 4859633 | Process for fabricating monolithic microwave diodes Two-terminal active devices, such as IMPATT and Gunn diodes, are combined with passive devices in a monolithic form using a plated metal heat sink to support the active elements and a coated-on dielectric to support the passive elements. Impedance-matchin... | 08/22/1989 |
| 4858182 | High speed zero power reset circuit for CMOS memory cells A reset circuit for a CMOS memory array is disclosed wherein the voltage supply for the standard six transistor memory cell is replaced by a pair of parallel connected transistors disposed between a fixed voltage source and the memory cell. The transistor... | 08/15/1989 |
| 4857430 | Process and system for determining photoresist development endpoint by effluent analysis A system and method for determining the pattern development endpoint of a photoresist polymer during spin/spray processing of a semiconductor wafer utilizes the optical transmission of the waster developer liquid during the pattern develop process to dete... | 08/15/1989 |
| 4857140 | Method for etching silicon nitride A process for etching silicon nitride which utilizes free radicals from a remote plasma generated using a fluorine containing gas; and hydrogen; to produce an etch which is selective to selected materials, for example, silicon and silicon dioxide.... | 08/15/1989 |
| 4857132 | Processing apparatus for wafers A processing system wherein the process gas flow passages have a modified contour which reduces particle entrainment. This modified cross section increases the thickness of its stagnant boundary layer near most of a wall area of the piping, so that any pa... | 08/15/1989 |
| 4856863 | Optical fiber interconnection network including spatial light modulator A crossbar switch (200) with bifurcated optical fibers (271, . . . , 286) having equivalent ends connected to transmitters (251, . . . , 254) and receivers (261, . . . , 264) and single ends in a linear array (245) that is adjacent to a linear micro lens ... | 08/15/1989 |
| 4855017 | Trench etch process for a single-wafer RIE dry etch reactor A plasma dry etch process for trench etching in single slice RIE etch reactors wherein a selective sidewall passivation is accomplished to control the profile of the trench being etched. The process comprises methods of passivating the sidewall by passiva... | 08/08/1989 |
| 4855160 | Method for passivating wafer A high pressure processing apparatus and method which is compatible with a system wherein wafers are largely transported and processed under vacuum. The pressure vessel can be extremely small, i.e. has a total pressurized volume of which almost all interi... | 08/08/1989 |
| 4855969 | Dynamic timing reference alignment system Disclosed is a test system and a method for providing a timing function that dynamically calculates and adjusts the phase delay between an internal timing reference and an externally derived signal. This is accomplished by providing a timing generator for... | 08/08/1989 |
| 4855016 | Method for etching aluminum film doped with copper A process for etch of Copper doped Aluminum films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of BCl3, Cl2, and a source of hydrocarbons with... | 08/08/1989 |
| 4853842 | Computer memory system having persistent objects A uniform memory system for use with symbolic computers has a very large virtual address space. No separate files, not directly addressable in the address space of the virtual memory, exist. A special object, the peristent root, defines memory objects whi... | 08/01/1989 |
| 4851886 | Binary superlattice tunneling device and method A resonant tunneling diode (30) with anode (40) and cathode (32) separated by binary short-period superlattice tunneling barriers (34,38) with a quantum well (36) between is disclosed. Enhancement and depletion mode diodes are disclosed.... | 07/25/1989 |
| 4851360 | NMOS source/drain doping with both P and As A process for forming N-channel MOS sources and drains, by implanting both phosphorus and arsenic. The high diffusivity of phosphorus causes it to diffuse in advance of the bulk of the arsenic, so that, after annealling, the source/drain regions have grad... | 07/25/1989 |
| 4849370 | Anodizable strain layer for SOI semiconductor structures A silicon on insulator semiconductor structure employs a strain layer fabricated of an electrically inactive material. The strain layer comprises silicon with a germanium additive to produce a sublayer exhibiting a low breakdown voltage and thus effective... | 07/18/1989 |
| 4849068 | Apparatus and method for plasma-assisted etching An apparatus for reactive ion etching or plasma etching wherein the wafer faces downward. The process gas is supplied through a distributor which is below the wafer and has orifices pointing away from the wafer. The vacuum (exhaust) port is below the dist... | 07/18/1989 |
| 4849067 | Method for etching tungsten A fluorine based metal etch chemistry, wherein an admixture of etch products (or species which are closely related to etch products) is added during the post etch stage, i.e. during the stage when the pattern has partially cleared by overetch is not yet c... | 07/18/1989 |
| 4848090 | Apparatus for controlling the temperature of an integrated circuit package A thermoelectric heat pump is used to maintain the temperature of an integrated circuit under test. Temperature sensors placed on two sides of the integrated circuit measure and generate signals indicative of the temperature at the two surfaces, and the a... | 07/18/1989 |
| 4846928 | Process and apparatus for detecting aberrations in production process operations An improved apparatus and process for detecting aberrations in production process operations is provided. In one embodiment, operations of a plasma etch reactor (10) are monitored to detect aberrations in etching operations. A reference end-point trace (E... | 07/11/1989 |
| 4844773 | Process for etching silicon nitride film A process for etch of polysilicon films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated form a mixture of a source of Fluorine and Helium with the process chamber within the process ... | 07/04/1989 |
| 4845387 | Non-stacked ECL type and function A logic circuit which includes first and second differentially connected amplifying devices having first and second complementary output voltage nodes. Means for limiting the output voltage swing of the devices at the output nodes to a predetermined range... | 07/04/1989 |
| 4842676 | Process for etch of tungsten A process for etch of tungsten which utilizes both in situ and remote plasmas, and a gas mixture for the plasma which comprises SF6, HBr, and a source of hydrocarbons at low pressure and ambient temperature to product an etch which is both sele... | 06/27/1989 |
| 4842680 | Advanced vacuum processor A complete integrated circuit processing module, wherein multiple processing stations, each with its own vacuum isolation, are located inside a single module which is held at hard vacuum. A wafer transport arm mechanism permits interchange of wafers among... | 06/27/1989 |
| 4842687 | Method for etching tungsten A thin film metal (e.g. tungsten) is anisotropically etched under plasma bombardment conditions by using a feed gas mixture which includes a fluorine source, such as SF6, plus a bromine source, such as HBr, plus a hydrocarbon source, e.g., an a... | 06/27/1989 |
| 4842686 | Wafer processing apparatus and method A plasma reactor with in situ ultraviolet generation processing aparatus and method. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum processing chamber but is remote from the face of ... | 06/27/1989 |
| 4838289 | Apparatus and method for edge cleaning Apparatus and method for cleaning material at the outer edge of an object by applying a solvent for the material to a flat surface adjacent the edge and moving the solvent onto the edge by centrifugal force.... | 06/13/1989 |
| 4839010 | Forming an antireflective coating for VLSI metallization Method of forming an antireflective coating on a face of a semiconductor which includes forming a metal oxide layer on the face, heating the oxide layer to a temperature sufficiently high to cause the migration of free metal atoms over the surface of the ... | 06/13/1989 |
