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| Number | Title | Issue Date |
| 5514142 | Dispensing pacifier A dispensing pacifier for administering small quantifies of a liquid such as a medicine to an infant. The dispensing pacifier has a nipple member with a cavity for retaining and dispensing the liquid, and friction closure means for the nipple member. A fl... | 05/07/1996 |
| 4268848 | Preferred device orientation on integrated circuits for better matching under mechanical stress A system including in combination matched semiconductor elements in a monolithic integrated circuit together with an inexpensive encapsulation. Good electrical matching of individual components in an integrated circuit is achieved by predetermined placeme... | 05/19/1981 |
| 4200463 | Semiconductor device manufacture using photoresist protective coating A protective coating composition for photoresist layers comprising an aqueous solution of a vinyl alcohol polymer, at least one surfactant having wetting properties and at least one surfactant having lubricant properties is disclosed. An improved process ... | 04/29/1980 |
| 4191898 | High voltage CMOS circuit A CMOS circuit having high voltage capability is provided. At least one P channel transistor is coupled between a first voltage node and an output of the circuit. At least two N channel transistors are coupled in series between the output of the circuit a... | 03/04/1980 |
| 4187599 | Semiconductor device having a tin metallization system and package containing same An improved metallization system for semiconductor substrates comprising successive layers of at least one barrier metal and tin is disclosed. A semiconductor package comprising a housing of impervious material, a semiconductor device having the metalliza... | 02/12/1980 |
| 4171989 | Contact for solar cells An improved solar energy device has a body of semiconductor material of a first conductivity type with a region of a second conductivity type formed in the body and extending to its surface. A current collection metallization pattern is disposed on the se... | 10/23/1979 |
| 4137123 | Texture etching of silicon: method A surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of ... | 01/30/1979 |
| 4132550 | Photoresists with particles less than one micron A germanium mesa transistor is fabricated having an epitaxially grown base region and an aluminum alloy emitter in the epitaxially grown layer spaced from the collector junction, and having a gold-comprising base electrode surrounding the emitter and clos... | 01/02/1979 |
| 4131488 | Method of semiconductor solar energy device fabrication This disclosure relates to a semiconductor solar energy device which is of the PN-type and utilizes a dielectric anti-reflective coating on the side of the device that faces the sunlight. The fabrication techniques used in making this semiconductor device... | 12/26/1978 |
| 4125415 | Method of making high voltage semiconductor structure A semiconductor p-n junction structure with improved blocking voltage capability. The improvement results from the addition of a doped layer with limited total doping to the main p-n junction. Such a structure is suitable for diodes, transistors, thyristo... | 11/14/1978 |
| 4119446 | Method for forming a guarded Schottky barrier diode by ion-implantation An improved method for forming a guard ring Schottky barrier diode using ion implantation. Diodes formed in accordance with this method require less area but exhibit breakdown voltage comparable to known prior art guarded Schottky barrier diodes. The meth... | 10/10/1978 |
| 4100563 | Semiconductor magnetic transducers Magnetically sensitive semiconductor elements suitable for fabrication in monolithic integrated circuits are disclosed. The elements comprise a semiconductor region of one conductivity type with contact means for providing current flow generally parallel ... | 07/11/1978 |
| 4097834 | Non-linear resistors Non-linear resistors for use as protective devices in electronic circuits. Compositions and methods are disclosed which enable the fabrication of non-linear resistors compatible with other electronic devices in monolithic form. The non-linear resistors di... | 06/27/1978 |
| 4093958 | Semiconductor device assembly with improved fatigue resistance A semiconductor diode package which permits improved thermal and mechanical connection in soldered assemblies. Structural features which result in this improvement comprise double contacting studs having tapered end portions and an area somewhat larger th... | 06/06/1978 |
| 4090495 | Solar energy collector A solar energy collector comprising a collector plate having a solar energy absorbing surface; a first network of intersecting walls disposed on said collector plate and forming a plurality of cavities thereon; and a second network of three-dimensional me... | 05/23/1978 |
| 4087314 | Bonding pedestals for semiconductor devices A metallization system and process for forming bonding pedestals suitable for subsequent gang-bonding of multileaded semiconductor devices. The metallurgical components are selected for corrosion resistance and permit the use of selective etchants for yie... | 05/02/1978 |
| 4082604 | Semiconductor process A process for improving the continuity of overlayers above an aluminum metallization stripe on a semiconductor device which includes the step of forming a conversion coating on the surface of the aluminium metallization. The conversion coating has a highe... | 04/04/1978 |
| 4071397 | Silicon metallographic etch A metallographic etch is disclosed which removes silicon at a very low rate. The removal of the silicon at a low rate means that the etch is highly controlled. Additional characteristics of the metallographic etch are that it is non-selective and it remov... | 01/31/1978 |
| 4070689 | Semiconductor solar energy device This disclosure relates to a semiconductor solar energy device which is of the PN-type and utilizes a dielectric anti-reflective coating on the side of the device that faces the sunlight. The fabrication techniques used in making this semiconductor device... | 01/24/1978 |
| 4064523 | High-voltage bipolar transistor for integrated circuits Combined junction and metallization morphology for achieving high-voltage capability in a shallow integrated bipolar transistor. The improvement comprises closely spaced emitter and base metallization in conjunction with a convexity in the surface portion... | 12/20/1977 |
| 4053923 | Integrated logic elements with improved speed-power characteristics Transistor logic elements with improved switching speed at a given power. The improvement arises from shunting the current-source transistor in a two-transistor gate by a resistor. The integrated embodiment requires no more area than the conventional stru... | 10/11/1977 |
| 4047976 | Method for manufacturing a high-speed semiconductor device A method for manufacturing high speed semiconductor devices by selectively reducing the minority carrier lifetime in regions susceptible to minority carrier charge storage. The selective reduction is achieved by implanting ions of low atomic weight into t... | 09/13/1977 |
| 4047218 | Semiconductor devices with improved turn-off characteristics Semiconductor devices, with especial reference to transistors with reduced turn-off times. This improvement includes a low-barrier height metal contact to one of the lightly-doped regions of the device as a replacement for the conventional heavily-doped r... | 09/06/1977 |
| 4026736 | Integrated semiconductor structure with combined dielectric and PN junction isolation including fabrication method therefor This disclosure is directed to an integrated semiconductor structure with combined dielectric and PN junction isolation including the fabrication method therefor wherein a compensating P type channel is formed adjacent to the dielectric side isolation acr... | 05/31/1977 |
| 4027053 | Method of producing polycrystalline silicon ribbon A method of producing a ribbon of polycrystalline silicon, which includes contacting a moving surface carrying a layer of particulate semiconductor silicon, with a gaseous silicon source, is disclosed. The gaseous silicon source permeates the layer of par... | 05/31/1977 |
| 4024596 | Apparatus for cleaning slices of material Both sides of thin slices of material are cleaned simultaneously in the apparatus of this invention. A slice of material rotates about its axis as it passes between opposed rotatable cleaning surfaces. The apparatus includes a stop which maintains the sli... | 05/24/1977 |
| 4010290 | Method of fabricating an ensulated gate field-effect device An insulated gate field-effect transistor is fabricated to include an improved insulation layer comprising a film of silicon dioxide covered with a film of silicon nitride. The method of fabrication includes the thermal oxidation of a semiconductor silico... | 03/01/1977 |
| 4004949 | Method of making silicon solar cells Solar cells having rounded edges are provided by ion implantation of a semiconductor body having rounded edges. Individual cells can be fabricated or a continuous ribbon of semiconductor material, the ribbon having rounded edges, can be subjected to ion i... | 01/25/1977 |
| 4004046 | Method of fabricating thin monocrystalline semiconductive layer on an insulating substrate An extremely thin monocrystalline semiconductive layer over an electrical insulator is disclosed, as well as its method of fabrication. The semiconductive layer is of high quality to provide an electrically uniform substrate for fabrication of semiconduct... | 01/18/1977 |
| 3989800 | Alkali metal gold cyanide method This disclosure relates to a method for preparing alkali metal gold cyanide which has been found to be particularly useful in gold electroplating operations in the semiconductor industry in order to provide electrical contacts to semiconductor devices. In... | 11/02/1976 |