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| Number | Title | Issue Date |
| 7844992 | Video on demand server system and method A Video-on-Demand Server architecture transmits a plurality of pre-coded programs having different bit rates across a fixed bandwidth channel. For each program, a generator generates a plurality of different bit rate representations for each program. Each generator ... | 11/30/2010 |
| 7808556 | Image processing device The invention provides a video system comprising at least one input for receiving incoming video data and at least one output for delivering outgoing video data to a display device. The system further comprises at least one processor for converting the incoming vide... | 10/05/2010 |
| 7805053 | Exploitation of discontinuity indicator for trick mode operation A system and a method for modifying a stream of multimedia content to implement trick mode playback functions in MPEG receivers that do not follow general MPEG trick mode implementation recommendations. The system can include a processor that sets a discontinuity in... | 09/28/2010 |
| 7783155 | Method and system for detecting weak or invalid signals in data streams There is provided a method for detecting signal conditions for Motion Picture Experts Group (MPEG) streams. Alternate-mode flags and valid frames within the MPEG streams are detected within a pre-defined search window. An indication that a valid signal is detected i... | 08/24/2010 |
| 7782809 | Method for extending communications protocols over a distance A communications system (30) enables two communications devices (10, 12) to communicate with each other over an extended distance using a limited range communication protocol, such as the IrDA or Bluetooth protocol. The communications system includes a... | 08/24/2010 |
| 7768896 | Optical scanner with synchronous sampling The present invention relates to a scanner for optical storage media with an improved signal-to-noise ratio. In the case of an optical scanner according to the invention having a light source for generating a light beam for reading out data stored on an optical stor... | 08/03/2010 |
| 7761048 | Technique for video broadcasting in wireless LAN A wireless Local Area Network provides data service through a data LAN and also provides video broadcast service through a video LAN. A wireless LAN subscriber accesses the video LAN through one of a plurality of Video Access Points (VAPs) that broadcast multiple vi... | 07/20/2010 |
| 7728950 | Anticamcorder media projection using enhanced frame rate A method for presenting video content including displaying the video content at an enhanced frame rate selectively modified to interfere with a recording of the video content by a camcorder. For example, the video content can be displayed at a frame rate of 54 pictu... | 06/01/2010 |
| 7409906 | Optical sensor apparatus and method for sensing ink errors in optical disk manufacturing An apparatus, system and method for detecting ink errors in optical disk printing are provided. The apparatus, system and method include a sensor mount structure and a plurality of optical sensors mounted on the mount structure and in registration with a print table... | 08/12/2008 |
| 7145347 | Method and apparatus for measuring transfer characteristics of a semiconductor device A method and apparatus for measuring alternating current (AC) and direct current (DC) characteristics of a plurality of semiconductor devices. A ring oscillator generates pulses to drive the plurality of semiconductor devices under test. Current/Voltage (IV) and tra... | 12/05/2006 |
| 7109539 | Multiple-bit magnetic random access memory cell employing adiabatic switching A multiple-bit memory cell for use in a magnetic random access memory circuit includes a first adiabatic switching storage element having a first anisotropy axis associated therewith and a second adiabatic switching storage element having a second anisotropy axis as... | 09/19/2006 |
| 7106620 | Memory cell having improved read stability A memory cell for use in a memory array includes a storage element for storing a logical state of the memory cell, a write circuit and a read circuit. The write circuit is operative to selectively connect a first node of the storage element to at least a first write... | 09/12/2006 |
| 7105360 | Low temperature melt-processing of organic-inorganic hybrid The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining an solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature o... | 09/12/2006 |
| 7087471 | Locally thinned fins In a FinFET integrated circuit, the fins are formed with a reduced body thickness in the body area and then thickened in the S/D area outside the body to improve conductivity. The thickening is performed with epitaxial deposition while the lower portion of the gates... | 08/08/2006 |
| 7085658 | Method and apparatus for rapid inline measurement of parameter spreads and defects in integrated circuit chips A method and apparatus for monitoring a plurality of semiconductor devices is disclosed. At least one array of 2n semiconductor circuits is provided. A clock ring oscillator provides a clock signal. The clock signal drives a frequency divider followed by ... | 08/01/2006 |
| 7068865 | Method and apparatus for thermo-optic modulation of optical signals The present invention is a method and an apparatus for thermo-optic control of optical signals using photonic crystal structures. In one embodiment, a first portion of a split signal is modulated by propagating the signal through a photonic crystal waveguide in whic... | 06/27/2006 |
| 7057216 | High mobility heterojunction complementary field effect transistors and methods thereof In all representative embodiments presented, the Ge concentration in the source and drain 10 and the SiGe epitaxial channel layer 20 is in the 15% to 50% range, preferably between about 20% to 40%. The SiGe thicknesses in the source/drain 10 are... | 06/06/2006 |
| 7041607 | Method for fabricating crystalline-dielectric thin films and devices formed using same This invention describes a new method for forming and depositing thin films of crystalline dielectric materials. The present technique uses chemical synthesis to control the granularity and thickness of the dielectric films. This method has several key advantages ov... | 05/09/2006 |
| 7037834 | Constant emissivity deposition member A deposition member adapted for discharging a deposition material during a deposition process can acquire a coating during the deposition. Such an initial emissivity value is selected for the deposition member, before any of the coating became deposited, that the em... | 05/02/2006 |
| 7034362 | Double silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) structures A SOI MOSFET structure having a reduced step height between the various semiconductor layers without adversely affecting the junction capacitance of the semiconductor device formed on the uppermost semiconductor layer as well as a method of fabricating the same are ... | 04/25/2006 |
| 7034519 | High frequency measurement for current-in-plane-tunneling An improved method and apparatus for determining a property based upon at least two measurements uses simultaneous probe signals having two different frequencies. The probe signals are produced simultaneously such that the position of the probes is identical when th... | 04/25/2006 |
| 7021124 | Method and apparatus for detecting leaks in a fluid cooling system One embodiment of the present method and apparatus for detecting leaks in a fluid cooling system enables a user to rapidly detect fluid leaks in the vicinity of a microprocessor chip or other delicate item. In one embodiment, the invention comprises a detector and a... | 04/04/2006 |
| 7023057 | CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bonding A method in which semiconductor-to-semiconductor direct wafer bonding is employed to provide a hybrid substrate having semiconductor layers of different crystallographic orientations that are separated by a conductive or insulating interface is provided. Also provid... | 04/04/2006 |
| 7002209 | MOSFET structure with high mechanical stress in the channel The present invention provides a semiconducting device including at least one gate region including a gate conductor located on a surface of a substrate, the substrate having an exposed surface adjacent the gate region; a silicide contact located adjacent the expose... | 02/21/2006 |
| 7002194 | Via AP switching A magnetic storage structure comprises a first magnetic layer; a second magnetic layer; and a nonmagnetic spacer layer disposed between the first and second layers for coupling the first and second layers to be parallel in a zero field condition. According to anothe... | 02/21/2006 |
| 6975555 | Magnetic random access memory using memory cells with rotated magnetic storage elements A magnetic random access memory circuit comprises a plurality of magnetic memory cells, each of the memory cells including a magnetic storage element having an easy axis and a hard axis associated therewith, and a plurality of column lines and row lines for selectiv... | 12/13/2005 |
| 6960782 | Electronic devices with fullerene layers Described is an electronic device comprising a junction formed between a first fullerene layer having a first doping concentration and a second fullerene layer having a second doping concentration different from the first doping concentration. The first doping conce... | 11/01/2005 |
| 6958929 | Sensor compensation for environmental variations for magnetic random access memory A compensation system for an array of magnetic memory cells measures local operating conditions and compensates for changes in the operating characteristics of the magnetic memory cells in the array that result from the changes in the operating conditions. The magne... | 10/25/2005 |
| 6958502 | Magnetic random access memory cell A memory cell for use in a magnetic random access memory (MRAM) circuit includes at least first and second transistors formed in a semiconductor layer. A first insulating layer is formed on at least a portion of the first and second transistors. The memory cell furt... | 10/25/2005 |
| 6949397 | Fabrication of silicon micro mechanical structures A method for protecting a material of a microstructure comprising said material and a noble metal layer against undesired galvanic etching during manufacture comprises forming on the structure a sacrificial metal layer having a lower redox potential than said materi... | 09/27/2005 |
| 6943444 | Cooling of surface temperature of a device A structure (microduct) for temperature management (e.g., cooling) of the surface temperature of an electronic device (e.g., a microprocessor). In an embodiment of the present invention, the system includes an upper plate , wherein the upper plate has a bottom surfa... | 09/13/2005 |
| 6943571 | Reduction of positional errors in a four point probe resistance measurement A system and method for measuring a resistance or a resistance per square, Rsq, of a material having a surface using a multi-point probe including four or more collinear contact points placed in the interior of the sample, the method including: making a f... | 09/13/2005 |
| 6935364 | Magnetically-operated relief valves A valve comprising a housing having an inlet and spaced therefrom an outlet, a passageway extending between the inlet and the outlet, and a mechanism located in the passageway for controlling the flow of a fluid between the inlet and the outlet, the mechanism includ... | 08/30/2005 |
| 6883033 | System and method for regulating incoming traffic to a server farm A system and method for controlling the rates at which application workload, e.g., TCP connection requests, is admitted to a collection of servers, such as a server farm of an application service provider (ASP) that hosts Internet World Wide Web (WWW) sites of vario... | 04/19/2005 |
| 6875661 | Solution deposition of chalcogenide films A method of depositing a film of a metal chalcogenide. The first of these methods includes the steps of: contacting at least one metal chalcogenide, a hydrazine compound and optionally, an elemental chalcogen, to produce a solution of a hydrazinium-based precursor o... | 04/05/2005 |
| 6857857 | Reciprocating machines A reciprocating machine such as a vacuum pump includes a cylinder in which a reciprocating piston is disposed for reciprocating movement. A variable voltage driver is provided for driving the piston and a vibration sensor is provided for sensing contact between the ... | 02/22/2005 |
| 6857025 | Highly scalable system and method of regulating internet traffic to server farm to support (min,max) bandwidth usage-based service level agreements A highly scalable system and method for supporting (mim,max) based Service Level Agreements (SLA) on outbound bandwidth usage for a plurality of customers whose applications (e.g.,Web sites) are hosted by a server farm that consists of a very large number of servers... | 02/15/2005 |
| 6833573 | Curvature anisotropy in magnetic bits for a magnetic random access memory A magnetic memory cell that uses a curved magnetic region to create magnetic anisotropy is provided by the present invention. The magnetic memory cell is created from a free magnetic layer, a barrier layer and a reference magnetic layer. The magnetic layers are cons... | 12/21/2004 |
| 6815296 | Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control A method of forming a silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) device is provided. The SOI MOSFET device includes a polysilicon back-gate which controls the threshold voltage of a polysilicon-containing front-gate. The ba... | 11/09/2004 |
| 6815278 | Ultra-thin silicon-on-insulator and strained-silicon-direct-on-insulator with hybrid crystal orientations The invention provides integrated semiconductor devices that are formed upon an SOI substrate having different crystal orientations that provide optimal performance for a specific device. Specifically, an integrated semiconductor structure including at least an SOI ... | 11/09/2004 |
