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| Number | Title | Issue Date |
| 8153833 | Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N... | 04/10/2012 |
| 7964746 | Copper precursors for CVD/ALD/digital CVD of copper metal films Copper precursors useful for depositing copper or copper-containing films on substrates, e.g., microelectronic device substrates or other surfaces. The precursors includes copper compounds of various classes, including copper borohydrides, copper compounds with cycl... | 06/21/2011 |
| 7910765 | Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N... | 03/22/2011 |
| 7887883 | Composition and method for low temperature deposition of silicon-containing films This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., | 02/15/2011 |
| 7862857 | Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, ... | 01/04/2011 |
| 7694691 | Gas delivery system with integrated valve manifold functionality for sub-atmospheric and super-atmospheric pressure applications A gas cabinet including an enclosure containing at least one gas supply vessel and flow circuitry coupled to the gas supply vessel(s). The flow circuitry is constructed and arranged to flow dispensed gas from an on-stream gas supply vessel to multiple sticks of the ... | 04/13/2010 |
| 7427346 | Electrochemical drive circuitry and method An electrochemical drive circuitry and method, such as may be employed in electroplating bath chemical monitoring. A microcontroller can be utilized to selectively apply galvanostatic or potentiostatic conditions on the electrochemical cell, for measurement of respo... | 09/23/2008 |
| 7344589 | Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, ... | 03/18/2008 |
| 7253002 | Fluid storage and dispensing vessels having colorimetrically verifiable leak-tightness, and method of making same A chemical storage and dispensing vessel having associated therewith a colorimetric member that is effective to change color in exposure to leakage of a gas contained in the vessel. The colorimetric member may be constituted by a film, e.g., of a shrink-wrap charact... | 08/07/2007 |
| D545393 | Rectangular parallelepiped fluid storage and dispensing vessel | 06/26/2007 |
| 7223352 | Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source, an aluminum ... | 05/29/2007 |
| 7208427 | Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing Metalorganic precursors of the formula: (R1R2N)a−bMXb wherein: M is the precursor metal center, selected from the group of Ta, Ti, W, Nb, Si, Al and B; a is a number equal to the valence of M; 1≦bâ‰... | 04/24/2007 |
| 7198815 | Tantalum amide complexes for depositing tantalum-containing films, and method of making same Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microele... | 04/03/2007 |
| 7193187 | Feedback control system and method for maintaining constant resistance operation of electrically heated elements The present invention relates to a system and method for controlling electrical heating of an element to maintain a constant electrical resistance, by adjusting electrical power supplied to such element according to an adaptive feedback control algorithm, in which a... | 03/20/2007 |
| 7157051 | Sampling management for a process analysis tool to minimize sample usage and decrease sampling time A method and system for analysis of additives in electrolysis plating solutions, using a flow management system that minimizes loss of plating solutions and decreases sampling time. The system includes at least one analysis chamber, a sampling duct connected to proc... | 01/02/2007 |
| 7153690 | Real-time component monitoring and replenishment system for multicomponent fluids A multicomponent fluid composition monitoring and compositional control system, in which a component analysis is effected by titration or other analytical procedure, for one or more components of interest, and a computational means then is employed to determine and ... | 12/26/2006 |
| 7129519 | Monitoring system comprising infrared thermopile detector The present invention relates to a semiconductor processing system that employs infrared-based thermopile detector for process control, by analyzing a material of interest, based on absorption of infrared light at a characteristic wavelength by such material. Specif... | 10/31/2006 |
| 7119052 | Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers A composition including supercritical fluid and at least one additive selected from fluoro species, and primary and/or secondary amines, optionally with co-solvent, low k material attack-inhibitor(s) and/or surfactant(s). The composition has particular utility for c... | 10/10/2006 |
| 7119418 | Supercritical fluid-assisted deposition of materials on semiconductor substrates Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be... | 10/10/2006 |
| 7108771 | Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-... | 09/19/2006 |
| 7080545 | Apparatus and process for sensing fluoro species in semiconductor processing systems A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a ... | 07/25/2006 |
| 7067616 | Polytetrafluoroethylene treatment One or more PTFE films are heated to greater than 150 degrees centigrade (C) and for a time greater than 20 hours, then the PTFE films are cooled. The PTFE films may be heated to temperatures greater than 200° C. and less than 250° C. and most preferably heated to... | 06/27/2006 |
| 7063097 | In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration Apparatus and method for delivery of dilute active fluid, e.g., to a downstream active fluid-consuming process unit of a semiconductor manufacturing plant. The delivery system includes an active fluid source, a diluent fluid source, a fluid flow metering device for ... | 06/20/2006 |
| 7058519 | Photometrically modulated delivery of reagents A process system adapted for processing of or with a material therein. The process system includes: a sampling region for the material; an infrared photometric monitor constructed and arranged to transmit infrared radiation through the sampling region and to respons... | 06/06/2006 |
| 7051749 | Gas delivery system with integrated valve manifold functionality for sub-atmospheric and super-atmospheric pressure applications A gas cabinet including an enclosure containing at least one gas supply vessel and flow circuitry coupled to the gas supply vessel(s). The flow circuitry is constructed and arranged to flow dispensed gas from an on-stream gas supply vessel to multiple sticks of the ... | 05/30/2006 |
| 7048785 | Adsorbents for low vapor pressure fluid storage and delivery A fluid storage and delivery system utilizing a porous metal matrix that comprises at least one Group VIIIB metal therein. In one embodiment, the porous metal matrix forms a solid-phase metal adsorbent medium, with an average pore diameter of from about 0.5 nm to ab... | 05/23/2006 |
| 7029373 | Chemical mechanical polishing compositions for metal and associated materials and method of using same A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a... | 04/18/2006 |
| 7030168 | Supercritical fluid-assisted deposition of materials on semiconductor substrates Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be... | 04/18/2006 |
| 7025234 | Apparatus and method for dispensing high-viscosity liquid The present invention relates to apparatus and method for re-circulating high viscosity liquids. The apparatus comprises a recirculating probe coupled to a fluid storage and dispensing vessel by a connector, and the recirculating probe comprises: (a) a dip tube defi... | 04/11/2006 |
| 7018448 | Gas cabinet including integrated effluent scrubber A gas cabinet assembly for dispensing of gas to a process facility such as a semiconductor manufacturing tool. A purge gas dry scrubber is integrated with the gas flow circuitry and a venturi pump in the gas cabinet. Purge gas is flowed through the flow circuitry in... | 03/28/2006 |
| 7012292 | Oxidative top electrode deposition process, and microelectronic device structure A method of preventing oxygen deficiency in a ferroelectric or high ε film material having a top electrode layer deposited thereon. Process conditions are employed that either enable the top electrode layer to be formed without oxygen abstraction from the ferroelec... | 03/14/2006 |
| 7005303 | Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices A low temperature CVD process for deposition of bismuth-containing ceramic thin films suitable for integration to fabricate ferroelectric memory devices. The bismuth-containing film can be formed using a tris(β-diketonate) bismuth precursor. Films of amorphous SBT ... | 02/28/2006 |
| 6991671 | Rectangular parallelepiped fluid storage and dispensing vessel A fluid storage and dispensing apparatus including a fluid storage and dispensing vessel having a rectangular parallelepiped shape, and an integrated gas cabinet assembly including such fluid storage and dispensing apparatus and/or a point-of-use ventilation gas scr... | 01/31/2006 |
| 6989457 | Chemical vapor deposition precursors for deposition of tantalum-based materials Tantalum precursors suitable for chemical vapor deposition of tantalum-containing material, e.g., tantalum, TaN, TaSiN, etc., on substrates. The tantalum precursors are substituted cyclopentadienyl tantalum compounds. In one aspect of the invention, such compounds a... | 01/24/2006 |
| 6989358 | Supercritical carbon dioxide/chemical formulation for removal of photoresists A photoresist cleaning composition for removing photoresist and ion implanted photoresist from semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2) and alcohol for use in removing photoresist that is not ion-implanted. Whe... | 01/24/2006 |
| 6984417 | Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, ... | 01/10/2006 |
| 6984299 | Methods for determining organic component concentrations in an electrolytic solution The present invention relates to a method and apparatus for determining organic additive concentrations in a sample electrolytic solution, preferably a copper electroplating solution, by measuring the double layer capacitance of a measuring electrode in such sample ... | 01/10/2006 |
| 6967169 | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The fo... | 11/22/2005 |
| 6960675 | Tantalum amide complexes for depositing tantalum-containing films, and method of making same Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microele... | 11/01/2005 |
| 6954560 | Attenuated total reflection spectroscopic analysis of organic additives in metal plating solutions The present invention relates to method and apparatus for determining concentrations of organic additives in metal plating solutions, based on infrared spectroscopy, and more specifically attenuated total reflection infrared spectroscopy (ATR-IR). ... | 10/11/2005 |
