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| Number | Title | Issue Date |
| 5703979 | Cylindrical fiber probe devices This invention involves a fiber probe device and a method of making it. The probe includes a relatively thick upper cylindrical region, typically in the form of a solid right circular cylinder, terminating in a tapered region that terminates in a relative... | 12/30/1997 |
| 5699105 | Curbside circuitry for interactive communication services Only one or only a few channels are sent at a time from circuitry located in a curbside box, via a link such as either a coaxial or a fiber cable, into a customer's home TV set or personal computer. However, many more than a few channels are delivered to ... | 12/16/1997 |
| 5636002 | Auxiliary mask features for enhancing the resolution of photolithography This invention involves an optical system in which optical radiation containing a wavelength λ is directed onto a patterned mask, in order to form an image feature on a photoresist layer located on the image plane of the system. The patterned mask has a ... | 06/03/1997 |
| 5633103 | Self-aligned alignment marks for phase-shifting masks A phase-shifting optical lithographic mask has a set of phase shifting features and a set of alignment marks, all having a common thickness and being made of a common material, such as chromium oxynitride, that is partially transparent to optical radiatio... | 05/27/1997 |
| 5625449 | Apparatus for simultaneously measuring the thickness of, and the optical intensity transmitted through, a sample body A portion of a surface of a sample body is arranged to receive an incident optical beam having an optical intensity I0. On an opposing surface of the sample body is located an optical detector which senses the intensity I of the resulting optic... | 04/29/1997 |
| 5600146 | Charged particle beam multiple-pole deflection control circuitry Circuitry that controls a multiple-plate charged particle beam deflection arrangement includes a Digital Signal Processor (DSP) acting through a separate accumulating Arithmetic Logic Unit (ALU) connected to each of the plates. For each line to be scanned... | 02/04/1997 |
| 5570441 | Cylindrical fiber probes and methods of making them This invention involves a fiber probe device and a method of making it. The probe includes a relatively thick upper cylindrical portion, typically in the form of a solid fight circular cylinder, terminating in a tapered portion that terminates in a relati... | 10/29/1996 |
| 5550397 | Metal oxide semiconductor transistors having a polysilicon gate electrode with nonuniform doping in source-drain direction The gate electrode of a polysilicon gate MOS transistor--the transistor having either a thin film polysilicon substrate or a bulk monocrystalline substrate--has a pair of contiguous regions: a heavily doped gate electrode region near the source, and a lig... | 08/27/1996 |
| 5538819 | Self-aligned alignment marks for phase-shifting masks A phase-shifting optical lithographic mask is made by a method that produces a set of phase shifting features (11) located in phase-shifting areas and a set of reinforced alignment marks (13, 33) located in alignment areas of the mask. Both of these sets ... | 07/23/1996 |
| 5531343 | Cylindrical fiber probe devices and methods of making them This invention involves a fiber probe device and a method of making it. The probe includes a relatively thick upper cylindrical region, typically in the form of a solid right circular cylinder, terminating in a tapered region that terminates in a relative... | 07/02/1996 |
| 5519350 | Circuitry for delivering a signal to different load elements located in an electronic system In an electronic system such as an integrated circuit having a number of destination loads such as logic gates, signal is distributed along typically a zero'th level (e.g., polysilicon) electrical transmission line from an input terminal to the destinatio... | 05/21/1996 |
| 5486263 | Etching a diamond body with a molten or partially molten metal A diamond body, such as a CVD diamond film, is etched by immersion of the body in a molten or partially molten metal, such as the rare earth metal La or Ce. While the body is being etched, various portions of a major surface of the body can be protected f... | 01/23/1996 |
| 5481205 | Temporary connections for fast electrical access to electronic devices A given testing substrate for fast-testing many integrated-circuit electronic devices, one after the other, has a set of mutually insulated collated wiring areas that can be aligned with solder-bump I/O pads of the electronic devices. At the surface of ea... | 01/02/1996 |
| 5480046 | Fiber probe fabrication having a tip with concave sidewalls A probe device is fabricated from a glass fiber segment by first isotropically etching only a portion of the diameter of only a bottom region thereof. Next, the bottom region is cleaved, to produce a cleaved bottom endface. Then the cleaved endface and a ... | 01/02/1996 |
| 5480049 | Method for making a fiber probe device having multiple diameters A fiber probe device includes a fiber segment that has at least three sections. An uppermost section has the largest diameter; an intermediate section has an intermediate diameter, and a lowest section (tip) has the smallest diameter. The presence of the ... | 01/02/1996 |
| 5473512 | Electronic device package having electronic device boonded, at a localized region thereof, to circuit board An electronic device, such as an integrated circuit chip or a multichip module, is held in place overlying a circuit board, with which it is thermal expansion mismatched, by three or more localized rigid support elements. The bottom surface of the chip is... | 12/05/1995 |
| 5461333 | Multi-chip modules having chip-to-chip interconnections with reduced signal voltage level and swing A multi-chip module is composed of two or more integrated-circuit chips located on a substrate such as a dielectrically coated silicon substrate. The chips are interconnected by means of transmission wiring lines. At least some of the chips contain one or... | 10/24/1995 |
| 5442205 | Semiconductor heterostructure devices with strained semiconductor layers A heterostructure includes a stained epitaxial layer of either silicon or germanium that is located overlying a silicon substrate, with a spatially graded Gex Si1-x epitaxial layer overlain by a ungraded Gex.sbsb.0 Si... | 08/15/1995 |
| 5407532 | Self-aligned method of fabrication closely spaced apart metallization lines Parallel metallization lines for a substrate of an electronic device, such as complementary bit (B and B) lines for an SRAM cell array, are formed by: forming a uniformly thick aluminum layer with an underlying and overlying dielectric oxide layer, the un... | 04/18/1995 |
| 5405721 | Phase-shifting lithographic masks having phase-shifting layers of differing compositions A phase-shifting lithographic mask, for use in conjunction with optical radiation of wavelength λ, has a transparent substrate upon which are successively located a bottom (2m+1)π radian phase-shifting layer and a patterned top (2n+1)π radian phase-shi... | 04/11/1995 |
| 5395741 | Method of making fiber probe devices using patterned reactive ion etching A fiber probe is formed from a cladded optical fiber segment by isotropically etching a lower portion of the fiber segment, followed by cleaving the resulting etched lower portion. The resulting cleaved endface of the fiber segment is then coated with a p... | 03/07/1995 |
| 5394500 | Fiber probe device having multiple diameters A fiber probe device includes a fiber segment that has at least three sections. An uppermost section has the largest diameter; an intermediate section has an intermediate diameter, and a lowest section (tip) has the smallest diameter. The presence of the ... | 02/28/1995 |
| 5381125 | Spinodally decomposed magnetoresistive devices A magnetoresistive medium for sensing magnetic fields is formed by a metallic alloy that contains spinodally decomposed ferromagnetic particles having at least one thickness dimension equal to or less than approximately 0.01 μm.... | 01/10/1995 |
| 5358827 | Phase-shifting lithographic masks with improved resolution In order to print an isolated feature having a width W in a photoresist layer using an optical radiation imaging system whose lateral magnification is equal to m, a phase-shifting mask is used having a corresponding isolated feature. In one embodiment thi... | 10/25/1994 |
| 5338626 | Fabrication of phase-shifting lithographic masks A phase-shifting lithographic mask is fabricated, in one embodiment, by using a resist layer that is negative tone with respect to a (patterned) electron beam and is positive tone with respect to a (flood) mid-ultraviolet beam, with the tone of the electr... | 08/16/1994 |
| 5328550 | Thinning a diamond body by means of molten rare-earth-containing alloys A diamond body, such as a CVD diamond film, is thinned by placing the body--at an elevated temperature and under pressure--in contact with a molten or partially molten alloy of a rare earth metal and a metallic impurity that lowers the melting point of th... | 07/12/1994 |
| 5320918 | Optical lithographical imaging system including optical transmission diffraction devices In an optical lithographical system (e.g., 100) for printing features of a patterned mask (e.g., 103) into a workpiece (e.g., 120), such as in a semiconductor device, a one- or two-dimensional (depending on the features of the mask) optical transmission p... | 06/14/1994 |
| 5308721 | Self-aligned method of making phase-shifting lithograhic masks having three or more phase-shifts A phase-shifting lithographic mask having two or more self-aligned phase-shifting regions is fabricated by a sequence of etchings of the phase-shifting mask using a protective resist layer having three or more regions that have been subjected to mutually ... | 05/03/1994 |
| 5304834 | Selective epitaxy of silicon in silicon dioxide apertures with suppression of unwanted formation of facets In the prior art, selective epitaxial growth (SEG) of semiconductors, performed typically in rectangular windows penetrating through a masking layer located on a major surface of semiconductor substrate, suffers from unwanted facet formation at the corner... | 04/19/1994 |
| 5297868 | Measuring thermal conductivity and apparatus therefor In order to measure the in-plane thermal conductivity of a sample plate, the plate is placed in a prefabricated device containing (1) a pair of thermocouples, (2) a source of heat flow into the plate, (3) a heat sink of the heat flow having an open cavity... | 03/29/1994 |
| 5288368 | Electron beam lithography with reduced charging effects A direct-writing electron beam is used for defining features in a resist layer and hence ultimately in an underlying workpiece, such as in a phase-shifting mask substrate or a semiconductor integrated circuit wafer. The resist layer is located on a top ma... | 02/22/1994 |
| 5275896 | Single-alignment-level lithographic technique for achieving self-aligned features A phase-shifting lithographic mask is made by a procedure involving only a single patterned electron, ion, or photon beam bombardment of a resist layer. The bombardment is arranged to produce three kinds of regions in the resist: no dosage, low dosage, an... | 01/04/1994 |
| 5264107 | Pseudo-electroless, followed by electroless, metallization of nickel on metallic wires, as for semiconductor chip-to-chip interconnections A nickel plug (31) filling an aperture in an insulating layer (30), such as polyimide, separating two metallization levels of copper wires (28, 25) is formed by an electroless process in a plating bath (solution) containing ions of hypophosphite and of ni... | 11/23/1993 |
| 5246799 | Method of removing excess material, for repairing phase-shifting lithographic masks A defect in the form of excess material, located in a trench region at a major surface of a phase-shifting mask, is removed by spinning on the major surface a planarization layer for which dry-etching conditions exist at which it anisotropically etches at... | 09/21/1993 |
| 5246801 | Method of repairing indentations in phase-shifting lithographic masks A phase-shifting mask, having plateau and trench surfaces located on a major surface of the mask, has a defect in the form of an indentation region located on a plateau (or trench) surface. The mask is repaired with respect to the defect by spinning on th... | 09/21/1993 |
| 5244759 | Single-alignment-level lithographic technique for achieving self-aligned features A phase-shifting lithographic mask is made by a procedure involving only a single patterned electron, ion, or photon bombardment of a resist layer. The bombardment is arranged to produce three regions in the resist containing mutually different bombardmen... | 09/14/1993 |
| 5241275 | Method of measuring remaining capacity of a storage cell by comparing impedance plot characteristics The remaining capacity of a storage cell, particularly a valve regulated lead-acid cell, is determined by measuring its impedance at typically two or three relatively low frequencies f, e.g., frequencies in the approximate range of 0.001 to 1.0 Hz. In one... | 08/31/1993 |
| 5239510 | Multiple voltage supplies for field programmable gate arrays and the like A field programmable array of application circuitry (C1, C2, . . .) is programmed (or reprogrammed) by first applying application circuitry power supply (AVdd =5v) to the application circuitry, and then applying a binary digital data signal (D0... | 08/24/1993 |
| 5234149 | Debondable metallic bonding method One or more metallized chip terminals of an electronic device, such as an integrated circuit chip or a laser chip, in one embodiment are temporarily bonded to one or more metallized substrate pads of a wiring substrate, as for the purpose of electrically ... | 08/10/1993 |
| 5234153 | Permanent metallic bonding method A laser device is bonded to a diamond submount by means of a procedure including (1) codepositing an auxiliary layer, on a layer of barrier metal that has been deposited overlying the submount, followed by (2) depositing a wetting layer on the auxiliary l... | 08/10/1993 |
