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| Number | Title | Issue Date |
| 6268408 | Conductive fire-retardant thermoplastic elastomer mixture A conductive soft-durometer fire-retardant mixture comprises a thermoplastic base elastomer material, a fire-retardant material and metal-coated graphite fibers. The resulting mixture is easily molded, relatively low-cost and recyclable.... | 07/31/2001 |
| 6212056 | Micromachined variable capacitor First and second wafers are micromachined by standard integrated-circuit fabrication techniques to respectively make first and second component parts of a variable capacitor. A thin flexible membrane in the first wafer is integral with and mechanically su... | 04/03/2001 |
| 6153268 | Method for producing oriented piezoelectric films Highly oriented thin films exhibiting good piezoelectric effects are formed in a reaction chamber. This is done by bombarding a target comprising a piezoelectric material. Dislodged particles from the target are ionized and then electrostatically attracte... | 11/28/2000 |
| 4982190 | Digital arrangement having for its object to shunt ground separations at video circuits Digital circuit for shunting a ground separation plane, formed, for example, by a transformer, and present in a digital signal path. In this circuit a long sequence of equal bits offered to one side of such a ground separation plane must be conveyed furth... | 01/01/1991 |
| 4972106 | Binary-to-ternary converter for combining two binary signals A binary-to-ternary converter arrangement which achieves protective resistance against high outside voltages without having to compromise the voltage level of the positive and negative output ternary pulses. In so achieving, the minimum amplitude requirem... | 11/20/1990 |
| 4920530 | Adaptive time-discrete filter for forming a cancelling signal from synchronous data symbols An adaptive time-discrete filter having an impulse response h(i) with i=0,1,2, . . . for forming a cancelling signal from synchronous data symbols (for example to cancel echoes or lagging intersymbol interference) comprises a transversal filter section (1... | 04/24/1990 |
| 4849964 | Multistage switching system for switching N1 input channels to N2 output channels A switching system for switching-through in time-division multiplex broadcast connections and point-to-point connections. In prior art broadcast switching systems the incoming (transmitter) channels are fed with multiplicity into the switching system and ... | 07/18/1989 |
| 4825176 | Control amplifier Electronic gain control is achieved by means of a differential controller in combination with a multistage, feedback amplifier. Both the input impedance and the output impedance have a low ohmic value, so that the influence of parasitic capacitances in th... | 04/25/1989 |
| 4817081 | Adaptive filter for producing an echo cancellation signal in a transceiver system for duplex digital communication through one single pair of conductors Adaptive filter for producing an echo cancellation signal in a transceiver system arranged for digital communication in the duplex mode via one single pair of conductors, the filter comprising delay means (8) having N terminals for delaying the N most rec... | 03/28/1989 |
| 4811335 | Broadband/narrow-band switching network of the time-space-time type and time and space switching stages for broadband/narrow-band channels The invention relates to a switching system for a broadband ISDN-network by means of which signals can be transmitted with a large variety of bit rates. In addition to 64 kbit/s, 144 kbit/s and 2 Mbit/s narrow-band channels for inter alia telephony, data,... | 03/07/1989 |
| 4811087 | Clamping circuit for a television transmission system A clamping circuit for a television transmission system, includes an input amplifier whose non-inverting input is connected to the input of the clamping circuit and whose output is connected to the output of the clamping circuit. A negative feedback loop ... | 03/07/1989 |
| 4809263 | T-type switching system for broadband switching system and time switching stage for use in a t-stage If in a broadband switching system broadcast TV-signals are switched, then it should be preferred that they can be switched through without the risk of blocking. To achieve this it is proposed to distribute the broadcast TV-signals via a p-fold bus line (... | 02/28/1989 |
| 4808810 | Preamplifier for an optical receiver An optical high-impedance preamplifier for processing signals over a large dynamic and automatically operating control range. The automatic control is provided by a variable impedance which is arranged in series with the source circuit of a current-stabil... | 02/28/1989 |
| 4797904 | Transmitter for ISDN S-bus interface circuit In the future ISDN network, up to eight subscriber terminals for speech, data and image traffic can be connected to the network terminating circuit (NT). The interface between the subscriber terminals and the network terminating circuit - the S-interface ... | 01/10/1989 |
| 4796254 | Broadband space switching network and parallel-series converter and series-parallel converter for use in such a space switching network The invention relates to a broadband space switching network and to a parallel-series converter and to a series-parallel converter in combination with such a space switching network. The crosspoints of the space switching network are set once per n-bit wo... | 01/03/1989 |
| 4786884 | Adaptive transversal filter Adaptive transversal filter for use with three-signal level signals, arranged to cancel shifts in the two extreme signal levels relative to the central signal level, information signaling whether the signal level is the central signal level being coupled ... | 11/22/1988 |
| 4772860 | Phase-control loop In digital systems clock signals are generated from an external clock reference signal for the purpose of synchronization with the aid of a phase-control loop 1 incorporating a frequency-controllable oscillator 2. In practice synchronization problems occu... | 09/20/1988 |
| 4759018 | Higher order digital transmission system including a multiplexer and a demultiplexer Higher order digital transmission system including a multiplexer having N parallel inputs to which tributary input signal streams are applied, and a demultiplexer having N parallel outputs from which the tributary signal streams are taken. The signal proc... | 07/19/1988 |
| 4754386 | D.C. voltage converter with overload protection In a d.c. voltage converter 1 including a series arrangement of a transformer 3 and a pulse-switched current source 7 the power converted by means of the transformer 3 is kept constant with the aid of a control circuit 13. In the event of a short-circuit ... | 06/28/1988 |
| 4751458 | Test pads for integrated circuit chips Integrated circuit chips included on a wafer typically include multiple internal test pads. During diagnostic testing of the wafer, a fine-point test probe is utilized to contact the pads. As feature sizes decrease, the task of consistently and reliably p... | 06/14/1988 |
| 4746902 | Arrangement for compensating for non-linear distortion in an input signal to be digitized and an echo cancelling system comprising such a arrangement An arrangement for compensating for non-linear distortion in an input signal to be digitized, comprising an analogue-to-digital converter (2) for converting the input signal into an amplitude-time discrete output signal, means (3) for deriving a set of co... | 05/24/1988 |
| 4742234 | Charged-particle-beam lithography An elongated source of charged particles is utilized in a lithographic system to form multiple focused electron (or ion) beams arranged in a linear array. The basis for an extremely high-throughput lithographic system especially suited for direct writing ... | 05/03/1988 |
| 4733291 | Contact vias in semiconductor devices A glass reflow step to round off sharp edges of contact vias is typically included in processes for making integrated-circuit devices. In the course of making such devices with closely spaced vias, it has been found that unacceptable overhangs occur on th... | 03/22/1988 |
| 4724222 | Wafer chuck comprising a curved reference surface A chuck for holding a workpiece (e.g., a semiconductor wafer) in a vacuum comprises a curved reference surface. By clamping the edges of the workpiece and maintaining its backside against the curved surface (or against pins mounted on the surface), the fr... | 02/09/1988 |
| 4703166 | System for maintaining the optical alignment between stationary and moving equipment in deep-UV lithography A deep-UV step-and-repeat photolithography system includes a narrow-bandwidth pulsed excimer laser illumination source and an all-fused-silica lens assembly. The system is capable of line definition at the 0.5-micrometer level. One significant feature of ... | 10/27/1987 |
| 4694561 | Method of making high-performance trench capacitors for DRAM cells A trench version of a high-capacitance (Hi-C) capacitor for a dynamic random-access-memory (DRAM) cell is made utilizing a modified version of the doping technique described in U.S. Pat. No. 4,471,524 and 4,472,212. A shallow highly doped trench region is... | 09/22/1987 |
| 4692349 | Selective electroless plating of vias in VLSI devices Selective electroless plating of cobalt or nickel is utilized to form conductive plugs in high-aspect-ratio vias in VLSI devices. Particularly good results are obtained when an active or catalytic film is formed on the via bottoms to serve as a plating ba... | 09/08/1987 |
| 4675717 | Water-scale-integrated assembly The standard silicon wafer of a conventional wafer-scale-integrated assembly is doped to render it highly conductive. Additionally, a conductive layer is formed on the bottom of the wafer. The bottom-side layer forms an easily accessible ground plane of t... | 06/23/1987 |
| 4665414 | Schottky-barrier MOS devices Schottky-barrier MOS and CMOS devices are significantly improved by selectively doping the regions surrounding the Schottky-barrier source and drain contacts. For p-channel devices, acceptor doping is carried out in either a one-step or a two-step ion imp... | 05/12/1987 |
| 4653177 | Method of making and selectively doping isolation trenches utilized in CMOS devices It is known to utilize dielectric-filled trenches in a CMOS integrated-circuit device to achieve electrical isolation between adjacent n-channel and p-channel regions. In that way, latchup-free operation of the device is ensured. But inversion effects alo... | 03/31/1987 |
| 4643804 | Forming thick dielectric at the bottoms of trenches utilized in integrated-circuit devices Selective wet or plasma anodization is utilized for forming a relatively thick dielectric layer only at the bottoms of trenches included in DRAM and/or CMOS devices. In that way, the electrical characteristics of trenches that include bottoms having surfa... | 02/17/1987 |
| 4636080 | Two-dimensional imaging with line arrays One or two linear arrays of photodetectors are combined with optical elements to form an arrangement capable of determining the X-Y location of a focused laser beam or other light spot. The resulting arrangement is characterized by low cost and by excelle... | 01/13/1987 |
| 4623257 | Alignment marks for fine-line device fabrication A high-precision alignment pattern for fine-line device fabrication comprises unique marks. The pattern is utilized to align a mask or reticle with respect to a wafer and/or to evaluate actual level-to-level registration achieved between a set of masks or... | 11/18/1986 |
| 4618972 | X-ray source comprising double-angle conical target An improved X-ray source for a lithographic system comprises a double-angle conical target. The target is characterized by a small apparent source diameter and an efficient cooling system. Submicron resolution and high-power operation are thereby made fea... | 10/21/1986 |
| 4614433 | Mask-to-wafer alignment utilizing zone plates Mask-to-wafer alignment in X-ray lithography is advantageously carried out utilizing zone plate marks formed on the mask and wafer. In practice, it has been observed that the intensity and in some cases even the location of the centroid of the light spot ... | 09/30/1986 |
| 4613891 | Packaging microminiature devices One or more silicon-integrated-circuit chips are attached, active side up, to the bottom side of a silicon wafer. A sloped-wall through-aperture is etched in the wafer in registry with a portion of the active side of each attached chip. A lithographically... | 09/23/1986 |
| 4588928 | Electron emission system An electron emission system includes a high-brightness field-emitter cathode. Advantageously, the tip of the cathode is shaped to minimize structural variations caused by surface tension forces. In addition, an electrode assembly associated with the catho... | 05/13/1986 |
| 4577214 | Low-inductance power/ground distribution in a package for a semiconductor chip A package for a semiconductor chip includes as an integral part thereof a frame-shaped multilayer ceramic capacitor. The chip is mounted within the capacitor structure. Conductive portions of the capacitor serve as the terminals and plates of the capacito... | 03/18/1986 |
| 4555842 | Method of fabricating VLSI CMOS devices having complementary threshold voltages For optimal performance, the threshold voltages VTP and VTN of the p- and n-channel transistors in a CMOS device should be the respective complements of each other. In polysilicon-gate devices, this can be achieved by adjusting the c... | 12/03/1985 |
| 4554726 | CMOS Integrated circuit technology utilizing dual implantation of slow and fast diffusing donor ions to form the n-well To minimize the number of independent masking operations in the manufacture of a CMOS integrated circuit device using twin tub technology, the n-tub is made by separate phosphorus and arsenic implants through a common mask, and the p-tub is made by two se... | 11/26/1985 |
