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| Number | Title | Issue Date |
| 7873229 | Distributed processing for video enhancement and display power management In visual display devices such as LCD devices with backlight illumination, the backlight typically consumes most of device battery power. In the interest of displaying a given pixel pattern at a minimized backlight level, the pattern can be transformed while maintai... | 01/18/2011 |
| 7692612 | Video enhancement and display power management In visual display devices such as LCD devices with backlight illumination, the backlight typically consumes most of device battery power. In the interest of displaying a given pixel pattern at a minimized backlight level, the pattern can be transformed while maintai... | 04/06/2010 |
| 7229891 | Fabrication method for silicon-on defect layer in field-effect and bipolar transistor devices Semiconductor devices have device regions in which semiconductor properties such as spreading resistivity and its profile are significant. In making a p-type device region on a semiconductor wafer, an initial semiconductor device region is defined by a buried region... | 06/12/2007 |
| 6320624 | Method and system for combining video sequences with spatio-temporal alignment Given two video sequences, a composite video sequence can be generated which includes visual elements from each of the given sequences, suitably synchronized and represented in a chosen focal plane. For example, given two video sequences with each showing... | 11/20/2001 |
| 6208353 | Automated cartographic annotation of digital images For annotating a digital image with information from a digital map, features which are visible from a viewer position are extracted from the map. The extracted features are matched with corresponding features in the image, and feature annotations are tran... | 03/27/2001 |
| 4942442 | Device including a radiation sensor Radiation-induced effects discovered in layered structures of conductor and semiconductor materials are utilized in radiation-sensitive devices such as, e.g., highly linear as well as highly nonlinear position sensors. Such devices includes a structure of... | 07/17/1990 |
| 4928527 | Method and device for nondestructive evaluation Ultrasonic surface examination, of interest in a variety of manufacturing and maintenance situations, is facilitated by a method which involves localized sensing of a surface wave by optical-fiber interferometry. The method is particularly applicable for ... | 05/29/1990 |
| 4929064 | Optical communications modulator device Electromagnetic radiation is modulated in response to an electrical signal which produces a variable electric field in a semiconductor δ-doped structure. A resulting device has a desirably broad wavelength range in which light intensity can be modulated,... | 05/29/1990 |
| 4925407 | Nickel-based electrical contact Contacts comprising nickel and a glass-forming additive have electrical contact properties which render them suitable as replacements for gold contacts; disclosed contacts have low contact resistance even after prolonged exposure to an oxidizing ambient. ... | 05/15/1990 |
| 4923739 | Composite electrical interconnection medium comprising a conductive network, and article, assembly, and method An electrical interconnection medium is made as a composite of electrically conducting, magnetic particles in a nonconductive matrix material. Particles are magnetically aligned into a network which extends in at least two dimensions as, e.g., in a sheet ... | 05/08/1990 |
| 4916522 | Integrated circuit package using plastic encapsulant An integrated circuit package uses an encapsulant frame which prevents the encapsulant used to seal the integrated circuit chip from the ambient atmosphere from flowing to unwanted areas and to permit the encapsulant to be deposited with a controllable de... | 04/10/1990 |
| 4902086 | Device including a substrate-supported optical waveguide, and method of manufacture In the manufacture of optical devices such as, e.g., optical communications assemblies and optical gyroscopes, low-loss substrate-supported optical waveguides are desired. Such waveguides can be obtained by patterning a layer of deposited waveguide materi... | 02/20/1990 |
| 4903092 | Real space electron transfer device using hot electron injection Real space hot electron transfer devices using hot electron transfer between two conducting channels are described.... | 02/20/1990 |
| 4902912 | Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics A semiconductor integrated resonant-tunneling device having multiple negative-resistance regions, and having essentially equal current peaks in such regions, is useful as a highly compact element, e.g., in apparatus designed for ternary logic operations, ... | 02/20/1990 |
| 4897361 | Patterning method in the manufacture of miniaturized devices When high-vacuum methods are used in the manufacture of miniaturized devices such as, e.g., semiconductor integrated-circuit devices, device layers on a substrate are preferably patterned without breaking of the vacuum. Preferred patterning involves depos... | 01/30/1990 |
| 4894526 | Infrared-radiation detector device A narrow-bandwidth, high-speed infrared radiation detector is based on tunneling of photo-excited electrons out of quantum wells. Infrared radiation incident on a superlattice of doped quantum wells gives rise to intersubband resonance radiation which exc... | 01/16/1990 |
| 4891580 | Electro-optic measurements of voltage waveforms on electrical conductors The longitudinal electro-optic effect is used with an external probe to make voltage measurements on electrical conductors.... | 01/02/1990 |
| 4852960 | Narrow-linewidth resonant optical device, transmitter, system, and method Highly frequency-selective reflectivity is realized in an optical device including a waveguide and an evanescent-field coupled grating resonator cavity. The device may include a light source and serve as a low-chirp, narrow-linewidth communications laser ... | 08/01/1989 |
| 4853753 | Resonant-tunneling device, and mode of device operation A semiconductor integrated resonant-tunneling device having multiple negative-resistance regions, and having essentially equal current peaks in such regions, is useful as a highly compact element, e.g., in apparatus designed for ternary logic operations, ... | 08/01/1989 |
| 4851895 | Metallization for integrated devices Metallization of integrated devices using ruthenium as a metallization material results in well-adhering contacts to source and drain regions as well as to gate oxide. Ruthenium is similarly suited as a diffusion barrier metallization between, e.g., silic... | 07/25/1989 |
| 4849799 | Resonant tunneling transistor A resonant-tunneling, heterostructure bipolar transistor having a quantum well between emitter contact and collector region is described. In one embodiment, a compositionally graded portion of the emitter region is adjacent to the base region, and there i... | 07/18/1989 |
| 4831628 | Denices fabricated using method of selective area epitaxial growth using ion beams A method of selective area epitaxial growth using a scanning ion beam is described.... | 05/16/1989 |
| 4828358 | Testing in the manufacture, operation, and maintenance of optical device assemblies To facilitate testing in the manufacture, operation, and maintenance of substrate-supported assemblies such as, e.g., optical transmitters and receivers in subscriber-loop and local-area networks, an assembly is provided with built-in optical test feature... | 05/09/1989 |
| 4829349 | Transistor having voltage-controlled thermionic emission A transistor device using an interdigitated gate and electrode surface structure to control thermionic emission over a potential barrier is described. Complementary logic structures comprising such transistors are discussed.... | 05/09/1989 |
| 4826282 | Optical communications laser including a resonator filter A structure of first and second grating sections separated by a phase-shift section serves as a narrow-band resonator filter. Such structure may be optically coupled to a semiconductor laser cavity, and the resulting assembly can serve as a tunable narrow... | 05/02/1989 |
| 4810325 | Liquid-phase-epitaxy deposition method in the manufacture of devices Epitaxial layers are grown from a body of molten material which includes flux and layer constituent components; included in the flux are lead oxide and a small amount of boron trioxide. As compared with prior-art processing in the absence of boron trioxid... | 03/07/1989 |
| 4800051 | Method for fabricating ceramic materials Low temperature sintering of grade materials sintered to 99 percent of the theoretical density is described using TiO2 powder prepared by hydrolyzing titanium isopropoxide and calcining at 850° C.... | 01/24/1989 |
| 4794440 | Heterojunction bipolar transistor A heterojunction bipolar transistor having means for changing carrier transport properties is described.... | 12/27/1988 |
| 4791072 | Method for making a complementary device containing MODFET Complementary structure implemented in Group III-V compound semiconductors is obtained by using an n-channel field effect transistor and a p-channel MODFET.... | 12/13/1988 |
| 4785244 | Magneto-electric sensor device and sensing method using a sensor element comprising a 2-phase decomposed microstructure Devices such as, e.g., switches, flowmeters, and proximity sensors, as well as implant devices are made comprising an elongated ferromagnetic element. When the element is exposed to a variable magnetic field an electrical signal is obtained between contac... | 11/15/1988 |
| 4772866 | Device including a temperature sensor A structure of alternating layers of titanium and an insulator or semiconductor material has temperature-sensitive electrical resistivity. In combination with a resistance-measuring circuit, such structure can serve as an accurate temperature sensor. And,... | 09/20/1988 |
| 4772924 | Device having strain induced region of altered bandgap A strained layer superlattice comprising Gex Si1-x layers interleaved with Si layers is an excellent photodetector at infrared wavelengths due to the large shift in bandgap caused by the strain in the superlattice.... | 09/20/1988 |
| 4770494 | Low-loss silica optical waveguides Certain dopant materials, when present in a significant power-carrying portion of a silica-based optical waveguide fiber, are effective as intrinsic loss-reducing agents; the concentration of such dopant materials is at significantly lower levels as compa... | 09/13/1988 |
| 4742577 | Device and method for signal transmission and optical communications An optical pulse having time-dependent spectral variation is modulated by a time-dependent signal so that, upon determination of the spectral content of the modulated pulse, a representation of the signal can be obtained. Frequency in the optical pulse pr... | 05/03/1988 |
| 4740987 | Distributed-feedback laser having enhanced mode selectivity A distributed-feedback laser includes in its grating a localized phase-slip discontinuity which is placed off-center. Such discontinuity results in a quarter-wave phase slip, and it can be placed, e.g., such as to maximize the difference between threshold... | 04/26/1988 |
| 4739385 | Modulation-doped photodetector A modulation-doped field effect photodetector has a fast response time.... | 04/19/1988 |
| 4737233 | Method for making semiconductor crystal films Semiconductor crystal films on a dielectric substrate are advantageously made by a zone melting method. Single-crystal structure is initiated at a seed surface, and made to extend across a dielectric surface by melting and resolidifying. Melting is effect... | 04/12/1988 |
| 4737112 | Anisotropically conductive composite medium Electrical interconnection is established by means of an anisotropically conductive, composite layer medium comprising electrically conductive particles in a nonconductive matrix material. Enhanced uniformity of conductivity across the medium, and minimiz... | 04/12/1988 |
| 4732821 | Nickel-based electrical contact Nickel material comprising controlled amounts of hydrogen has low electrical contact resistance even after prolonged exposure to an oxidizing ambient. When used as a surface layer on an electrically conducting member, such material is suitable as a contac... | 03/22/1988 |
| 4725877 | Metallized semiconductor device including an interface layer Structures of alternating amorphous layers of titanium and a semiconductor material serve as effective interface layers between an insulator or semiconductor material and an aluminum metallization material in semiconductor devices. Such structures effecti... | 02/16/1988 |
