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| Number | Title | Issue Date |
| 5175075 | Positron beam lithography Resist (402) is exposed by a beam of positrons (320) is an apparatus (300) similar to an electron beam lithography machine.... | 12/29/1992 |
| 5172262 | Spatial light modulator and method An electrostatically deflectable beam spatial light modulator with the beam composed of two layers of aluminum alloy and the hinge connecting the beam to the remainder of the alloy formed in only one of the two layers; this provides a thick stiff beam and... | 12/15/1992 |
| 5170269 | Programmable optical interconnect system This is an optical interconnect system. The system comprises: at least one signal transmitter; at least two signal receivers; at least one DMD in the same plane as the signal transmitter; and a hologram, whereby the phase of the original beam from the sig... | 12/08/1992 |
| 5170139 | PIN diode switch This is a monolithic PIN diode switch circuit. The switch comprises: input ports, output ports, bias nodes and PIN diodes. Each port or node is connected to receive a bias signal. Preferably the PIN diodes are fabricated from GaAs or other III-V compound.... | 12/08/1992 |
| 5145799 | Stacked capacitor SRAM cell This is an SRAM cell and the cell can comprise: two NMOS drive transistors; two PMOS load transistors; first and second bottom capacitor plates 50, 52, with the first plate 50 being over a gate 34 of one of the drive transistors and the second plate 52 be... | 09/08/1992 |
| 5132775 | Methods for and products having self-aligned conductive pillars on interconnects Methods, and products formed by such methods, of forming a self-aligned conductive pillar (16) on an interconnect (12) on a body (10) having semiconducting surfaces. A first mask (24) defines an inverse pattern for formation of an interconnect (12). The i... | 07/21/1992 |
| 5132764 | Multilayer base heterojunction bipolar transistor This is a p-n junction device and the device comprises: a substrate 10 composed of a semiconductor material; a heavily doped n type sub-collector layer 14 over the substrate; a n type collector layer 16 over the sub-collector layer; a heavily doped p type... | 07/21/1992 |
