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Hands free towel carrying system
A hands free towel carrying system for coupling a towel to a user to prevent loss, theft or contamination.
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| Number | Title | Issue Date |
| 7430098 | Perpendicular magnetic recording head with dynamic flying height heating element A magnetic head includes a slider having an air bearing surface (ABS) and a trailing surface, with a transducer fabricated on the trailing surface. The transducer includes an adjunct pole disposed in a first general plane, the adjunct pole having a front edge that i... | 09/30/2008 |
| RE39478 | Magnetic head suspension assembly fabricated with integral load beam and flexure A magnetic head suspension assembly is fabricated with an integral piece which includes a load beam section, a flexure section, a rest mount section and a leaf spring section between the load beam and rear mount. A tongue extends from the load beam to the flexure an... | 01/23/2007 |
| 7149343 | Methods for analyzing defect artifacts to precisely locate corresponding defects Described are methods and systems for providing improved defect detection and analysis using infrared thermography. Test vectors heat features of a device under test to produce thermal characteristics useful in identifying defects. The test vectors are timed to enha... | 12/12/2006 |
| 7135748 | Integrated circuit with multi-length output transistor segment A monolithic integrated circuit fabricated on a semiconductor die includes a control circuit and a first output transistor having segments substantially equal to a first length. A second output transistor has segments substantially equal to a second length. The firs... | 11/14/2006 |
| 7115958 | Lateral power MOSFET for high switching speeds A lateral power metal-oxide-semiconductor field effect transistor (MOSFET) having a gate structure in which the insulated gate is coupled to the gate electrode through contacts at a plurality of locations. The source electrode includes first and second segments. The... | 10/03/2006 |
| 6990647 | Variable stage ratio buffer insertion for noise optimization in a logic network A buffer for use in a logic circuit comprises input and output nodes. A first inverter having a first device size is coupled to the input node. A second inverter is coupled in series with the first inverter and with the output node. The second inverter having a seco... | 01/24/2006 |
| 6987299 | High-voltage lateral transistor with a multi-layered extended drain structure A high-voltage transistor with a low specific on-state resistance and that supports high voltage in the off-state includes one or more source regions disposed adjacent to a multi-layered extended drain structure which comprises extended drift regions separated from ... | 01/17/2006 |
| 6938915 | Vehicle restraint system for a child A vehicle restraint system for a child includes a child car seat having a body with a back and a bottom, the bottom having one or more openings. A base unit that fits in a passenger seat of a vehicle has a top with one or more members, each of which is adapted for m... | 09/06/2005 |
| 6882005 | High-voltage vertical transistor with a multi-layered extended drain structure A high-voltage transistor with a low specific on-state resistance and that supports high voltage in the off-state includes one or more source regions disposed adjacent to a multi-layered extended drain structure which comprises extended drift regions separated from ... | 04/19/2005 |
| 6838346 | Method of fabricating a high-voltage transistor with a multi-layered extended drain structure A method for fabricating a high-voltage transistor with an extended drain region includes forming an epitaxial layer on a substrate, the epitaxal layer and the substrate being of a first conductivity type; then etching the epitaxial layer to form a pair of spaced-ap... | 01/04/2005 |
| 6828698 | Gimbal for supporting a moveable mirror A gimbal for supporting a moveable mirror includes an attachment section, first and second pairs of beams extending along the x-axis and connected to the attachment section, and third and fourth pairs of beams extending along the y-axis connected with the first and ... | 12/07/2004 |
| 6828631 | High-voltage transistor with multi-layer conduction region A high voltage insulated gate field-effect transistor includes an insulated gate field-effect device structure having a source and a drain, the drain being formed with an extended well region having one or more buried layers of opposite conduction type sandwiched th... | 12/07/2004 |
| 6825536 | Lateral power MOSFET for high switching speeds A lateral power metal-oxide-semiconductor field effect transistor (MOSFET) having a gate structure in which the insulated gate is coupled to the gate electrode through contacts at a plurality of locations. The source electrode includes first and second segments. The... | 11/30/2004 |
| 6818490 | Method of fabricating complementary high-voltage field-effect transistors A method of fabricating complementary high-voltage field-effect transistors in a substrate of a first conductivity type includes forming first and second well regions of a second conductivity type in the substrate. A first drain region of the second conductivity typ... | 11/16/2004 |
| 6815293 | High-voltage lateral transistor with a multi-layered extended drain structure A high-voltage transistor with a low specific on-state resistance and that supports high voltage in the off-state includes one or more source regions disposed adjacent to a multi-layered extended drain structure which comprises extended drift regions separated from ... | 11/09/2004 |
| 6813406 | Photonic switching apparatus for optical communication network A photonic switch for an optical communication network includes a matrix of actuator-mirror assemblies and a corresponding matrix of optical ports. A first one of the actuator-mirror assemblies directs a beam of light received from an input optical port to a referen... | 11/02/2004 |
| 6800903 | High-voltage transistor with multi-layer conduction region A high voltage insulated gate field-effect transistor includes an insulated gate field-effect device structure having a source and a drain, the drain being formed with an extended well region having one or more buried layers of opposite conduction type sandwiched th... | 10/05/2004 |
| 6798020 | High-voltage lateral transistor with a multi-layered extended drain structure A high-voltage transistor with a low specific on-state resistance and that supports high voltage in the off-state includes one or more source regions disposed adjacent to a multi-layered extended drain structure which comprises extended drift regions separated from ... | 09/28/2004 |
| 6798625 | Spin-valve magnetoresistance sensor and thin-film magnetic head The present invention provides a spin-valve magnetoresistance sensor in which are formed, on top of the substrate, free layers, and pinned layers, enclosing a nonmagnetic spacer layer, and an antiferromagnetic layer adjacent to the pinned layers. The sensor is also ... | 09/28/2004 |
| 6792170 | Method for maximizing light throughput in an optical switch A method for maximizing light transmission through an optical switch which includes a first mirror to direct a beam of light received from an input optical port to a second mirror that redirects the beam of light to an output optical port, the first and second mirro... | 09/14/2004 |
| 6791807 | Spin-valve magnetic transducing element and magnetic head having free layer with negative magnetostriction A spin-valve magnetic transducing element. In one embodiment, a spin-valve magnetic transducing element is disclosed in which a ferromagnetic tunneling junction film, including first and second ferromagnetic layers and an insulating layer is enclosed between the fer... | 09/14/2004 |
| 6787847 | High-voltage vertical transistor with a multi-layered extended drain structure A high-voltage transistor with a low specific on-state resistance and that supports high voltage in the off-state includes one or more source regions disposed adjacent to a multi-layered extended drain structure which comprises extended drift regions separated from ... | 09/07/2004 |
| 6787437 | Method of making a high-voltage transistor with buried conduction regions A high voltage insulated gate field-effect transistor includes an insulated gate field-effect device structure having a source and a drain, the drain being formed with an extended well region having one or more buried layers of opposite conduction type sandwiched th... | 09/07/2004 |
| 6781198 | High-voltage vertical transistor with a multi-layered extended drain structure A high-voltage transistor with a low specific on-state resistance and that supports high voltage in the off-state includes one or more source regions disposed adjacent to a multi-layered extended drain structure which comprises extended drift regions separated from ... | 08/24/2004 |
| 6777749 | High-voltage transistor with multi-layer conduction region A high voltage insulated gate field-effect transistor includes an insulated gate field-effect device structure having a source and a drain, the drain being formed with an extended well region having one or more buried layers of opposite conduction type sandwiched th... | 08/17/2004 |
| 6768172 | High-voltage transistor with multi-layer conduction region A high voltage insulated gate field-effect transistor includes an insulated gate field-effect device structure having a source and a drain, the drain being formed with an extended well region having one or more buried layers of opposite conduction type sandwiched th... | 07/27/2004 |
| 6768171 | High-voltage transistor with JFET conduction channels A high voltage insulated gate field-effect transistor with multiple JFET conduction channels comprises a first buried layer disposed in a first epitaxial layer formed on a substrate, a second buried layer disposed in a second epitaxial layer formed on the first epit... | 07/27/2004 |
| 6750105 | Method of fabricating a high-voltage transistor with a multi-layered extended drain structure A method for fabricating a high-voltage transistor with an extended drain region includes forming an epitaxial layer on a substrate, the epitaxial layer and the substrate being of a first conductivity type; then etching the epitaxial layer to form a pair of spaced-a... | 06/15/2004 |
| 6734714 | Integrated circuit with closely coupled high voltage output and offline transistor pair An integrated circuit fabricated in a single silicon substrate includes a high-voltage output transistor having source and drain regions separated by a channel region, and a gate disposed over the channel region. Also included is an offline transistor having source ... | 05/11/2004 |
| 6729015 | Method of manufacturing a magnetic head device A method of manufacturing a thin film magnetic head includes forming a recording gap layer of a non-alumina base nonmagnetic material on a lower magnetic pole layer, the lower magnetic pole layer being composed of materials that are milled at the same rate. An upper... | 05/04/2004 |
| 6730585 | Method of fabricating high-voltage transistor with buried conduction layer Method of fabricating a lateral, high-voltage, FET having a low on-resistance and a buried conduction layer comprises a P-type buried layer region within an N-well formed in a P-type substrate. The P-type buried layer region is connected to a drain electrode by a fi... | 05/04/2004 |
| 6724041 | Method of making a high-voltage transistor with buried conduction regions A high voltage insulated gate field-effect transistor includes an insulated gate field-effect device structure having a source and a drain, the drain being formed with an extended well region having one or more buried layers of opposite conduction type sandwiched th... | 04/20/2004 |
| 6720682 | Actuator assembly for tilting a mirror or like object An actuator for tilting a moveable object such as a mirror includes a base and a coil-object assembly that includes first and second pairs of coils each of which is attached to the object, the first pair of coils being arranged along a longitudinal axis, and the sec... | 04/13/2004 |
| 6680646 | Power integrated circuit with distributed gate driver A power integrated circuit includes a gate driver coupled to an output transistor having a plurality of segments. The gate driver also has a plurality of segments, each of the segments of the driver circuit being located adjacent a corresponding one of th... | 01/20/2004 |
| 6667213 | Method of fabricating a high-voltage transistor with a multi-layered extended drain structure A method for fabricating a high-voltage transistor with an extended drain region includes forming parallel arranged drift regions, each of which is interleaved with an insulating layer and a conducting layer that functions as a field plate. Source and bod... | 12/23/2003 |
| 6661621 | Compound thin film magnetic head An inverse type compound thin film magnetic with good dispersion of the heat generated in the magnetoresistance (MR) element, ensuring thermal reliability. In one embodiment, an electromagnetic induction type thin film magnetic head, a magnetoresistance e... | 12/09/2003 |
| 6639277 | High-voltage transistor with multi-layer conduction region A high voltage insulated gate field-effect transistor includes an insulated gate field-effect device structure having a source and a drain, the drain being formed with an extended well region having one or more buried layers of opposite conduction type sa... | 10/28/2003 |
| 6636394 | Spin-valve magnetic resistance sensor and thin-film magnetic head A spin-valve magnetic resistance sensor. In one embodiment, the spin-valve magnetic resistance sensor includes a pair of ferromagnetic layers with a non-magnetic layer sandwiched in between. The pair of ferromagnetic layers, the non-magnetic layer and an ... | 10/21/2003 |
| 6635544 | Method of fabricating a high-voltage transistor with a multi-layered extended drain structure A method for fabricating a high-voltage transistor with an extended drain region includes forming an epitaxial layer on a substrate, the epitaxial layer and the substrate being of a first conductivity type; then etching the epitaxial layer to form a pair ... | 10/21/2003 |
| 6633065 | High-voltage transistor with multi-layer conduction region A high voltage insulated gate field-effect transistor includes an insulated gate field-effect device structure having a source and a drain, the drain being formed with an extended well region having one or more buried layers of opposite conduction type sa... | 10/14/2003 |
