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...that the Slinky toy was the result of a failed attempt by engineer Richard James to produce an antivibration device for ship instruments? His goal was to develop a spring that would instantaneously counterbalance the wave motion that rocks a ship at sea. Instead, he developed the Slinky.
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| Number | Title | Issue Date |
| 8162728 | Dual-pore structure polishing pad The polishing pad is useful for polishing at least one of magnetic, optical and semiconductor substrates. A porous polishing layer includes a dual porosity structure within a polyurethane matrix. The dual porosity structure has a primary set of pores having pore wal... | 04/24/2012 |
| 8062103 | High-rate groove pattern The invention provides a polishing pad useful for polishing at least one of a magnetic, optical and semiconductor substrate in the presence of a polishing medium with a polishing pad. The polishing pad comprises a center, an inner region surrounding the center, a tr... | 11/22/2011 |
| 8057282 | High-rate polishing method The invention provides a method for polishing at least one of a magnetic, optical and semiconductor substrate in the presence of a polishing medium with a polishing pad. The substrate is fixed within a carrier fixture having a channel-free surface. The method compri... | 11/15/2011 |
| 7988878 | Selective barrier slurry for chemical mechanical polishing The polishing solution is useful for removing a barrier from a semiconductor substrate. The solution contains by weight percent 0.001 to 25 oxidizer, 0.0001 to 5 anionic surfactant, 0 to 15 inhibitor for a nonferrous metal, 0 to 40 abrasive, 0 to 20 complexing agent... | 08/02/2011 |
| 7981316 | Selective barrier metal polishing method The polishing method uses a polishing solution for removing barrier materials in the presence of interconnect metals and dielectrics. The polishing solution comprises, by weight percent, 0.1 to 10 hydrogen peroxide, at least one pH adjusting agent selected from the ... | 07/19/2011 |
| 7842192 | Multi-component barrier polishing solution The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for redu... | 11/30/2010 |
| 7828634 | Interconnected-multi-element-lattice polishing pad The polishing pad (104) is useful for polishing at least one of magnetic, optical and semiconductor substrates (112) in the presence of a polishing medium (120). The polishing pad (104) includes a plurality of polishing elements (402, ... | 11/09/2010 |
| 7807252 | Chemical mechanical polishing pad having secondary polishing medium capacity control grooves A chemical mechanical polishing pad (104, 400) that includes a polishing layer (108, 420, 500) having a set of primary grooves (124, 408, 516) formed in a polishing surface (110, 428, 520) of the pad. The pad also includes a set of second... | 10/05/2010 |
| 7790618 | Selective slurry for chemical mechanical polishing An aqueous solution is useful for selective removal in the presence of a low-k dielectric. The aqueous solution comprises by weight percent 0 to 25 oxidizer; 0.00002 to 5 multi-component surfactant, the multi-component surfactant having a hydrophobic tail, a nonioni... | 09/07/2010 |
| 7785487 | Polymeric barrier removal polishing slurry The aqueous slurry is useful for chemical mechanical polishing semiconductor substrates having copper interconnects. The aqueous slurry includes by weight percent, 0.01 to 25 oxidizing agent, 0.1 to 50 abrasive particles, 0.001 to 3 polyvinyl pyrrolidone, 0.01 to 10... | 08/31/2010 |
| 7771251 | Three-dimensional network for chemical mechanical polishing The polishing pad (104) is useful for polishing at least one of magnetic, optical and semiconductor substrates (112) in the presence of a polishing medium (120). The polishing pad (104) includes a three-dimensional network of interconnect... | 08/10/2010 |
| 7767581 | Barrier polishing fluid The polishing fluid is useful for polishing tantalum-containing barrier materials of a semiconductor substrate. The polishing fluid includes a nitrogen-containing compound having at least two nitrogen atoms comprising imine compounds and hydrazine compounds. The nit... | 08/03/2010 |
| 7709053 | Method of manufacturing of polymer-coated particles for chemical mechanical polishing A method of manufacturing polymer-coated particles is useful for chemical mechanical polishing magnetic, optical, semiconductor or silicon substrates. First it provides a dispersion of particle cores in a non-aqueous solvent. Then introducing a polymeric precursor i... | 05/04/2010 |
| 7604529 | Three-dimensional network for chemical mechanical polishing The polishing pad (104) is useful for polishing at least one of magnetic, optical and semiconductor substrates (112) in the presence of a polishing medium (120). The polishing pad (104) includes a three-dimensional network of interconnect... | 10/20/2009 |
| 7569268 | Chemical mechanical polishing pad The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad has an ultimate tensile strength of at least 3,000 psi (20.7 MPa) and polymeric matrix containing closed cell pores. The closed cell pores... | 08/04/2009 |
| 7520796 | Polishing pad with grooves to reduce slurry consumption A chemical mechanical polishing pad having an annular polishing track and a concentric center O. The polishing pad includes a polishing layer having a plurality of pad grooves formed therein. The polishing pad is designed for use with a carrier, e.g., a wafer carrie... | 04/21/2009 |
| 7517277 | Layered-filament lattice for chemical mechanical polishing The polishing pad (104) is useful for polishing at least one of a magnetic, optical and semiconductor substrate (112) in the presence of a polishing medium (120). The polishing pad 104 includes multiple layers of polishing filaments (2... | 04/14/2009 |
| 7503833 | Three-dimensional network for chemical mechanical polishing The polishing pad (104) is useful for polishing at least one of magnetic, optical and semiconductor substrates (112) in the presence of a polishing medium (120). The polishing pad (104) includes a three-dimensional network of interconnect... | 03/17/2009 |
| 7497967 | Compositions and methods for polishing copper The present invention provides an aqueous composition useful for polishing copper interconnects on a semiconductor wafer comprising by weight percent up to 25 oxidizer, 0.05 to 1 inhibitor for a nonferrous metal, 0.01 to 5 complexing agent for the nonferrous metal, ... | 03/03/2009 |
| 7491252 | Tantalum barrier removal solution A chemical mechanical planarization solution is useful for removing tantalum barrier materials. The solution includes by weight percent 0 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal and 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 tanta... | 02/17/2009 |
| 7445847 | Chemical mechanical polishing pad The invention provides a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polymeric matrix having a top polishing surface. The top polishing surface has polymeric polishing asperities... | 11/04/2008 |
| 7438636 | Chemical mechanical polishing pad A chemical mechanical polishing pad is suitable for polishing at least one of semiconductor, optical and magnetic substrates. The polishing pad has a high modulus component forming a continuous polymeric matrix and an impact modifier within the continuous polymeric ... | 10/21/2008 |
| 7435356 | Abrasive-free chemical mechanical polishing compositions and methods relating thereto An aqueous abrasive-free composition is useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The composition comprises an oxidizer, an inhibitor for the nonferrous metal, 0 to 15 weight percent water soluble modi... | 10/14/2008 |
| 7427362 | Corrosion-resistant barrier polishing solution The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The polishing solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibito... | 09/23/2008 |
| 7414080 | Polyurethane polishing pad The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed with an isocyanate-terminated reaction product formed from a prepolymer reaction of... | 08/19/2008 |
| 7387964 | Copper polishing cleaning solution A cleaning solution for removing copper complex residues from the surface of polishing pads and wafer substrates includes an amine pH-adjusting agent, which can be a unidentate or bidentate amine compound or a quartnary ammonium hydroxide compound or an amine includ... | 06/17/2008 |
| 7384871 | Chemical mechanical polishing compositions and methods relating thereto The present invention provides an aqueous composition useful for polishing nonferrous metal interconnects on a semiconductor wafer comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.01 to 5% by wei... | 06/10/2008 |
| 7371160 | Elastomer-modified chemical mechanical polishing pad The chemical mechanical polishing pad is suitable for polishing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polymeric matrix with an elastomeric polymer distributed within the polymeric matrix. The polymeric matrix ha... | 05/13/2008 |
| 7311590 | Polishing pad with grooves to retain slurry on the pad texture A rotational chemical mechanical polishing pad designed for use with a polishing medium. The polishing pad includes a polishing layer having a polishing surface containing a plurality of grooves. At least a portion of each of the plurality of grooves has a shape and... | 12/25/2007 |
| 7303993 | Chemical mechanical polishing compositions and methods relating thereto The present invention provides an aqueous composition useful for CMP of a semiconductor wafer containing a metal comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.001 to 10% by weight copolymer bl... | 12/04/2007 |
| 7300480 | High-rate barrier polishing composition The solution is useful for removing a barrier material from a semiconductor substrate. The solution comprises, by weight percent, 0.01 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal, 0 to 15 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01... | 11/27/2007 |
| 7300874 | Chemical mechanical polishing compositions and methods relating thereto A method for chemical mechanical polishing of semiconductor substrates containing a metal layer requiring removal and metal interconnects utilizing a composition containing engineered copolymer molecules comprising hydrophilic functional groups and relatively less h... | 11/27/2007 |
| 7300603 | Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers An aqueous chemical mechanical planarizing composition includes an oxidizer for promoting barrier removal and an abrasive. Inhibitor decreases removals of a metal interconnect. The composition has a carboxylic acid polymer having at least one repeat unit of the poly... | 11/27/2007 |
| 7300602 | Selective barrier metal polishing solution The polishing solution is useful for removing barrier materials in the presence of interconnect metals and dielectrics. The polishing solution comprises, by weight percent, 0.1 to 10 hydrogen peroxide, at least one pH adjusting agent selected from the group consisti... | 11/27/2007 |
| 7300340 | CMP pad having overlaid constant area spiral grooves A circular chemical mechanical polishing pad that includes a polishing surface having a concentrically located origin. The polishing surface includes groove sets each containing grooves arranged in a pattern in which ones of the grooves in one groove set cross ones ... | 11/27/2007 |
| 7273407 | Transparent polishing pad The present invention relates to a polishing pad useful for planarizing a substrate in a CMP process using a polishing composition. The polishing pad is transparent and allows for the use of an in-situ optical end-point detection apparatus without the need for a sep... | 09/25/2007 |
| 7270762 | Polishing compositions for noble metals The polishing composition of this invention is useful for chemical-mechanical polishing of substrates containing noble metals such as platinum and comprises up to about 50% by weight of a adjuvant wherein said adjuvant is s elected from a group consisting of a metal... | 09/18/2007 |
| 7270595 | Polishing pad with oscillating path groove network A polishing pad (20) for polishing a wafer (32) or other article, the pad having a groove network (60) configured to increase the residence time polishing medium (46) on the pad. The groove network has a first portion (72) that may... | 09/18/2007 |
| 7267610 | CMP pad having unevenly spaced grooves A chemical mechanical polishing pad (100) having a circular polishing track (124) and a concentric center (116). The polishing pad (100) includes a polishing layer (104) having a groove pattern containing a plurality of grooves ( | 09/11/2007 |
| 7255633 | Radial-biased polishing pad The polishing pad is useful for polishing magnetic, optical and semiconductor substrates. The pad includes a polishing layer having a rotational center and an annular polishing track concentric with the rotational center and has a width. The width of the annular pol... | 08/14/2007 |
