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| Number | Title | Issue Date |
| 5760459 | High performance, high voltage non-epibipolar transistor A high performance, high voltage non-epi bipolar transistor including a substrate (12) with an n-type conductivity well (13) and an insulative layer (14) with first (15), second (17) and third (18) openings exposing the substrate in the well. A first p-ty... | 06/02/1998 |
| 5703482 | Apparatus for testing electronic devices in hostile media An apparatus for testing electronic devices in hostile media includes an isolation tank (24) which contains an inert or relatively inert material (26) such as fluorinated hydrocarbon liquid. Within the isolation tank (24) submersed in the inert or relativ... | 12/30/1997 |
| 5629630 | Semiconductor wafer contact system and method for contacting a semiconductor wafer A semiconductor wafer contact system includes a base substrate (13) which has an array of raised supports (18). The array of raised supports (18) are distributed in a pattern corresponding to the pattern of electrical contacts (12) on the semiconductor wa... | 05/13/1997 |
| 5607000 | Hazardous material liquid dispensing system and method A non-venting hazardous material liquid dispensing system (25) includes a removable supply vessel (7) coupled to a gas source (1) and a permanent buffer vessel (11). The permanent buffer vessel (11) is additionally coupled through a suction pump (14) to t... | 03/04/1997 |
| 5606184 | Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making A complementary III-V heterostructure field effect device includes the same refractory ohmic material for providing the contacts (117, 119), to both the N-type and P-type devices. Furthermore, the refractory ohmic contacts (117, 119) directly contact the ... | 02/25/1997 |
| 5581118 | Electronic surface mount device A surface mount package (10) includes a leadframe (14) facing away from the mounting surface such that the primary heat path is away from the mounting surface. The package may be a modified TO-220, wherein the tab (16) of the leadframe is bent down toward... | 12/03/1996 |
| 5563703 | Lead coplanarity inspection apparatus and method thereof An apparatus for and method of determining the coplanarity of leads of a semiconductor device is provided. The apparatus comprises a base (24) for placing the semiconductor device, and a plurality of mirrors (38) and (36) surrounding the base. The mirrors... | 10/08/1996 |
| 5556808 | Method for aligning a semiconductor device A system and method for aligning a semiconductor device (10) to a fixture (11) is provided. A first physical alignment feature (12) on the semiconductor device (10) and a second physical alignment (24) on the fixture (11) mate to align and hold the semico... | 09/17/1996 |
| 5545893 | Optocoupler package and method for making An optocoupler package (40) has two pre-molded thermoplastic halves (42, 54); one containing the emitter (16) and the other containing the detector (18). The detector half (54) has a well (56) where the detector (54) is located. The well (56) is filled wi... | 08/13/1996 |
| 5543724 | Method and apparatus for locating conductive features and testing semiconductor devices A system for locating electrically conductive features such as device terminals (104) of a semiconductor die device under test (103) includes an array of test terminals (101), an anisotropically conductive material (102) above the array of test terminals ... | 08/06/1996 |
| 5520785 | Method for enhancing aluminum nitride A method for enhancing aluminum nitride includes, in one version, annealing sputtered aluminum nitride in a reducing atmosphere (11), and subsequently annealing the sputtered aluminum nitride in an inert atmosphere (12). A superior aluminum nitride thin f... | 05/28/1996 |
| 5508230 | Method for making a semiconductor device with diamond heat dissipation layer A semiconductor device having improved heat dissipating capability is provided. The preferred device in accordance with the invention includes an electronic device (12) formed in a surface (14) of a semiconductor die (10). The surface (14) is covered with... | 04/16/1996 |
| 5504039 | Method for making a self-aligned oxide gate cap A method for making a self-aligned oxide gate cap is provided. The method requires only one photoresist step to make a self-aligned oxide cap that can serve as an implant block and provide self-aligned contacts. A substrate with a gate line is provided. A... | 04/02/1996 |
