...that one person who claimed to be the inventor of the television is Russian emigre Vladimir Zworykin? In 1929 David Sarnoff, founder of RCA, asked Zworykin what it would take to develop TV for commercial use. He said: a year and a half and $100,000. In reality, it took 20 years and $50 million! Before his death in 1982 at the age of 92, Zworykin said of his invention: "The technique is wonderful. It is beyond my expectations. But the programs! I would never let my children even come close to this thing."
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| Number | Title | Issue Date |
| 5469263 | Method for alignment in photolithographic processes A method for alignment in photolithographic processes includes providing a target (31) comprising features having a characteristic spatial period (P). An optical image of the target is captured, and components (33) of the image lacking the characteristic ... | 11/21/1995 |
| 5469072 | Integrated circuit test system An integrated circuit test system provides a quick change flexible circuit membrane (214). The flexible circuit membrane is a quadrant based design which allows steep launch angles away from a rectangular die under test (112). The flexible circuit membran... | 11/21/1995 |
| 5389576 | Method of processing a polycide structure A method substantially eliminating consumption of silicon from semiconductor devices is provided. The method includes controlling gases within the environment wherein the semiconductor device is positioned. The environment is formed to include an inert ga... | 02/14/1995 |
| 5389564 | Method of forming a GaAs FET having etched ohmic contacts The present invention provides a III-V semiconductor FET (10, 30, 40) having etched ohmic contacts (19, 20, 36, 37, 43, 44). A gate (16) of the FET (10, 30, 40) is formed in contact with a surface of a III-V substrate (11). An ohmic contact (19, 20, 36, 3... | 02/14/1995 |
| 5388323 | Method of forming a probe for an atomic force microscope A probe (10,30,40) for forming images of surfaces (11) facilitates simultaneous formation of both thermal and atomic force microsocopy images. The probe (10,30,40) includes a heat sensing assembly (15) that has a heat sensing element (19,38,42). An electr... | 02/14/1995 |
| 5387548 | Method of forming an etched ohmic contact The present invention includes forming an etched ohmic contact (10, 9) by applying a layer of an etch susceptible contact material (14) to a III-V semiconductor substrate (11). A portion of the contact layer (14A) is alloyed with the substrate (11) to for... | 02/07/1995 |
| 5384269 | Methods for making and using a shallow semiconductor junction A method for making a shallow junction in a gallium arsenide substrate including implanting doping ions into an upper surface of the substrate and incorporating sulfur into the upper surface of the substrate after the ion implantation. A capping layer is ... | 01/24/1995 |
| 5341684 | Pressure sensor built into a cable connector A semiconductor sensor (10) is built into a cable connector to provide rapid and reliable attachment of the semiconductor sensor (10) into a monitoring or control system. The sensor (10) is mounted in a package (11) having cable connector leads (12, 13, 1... | 08/30/1994 |
| 5336921 | Vertical trench inductor A method of forming vertical trench inductor (10) includes providing a layer (11) and forming a plurality of trenches (12) vertically therein. The trenches (12) are filled with a conductive material (16) and etched using a photolithographically defined ma... | 08/09/1994 |
| 5314107 | Automated method for joining wafers A method for joining a number of first and second wafers (11,12) having one polished surface in preparation for direct wafer bonding is provided. The method involves placing a number of first (11) and the same number of second (12) wafers into slots (16) ... | 05/24/1994 |
| 5306920 | Ion implanter with beam resolving apparatus and method for implanting ions An ion implantation apparatus including a resolving aperture-shutter assembly (31) placed in the ion beam path (18). The resolving aperture-shutter assembly includes a movable shutter (34) and a shutter housing surrounding the movable shutter (34). Select... | 04/26/1994 |
| 5291394 | Manufacturing control and capacity planning system A system and process for allowing virtual allocations of resources to lots to closely mimic actual allocations of resources to lots is disclosed. Virtual allocations represent planned or scheduled allocations of an organization's resources to produce vari... | 03/01/1994 |
| 5291607 | Microprocessor having environmental sensing capability A microprocessor having a monolithically integrated environmental sensor is provided. The microprocessor is shielded from an environmental signal by isolation which is specific to the type of sensor used, thereby allowing the sensor to be exposed to the e... | 03/01/1994 |
| 5278633 | Optical contour detector and methods for making and using An optical contour detector (11) having a source of electromagnetic radiation (12) aimed at a contoured surface is provided. A first detector (13) and a second detector (14) are positioned near the contoured surface for detecting electromagnetic radiation... | 01/11/1994 |
| 5270225 | Method of making a resonant tunneling semiconductor device A resonant tunneling semiconductor device having two large bandgap barrier layers (12, 14) separated by a quantum well (13) is provided. The two barriers (12,14) and the quantum well (13) are formed between first and second semiconductor layers (11, 16) o... | 12/14/1993 |
| 5262637 | Reprographic media detector and methods for making and using A reprographic media detector having a source of electromagnetic radiation (12) aimed at a reflector (17) is provided. A first detector (13) is positioned near the paper path for detecting electromagnetic radiation reflected from the reflector and a first... | 11/16/1993 |
| 5260596 | Monolithic circuit with integrated bulk structure resonator A structure is provided to integrate bulk structure resonators into a monolithic integrated circuit chip. The chip also contains the remaining circuit components (17, 21, 24) required for the desired system function. Micromachining techniques are used to ... | 11/09/1993 |
| 5258948 | Memory cell sense technique A memory cell sense technique for sensing a logic state of a memory cell. An output level translator (33) which can be preset to a predetermined logic state is utilized. A current source circuit (24) and a current sink circuit (26) change memory cell sens... | 11/02/1993 |
| 5256581 | Silicon film with improved thickness control A method of fabricating a silicon film with improved thickness control and low defect density. The method comprises implanting a silicon wafer (19) with hydrogen ions to produce a layer of n-type silicon (18) having a precisely controlled thickness. Bondi... | 10/26/1993 |
| 5256599 | Semiconductor wafer wax mounting and thinning process A wax (13) dissolved in solvent is placed on a semiconductor wafer (12) and made uniform. An assembly is formed by bonding the semiconductor wafer (12) to a submount (17) with a uniform wax layer (14). The submount (17) supports and allows handling of the... | 10/26/1993 |
| 5256578 | Integral semiconductor wafer map recording A method for integral semiconductor wafer map recording which comprises a semiconductor wafer (11) having a plurality of individual die (12, 13) thereon. Testing each of the individual die (12). Summarizing the results of the testing in a wafer map. Recor... | 10/26/1993 |
| 5255181 | Method of planning organizational activities A method for translating complex process flow networks into plans or schedules for the manufacturing of products or the performance of other organizational activities is disclosed. The method maintains a time-valued list of existing commitments to resourc... | 10/19/1993 |
| 5254491 | Method of making a semiconductor device having improved frequency response A technique for improving the frequency response of a semiconductor device employing silicon as the semiconductor material. Parasitic components inherent in semiconductor devices degrade the performance of these devices at higher frequencies. Typically, a... | 10/19/1993 |
| 5252783 | Semiconductor package A semiconductor package is provided having a die attach flag (12) with integral flanges (13) which prevent high pressure plastic encapsulant (18) from escaping or entering between the die attach flag (12) and a mold cavity plate (15) during encapsulation.... | 10/12/1993 |
| 5250844 | Multiple power/ground planes for tab A TAB lead frame having concentric power/ground planes provides for even distribution of power and ground potentials about the periphery of an integrated circuit. An electrically conductive plane is divided into multiple concentric power/ground planes, ea... | 10/05/1993 |
| 5249465 | Accelerometer utilizing an annular mass An accelerometer in which the seismic mass is formed in the shape of an annulus. The annular shape allows twisting motions as well as displacement of the seismic mass to be sensed and restoring electrostatic forces applied. This allows the supporting spri... | 10/05/1993 |
| 5250847 | Stress isolating signal path for integrated circuits A stress isolating signal path having one end of fixed to a bonding pad of an integrated circuit chip and another end which forms a flexible bonding surface is provided. The flexible bonding surface may be bonded to external package components or external... | 10/05/1993 |
| 5246291 | Bond inspection technique for a semiconductor chip A bond inspection technique which determines the integrity of a plurality of package leads (13) bonded to a plurality of contact areas (12) on a semiconductor chip (11). A bonding process heats each package lead (13) bonded to each contact area (12). A ca... | 09/21/1993 |
| 5241864 | Double pinned sensor utilizing a tensile film A double pinned micromachined sensor (11) which utilizes a laminated film (27) having overall tensile strength formed on top of a silicon substrate (16). The laminated film (27) comprises a layer of silicon nitride (18) encapsulated by two layers of polys... | 09/07/1993 |
| 5243498 | Multi-chip semiconductor module and method for making and testing A multi-chip semiconductor module (10,20) includes a plurality of semiconductor chips (13,13') mounted on a substrate (11) and a plurality of conductive vias (16) extending through the substrate (11). A conductive network (17) formed on the substrate and ... | 09/07/1993 |
| 5243572 | Deselect circuit A deselect circuit (10) receiving a variable number of input signals which enables an output stage to generate a logic state signifying a deselect condition at a deselect output (12). The deselect circuit (10) operates synchronously having a clock signal ... | 09/07/1993 |
| 5243206 | Logic circuit using vertically stacked heterojunction field effect transistors Logic circuits using a heterojunction field effect transistor structure having vertically stacked complementary devices is provided. A P-channel quantum well and an N-channel quantum well are formed near each other under a single gate electrode and separa... | 09/07/1993 |
| 5233861 | Apparatus and method for in situ calibration of a metering device An apparatus and method for in situ calibration of a metering device (21) in a gas manifold or plumbing system. A calibrated gas source and inlet (17) are provided. Connected to the calibrated gas source is a first three way valve. The first three way val... | 08/10/1993 |
| 5233510 | Continuously self configuring distributed control system A method of continuously self configuring a distributed control system. The method comprises scanning a plurality of potential address codes to locate an active object (13). Software senses an identity code (17) which is associated with the active object ... | 08/03/1993 |
| 5232143 | Multi-chip die bonder A multi-chip semiconductor die bonder having a plurality of die handling chucks (23) and associated collets (14) which serve to pick up a plurality of semiconductor die (16) then position and bond each semiconductor die in position on a package (17). A pl... | 08/03/1993 |
| 5232547 | Simultaneously measuring thickness and composition of a film A semiconductor wafer (11) with a lattice mismatched film (12) on its upper surface is placed on a flat support surface (15). A laser beam (13, 23, 24, 26, 27) is directed onto the film (12). Curvature of the semiconductor wafer caused by the film (12) is... | 08/03/1993 |
| 5230184 | Distributed polishing head A distributed polishing head assembly (17) has a flexible membrane (14), and a plurality of periodic polishing pads (12) that are attached to the flexible membrane (14). The polishing pads (12) are made from a flat semiconductor wafer that has been sawed ... | 07/27/1993 |
| 5229305 | Method for making intrinsic gettering sites in bonded substrates A method is provided for making a plurality of intrinsic gettering sites in a bonded silicon substrate (21). A first silicon substrate (10) with a first and second surface (12, 13) is provided. The first surface (12) of the first silicon substrate (10) is... | 07/20/1993 |
| 5223079 | Forming thin liquid phase epitaxial layers A thin layer of liquid phase epitaxial melt material (26) is formed on a wafer (15,16). The thin melt layer (26) is held in contact with the wafer (15,16) while the temperature of the thin melt layer (26) and the wafer (15,16) are reduced to crystallize a... | 06/29/1993 |
| 5223732 | Insulated gate semiconductor device with reduced based-to-source electrode short A vertical power MOSFET structure having a source and base region which are not shorted together is provided. The source and base region are formed in a semiconductor substrate using a selectively patterned gate stack which is formed on the substrate as a... | 06/29/1993 |