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A vest or belt is integrally formed with tubular, pet receiving passageways which extend around the wearer's body and terminate in pocket-like chambers for feeding and retrieval.
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| Number | Title | Issue Date |
| 8183130 | Semiconductor device and method of forming shielding layer around back surface and sides of semiconductor wafer containing IPD structure A semiconductor wafer has an insulating layer over a first surface of the substrate. An IPD structure is formed over the insulating layer. The IPD structure includes a MIM capacitor and inductor. A conductive via is formed through a portion of the IPD structure and ... | 05/22/2012 |
| 8183095 | Semiconductor device and method of forming sacrificial protective layer to protect semiconductor die edge during singulation A semiconductor wafer contains a plurality of semiconductor die separated by a saw street. An insulating layer is formed over the semiconductor wafer. A protective layer is formed over the insulating layer including an edge of the semiconductor die along the saw str... | 05/22/2012 |
| 8183087 | Semiconductor device and method of forming a fan-out structure with integrated passive device and discrete component A semiconductor device is made by providing a temporary carrier for supporting the semiconductor device. An integrated passive device (IPD) is mounted to the temporary carrier using an adhesive. The IPD includes a capacitor and a resistor and has a plurality of thro... | 05/22/2012 |
| 8174119 | Semiconductor package with embedded die A semiconductor package having an embedded die and solid vertical interconnections, such as stud bump interconnections, for increased integration in the direction of the z-axis (i.e., in a direction normal to the circuit side of the die). The semiconductor package c... | 05/08/2012 |
| 8174098 | Semiconductor device and method of providing a thermal dissipation path through RDL and conductive via A semiconductor device has a conductive via formed around a perimeter of the semiconductor die. First and second conductive layers are formed on opposite sides of the semiconductor die and thermally connected to the conductive via. An insulating layer is formed over... | 05/08/2012 |
| 8173536 | Semiconductor device and method of forming column interconnect structure to reduce wafer stress An interconnect pad is formed over a first substrate. A photoresist layer is formed over the first substrate and interconnect pad. A portion of the photoresist layer is removed to form a channel and expose a perimeter of the interconnect pad while leaving the photor... | 05/08/2012 |
| 8170928 | System and method of transferring data through transaction process A transaction process system (10) provides for data transactions between parties. In a credit card transaction, the parties are the merchant (20), acquiring bank (24), card association (34), issuing bank (14), and cardholder (12... | 05/01/2012 |
| 8169071 | Semiconductor device having vertically offset bond on trace interconnects on recessed and raised bond fingers A semiconductor device includes a substrate, a first recessed conductive layer embedded and recessed into a first surface of the substrate, and a first raised conductive layer disposed above the first surface. A first vertical offset exists between an upper surface ... | 05/01/2012 |
| 8169058 | Semiconductor device and method of stacking die on leadframe electrically connected by conductive pillars A semiconductor device has a first semiconductor die mounted to a first contact pad on a leadframe or substrate with bumps. A conductive pillar is formed over a second semiconductor die. The second die is mounted over the first die by electrically connecting the con... | 05/01/2012 |
| 8168470 | Semiconductor device and method of forming vertical interconnect structure in substrate for IPD and baseband circuit separated by high-resistivity molding compound A semiconductor device is made with a conductive via formed through a top-side of the substrate. The conductive via extends vertically through less than a thickness of the substrate. An integrated passive device (IPD) is formed over the substrate. A plurality of fir... | 05/01/2012 |
| 8168458 | Semiconductor device and method of forming bond wires and stud bumps in recessed region of peripheral area around the device for electrical interconnection to other devices A semiconductor wafer contains a plurality of semiconductor die each having a peripheral area around the die. A recessed region with angled or vertical sidewall is formed in the peripheral area. A conductive layer is formed in the recessed region. A first stud bump ... | 05/01/2012 |
| 8164184 | Semiconductor device and method of forming conductive pillars in recessed region of peripheral area around the device for electrical interconnection to other devices A semiconductor wafer contains a plurality of semiconductor die each having a peripheral area around the die. A first insulating layer is formed over the die. A recessed region with angled sidewall is formed in the peripheral area. A first conductive layer is formed... | 04/24/2012 |
| 8164158 | Semiconductor device and method of forming integrated passive device An IPD semiconductor device has a capacitor formed over and electrically connected to a semiconductor die. An encapsulant is deposited over the capacitor and around the semiconductor die. A first interconnect structure is formed over a first surface of the encapsula... | 04/24/2012 |
| 8163624 | Discrete semiconductor device and method of forming sealed trench junction termination A discrete semiconductor device has a substrate with a first conductivity type of semiconductor material. A first semiconductor layer is formed over the substrate. The first semiconductor layer having the first conductivity type of semiconductor material. A second s... | 04/24/2012 |
| 8163597 | Semiconductor device and method of forming no-flow underfill material around vertical interconnect structure A semiconductor device is made by forming a conductive layer over a first sacrificial carrier. A solder bump is formed over the conductive layer. A no-flow underfill material is deposited over the first carrier, conductive layer, and solder bump. A semiconductor die... | 04/24/2012 |
| 8159047 | Semiconductor device and method of forming three-dimensional vertically oriented integrated capacitors A semiconductor device includes conductive pillars disposed vertically over a seed layer, a conformal insulating layer formed over the conductive pillars, and a conformal conductive layer formed over the conformal insulating layer. A first conductive pillar, the con... | 04/17/2012 |
| 8158510 | Semiconductor device and method of forming IPD on molded substrate A semiconductor device is made by depositing an encapsulant material between first and second plates of a chase mold to form a molded substrate. A first conductive layer is formed over the molded substrate. A resistive layer is formed over the first conductive layer... | 04/17/2012 |
| 8147165 | Artificial ground reef An artificial ground reef has an attached implanting body to allow seaweed to readily attach and inhabit the artificial ground reef. The artificial ground reef has a main body having an upper member and lower member. Seawater flows in all directions through a plural... | 04/03/2012 |
| 8143108 | Semiconductor device and method of dissipating heat from thin package-on-package mounted to substrate A semiconductor device has a first substrate with a central region. A plurality of bumps is formed around a periphery of the central region of the first substrate. A first semiconductor die is mounted to the central region of the first substrate. A second semiconduc... | 03/27/2012 |
| 8143097 | Semiconductor device and method of forming open cavity in TSV interposer to contain semiconductor die in WLCSMP A semiconductor device is made by mounting a semiconductor wafer to a temporary carrier. A plurality of TSV is formed through the wafer. A cavity is formed partially through the wafer. A first semiconductor die is mounted to a second semiconductor die. The first and... | 03/27/2012 |
| 8138558 | Semiconductor device and method of forming low voltage MOSFET for portable electronic devices and data processing centers A semiconductor device has a well region formed within a substrate. A gate structure is formed over a surface of the substrate. A source region is formed within the substrate adjacent to the gate structure. A drain region is formed within the substrate adjacent to t... | 03/20/2012 |
| 8138027 | Optical semiconductor device having pre-molded leadframe with window and method therefor A semiconductor device is made by providing a semiconductor die having an optically active area, providing a leadframe or pre-molded laminated substrate having a plurality of contact pads and a light transmitting material disposed between the contact pads, attaching... | 03/20/2012 |
| 8138014 | Method of forming thin profile WLCSP with vertical interconnect over package footprint A semiconductor wafer has a plurality of first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. The active surface of the first semiconductor die is oriented toward an active surface of the second semiconductor die. An encapsu... | 03/20/2012 |
| 8137995 | Double-sided semiconductor device and method of forming top-side and bottom-side interconnect structures A semiconductor device is made by forming a first active device on a first side of a semiconductor wafer. A first insulating layer is formed over the first side of the wafer. A first conductive layer is formed over the first insulating layer. A first interconnect st... | 03/20/2012 |
| 8136248 | Method of making building panels with support members extending partially through the panels A building panel for residential and commercial construction uses a plurality of insulating blocks connected together by adhesive. The insulation blocks are typically made of foam. A plurality of support members are disposed on opposite sides of the insulating block... | 03/20/2012 |
| 8133762 | Semiconductor device and method of providing z-interconnect conductive pillars with inner polymer core A semiconductor device is made by providing a sacrificial substrate and depositing an adhesive layer over the sacrificial substrate. A first conductive layer is formed over the adhesive layer. A polymer pillar is formed over the first conductive layer. A second cond... | 03/13/2012 |
| 8130495 | Audio amplifier in compact case with peak voltage and current limiting circuit and thermal cooling tunnel An audio sound system has a printed circuit board disposed within a compact case. The PCB has a power conversion circuit for generating an operating potential, audio amplifier circuit coupled for receiving the operating potential to amplify an audio signal, and peak... | 03/06/2012 |
| 8129845 | Semiconductor device and method of forming interconnect structure in non-active area of wafer A semiconductor wafer includes a plurality of semiconductor die. Contact pads are formed on an active area of the semiconductor die and non-active area of the semiconductor wafer between the semiconductor die. Solder bumps are formed on the contact pads in both the ... | 03/06/2012 |
| 8129841 | Solder joint flip chip interconnection A flip chip interconnect has a tapering interconnect structure, and the area of contact of the interconnect structure with the site on the substrate metallization is less than the area of contact of the interconnect structure with the die pad. Also, a bond-on-lead o... | 03/06/2012 |
| 8129837 | Flip chip interconnection pad layout A flip chip interconnect pad layout has the die signal pads are arranged on the die surface near the perimeter of the die, and the die power and ground pads arranged on the die surface inboard from the signal pads; and has the signal pads on the corresponding packag... | 03/06/2012 |
| 8125073 | Wafer integrated with permanent carrier and method therefor A semiconductor device has a wafer for supporting the device and a conductive layer formed over a top surface of the wafer. A carrier wafer is permanently bonded over the conductive layer. Within the wafer and the carrier wafer, an interconnect structure is formed. ... | 02/28/2012 |
| 8124490 | Semiconductor device and method of forming passive devices A flip chip semiconductor device has a substrate with a plurality of active devices formed thereon. A passive device is formed on the substrate by depositing a first conductive layer over the substrate, depositing an insulating layer over the first conductive layer,... | 02/28/2012 |
| 8120183 | Method of forming top electrode for capacitor and interconnection in integrated passive device (IPD) A method of manufacturing a semiconductor device includes providing a substrate having a first conductive layer disposed on a top surface of the substrate. A high resistivity layer is formed over the substrate and the first conductive layer. A dielectric layer is de... | 02/21/2012 |
| 8119450 | Interconnecting a chip and a substrate by bonding pure metal bumps and pure metal spots A method for forming metallurgical interconnections and polymer adhesion of a flip chip to a substrate includes providing a chip having a set of bumps formed on a bump side thereof and a substrate having a set of interconnect points on a metallization thereon, provi... | 02/21/2012 |
| 8111113 | Semiconductor device and method of forming thin film capacitor A semiconductor device has a first coil structure formed over the substrate. A second coil structure is formed over the substrate adjacent to the first coil structure. A third coil structure is formed over the substrate adjacent to the second coil structure. The fir... | 02/07/2012 |
| 8111112 | Semiconductor device and method of forming compact coils for high performance filter A semiconductor device has a first coil structure formed over the substrate. A second coil structure is formed over the substrate adjacent to the first coil structure. A third coil structure is formed over the substrate adjacent to the second coil structure. The fir... | 02/07/2012 |
| 8110477 | Semiconductor device and method of forming high-frequency circuit structure and method thereof A semiconductor device is made by providing an integrated passive device (IPD). Through-silicon vias (TSVs) are formed in the IPD. A capacitor is formed over a surface of the IPD by depositing a first metal layer over the IPD, depositing a resistive layer over the f... | 02/07/2012 |
| 8110441 | Method of electrically connecting a shielding layer to ground through a conductive via disposed in peripheral region around semiconductor die A semiconductor device is made by mounting a plurality of semiconductor die to a substrate, depositing an encapsulant over the substrate and semiconductor die, forming a shielding layer over the semiconductor die, creating a channel in a peripheral region around the... | 02/07/2012 |
| 8110440 | Semiconductor device and method of forming overlapping semiconductor die with coplanar vertical interconnect structure A semiconductor device is made by forming first and interconnect structures over a first semiconductor die. A third interconnect structure is formed in proximity to the first die. A second semiconductor die is mounted over the second and third interconnect structure... | 02/07/2012 |
| 8105915 | Semiconductor device and method of forming vertical interconnect structure between non-linear portions of conductive layers A semiconductor device is made by forming a first conductive layer over a first temporary carrier having rounded indentations. The first conductive layer has a non-linear portion due to the rounded indentations. A bump is formed over the non-linear portion of the fi... | 01/31/2012 |
