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| Application No. | Application Title | Issue Date |
| 20110045031 | Use of Buckysome or Carbon Nanotube for Drug Delivery Compositions and methods for administering a therapeutic agent to a mammal are disclosed. The compositions comprise either (i) vesicles comprising an amphiphilic substituted fullerene, wherein the therapeutic agent is present in the vesicle interior or between layers of... | 02/24/2011 |
| 20110044831 | MOTOR WITH HIGH PRESSURE RATED CAN An apparatus includes a motor. The motor includes a rotor, a stator disposed around the rotor, and a first high pressure rated can separating the stator from the rotor. The first high pressure rated can at least partially defines a rotor cavity encompassing at least a p... | 02/24/2011 |
| 20110033039 | METHOD AND APPARATUS FOR CONTROLLING RINGING VOLTAGE A method for controlling power dissipated in a subscriber line interface circuit includes measuring a power parameter of the subscriber line interface circuit during a ringing cycle, comparing the measured power parameter to a target power parameter and adjusting at lea... | 02/10/2011 |
| 20110033038 | METHOD AND APPARATUS FOR BATTERY SWITCHING DURING RINGING A method for providing a ringing signal includes providing a plurality of batteries coupled to a subscriber line interface circuit operable to generate the ringing signal during a ringing cycle and switching selected batteries during the ringing cycle based on values of... | 02/10/2011 |
| 20110033031 | METHOD AND APPARATUS FOR DETECTING RING TRIP PRECURSORS A method for controlling a ringing signal includes generating a ringing signal on a subscriber line, detecting a condition indicative of the subscriber line going off-hook and reducing an amplitude of the ringing signal responsive to detecting the condition. A line card... | 02/10/2011 |
| 20110026424 | Triggering Migration of a Network Access Agent Associated with an Access Terminal A method is provided for triggering migration of call session state information. The method includes determining whether to migrate a network access agent associated with an access terminal in a wireless communication system based on at least one of mobility information... | 02/03/2011 |
| 20110014482 | DUCTILE MULTILAYER SILICONE RESIN FILMS The present invention provides a method of forming ductile multilayer silicone resin films. The method may include forming a silicone resin film comprising at least two polymer layers, at least one of them being a silicone resin layer. The thickness of the silicone resi... | 01/20/2011 |
| 20110003441 | LIGHT ACTIVATED SILICON CONTROLLED SWITCH The present invention provides an optically triggered switch and a method of forming the optically triggered switch. The optically triggered switch includes a silicon layer having at least one trench formed therein and at least one silicon diode formed in the silicon la... | 01/06/2011 |
| 20100330808 | CAP LAYER REMOVAL IN A HIGH-K METAL GATE STACK BY USING AN ETCH PROCESS In a replacement gate approach, the dielectric cap layers of the gate electrode structures are removed in a separate removal process, such as a plasma assisted etch process, in order to provide superior process conditions during the subsequent planarization of the inter... | 12/30/2010 |
| 20100330790 | TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE APPROACH BY MODIFYING A REMOVAL RATE OF STRESSED DIELECTRIC OVERLAYERS In a replacement gate approach, the sacrificial gate material is exposed on the basis of enhanced process uniformity, for instance during a wet chemical etch step or a CMP process, by forming a modified portion in the interlayer dielectric material by ion implantation. ... | 12/30/2010 |
| 20100330757 | ENHANCED CAP LAYER INTEGRITY IN A HIGH-K METAL GATE STACK BY USING A HARD MASK FOR OFFSET SPACER PATTERNING When forming transistor elements on the basis of sophisticated high-k metal gate structures, the efficiency of a replacement gate approach may be enhanced by more efficiently adjusting the gate height of transistors of different conductivity type when the dielectric cap... | 12/30/2010 |
| 20100327373 | UNIFORM HIGH-K METAL GATE STACKS BY ADJUSTING THRESHOLD VOLTAGE FOR SOPHISTICATED TRANSISTORS BY DIFFUSING A METAL SPECIES PRIOR TO GATE PATTERNING Sophisticated gate electrode structures for N-channel transistors and P-channel transistors are patterned on the basis of substantially the same configuration while, nevertheless, the work function adjustment may be accomplished in an early manufacturing stage. For this... | 12/30/2010 |
| 20100327368 | ENHANCING SELECTIVITY DURING FORMATION OF A CHANNEL SEMICONDUCTOR ALLOY BY A WET OXIDATION PROCESS High-k metal gate electrode structures are formed on the basis of a threshold adjusting semiconductor alloy formed in the channel region of one type of transistor, which may be accomplished on the basis of selective epitaxial growth techniques using an oxide hard mask g... | 12/30/2010 |
| 20100327367 | CONTACT OPTIMIZATION FOR ENHANCING STRESS TRANSFER IN CLOSELY SPACED TRANSISTORS By appropriately designing the geometric configuration of a contact level of a sophisticated semiconductor device, the tensile stress level of contact elements in N-channel transistors may be increased, while the tensile strain component of contact elements caused in th... | 12/30/2010 |
| 20100327362 | NON-INSULATING STRESSED MATERIAL LAYERS IN A CONTACT LEVEL OF SEMICONDUCTOR DEVICES In sophisticated semiconductor devices, non-insulating materials with extremely high internal stress level may be used in the contact level in order to enhance performance of circuit elements, such as field effect transistors, wherein the non-insulating material may be ... | 12/30/2010 |
| 20100327358 | SEMICONDUCTOR ELEMENT FORMED IN A CRYSTALLINE SUBSTRATE MATERIAL AND COMPRISING AN EMBEDDED IN SITU N-DOPED SEMICONDUCTOR MATERIAL The PN junction of a substrate diode in a sophisticated semiconductor device may be formed on the basis of an embedded in situ N-doped semiconductor material thereby providing superior diode characteristics. For example, a silicon/carbon semiconductor material may be fo... | 12/30/2010 |
| 20100322858 | Radiohaloimatinibs and Methods of Their Synthesis and Use in PET Imaging of Cancers We disclose methods of synthesizing radiohalidated organic compounds and their use in positron emission tomography (PET) imaging of cancer cells.... | 12/23/2010 |
| 20100322158 | INDICATING DYNAMIC ALLOCATION OF COMPONENT CARRIERS IN MULTI-COMPONENT CARRIER SYSTEMS The present invention provides a method involving an access network and user equipment that supports communication over an air interface using a plurality of component carriers. The method includes transmitting information indicating that a first component carrier is an... | 12/23/2010 |
| 20100310972 | PERFORMING DOUBLE EXPOSURE PHOTOLITHOGRAPHY USING A SINGLE RETICLE A reticle includes a first pattern formed in a first die flash region of the reticle and a second pattern different than the first pattern formed in a second die flash region of the reticle. A method for patterning a wafer having a plurality of die regions defined there... | 12/09/2010 |
| 20100305737 | TUNING A PROCESS CONTROLLER BASED ON A DYNAMIC SAMPLING RATE A method for estimating a state of a process implemented by a tool for fabricating workpieces includes collecting metrology data associated with a subset of workpieces processed in the tool. The collecting exhibits an irregular pattern. Metrology data associated with a ... | 12/02/2010 |
| 20100304566 | ESTABLISHING A HYDROPHOBIC SURFACE OF SENSITIVE LOW-K DIELECTRICS OF MICROSTRUCTURE DEVICES BY IN SITU PLASMA TREATMENT Silicon oxide based low-k dielectric materials may receive superior hydrophobic surface characteristics on the basis of a plasma treatment using hydrogen and carbon containing radicals. For this purpose, the surface of the low-k dielectric material may be exposed to the... | 12/02/2010 |
| 20100304542 | ENHANCED ETCH STOP CAPABILITY DURING PATTERNING OF SILICON NITRIDE INCLUDING LAYER STACKS BY PROVIDING A CHEMICALLY FORMED OXIDE LAYER DURING SEMICONDUCTOR PROCESSING A gate electrode structure may be formed on the basis of a silicon nitride cap material in combination with a very thin yet uniform silicon oxide based etch stop material, which may be formed on the basis of a chemically driven oxidation process. Due to the reduced thic... | 12/02/2010 |
| 20100304333 | EXPANDABLE DENTAL IMPLANT An expandable dental implant is provided. The dental implant comprises a crown portion, an expandable root and a cam. The expandable root portion has a plurality of members pivotally coupled to the crown portion. The cam is coupled to the crown portion and is slidably e... | 12/02/2010 |
| 20100301494 | RE-ESTABLISHING A HYDROPHOBIC SURFACE OF SENSITIVE LOW-K DIELECTRICS IN MICROSTRUCTURE DEVICES Silicon oxide based low-k dielectric materials may be provided with a hydrophobic low-k surface area, even after exposure to a reactive process ambient, by performing a surface treatment on the basis of hexamethylcyclotrisilazane and/or octamethylcyclotetrasilazane. In ... | 12/02/2010 |
| 20100301489 | MICROSTRUCTURE DEVICE INCLUDING A METALLIZATION STRUCTURE WITH SELF-ALIGNED AIR GAPS FORMED BASED ON A SACRIFICIAL MATERIAL In a sophisticated metallization system of a semiconductor device, air gaps may be formed in a self-aligned manner on the basis of a sacrificial material, such as a carbon material, which is deposited after the patterning of a dielectric material for forming therein a v... | 12/02/2010 |
| 20100301486 | HIGH-ASPECT RATIO CONTACT ELEMENT WITH SUPERIOR SHAPE IN A SEMICONDUCTOR DEVICE FOR IMPROVING LINER DEPOSITION Contact elements of sophisticated semiconductor devices may be formed by lithographical patterning, providing a spacer element for defining the final critical width in combination with increasing a width of the contact opening prior to depositing the spacer material. Th... | 12/02/2010 |
| 20100301427 | WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES BY SELECTIVELY REMOVING A BARRIER LAYER In a replacement gate approach in sophisticated semiconductor devices, a tantalum nitride etch stop material may be efficiently removed on the basis of a wet chemical etch recipe using ammonium hydroxide. Consequently, a further work function adjusting material may be f... | 12/02/2010 |
| 20100301421 | STRAIN ENHANCEMENT IN TRANSISTORS COMPRISING AN EMBEDDED STRAIN-INDUCING SEMICONDUCTOR ALLOY BY CREATING A PATTERNING NON-UNIFORMITY AT THE BOTTOM OF THE GATE ELECTRODE Performance of P-channel transistors may be enhanced on the basis of an embedded strain-inducing semiconductor alloy by forming a gate electrode structure on the basis of a high-k dielectric material in combination with a metal-containing cap layer in order to obtain an... | 12/02/2010 |
| 20100301416 | STRAIN TRANSFORMATION IN BIAXIALLY STRAINED SOI SUBSTRATES FOR PERFORMANCE ENHANCEMENT OF P-CHANNEL AND N-CHANNEL TRANSISTORS In advanced SOI devices, a high tensile strain component may be achieved on the basis of a globally strained semiconductor layer, while at the same time a certain compressive strain may be induced in P-channel transistors by appropriately selecting a height-to-length as... | 12/02/2010 |
| 20100297072 | Combinations of Immunostimulatory Agents, Oncolytic Virus, and Additional Anticancer Therapy A method comprising administering, to a mammal, an oncolytic virus and an immunostimulatory agent. A method of treating a first tumor, a second tumor, or both in a mammal having a first tumor, comprising administering an oncolytic virus into the first tumor; and adminis... | 11/25/2010 |
| 20100289125 | ENHANCED ELECTROMIGRATION PERFORMANCE OF COPPER LINES IN METALLIZATION SYSTEMS OF SEMICONDUCTOR DEVICES BY SURFACE ALLOYING In sophisticated semiconductor devices, the electromigration performance of copper metal lines at the top interface thereof may be enhanced by forming a copper alloy that is locally restricted to the interface. To this end, an appropriate alloy-forming species, such as ... | 11/18/2010 |
| 20100289114 | SEMICONDUCTOR ELEMENT FORMED IN A CRYSTALLINE SUBSTRATE MATERIAL AND COMPRISING AN EMBEDDED IN SITU DOPED SEMICONDUCTOR MATERIAL The PN junction of a substrate diode in a sophisticated SOI device may be formed on the basis of an embedded in situ doped semiconductor material, thereby providing superior diode characteristics. For example, a silicon/germanium semiconductor material may be formed in ... | 11/18/2010 |
| 20100289094 | ENHANCING DEPOSITION UNIFORMITY OF A CHANNEL SEMICONDUCTOR ALLOY BY AN IN SITU ETCH PROCESS When forming sophisticated gate electrode structures requiring a threshold adjusting semiconductor alloy for one type of transistor, a recess is formed in the corresponding active region, thereby providing superior process uniformity during the deposition of the semicon... | 11/18/2010 |
| 20100289090 | ENHANCING UNIFORMITY OF A CHANNEL SEMICONDUCTOR ALLOY BY FORMING STI STRUCTURES AFTER THE GROWTH PROCESS When forming sophisticated gate electrode structures of transistor elements of different type, the threshold adjusting channel semiconductor alloy may be provided prior to forming isolation structures, thereby achieving superior uniformity of the threshold adjusting mat... | 11/18/2010 |
| 20100289089 | ADJUSTING THRESHOLD VOLTAGE FOR SOPHISTICATED TRANSISTORS BY DIFFUSING A GATE DIELECTRIC CAP LAYER MATERIAL PRIOR TO GATE DIELECTRIC STABILIZATION Sophisticated gate electrode structures may be formed by providing a cap layer including a desired species that may diffuse into the gate dielectric material prior to performing a treatment for stabilizing the sensitive gate dielectric material. In this manner, complex ... | 11/18/2010 |
| 20100289083 | MULTI-STEP DEPOSITION OF A SPACER MATERIAL FOR REDUCING VOID FORMATION IN A DIELECTRIC MATERIAL OF A CONTACT LEVEL OF A SEMICONDUCTOR DEVICE In advanced semiconductor devices, spacer elements may be formed on the basis of a multi-station deposition technique, wherein a certain degree of variability of the various sub-layers of the spacer materials, such as a different thickness, may be applied in order to en... | 11/18/2010 |
| 20100289081 | REDUCED SILICON THICKNESS OF N-CHANNEL TRANSISTORS IN SOI CMOS DEVICES In sophisticated SOI devices, the thickness of the active semiconductor layer in the N-channel transistor may be reduced compared to the P-channel transistor for a given transistor configuration, thereby obtaining a significant increase in performance of the N-channel t... | 11/18/2010 |
| 20100289080 | SEMICONDUCTOR DEVICE COMPRISING METAL GATES AND A SILICON CONTAINING RESISTOR FORMED ON AN ISOLATION STRUCTURE In a semiconductor device comprising sophisticated high-k metal gate structures formed in accordance with a replacement gate approach, semiconductor-based resistors may be formed above isolation structures substantially without being influenced by the replacement gate a... | 11/18/2010 |
| 20100285486 | Non-Invasive Detection of Bladder Cancer by Fluorescence in Situ Hybridization of Aurora A We disclose a method of detecting bladder cancer in a patient, comprising isolating bladder cells from the patient's urine; hybridizing the bladder cells with a labelled DNA probe, wherein the probe recognizes at least a portion of the aurora kinase A gene, to yield a s... | 11/11/2010 |
| 20100284088 | DICHROIC FILTERS FORMED USING SILICON CARBIDE BASED LAYERS The present invention provides a method of forming a flexible dichroic optical filter. The method comprises depositing a plurality of pairs of layers adjacent a substrate. Each of the plurality of pairs of layers includes a first layer formed of a silicon-and-carbon con... | 11/11/2010 |
