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Patent No. 5678617

Method and apparatus for making a drink hop along a bar or counter

A method for generating a drink which appears to hop from a remote spot on the bar or counter and take one or more leaps, before landing in a patron's glass.

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Attorney: STEPHEN B. ACKERMAN


Number of applications: 406
Last date: December 04, 2008

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Application No.Application TitleIssue Date
20080299679Low resistance tunneling magnetoresistive sensor with composite inner pinned layer
A high performance TMR sensor is fabricated by employing a composite inner pinned (AP1) layer in an AP2/Ru/AP1 pinned layer configuration. In one embodiment, there is a 10 to 80 Angstrom thick lower CoFeB or CoFeB alloy layer on the Ru coupling laye...
12/04/2008
20080297945Method to make a perpendicular magnetic recording head with a bottom side shield
A perpendicular magnetic recording (PMR) head is fabricated with a pole tip shielded laterally by a separated pair of bottom side shields and shielded from above by an upper shield. The bottom side shields surround a lower portion of the pole tip while the upper portion...
12/04/2008
20080278864Novel CPP device with an enhanced dR/R ratio
A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n con...
11/13/2008
20080273276Optimized write pole flare angle for side shield or semi side shield PMR writer application
Improved writability and a reduction in adjacent track erasure are achieved in a PMR writer with a large flare angle of 45 and 90 degrees in the main write pole and a full side shield or partial side shield configuration around the narrow write pole section and write po...
11/06/2008
20080272771Magnetic tunnel junction (MTJ) based magnetic field angle sensor
A magnetic field angle sensor for measurement of a magnetic field angle over a 360° range has magnetic tunnel junction elements oriented at multiple angles. The magnetic field angle sensor includes multiple magnetic tunnel junction elements formed on a substrate that h...
11/06/2008
20080273277Composite shield structure of PMR writer for high track density
Improved writability and a substantial reduction in adjacent track erasure are achieved by incorporating a composite shield structure in a PMR writer. There is a trailing shield formed a certain distance above the top surface of a write pole, a leading shield formed a c...
11/06/2008
20080266943Spin-torque MRAM: spin-RAM, array
A spin-torque MRAM array has MRAM cells arranged in rows and columns. Bit lines are connected to each of the MRAM cells on each column. Source select lines are connected to each MRAM cell of a pair of rows and are oriented orthogonally to the bit lines. Write lines are ...
10/30/2008
20080258721MTJ sensor including domain stable free layer
By subdividing the free layer of a GMR/TMR device into multiple sub-elements that share common top and bottom electrodes, a magnetic detector is produced that is domain stable in the presence of large stray fields, thereby eliminating the need for longitudinal bias magn...
10/23/2008
20080253035Self-aligned full side shield PMR and method to make it
A process for forming the write pole of a PMR head is described. This write pole is symmetrically located relative to its side shields, This is accomplished, not through optical alignment, but by coating the pole with a uniform layer of non-magnetic material of a predet...
10/16/2008
20080253178MRAM with enhanced programming margin
An MRAM that is not subject to accidental writing of half-selected memory elements is described, together with a method for its manufacture. The key features of this MRAM are a C-shaped memory element used in conjunction with a segmented bit line architecture....
10/16/2008
20080246103MR device with surfactant layer within the free layer
The dR/R ratios of TMR and GMR devices, having a FeCo/NiFe type of free layer, have been significantly increased by inserting a suitable surfactant layer within (as opposed to above or below) the free layer. Our preferred surfactant material has been oxygen but similar-...
10/09/2008
20080239589Spin transfer MRAM device with novel magnetic synthetic free layer
We describe a CPP MTJ MRAM element that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a nov...
10/02/2008
20080243419Photon transfer curve test time reduction
An improved method for photon transfer curve (PTC) testing in an image sensor is described. A cost and time savings is achieved by reducing the number of frames necessary for measurements to two that are generated by illuminating a first plurality of pixel rows at a fir...
10/02/2008
20080231992Metal oxynitride adhesion/corrosion barrier layer and a diamond-like carbon overcoat
A method for forming a protective bilayer on a magnetic read/write head or magnetic disk. The bilayer is formed as an adhesion enhancing and corrosion resistant underlayer and a protective diamond-like carbon (DLC) overlayer. The underlayer is formed of transition metal...
09/25/2008
20080225583Spin transfer MRAM device with novel magnetic free layer
We describe a CPP MTJ MRAM element that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a nov...
09/18/2008
20080225427Dynamic flying height design with off-track contact capability at touch down in hard disk drives
Dynamic fly height (DFH) control is obtained for a read/write head by use of a heating element having two laterally separated heat sources symmetrically spaced around the track center line of the head. The two heating sources create a protrusion profile relative to the ...
09/18/2008
20080225576Method of magnetic tunneling junction pattern layout for magnetic random access memory
An MTJ pattern layout for a memory device is disclosed that includes two CMP assist features outside active MTJ device blocks. A first plurality of dummy MTJ devices is located in two dummy bands formed around an active MTJ device block. The inner dummy band is separate...
09/18/2008
20080221432Low temperature method to enhance detection of magnetic beads
Detection of magnetic beads at temperature below room temperature can increase the signal level significantly as compared to the same detection when performed at room temperature. Additional improvement is obtained if the beads are below 30 nm in size and if deviations ...
09/11/2008
20080219042Magnetic memory cell
By inserting a spin polarizing layer (typically pure iron) within the free layer of a MTJ or GMR memory cell, dR/R can be improved without significantly affecting other free layer properties such as Hc. Additional performance improvements can be achieved by also inserti...
09/11/2008
20080217710Novel SyAF structure to fabricate Mbit MTJ MRAM
A MTJ that minimizes error count (EC) while achieving high MR value, low magnetostriction, and a RA of about 1100 Ω-μm2 for 1 Mbit MRAM devices is disclosed. The MTJ has a composite AP1 pinned layer made of a lower amorphous Co60Fe20B<...
09/11/2008
20080218899Quiet high performance seek procedure for disk drives
a seek procedure for a hard disk drive which provides a significant reduction in acoustic noise as well as high performance fast seek times is described. The seek procedure lowers the peak acceleration for short seeks and imparts a smooth transition from a sine seek to ...
09/11/2008
20080197021Method to make superior soft (low Hk), high moment magnetic film and its application in writer heads
A process sequence for forming a soft magnetic layer having Hce and Hch of ≦2 Oe, Hk≦5 Oe, and Bs of ≧24 kG is disclosed. A CoFe or CoFe alloy is electroplated in a 10O C to 25O C. bath (pH 2 to 3) containing Co+2 and Fe+2
08/21/2008
20080201003Method and system for reticle scheduling
Methods and systems for reticle scheduling in semiconductor manufacturing providing a trade-off between complying with level priority and maximizing scanner utilization for critical scanners as a whole is disclosed. The extent of trade-off is specified by user, dependin...
08/21/2008
20080195241Method and system for wafer lot order
Methods and systems for wafer lot ordering using including estimation of allowable queue time based on utilization loss and rework percentage have been achieved. The method invented comprises steps of ranking lots, allocating equipment to the exit step of queue time, ca...
08/14/2008
20080192388Uniformity in CCP magnetic read head devices
Improved performance uniformity among CPP magnetic read devices that include an oxide barrier has been achieved by fabricating the oxide layer from at least two separately formed CCP layers. Each CCP layer is given its own PIT and IAO treatment which is of shorter durat...
08/14/2008
20080187781Magnetic recording head and media overcoat
A method for forming a protective bilayer on a substrate that is a magnetic read/write head or a magnetic recording medium. The bilayer is formed as an adhesion enhancing and corrosion resistant underlayer and a protective diamond-like carbon (DLC) overlayer. The underl...
08/07/2008
20080179699Novel magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current
A MTJ that minimizes spin-transfer magnetization switching current (Jc) in a Spin-RAM to <1×106 A/cm2 is disclosed. The MTJ has a Co60Fe20B20/MgO/Co60Fe20B20 configuration where the...
07/31/2008
20080176108Magnetic recording head and media comprising aluminum oxynitride underlayer and a diamond-like carbon overcoat
A method for forming a protective bilayer on a magnetic read/write head or magnetic disk. The bilayer is formed as an adhesion enhancing underlayer and a protective diamond-like carbon (DLC) overlayer. The underlayer is formed of an aluminum or alloyed aluminum oxynitri...
07/24/2008
20080177399Method of process trend matching for identification of process variable
A method that involves matching the trend of process outcome with the trend of process variables to identify the variables that have an impact on the process outcome is disclosed. The method for process trend matching comprises processing of raw data of process outcome ...
07/24/2008
20080171223TMR device with Hf based seed layer
A MTJ structure is disclosed in which the seed layer is made of a lower Ta layer, a middle Hf layer, and an upper NiFe or NiFeX layer where X is Co, Cr, or Cu. Optionally, Zr, Cr, HfZr, or HfCr may be employed as the middle layer and materials having FCC structures such...
07/17/2008
20080151614Spin transfer MRAM device with magnetic biasing
The addition of segmented write word lines to a spin-transfer MRAM structure serves to magnetically bias the free layer so that the precessional motion of the magnetization vector that is set in play by the flow of spin polarized electrons into the free layer allows sai...
06/26/2008
20080136933Apparatus for controlling operation of a multiple photosensor pixel image sensor
An apparatus for controlling operation of a color multiple sensor pixel image sensor includes a row control circuit in communication with rows of the array of plurality of color multiple sensor pixel image sensors. The control apparatus generates reset control signals, ...
06/12/2008
20080136387Buck converter with inductor pre-energizing
Circuits and methods to achieve a buck-boost converter, capable to achieve a constant output voltage by pre-charging of an inductor if the input voltage is close to the output voltage has been achieved. The prior art problem of output voltage variations occurring while ...
06/12/2008
20080130031Apparatus and method for shift invariant differential (SID) image data interpolation in fully populated shift invariant matrix
An image processing system for interpolating image data is comprised of a shift invariant point determining device, an illumination averager, a second order differentiator, and color data calculator. The shift invariant point determining device ascertains shift invarian...
06/05/2008
20080129841High performance imager IC with minimum peripheral circuits
An imaging system provides a serial video signal that is indicative of the intensity of the light. The imaging system has an array of pixel image sensors arranged in rows and columns. A control circuit is in communication with the rows of the array and the plurality of ...
06/05/2008
20080124001Apparatus and method for shift invariant differential (SID) image data interpolation in non-fully populated shift invariant matrix
An image processing system interpolates image data of an image array by ascertaining shift invariant points and non-shift invariant points within the array. The average illumination and the second order derivative are determined for the shift invariant locations. The se...
05/29/2008
20080117552Enhanced hard bias in thin film magnetoresistive sensors with perpendicular easy axis growth of hard bias and strong shield-hard bias coupling
A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that is based on HB easy axis growth perpendicular to an underlying seed layer which is formed above a substrate and along two sidewalls of the sensor. In one embodiment, a co...
05/22/2008
20080106602On chip test mode implementation
An improved on chip test method for determining the photon transfer curve (PTC) and dark current in an image sensor is described. Cost and time savings is achieved by reducing the number of frames necessary for the measurements to three including two exposure frames and...
05/08/2008
20080099898Die-up integrated circuit package with grounded stiffener
A printed circuit substrate is disposed on a bottom side of a stiffener. An IC die is disposed on a top side of the stiffener. The die is electrically connected onto the printed circuit substrate by wire bonding through an open slot in the stiffener. The die is not wire...
05/01/2008
20080101117Trap-charge non-volatile switch connector for programmable logic
A nonvolatile trap charge storage cell selects a logic interconnect transistor uses in programmable logic applications, such as FPGA. The nonvolatile trap charge element is an insulator located under a control gate and above an oxide on the surface of a semiconductor su...
05/01/2008
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