Mountable Printable Placard With Headband
A resilient headband in a shape for being mounted on the head of the user. The headband is equipped with a longitudinal slotted member for holding a placard.
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7361558 | Method of manufacturing a closed cell trench MOSFET Embodiments of the present invention provide an improved closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The closed cell TMOSFET comprises a drain, a body region disposed above the drain region, a gate region disposed in the body regi... | 04/22/2008 |
| 7344945 | Method of manufacturing a drain side gate trench metal-oxide-semiconductor field effect transistor Embodiments of the present invention provide a striped or closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The striped or closed cell TMOSFET comprises a source region, a body region disposed above the source region, a drift region dis... | 03/18/2008 |
| 7335946 | Structures of and methods of fabricating trench-gated MIS devices In a trench-gated MIS device contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench. This avoids the problem of stress at the upper corners of the trench. Contact bet... | 02/26/2008 |
| 7279743 | Closed cell trench metal-oxide-semiconductor field effect transistor Embodiments of the present invention provide an improved closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The closed cell TMOSFET comprises a drain, a body region disposed above the drain region, a gate region disposed in the body regi... | 10/09/2007 |
| 7211877 | Chip scale surface mount package for semiconductor device and process of fabricating the same A semiconductor package by which contacts are made to both sides of the dice is manufactured on a wafer scale. The back side of the wafer is attached to a metal plate. The scribe lines separating the dice are saw cut to expose the metal plate but the cuts do not ext... | 05/01/2007 |
| 6552889 | Current limiting technique for hybrid power MOSFET circuits A power FET and a replica FET on a semiconductor chip coupled to a logic control circuit on a second semiconductor chip within a single housing. A power FET and a scaled down replica of the power FET are disposed on a semiconductor chip. The power FET is ... | 04/22/2003 |