Quotables
"It is my heart-warmed and world-embracing Christmas hope and aspiration that all of us, the high, the low, the rich, the poor, the admired, the despised, the loved, the hated, the civilized, the savage (every man and brother of us all throughout the whole earth), may eventually be gathered together in a heaven of everlasting rest and peace and bliss, except the inventor of the telephone. "
Mark Twain ; Christmas greetings, 1890
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| Number | Title | Issue Date |
| 7462844 | Method, system, and apparatus for improving doping uniformity in high-tilt ion implantation The invention provides a method, system, and apparatus for improving doping uniformity during ion implantation, particularly during a high-tilt ion implantation. In one embodiment, the invention provides a method for improving doping uniformity in a high-tilt ion im... | 12/09/2008 |
| 7459704 | Ion source configuration for production of ionized clusters, ionized molecules and ionized mono-atoms Ion sources and methods for generating molecular ions in a cold operating mode and for generating atomic ions in a hot operating mode are provided. In some embodiments, first and second electron sources are located at opposite ends of an arc chamber. The first elect... | 12/02/2008 |
| 7459703 | Ion implant beam angle integrity monitoring and adjusting A system, method and program product for monitoring the beam angle integrity of an ion beam generated by an ion implanter system are disclosed. The invention utilizes at least one template with each template having a template surface that impedes the motion of an io... | 12/02/2008 |
| 7459692 | Electron confinement inside magnet of ion implanter A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy ... | 12/02/2008 |
| 7453069 | Bushing unit with integrated conductor in ion accelerating device and related method An ion accelerating device includes a series of bushing units and a series of resistor circuit units. Each resistor circuit unit is coupled to one bushing unit. A bushing unit includes three integrated conductors to establish connections to the coupled resistor circ... | 11/18/2008 |
| 7453059 | Technique for monitoring and controlling a plasma process A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned in the housing. An extractor electrode is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality ... | 11/18/2008 |
| 7446326 | Technique for improving ion implanter productivity A technique for improving ion implanter productivity is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving productivity of an ion implanter having an ion source chamber. The method may comprise supplying a gase... | 11/04/2008 |
| 7442944 | Ion beam implant current, spot width and position tuning An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes th... | 10/28/2008 |
| 7439526 | Beam neutralization in low-energy high-current ribbon-beam implanters The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms. When employing such beams, the addition of electrons or negative ions for neutralizing the effects of space ... | 10/21/2008 |
| 7413596 | Method and apparatus for the production of purified liquids and vapors The present invention provides methods and apparatus for the production of liquids and vapors that are free of, or substantially free of, dissolved or trapped gases. In one embodiment, a liquid is placed in a sealed vessel and subjected to a temperature below the fr... | 08/19/2008 |
| 7402816 | Electron injection in ion implanter magnets One or more electron sources are utilized to inject electrons into an ion beam being transported between the polepieces of a magnet. In some embodiments, the electron sources are located in cavities in one or both polepieces of the magnet. In other embodiments, a ra... | 07/22/2008 |
| 7402820 | Ion beam contamination determination A system, method and program product for determining contamination of an ion beam are disclosed. In the event of an isobaric interference, or near isobaric interference between a contaminant ion and an expected ion of an ion beam, which is difficult to detect, it is... | 07/22/2008 |
| 7397049 | Determining ion beam parallelism using refraction method A system, method and program product for determining parallelism of an ion beam using a refraction method, are disclosed. One embodiment includes determining a first test position of the ion beam while not exposing the ion beam to an acceleration/deceleration electr... | 07/08/2008 |
| 7397048 | Technique for boron implantation A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coup... | 07/08/2008 |
| 7397047 | Technique for tuning an ion implanter system A technique for tuning an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for tuning an ion implanter system having multiple beam-line elements. The method may comprise establishing one or more rel... | 07/08/2008 |
| 7396746 | Methods for stable and repeatable ion implantation A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system having a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber, an anode spaced from th... | 07/08/2008 |
| 7394078 | Technique for ion beam angle spread control for advanced applications A technique for ion beam angle spread control for advance applications is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control for advanced applications. The method may comprise directing one ... | 07/01/2008 |
| 7394079 | Architecture for ribbon ion beam ion implanter system An architecture for a ribbon ion beam ion implanter system is disclosed. In one embodiment, the architecture includes an acceleration/deceleration parallelizing lens system for receiving a fanned ribbon ion beam and for at least parallelizing (and perhaps also accel... | 07/01/2008 |
| 7394073 | Methods and apparatus for ion beam angle measurement in two dimensions An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least ... | 07/01/2008 |
| 7391038 | Technique for isocentric ion beam scanning A technique for isocentric ion beam scanning is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for isocentric ion beam scanning. The apparatus may comprise an end station having a mechanism for holding and translatin... | 06/24/2008 |
| 7383141 | Faraday system integrity determination A system, method and program product for determining the integrity of a faraday system are disclosed. The invention uses a computer infrastructure to control an automatic determination of a faraday system integrity, when the faraday system is not in operation. The d... | 06/03/2008 |
| 7378335 | Plasma implantation of deuterium for passivation of semiconductor-device interfaces A method for fabricating a semiconductor-based device includes providing a substrate including a semiconductor layer, forming a gate dielectric layer on the semiconductor layer, forming a plasma including deuterium, plasma implanting deuterium from the plasma into t... | 05/27/2008 |
| 7365340 | Resonance method for production of intense low-impurity ion beams of atoms and molecules The present invention comprehends a compact and economical apparatus for producing high intensities of a wide variety of wanted positive and negative molecular and atomic ion beams that have been previously impossible to previously produce at useful intensities. In ... | 04/29/2008 |
| 7361913 | Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station that mechanically scans the wafer across the normal b... | 04/22/2008 |
| 7358510 | Ion implanter with variable scan frequency An ion implanter includes an ion beam generator configured to generate an ion beam, a scanner configured to scan the ion beam in at least one direction at a scan frequency, and a controller. The controller is configured to control the scan frequency in response to a... | 04/15/2008 |
| 7355188 | Technique for uniformity tuning in an ion implanter system A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. Th... | 04/08/2008 |
| 7351984 | Controlling the characteristics of implanter ion-beams A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and... | 04/01/2008 |
| 7348576 | Technique for ion beam angle process control A technique for ion beam angle process control is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle process control in an ion implanter system. The method may comprise directing one or more ion beams at a... | 03/25/2008 |
| 7342240 | Ion beam current monitoring An ion beam monitoring system includes a charge neutralization system and a sensor. The charge neutralization system is configured to provide a compensating current to control a charge on a front surface of a wafer. The sensor is configured to sense the compensating... | 03/11/2008 |
| 7339179 | Technique for providing a segmented electrostatic lens in an ion implanter A technique for providing a segmented electrostatic lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as an electrostatic lens for use in an ion implanter. The lens may comprise an entrance electrode biased ... | 03/04/2008 |
| RE40008 | Method and apparatus for controlling ion implantation during vacuum fluctuation A method and apparatus for controlling implantation during vacuum fluctuations along a beam line. Vacuum fluctuations may be detected based on a detected beam current and/or may be compensated for without measuring pressure in an implantation chamber. A reference le... | 01/22/2008 |
| RE40009 | Methods and apparatus for adjusting beam parallelism in ion implanters Methods and apparatus for implanting ions in a workpiece, such as a semiconductor wafer, include generating an ion beam, measuring parallelism of the ion beam, adjusting the ion beam for a desired parallelism based on the measured parallelism, measuring a beam direc... | 01/22/2008 |
| 7309997 | Monitor system and method for semiconductor processes A monitor system and method for characterizing semiconductor processes including ion implantation processes is provided. The system includes a test wafer which has a plurality of sensors formed on its surface. The test wafer may be loaded into the process chamber of... | 12/18/2007 |
| 7282721 | Method and apparatus for tuning ion implanters Methods and apparatus are provided for automatically tuning a charged particle beam system, such as an ion implanter. In one embodiment, a control parameter of a control component located upstream of a target component is modulated, and the beam current downstream o... | 10/16/2007 |
| 7279687 | Technique for implementing a variable aperture lens in an ion implanter A technique for implementing a variable aperture lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as a variable aperture lens. The variable aperture lens may comprise a first electrode element. The variable... | 10/09/2007 |
| 7276847 | Cathode assembly for indirectly heated cathode ion source A cathode in an indirectly heated cathode ion source is supported by at least one rod or pin. The cathode is preferably in the form of a disk, and the support rod is smaller in diameter than the disk to limit thermal conduction and radiation. In one embodiment, the ... | 10/02/2007 |
| 7253423 | Technique for uniformity tuning in an ion implanter system A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for uniformity tuning in an ion implanter system. The method may comprise measuring an ion beam at a pluralit... | 08/07/2007 |
| 7250617 | Ion beam neutral detection An ion beam neutral detector system, an ion implanter system including the detector system and a method of detecting ion beam neutrals that ensures an ion implant is meeting contamination requirements are disclosed. The detector includes an energy contamination moni... | 07/31/2007 |
| 7236853 | Automated robot alignment system and method using kinematic pins and end effector sensor A method and system can align a robot arm with a payload station. A probe and a contact detector may be positioned on the robot arm and three pins may be placed on the payload station. A controller may move the robot arm in a pattern over the payload station until c... | 06/26/2007 |
| 7223984 | Helium ion generation method and apparatus The invention provides methods and apparatus for generating helium ions. The methods involve providing a mixture of helium gas with a second gas in an ion source. The second gas has a lower ionization potential and larger molecules than that of helium. The helium ga... | 05/29/2007 |
