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Walt Disney was no Mickey Mouse inventor. He devised a serious animation camera which he patented. With the device, his company created "Snow White".
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| Number | Title | Issue Date |
| 7294427 | Manifold gasket accommodating differential movement of fuel cell stack A gasket for use in a fuel cell system having at least one externally manifolded fuel cell stack, for sealing the manifold edge and the stack face. In accordance with the present invention, the gasket accommodates differential movement between the stack and manifold... | 11/13/2007 |
| 7288136 | High capacity immobilized amine sorbents A method is provided for making low-cost CO2 sorbents that can be used in large-scale gas-solid processes. The improved method entails treating an amine to increase the number of secondary amine groups and impregnating the amine in a porous solid support.... | 10/30/2007 |
| 7263246 | Oxygen detection using evanescent fields An apparatus and method for the detection of oxygen using optical fiber based evanescent light absorption. Methylene blue was immobilized using a sol-gel process on a portion of the exterior surface of an optical fiber for which the cladding has been removed, thereb... | 08/28/2007 |
| 7255842 | Multi-component removal in flue gas by aqua ammonia A new method for the removal of environmental compounds from gaseous streams, in particular, flue gas streams. The new method involves first oxidizing some or all of the acid anhydrides contained in the gas stream such as sulfur dioxide (SO2) and nitric o... | 08/14/2007 |
| 7217402 | Apparatus and method for making metal chloride salt product A method of producing metal chlorides is disclosed in which chlorine gas is introduced into liquid Cd. CdCl2 salt is floating on the liquid Cd and as more liquid CdCl2 is formed it separates from the liquid Cd metal and dissolves in the salt. T... | 05/15/2007 |
| 7202411 | Photovoltaic and thermophotovoltaic devices with quantum barriers A photovoltaic or thermophotovoltaic device includes a diode formed by p-type material and n-type material joined at a p-n junction and including a depletion region adjacent to said p-n junction, and a quantum barrier disposed near or in the depletion region of the ... | 04/10/2007 |
