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| Number | Title | Issue Date |
| 7872274 | n-Electrode for III group nitride based compound semiconductor element An object of the present invention is to obtain greater reduction in resistance between an n-electrode and an n-type layer made of a Group III nitride compound semiconductor. According to the present invention, the n-electrode is formed with a first electrode materi... | 01/18/2011 |
| RE41234 | Light-emitting unit having specific fluorescent material A light-emitting device with an emission wavelength range of from 360 nm to 550 nm and a fluorescent material made of Ca—Al—Si—O—N oxynitride activated with Eu2+ are used so that a part of light emitted from the light-emitting device is emitted wh... | 04/20/2010 |
| 7576363 | Group III nitride compound semiconductor light emitting device In a group III nitride compound semiconductor light emitting device comprising an n-type semiconductor layer, a p-type semiconductor layer having a superlattice structure in which a first layer comprising at least Al and a second layer having a different composition... | 08/18/2009 |
| 7550782 | Semiconductor device having an undercoat layer and method of manufacturing the same In a semiconductor device in which a group III nitride compound semiconductor layer is formed without a low temperature grown buffer layer provided on an undercoat layer formed by a metal nitride layer, the metal nitride layer is formed of reddish brown titanium nit... | 06/23/2009 |
| 7462994 | LED illumination apparatus An LED illumination apparatus comprising a radiative substrate, at least one LED provided on the radiative substrate and a constant current circuit connected to the LED is provided. ... | 12/09/2008 |
| 7399498 | Material composition for producing optical waveguide and method for producing optical waveguide A transparent vessel is filled with a mixture solution containing a first photo-curable resin of a low refractive index and a second photo-curable resin of a high refractive index different in curing mechanism. When light at a wavelength capable of curing the first ... | 07/15/2008 |
| 7382033 | Luminescent body and optical device including the same A luminous body of prolonged fluorescence lifetime characterized by comprising not only an activator but also at least one coactivator selected from the group consisting of La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Sn, Sb and analogues thereof as a fur... | 06/03/2008 |
| 7342364 | Light source A light source comprising a light emitting diode comprising a GaN-based compound and having a single quantum well structure, and a driving voltage source for applying a pulse voltage to the light emitting diode, wherein a voltage at a low level of the pulse voltage ... | 03/11/2008 |
| 7332862 | Led lamp including a resist bonded to a copper film In an LED lamp, a copper film is first formed on a substrate by plating. A resist is then bonded onto the copper film so that shaped like a ring viewed from the whole of the LED lamp. A nickel and a gold film are formed on a portion of the copper film where the resi... | 02/19/2008 |
| 7332746 | Light-emitting apparatus A novel configuration of a light-emitting apparatus that can emit white light, in which a primary light source composed of a group III nitride compound semiconductor is used in combination with a secondary light source including a fluorescent material which emits li... | 02/19/2008 |
| 7329904 | LED lamp device An LED lamp device includes a light emitting element that emits light in a blue-based or violet-based color, an LED having a fluorescent material that emits fluorescent light in a yellow to yellow-green-based color in response to light received from the light emitti... | 02/12/2008 |
| 7312472 | Compound semiconductor element based on Group III element nitride In the present invention, (Ti1−xAx)N [in which A is at least one kind of metal selected from the group consisting of Al, Ga, and In] is used as a metal nitride layer, so that a Group III nitride compound semiconductor layer is formed on the m... | 12/25/2007 |
| 7304325 | Group III nitride compound semiconductor light-emitting device A semiconductor laminate containing a light-emitting layer is etched to reveal a side surface. A reflection surface opposite to the side surface of the semiconductor laminate is provided in one and the same chip as the semiconductor laminate. A groove may be formed ... | 12/04/2007 |
| 7249869 | Light emitting device A light emitting device includes a mark body, a substrate arranged in back of the mark body, an LED mounted on an opposite surface of the substrate to the mark body, and a light guide arranged on a closer side of the substrate to the LED and having an upper surface ... | 07/31/2007 |
| 7247884 | Group III nitride compound semiconductor light-emitting element A photo-excited semiconductor layer smaller in band gap energy than a light-emitting layer made of a Group III nitride compound semiconductor is provided between a substrate and the light-emitting layer. The photo-excited semiconductor layer is excited by the light ... | 07/24/2007 |
| 7227190 | White light emitting device A purple LED is fixed onto lead frames in the cup of a frame using a mount, and the purple LED is sealed by filling a sealant of transparent resin into the cup. Red/green/blue phosphors that absorb a light emitted by the purple LED and emit lights having red, green,... | 06/05/2007 |
| 7217023 | Linear luminous body and linear luminous structure The invention is directed to a linear luminous body comprising: a light source; a light source accommodating portion in which the light source is accommodated; and a light guide held by the light source accommodating portion so as to extend from the light source acc... | 05/15/2007 |
